JP2010182404A5 - - Google Patents

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Publication number
JP2010182404A5
JP2010182404A5 JP2010021072A JP2010021072A JP2010182404A5 JP 2010182404 A5 JP2010182404 A5 JP 2010182404A5 JP 2010021072 A JP2010021072 A JP 2010021072A JP 2010021072 A JP2010021072 A JP 2010021072A JP 2010182404 A5 JP2010182404 A5 JP 2010182404A5
Authority
JP
Japan
Prior art keywords
access
memory device
access change
nonvolatile memory
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010021072A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010182404A (ja
Filing date
Publication date
Priority claimed from EP09305108A external-priority patent/EP2221825A1/en
Application filed filed Critical
Publication of JP2010182404A publication Critical patent/JP2010182404A/ja
Publication of JP2010182404A5 publication Critical patent/JP2010182404A5/ja
Pending legal-status Critical Current

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JP2010021072A 2009-02-05 2010-02-02 偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置 Pending JP2010182404A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09305108A EP2221825A1 (en) 2009-02-05 2009-02-05 Non-volatile storage device with forgery-proof permanent storage option

Publications (2)

Publication Number Publication Date
JP2010182404A JP2010182404A (ja) 2010-08-19
JP2010182404A5 true JP2010182404A5 (https=) 2013-01-24

Family

ID=40727251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010021072A Pending JP2010182404A (ja) 2009-02-05 2010-02-02 偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置

Country Status (5)

Country Link
US (1) US20100199028A1 (https=)
EP (2) EP2221825A1 (https=)
JP (1) JP2010182404A (https=)
KR (1) KR20100090214A (https=)
CN (1) CN101800080A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6556435B2 (ja) 2014-09-17 2019-08-07 東芝メモリ株式会社 半導体集積回路

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734313B2 (ja) * 1985-08-09 1995-04-12 株式会社日立製作所 Ｉｃメモリ装置
US4796235A (en) * 1987-07-22 1989-01-03 Motorola, Inc. Write protect mechanism for non-volatile memory
JPH01155595A (ja) * 1987-12-11 1989-06-19 Toshiba Corp 不揮発性半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
FR2771839B1 (fr) * 1997-11-28 2000-01-28 Sgs Thomson Microelectronics Memoire non volatile programmable et effacable electriquement
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
US5999477A (en) 1998-06-23 1999-12-07 Vanguard International Semiconductor Corporation Distributed array activation arrangement
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP2000268584A (ja) * 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP3734408B2 (ja) * 2000-07-03 2006-01-11 シャープ株式会社 半導体記憶装置
US6731536B1 (en) * 2001-03-05 2004-05-04 Advanced Micro Devices, Inc. Password and dynamic protection of flash memory data
DE10126281A1 (de) * 2001-05-29 2002-12-12 Infineon Technologies Ag Programmgesteuerte Einheit
JP3843777B2 (ja) * 2001-08-10 2006-11-08 ソニー株式会社 半導体記憶装置
DE10162308A1 (de) * 2001-12-19 2003-07-03 Philips Intellectual Property Verfahren und Anordnung zur Zugriffssteuerung auf EEPROMs sowie ein entsprechendes Computerprogrammprodukt und eine entsprechendes computerlesbares Speichermedium
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6948041B2 (en) * 2002-10-24 2005-09-20 Micron Technology, Inc. Permanent memory block protection in a flash memory device
US6944083B2 (en) * 2003-11-17 2005-09-13 Sony Corporation Method for detecting and preventing tampering with one-time programmable digital devices
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
US7046570B1 (en) * 2004-06-02 2006-05-16 Xilinx, Inc. Programmable logic devices optionally convertible to one time programmable devices
JP4706626B2 (ja) * 2006-11-30 2011-06-22 株式会社デンソー 電子制御装置
JP2013069379A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置

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