JP2010205782A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2010205782A
JP2010205782A JP2009046801A JP2009046801A JP2010205782A JP 2010205782 A JP2010205782 A JP 2010205782A JP 2009046801 A JP2009046801 A JP 2009046801A JP 2009046801 A JP2009046801 A JP 2009046801A JP 2010205782 A JP2010205782 A JP 2010205782A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing
water
silicide layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009046801A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010205782A5 (https=
Inventor
Tomoshi Nakayama
知士 中山
Yoshiko Kasama
佳子 笠間
Eiichi Fujikura
栄一 藤倉
Atsushi Kikuchi
敦志 菊池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009046801A priority Critical patent/JP2010205782A/ja
Priority to US12/656,981 priority patent/US8293653B2/en
Priority to CN201010119463.1A priority patent/CN101819931B/zh
Publication of JP2010205782A publication Critical patent/JP2010205782A/ja
Publication of JP2010205782A5 publication Critical patent/JP2010205782A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009046801A 2009-02-27 2009-02-27 半導体装置の製造方法 Pending JP2010205782A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009046801A JP2010205782A (ja) 2009-02-27 2009-02-27 半導体装置の製造方法
US12/656,981 US8293653B2 (en) 2009-02-27 2010-02-22 Method of manufacturing a semiconductor device
CN201010119463.1A CN101819931B (zh) 2009-02-27 2010-02-23 制造半导体装置的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009046801A JP2010205782A (ja) 2009-02-27 2009-02-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010205782A true JP2010205782A (ja) 2010-09-16
JP2010205782A5 JP2010205782A5 (https=) 2012-03-29

Family

ID=42654964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009046801A Pending JP2010205782A (ja) 2009-02-27 2009-02-27 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8293653B2 (https=)
JP (1) JP2010205782A (https=)
CN (1) CN101819931B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016537817A (ja) * 2013-11-20 2016-12-01 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ シリサイド層を保護するための保護方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5326113B2 (ja) * 2009-06-25 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置の洗浄方法
US8784572B2 (en) 2011-10-19 2014-07-22 Intermolecular, Inc. Method for cleaning platinum residues on a semiconductor substrate
US8697573B2 (en) 2011-11-09 2014-04-15 Intermolecular, Inc. Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating
US9865466B2 (en) * 2015-09-25 2018-01-09 Applied Materials, Inc. Silicide phase control by confinement
CN114005831B (zh) * 2021-10-28 2024-03-22 上海华力微电子有限公司 一种改善NAND flash字线间漏电的工艺集成方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330023A (ja) * 1998-05-20 1999-11-30 Nec Corp ウエハの洗浄方法
JP2002146574A (ja) * 2000-09-06 2002-05-22 Samsung Electronics Co Ltd 酸化性物質を含むアノード水及び／又は還元性物質を含むカソード水を用いる半導体素子製造の際の湿式方法及びこの方法に使われるアノード水及び／又はカソード水
JP2002305177A (ja) * 2001-02-01 2002-10-18 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002373879A (ja) * 2001-06-13 2002-12-26 Nec Corp 洗浄水及びウエハの洗浄方法
JP2003142441A (ja) * 2001-11-02 2003-05-16 Nec Electronics Corp 洗浄方法および洗浄液
JP2003338464A (ja) * 2002-03-12 2003-11-28 Toshiba Corp 半導体装置の製造方法
JP2005085981A (ja) * 2003-09-09 2005-03-31 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法及び洗浄方法
JP2005183937A (ja) * 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
JP2006024823A (ja) * 2004-07-09 2006-01-26 Casio Comput Co Ltd レジスト除去方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69533245D1 (de) 1994-03-25 2004-08-19 Nec Electronics Corp Vorrichtung zur elektrolytischen Behandlung
JP3594718B2 (ja) 1995-12-08 2004-12-02 大日本印刷株式会社 包装用材料およびそれを使用した押し出しラミネ−トチュ−ブ
CN1299333C (zh) 1996-08-20 2007-02-07 奥加诺株式会社 清洗电子元件或其制造设备的元件的方法和装置
CN1269190C (zh) 2002-11-19 2006-08-09 台湾积体电路制造股份有限公司 制作接触孔于硅化镍层上方的方法
JP3828511B2 (ja) * 2003-06-26 2006-10-04 株式会社東芝 半導体装置の製造方法
JP4917328B2 (ja) 2006-02-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008198935A (ja) * 2007-02-15 2008-08-28 Sony Corp 絶縁ゲート電界効果トランジスタの製造方法。

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330023A (ja) * 1998-05-20 1999-11-30 Nec Corp ウエハの洗浄方法
JP2002146574A (ja) * 2000-09-06 2002-05-22 Samsung Electronics Co Ltd 酸化性物質を含むアノード水及び／又は還元性物質を含むカソード水を用いる半導体素子製造の際の湿式方法及びこの方法に使われるアノード水及び／又はカソード水
JP2002305177A (ja) * 2001-02-01 2002-10-18 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002373879A (ja) * 2001-06-13 2002-12-26 Nec Corp 洗浄水及びウエハの洗浄方法
JP2003142441A (ja) * 2001-11-02 2003-05-16 Nec Electronics Corp 洗浄方法および洗浄液
JP2003338464A (ja) * 2002-03-12 2003-11-28 Toshiba Corp 半導体装置の製造方法
JP2005085981A (ja) * 2003-09-09 2005-03-31 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法及び洗浄方法
JP2005183937A (ja) * 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
JP2006024823A (ja) * 2004-07-09 2006-01-26 Casio Comput Co Ltd レジスト除去方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016537817A (ja) * 2013-11-20 2016-12-01 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ シリサイド層を保護するための保護方法

Also Published As

Publication number Publication date
CN101819931B (zh) 2013-02-13
CN101819931A (zh) 2010-09-01
US20100221912A1 (en) 2010-09-02
US8293653B2 (en) 2012-10-23

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