JPS5475097A - Providing lower resistance of conductive material - Google Patents

Providing lower resistance of conductive material

Info

Publication number
JPS5475097A
JPS5475097A JP14200477A JP14200477A JPS5475097A JP S5475097 A JPS5475097 A JP S5475097A JP 14200477 A JP14200477 A JP 14200477A JP 14200477 A JP14200477 A JP 14200477A JP S5475097 A JPS5475097 A JP S5475097A
Authority
JP
Japan
Prior art keywords
metal oxide
powder
type metal
resistance
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14200477A
Other languages
Japanese (ja)
Inventor
Nobuo Sonoda
Wataru Shimoma
Yoshio Kishimoto
Yoichi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14200477A priority Critical patent/JPS5475097A/en
Publication of JPS5475097A publication Critical patent/JPS5475097A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: To obtain a simple method of providing a lower resistance with an electric oven and vacuum heating oven not required, by means of chemically treating n-type metal oxide semiconductor powder with a reducer.
CONSTITUTION: An oxygen excessive high resistance layer is being constructed on surface of n-type metal oxide semicoductor powder. By means of chemically reducing a very thin layer of particle surfaces, the high resistance layer will be changed into a low resistance, with a specific resistance of the powder made approximating to that of the crystal interior. The n-type metal oxide powder like SnO2, In2O3, ZnO, commercially procurable or low resistance already provided by the valence control method, is added to each water solution, with 10 mol% of reducer (rongalite CH2OHSO2Na.2H2O, sodium sulfite, thiosulfuric sodium, sodium nitrite) included, being well stirred for three hours at temperature above 80°C. And then, with a filtration, separation and cleaning processed, a n-type metal oxide powder of low resistance will be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP14200477A 1977-11-26 1977-11-26 Providing lower resistance of conductive material Pending JPS5475097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14200477A JPS5475097A (en) 1977-11-26 1977-11-26 Providing lower resistance of conductive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14200477A JPS5475097A (en) 1977-11-26 1977-11-26 Providing lower resistance of conductive material

Publications (1)

Publication Number Publication Date
JPS5475097A true JPS5475097A (en) 1979-06-15

Family

ID=15305135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14200477A Pending JPS5475097A (en) 1977-11-26 1977-11-26 Providing lower resistance of conductive material

Country Status (1)

Country Link
JP (1) JPS5475097A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015519745A (en) * 2012-05-09 2015-07-09 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ Method for increasing the electrical conductivity of a metal oxide semiconductor layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015519745A (en) * 2012-05-09 2015-07-09 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ Method for increasing the electrical conductivity of a metal oxide semiconductor layer

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