JP2010182773A - 配線基板、電子装置及び電子装置実装構造 - Google Patents
配線基板、電子装置及び電子装置実装構造 Download PDFInfo
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Abstract
【解決手段】シリコン基板11と、その厚み方向に貫通して形成されたスルーホールTHと、シリコン基板11の両面、側面及びスルーホールTHの内面に形成された絶縁層14と、スルーホールTHに形成された貫通電極20と、シリコン基板11の一方の面に形成され、貫通電極20に接続された配線層22と、配線層22に接続されて、シリコン基板11の一方の面から側面Sに延在して形成された金属ワイヤ端子42とを含む。配線基板1に電子部品30が実装された電子装置2の基板方向が実装基板50の基板方向に直交するように、電子装置2の側面Sの金属ワイヤ端子42が実装基板50に接続される。
【選択図】図9
Description
Claims (10)
- シリコン基板と、
前記シリコン基板の厚み方向に貫通して形成されたスルーホールと、
前記シリコン基板の両面、側面及び前記スルーホールの内面に形成された絶縁層と、
前記スルーホールに形成された貫通電極と、
前記シリコン基板の少なくとも一方の面に形成され、前記貫通電極に接続された配線層と、
前記配線層に接続されて、前記シリコン基板の一方の面から側面に延在して形成された金属ワイヤ端子とを有することを特徴とする配線基板。 - 前記金属ワイヤ端子は、ワイヤボンディング法によって形成された金ワイヤからなることを特徴とする請求項1に記載の配線基板。
- 前記シリコン基板の前記配線層が形成された面と反対面側の中央部に凹部が設けられており、前記スルーホール及び貫通電極は前記凹部の底部に配置されていることを特徴とする請求項1に記載の配線基板。
- 前記金属ワイヤ端子が設けられた前記シリコン基板の側面には、厚み方向に溝が設けられており、前記金属ワイヤ端子は前記溝に配置されていることを特徴とする請求項1に記載の配線基板。
- 請求項1乃至4のいずれかの配線基板と、
前記シリコン基板の前記配線層が形成された面と反対面側に実装され、前記貫通電極に電気的に接続された電子部品とを有することを特徴とする電子装置。 - 請求項5の電子装置と、
前記電子装置が実装された実装基板であって、前記電子装置の基板方向が前記実装基板の基板方向に直交するように、前記電子装置の側面の前記金属ワイヤ端子が前記実装基板の接続電極に接続された前記実装基板とを有することを特徴とする電子装置実装構造。 - 前記実装基板は垂直方向に立って配置されており、前記電子部品はその基板方向が水平方向に配置されることを特徴とする請求項6に記載の電子装置実装構造。
- 前記電子部品はMEMS加速度センサであることを特徴とする請求項7に記載の電子装置実装構造。
- 前記電子装置の前記実装基板との接続領域の周りに補強樹脂が設けられていることを特徴とする請求項6乃至8のいずれか一項に記載の電子装置実装構造。
- 前記電子装置の前記金属ワイヤ端子は金ワイヤからなり、前記実装基板の接続電極はその最上層が金層、又は金/錫合金層からなり、
前記電子装置の前記金属ワイヤ端子と前記実装基板の接続電極とは、金と金との超音波接合、又は金−錫接合によって接続されていることを特徴とする請求項請求項6乃至8のいずれか一項に記載の電子装置実装構造。
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WO2012128270A1 (ja) * | 2011-03-24 | 2012-09-27 | 株式会社村田製作所 | 発光素子用台座基板およびledデバイス |
KR101337568B1 (ko) * | 2011-09-14 | 2013-12-06 | 한국전기연구원 | 마이크로 그리드 구조체 제조방법 |
WO2017212832A1 (ja) * | 2016-06-09 | 2017-12-14 | Nissha株式会社 | 電極パターン一体化成形品及びその製造方法 |
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KR20100071968A (ko) * | 2007-08-31 | 2010-06-29 | 리엑티브 나노테크놀로지스, 인크. | 전자 부품의 저온 접합을 위한 방법 |
KR101099586B1 (ko) * | 2010-11-12 | 2011-12-28 | 앰코 테크놀로지 코리아 주식회사 | 수직 실장형 반도체 패키지 |
DE102011005963B3 (de) * | 2011-03-23 | 2012-05-31 | Robert Bosch Gmbh | Mikromechanische Vorrichtung sowie Verfahren zu dessen Herstellung |
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