JP6498745B2 - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法 Download PDFInfo
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- JP6498745B2 JP6498745B2 JP2017251679A JP2017251679A JP6498745B2 JP 6498745 B2 JP6498745 B2 JP 6498745B2 JP 2017251679 A JP2017251679 A JP 2017251679A JP 2017251679 A JP2017251679 A JP 2017251679A JP 6498745 B2 JP6498745 B2 JP 6498745B2
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- 239000010409 thin film Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 57
- 229910044991 metal oxide Inorganic materials 0.000 claims description 55
- 150000004706 metal oxides Chemical class 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 38
- 238000000059 patterning Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 1
- -1 polyethylene naphthalate Polymers 0.000 claims 1
- 239000011112 polyethylene naphthalate Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 11
- 239000008186 active pharmaceutical agent Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 8
- 229910052720 vanadium Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910015202 MoCr Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Thin Film Transistor (AREA)
Description
テストデバイスは、高ドープSi(共通ゲート)基板の上に熱成長したSiO2(120nm)ゲート誘電体の上で実現された。15nm膜厚のa−IGZO(In:Ga:Zn=1:1:1)膜の活性層が、アルゴン(Ar)中に6%O2を含むdcスパッタにより堆積された。膜厚およびO2/Ar比は、低いプロセス温度で所望のTFT性能を達成するために最適化される。更に、100nm膜厚のMoソースおよびドレイン(S/D)コンタクトは、PVDと、SF6/O2ドライエッチケミストリによるパターニングとで形成された。S/D形成の後に、シュウ酸溶液を用いたウエットエッチ手続により活性層がパターニングされた。活性層の上に、100nmSiO2パッシベーション層が反応性パルスDCPVDで堆積された。
Claims (11)
- ボトムゲート・トップコンタクト金属酸化物半導体薄膜トランジスタの製造方法であって、
基板上にゲート電極を形成する工程と、
ゲート電極を覆うゲート誘電体層を形成する工程と、
ゲート誘電体層の上に金属酸化物半導体層を堆積する工程と、
金属酸化物半導体層の上に金属層または金属層スタックを直接堆積する工程と、
金属層または金属層スタックをパターニングして、ソースコンタクトとドレインコンタクトを形成する工程と、を含み、
金属層または金属層スタックをパターニングする工程は、プラズマを用いて金属層または金属層スタックをドライエッチングする工程であって、このプラズマは基板全体の上に均一に分布し、部分的なプラズマ不均一と金属酸化物半導体層への部分的なプラズマ帯電効果を低減する工程と、
その後に、金属酸化物半導体層をパターニングする工程と、を含む方法。 - 更に、パッシベーション層を堆積する工程と、アニール処理を行う工程とを含む請求項1に記載の方法。
- 金属酸化物半導体層は、アモルファスIGZO(インジウム・ガリウム・亜鉛・酸化物)層を含み、またはこれからなる請求項1または2に記載の方法。
- 金属酸化物半導体層は、InZnO、HfInZnO、SiInZnO、ZnO、CuOまたはSnO層のいずれかを含み、またはいずれかからなる請求項1または2に記載の方法。
- 金属酸化物半導体層は、10〜80nmの膜厚を有する請求項1〜4のいずれかに記載の方法。
- 金属層は、Moを含み、またはこれからなり、
金属層スタックは、Mo/Al/Moスタック、Mo/Auスタック、Mo/Tiスタック、Mo/Ti/Al/Moスタック、またはMo/ITOスタックを含み、またはこれらからなる請求項1〜5のいずれかに記載の方法。 - 金属層または金属層スタックは、50nm〜300nmの膜厚を有する請求項1〜6のいずれかに記載の方法。
- 金属酸化物半導体層をパターニングする工程は、ソースコンタクトおよびドレインコンタクトを形成するために、金属酸化物半導体層の上の金属層または金属層スタックをパターニングした後に行われる請求項1〜7のいずれかに記載の方法。
- 基板は、ポリエチレン・ナフタレート・ホイルを含む請求項1〜8のいずれかに記載の方法。
- 更に、ゲートに接続するために、ゲート誘電体層中にバイアを形成する工程を含む請求項1〜9のいずれかに記載の方法。
- 2〜5マイクロメータのオーダーのチャネル長を有するトランジスタの作製のための、請求項1〜10のいずれかに記載の方法の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261667646P | 2012-07-03 | 2012-07-03 | |
US61/667,646 | 2012-07-03 |
Related Parent Applications (1)
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JP2015518982A Division JP2015521804A (ja) | 2012-07-03 | 2013-06-19 | 薄膜トランジスタの製造方法 |
Publications (2)
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JP2018074178A JP2018074178A (ja) | 2018-05-10 |
JP6498745B2 true JP6498745B2 (ja) | 2019-04-10 |
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JP2015518982A Pending JP2015521804A (ja) | 2012-07-03 | 2013-06-19 | 薄膜トランジスタの製造方法 |
JP2017251679A Expired - Fee Related JP6498745B2 (ja) | 2012-07-03 | 2017-12-27 | 薄膜トランジスタの製造方法 |
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JP2015518982A Pending JP2015521804A (ja) | 2012-07-03 | 2013-06-19 | 薄膜トランジスタの製造方法 |
Country Status (5)
Country | Link |
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JP (2) | JP2015521804A (ja) |
KR (1) | KR102099860B1 (ja) |
CN (1) | CN104685633B (ja) |
TW (1) | TWI664734B (ja) |
WO (1) | WO2014005841A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101627815B1 (ko) * | 2015-04-21 | 2016-06-08 | 인천대학교 산학협력단 | 비결정질 이그조(igzo) tft 기반 트랜젼트 반도체의 제조 방법 |
CN106252359B (zh) * | 2016-08-26 | 2019-06-11 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示面板 |
EP3367425A1 (en) * | 2017-02-28 | 2018-08-29 | IMEC vzw | A method for direct bonding of semiconductor substrates |
CN108206139B (zh) * | 2018-01-02 | 2021-09-10 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管及其制作方法、阵列基板 |
EP3618103A1 (en) * | 2018-08-30 | 2020-03-04 | IMEC vzw | A patterning method |
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JP4410951B2 (ja) * | 2001-02-27 | 2010-02-10 | Nec液晶テクノロジー株式会社 | パターン形成方法および液晶表示装置の製造方法 |
KR100683155B1 (ko) * | 2004-09-03 | 2007-02-15 | 비오이 하이디스 테크놀로지 주식회사 | 박막트랜지스터 액정표시장치의 어레이 기판 제조방법 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP2008262979A (ja) * | 2007-04-10 | 2008-10-30 | Sharp Corp | 薄膜トランジスタ素子およびその製造方法 |
JP5258467B2 (ja) * | 2008-09-11 | 2013-08-07 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
EP2180518B1 (en) * | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
KR101667909B1 (ko) * | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
JP2012033516A (ja) * | 2008-11-26 | 2012-02-16 | Ulvac Japan Ltd | トランジスタ及びその製造方法。 |
JP5528734B2 (ja) * | 2009-07-09 | 2014-06-25 | 富士フイルム株式会社 | 電子素子及びその製造方法、表示装置、並びにセンサー |
WO2011027676A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101876470B1 (ko) * | 2009-11-06 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP5437776B2 (ja) * | 2009-11-18 | 2014-03-12 | 三井金属鉱業株式会社 | 酸化物半導体を用いた薄膜トランジスタおよびその製造方法 |
KR101356304B1 (ko) * | 2010-07-09 | 2014-01-28 | 샤프 가부시키가이샤 | 박막 트랜지스터 기판의 제조방법 |
US8513720B2 (en) * | 2010-07-14 | 2013-08-20 | Sharp Laboratories Of America, Inc. | Metal oxide semiconductor thin film transistors |
US8546161B2 (en) * | 2010-09-13 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and liquid crystal display device |
US8558960B2 (en) * | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US9911857B2 (en) * | 2010-10-29 | 2018-03-06 | Cbrite Inc. | Thin film transistor with low trap-density material abutting a metal oxide active layer and the gate dielectric |
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2013
- 2013-06-19 CN CN201380035135.5A patent/CN104685633B/zh not_active Expired - Fee Related
- 2013-06-19 JP JP2015518982A patent/JP2015521804A/ja active Pending
- 2013-06-19 KR KR1020157001910A patent/KR102099860B1/ko active IP Right Grant
- 2013-06-19 WO PCT/EP2013/062767 patent/WO2014005841A1/en active Application Filing
- 2013-06-21 TW TW102122061A patent/TWI664734B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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KR20150028997A (ko) | 2015-03-17 |
TW201405835A (zh) | 2014-02-01 |
TWI664734B (zh) | 2019-07-01 |
CN104685633A (zh) | 2015-06-03 |
JP2018074178A (ja) | 2018-05-10 |
KR102099860B1 (ko) | 2020-04-13 |
JP2015521804A (ja) | 2015-07-30 |
CN104685633B (zh) | 2018-08-03 |
WO2014005841A1 (en) | 2014-01-09 |
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