CN110010710B - 一种用于光检测应用的a-IGZO薄膜传感器及其制作方法 - Google Patents
一种用于光检测应用的a-IGZO薄膜传感器及其制作方法 Download PDFInfo
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Abstract
本发明涉及一种用于光检测应用的a‑IGZO薄膜传感器及其制作方法,该用于光检测应用的a‑IGZO薄膜传感器包括:衬底、设置在衬底上表面的底栅、设置在底栅表面的栅氧化层、设置在栅氧化层上表面相对两侧的源极和漏极、设置在栅氧化层上表面的a‑IGZO半导体层、设置在a‑IGZO半导体层上表面的保护层,所述保护层位于源极和漏极中间,保护层顶部形成与源极和漏极相接且正对的凹陷。上述用于光检测应用的a‑IGZO薄膜传感器,在激光激励下,其电学性能与不加光激励时电学性能差别很大,具有更低的导通阈值电压Vth,更大的输出工作电流,能有效用于探测光以及根据性能变化的大小来判断不同波段的光,且其能有效解决现有源极和漏极材料极易氧化且易使晶体管性能不稳定的问题。
Description
技术领域
本发明涉及薄膜传感器技术领域,具体涉及一种用于光检测应用的a-IGZO薄膜传感器及其制作方法。
背景技术
薄膜晶体管是在绝缘衬底材料上采用各种沉积方法沉积若干层薄膜,并通过刻蚀、光刻、掩模等技术制作而成,薄膜晶体管的结构和传统的MOS管结构类似,具有源极、漏极、栅极和沟道层。氧化物半导体被广泛认为是薄膜场效应晶体管最有希望的材料,成为当下显示技术的研究热点,同时它也被认为是柔性显示技术、柔性可穿戴电子技术以及新型传感技术发展中的一种重要材料。非晶铟镓锌氧化物(a-IGZO)具有较大的迁移率、优良的均匀性,制备过程中的低温处理以及成本低的优点,因此在电子和光电子器件中得到了广泛的应用。目前,国内外对a-IGZO这一新材料的研究与应用主要在显示领域,着重研究其在可见光波段下的稳定性情况,而对其在传感技术应用领域的研究甚少。另外,传统的a-IGZO薄膜晶体管大多采用铜作为源极和漏极材料,铜导电性能好,但也极易氧化,且其易与a-IGZO薄膜层渗透,使晶体管性能不稳定,且会随着时间性能变差。
发明内容
本发明的目的是提供一种用于光检测应用的a-IGZO薄膜传感器及其制作方法,能有效解决背景技术中存在的铜作为源极和漏极材料极易氧化且易使晶体管性能不稳定的问题。
为解决上述技术问题,本发明采用了以下技术方案:
一种用于光检测应用的a-IGZO薄膜传感器,包括:
衬底,为柔性绝缘衬底或刚性绝缘衬底;
设置在衬底上表面的底栅;
设置在底栅表面的栅氧化层,为硅片上生成的二氧化硅绝缘层;
设置在栅氧化层上表面相对两侧的源极和漏极,为掩模板利用电子束蒸发钛合金生成;
设置在栅氧化层上表面的a-IGZO半导体层,所述a-IGZO半导体层同时连接源极和漏极;
设置在a-IGZO半导体层上表面的保护层,所述保护层位于源极和漏极中间,保护层顶部形成与源极和漏极相接且正对的凹陷。
进一步地方案为,所述底栅为多晶硅薄层。
进一步地方案为,所述源极和漏极均分别为20nm的钛层上覆80nm的金层。
进一步地方案为,所述a-IGZO半导体层的尺寸为300um×100um。
并且提供上述用于光检测应用的a-IGZO薄膜传感器的制作方法,包括以下步骤:
步骤S1:对重掺杂的P型衬底硅片清洗和甩干;
步骤S2:将甩干后的P型衬底硅片于900℃高温及高纯O2气氛下进行热氧化,在P型衬底硅片表面生长一层二氧化硅绝缘层,即得到衬底材料;
步骤S3:将步骤S2得到的衬底材料放入溅射腔内,在真空环境、射频功率为100W的条件下,充入Ar和O2的混合气体,按照设定的工艺参数完成磁控溅射过程,在衬底材料的表面生成一层尺寸为300um×100um的a-IGZO半导体层;
步骤S4:通过掩模板利用电子束蒸发钛合金,在a-IGZO半导体层上形成20nm的钛层上覆80nm的金层,即形成源极和漏极;
步骤S5:在源极和漏极中间位置的a-IGZO半导体层上生成一层保护层,即得到a-IGZO薄膜传感器。
其中真空环境的真空度为1.3×10-3Pa。
上述技术方案中提供的用于光检测应用的a-IGZO薄膜传感器,采用底栅式结构,能更好地保证IGZO薄膜不受衬底光照的影响,在a-IGZO半导体层上涂覆光刻保护层,能有效避免器件检测使用时的沟道损伤,同时保护层的凹陷设计使得源极和漏极突出表面,更便于检测时的使用,且能实现a-IGZO半导体层与源极和漏极之间接触区域良好的欧姆接触,提高了沟道尺寸精度;并由钛、金材料通过特定的方法取代传统的铜材料作为源极和漏极材料,有效提高a-IGZO有源层的导电性,提高传感器光检测的敏感性;另外在激光激励下,该a-IGZO薄膜传感器的电学性能与不加光激励时电学性能差别很大,具有更低的导通阈值电压Vth,更大的输出工作电流,因而用于探测光,并可根据性能变化的大小来判断不同波段的光。
并且提供了用于光检测应用的a-IGZO薄膜传感器的制作方法,采用热氧化工艺在硅片表面生成SiO2薄膜,操作简便,氧化层致密,足以作为扩散掩蔽层保证器件表面不受周围气氛影响;采用磁控溅射法在衬底材料的表面生成a-IGZO半导体层,该方法沉积速度快、基材温升低,对膜层的损伤小,且溅射所获得的薄膜纯度高、致密性好、成膜均匀性好,薄膜与基片结合较好,其能精确控制镀层的厚度,同时可通过改变参数条件控制薄膜的颗粒大小;通过掩膜板利用电子束蒸发钛合金在a-IGZO半导体层上形成20nm的钛层上覆80nm的金层,有效解决了现有的铜电极容易氧化、铜电极沉积在金属氧化物有源层上之后铜原子向氧化物扩散的缺陷。
附图说明
图1为本发明所述用于光检测应用的a-IGZO薄膜传感器的结构示意图;
图2为本发明用于光检测应用的a-IGZO薄膜传感器在无光照条件下的转移特性曲线;
图3为本发明用于光检测应用的a-IGZO薄膜传感器在无450nm激光激励下的转移特性曲线。
图中:1.衬底;2.底栅;3.栅氧化层;4.源极;5.漏极;6.a-IGZO半导体层;7.保护层。
具体实施方式
为了使本发明的目的及优点更加清楚明白,以下结合实施例对本发明进行具体说明。应当理解,以下文字仅仅用以描述本发明的一种或几种具体的实施方式,并不对本发明具体请求的保护范围进行严格限定。
本发明采取的技术方案如图1所示,一种用于光检测应用的a-IGZO薄膜传感器,包括:
衬底1,为柔性绝缘衬底或刚性绝缘衬底;
设置在衬底1上表面的底栅2,本实施例中底栅2为多晶硅薄层,底栅式结构具有有效迁移率高,源-漏极电流Isd大,阈值电压稳定性好,且作为显示控制器件使用时,底栅式结构还能更好地保证a-IGZO薄膜不受衬底光照的影响,在显示应用方面具有更好的稳定性;
设置在底栅2表面的栅氧化层3,为硅片上生成的二氧化硅绝缘层;
设置在栅氧化层3上表面相对两侧的源极4和漏极5,为掩模板利用电子束蒸发钛合金生成,为20nm的钛层上覆80nm的金层,其能有效克服现有技术中的铜电极容易氧化、铜电极沉积在金属氧化物有源层上之后铜原子向氧化物扩散的缺陷,使其具有高电导率的特点;
设置在栅氧化层3上表面的a-IGZO半导体层6,所述a-IGZO半导体层6同时连接源极4和漏极5,本实施例中a-IGZO半导体层的尺寸为300um×100um;
设置在a-IGZO半导体层6上表面的保护层7,所述保护层7位于源极4和漏极5中间,保护层7顶部形成与源极4和漏极5相接且正对的凹陷,在a-IGZO半导体层上覆盖保护层,能有效避免器件检测使用时的沟道损伤,同时保护层的凹陷设计使得源极和漏极突出表面,更加便于检测时使用,同时也能实现了a-IGZO半导体层与源极和漏极之间接触区域良好的欧姆接触,提高了沟道尺寸精度。
并且提供上述用于光检测应用的a-IGZO薄膜传感器的制作方法,包括以下步骤:
对重掺杂的P型衬底硅片清洗和甩干,以去除硅片表面的灰尘、有机物、金属离子等;
将甩干后的P型衬底硅片放入氧化扩散炉中,在900℃高温及高纯O2气氛下进行热氧化,在P型衬底硅片表面生长一层二氧化硅绝缘层,即得到衬底材料;
将衬底材料放入溅射腔内,使用机械泵和分子泵抽取真空环境(真空度为1.3×10-3Pa),加热至100℃(真空度为5×10-3Pa时调节温度),射频功率为100W,充入45sccm的Ar和5sccm的O2混合气体(气压0.5Pa),托盘转速为3r/s,在衬底材料的表面生成一层尺寸为300um×100um的a-IGZO半导体层;这里考虑到TFT电荷存储层的致密度要求不高,存在缺陷时更容易俘获电子,因此作为电荷存储层的a-IGZO薄膜是采用磁控溅射法制备的(本实施例中采用的溅射设备为Denton公司制造的Vacuum Discovery Deposition System(DVDDS)磁控反应溅射系统)。磁控溅射法是以一定能量的粒子(离子或中性原子、分子)轰击靶材表面,使靶材表面的原子或分子获得足够大的能量而最终逸出靶材表面的工艺,可以用来淀积薄膜。该方法沉积速度快、基材温升低,对膜层的损伤小,且溅射所获得的薄膜纯度高、致密性好、成膜均匀性好,薄膜与基片结合较好,其能精确控制镀层的厚度,同时可通过改变参数条件控制薄膜的颗粒大小;
通过掩模板利用电子束蒸发钛合金,在a-IGZO半导体层上形成20nm的钛层上覆80nm的金层,即形成源极和漏极;
最后在源极和漏极中间位置的a-IGZO半导体层上生成一层保护层,即得到a-IGZO薄膜传感器。
试验测试
通过探针台和Keithley4200半导体参数分析仪对制备的a-IGZO薄膜传感器进行性能研究。为了便于测试,将制备完成的a-IGZO薄膜传感器用导电银浆粘附在不锈钢刀片上,并利用烘胶台烘干,从而引出栅极,测试时可直接将探针扎在不锈钢上。
制备的a-IGZO薄膜传感器在无光照及在405nm激光激励下的转移特性曲线分别如图2和图3所示。实验数据指出,在无光照下,当栅极电压Vgs小于4.6V时,漏极电流Ids数值很小,说明器件处于关闭状态,当栅极电压Vgs超过4.6V后,漏极电流Ids急剧增大,由此可知,该器件的阈值电压Vth为4.6V;但当450nm的激光激励时,该器件的阈值电压Vth大大下降,变为0.5V。另一方面,随着栅极电压Vgs的增大,漏极电流Ids呈指数上升,说明该器件在有无光照下都亚阈值摆幅较小,器件性能良好。
另外该a-IGZO薄膜传感器在450nm和660nm激光激励(未提供附图)下的阈值电压Vth都低于无光照时的阈值电压Vth(4.6V),且同在激光激励下,随着激光波长的增大,a-IGZO薄膜传感器的阈值电压呈增大趋势。
将制备的a-IGZO薄膜传感器的源极S接地,栅极电压Vgs分别设为3V、4V、5V、6V,在不同的栅压下漏端电压从0V逐渐增大到6V,探测在不同栅极电压下该a-IGZO薄膜传感器的传输特性,分别在无光照情况和在不同激光激励下检测其传输特性。
结果表明,在无光照情况下,在低于4.6V的栅压控制下,漏极电流Ids几乎为0;当栅极电压Vgs高于阈值电压Vth时,器件沟道导通,漏极电流Ids不再为0,且随着栅极电压Vgs的增大,漏极电流Ids显著增大;当Vgs>Vth时,在不同的栅压下,漏极电流Ids都表现为随着栅极电压Vgs的增大先显著增大,随后趋于饱和不变。这表明对于漏极电流Ids器件,栅极电压Vgs对器件的漏极电流Ids均有很好的调控作用,并且器件具有很好的夹断特性,在饱和区漏电流无明显的升降,这显示出该薄膜传感器本身具备良好的电学特性。而在激光激励下,a-IGZO薄膜传感器导通时所需的阈值电压Vth更小,且在同样的栅极电压Vgs下,激光激励下的漏极电流Ids比无光照下的大,且随激光波长的增大而有所下降。
利用本发明a-IGZO薄膜传感器在有无光照和在不同波段激光激励下,其转移特性曲线和传输特性曲线上的特性和规律,该器件可用于探测光,且可以根据性能变化的大小来判断不同波段的光。
上面结合附图对本发明的实施方式作了详细说明,但是本发明并不限于上述实施方式,对于本技术领域的普通技术人员来说,在获知本发明中记载内容后,在不脱离本发明原理的前提下,还可以对其作出若干同等变换和替代,这些同等变换和替代也应视为属于本发明的保护范围。
Claims (6)
1.一种用于光检测应用的a-IGZO薄膜传感器,其特征在于,包括:
衬底,为柔性绝缘衬底或刚性绝缘衬底;
设置在衬底上表面的底栅;
设置在底栅表面的栅氧化层,为硅片上生成的二氧化硅绝缘层;
设置在栅氧化层上表面相对两侧的源极和漏极,由掩模板利用电子束蒸发钛合金生成,所述源极和漏极均分别为20nm的钛层上覆80nm的金层;
设置在栅氧化层上表面的a-IGZO半导体层,所述a-IGZO半导体层同时连接源极和漏极;
设置在a-IGZO半导体层上表面的保护层,所述保护层位于源极和漏极中间,保护层顶部形成与源极和漏极相接且正对的凹陷。
2.根据权利要求1所述的用于光检测应用的a-IGZO薄膜传感器,其特征在于:所述底栅为多晶硅薄层。
3.根据权利要求1所述的用于光检测应用的a-IGZO薄膜传感器,其特征在于:所述a-IGZO半导体层的尺寸为300um×100um。
4.一种如权利要求1~3任一项所述的用于光检测应用的a-IGZO薄膜传感器的制作方法,其特征在于,所述衬底为刚性绝缘衬底,a-IGZO薄膜传感器的制作方法包括以下步骤:
步骤S1:对重掺杂的P型衬底硅片清洗和甩干;
步骤S2:将甩干后的P型衬底硅片于900℃高温及高纯O2气氛下进行热氧化,在P型衬底硅片表面生长一层二氧化硅绝缘层,即得到衬底材料;
步骤S3:将步骤S2得到的衬底材料放入溅射腔内,在真空环境、射频功率为100W的条件下,充入Ar和O2的混合气体,按照设定的工艺参数完成磁控溅射过程,在衬底材料的表面生成一层尺寸为300um×100um的a-IGZO半导体层;
步骤S4:通过掩模板利用电子束蒸发钛合金,在a-IGZO半导体层上形成20nm的钛层上覆80nm的金层,即形成源极和漏极;
步骤S5:在源极和漏极中间位置的a-IGZO半导体层上生成一层保护层,即得到a-IGZO薄膜传感器。
5.根据权利要求4所述的用于光检测应用的a-IGZO薄膜传感器,其特征在于:真空环境的真空度为1.3×10-3Pa。
6.根据权利要求4所述的用于光检测应用的a-IGZO薄膜传感器,其特征在于:所述混合气体为45sccm的Ar和5sccm的O2。
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