JP2010182404A - 偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置 - Google Patents

偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置 Download PDF

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Publication number
JP2010182404A
JP2010182404A JP2010021072A JP2010021072A JP2010182404A JP 2010182404 A JP2010182404 A JP 2010182404A JP 2010021072 A JP2010021072 A JP 2010021072A JP 2010021072 A JP2010021072 A JP 2010021072A JP 2010182404 A JP2010182404 A JP 2010182404A
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access
receiving
current
access change
storage unit
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JP2010021072A
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English (en)
Japanese (ja)
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JP2010182404A5 (https=
Inventor
Wolfgang Klausberger
クラウスベルガー ウォルフギャング
Meinolf Blawat
ブラワ マイノフ
Joern Jachalsky
ジャチャルスキー ジョーン
Herbert Schutze
シュッツェ ヘルベルト
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Thomson Licensing SAS
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Thomson Licensing SAS
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Publication of JP2010182404A publication Critical patent/JP2010182404A/ja
Publication of JP2010182404A5 publication Critical patent/JP2010182404A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
JP2010021072A 2009-02-05 2010-02-02 偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置 Pending JP2010182404A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09305108A EP2221825A1 (en) 2009-02-05 2009-02-05 Non-volatile storage device with forgery-proof permanent storage option

Publications (2)

Publication Number Publication Date
JP2010182404A true JP2010182404A (ja) 2010-08-19
JP2010182404A5 JP2010182404A5 (https=) 2013-01-24

Family

ID=40727251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010021072A Pending JP2010182404A (ja) 2009-02-05 2010-02-02 偽造に耐えられる固定記憶のオプションをもつ不揮発性記憶装置

Country Status (5)

Country Link
US (1) US20100199028A1 (https=)
EP (2) EP2221825A1 (https=)
JP (1) JP2010182404A (https=)
KR (1) KR20100090214A (https=)
CN (1) CN101800080A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620203B2 (en) 2014-09-17 2017-04-11 Kabushiki Kaisha Toshiba Nonvolatile memory integrated circuit with built-in redundancy

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236800A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd Ｉｃメモリ装置
JPH01155595A (ja) * 1987-12-11 1989-06-19 Toshiba Corp 不揮発性半導体記憶装置
JP2000268584A (ja) * 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP2003059283A (ja) * 2001-08-10 2003-02-28 Sony Corp 半導体記憶装置
JP2008140018A (ja) * 2006-11-30 2008-06-19 Denso Corp 電子制御装置
JP2013069379A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796235A (en) * 1987-07-22 1989-01-03 Motorola, Inc. Write protect mechanism for non-volatile memory
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
FR2771839B1 (fr) * 1997-11-28 2000-01-28 Sgs Thomson Microelectronics Memoire non volatile programmable et effacable electriquement
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
US5999477A (en) 1998-06-23 1999-12-07 Vanguard International Semiconductor Corporation Distributed array activation arrangement
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
JP3734408B2 (ja) * 2000-07-03 2006-01-11 シャープ株式会社 半導体記憶装置
US6731536B1 (en) * 2001-03-05 2004-05-04 Advanced Micro Devices, Inc. Password and dynamic protection of flash memory data
DE10126281A1 (de) * 2001-05-29 2002-12-12 Infineon Technologies Ag Programmgesteuerte Einheit
DE10162308A1 (de) * 2001-12-19 2003-07-03 Philips Intellectual Property Verfahren und Anordnung zur Zugriffssteuerung auf EEPROMs sowie ein entsprechendes Computerprogrammprodukt und eine entsprechendes computerlesbares Speichermedium
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6948041B2 (en) * 2002-10-24 2005-09-20 Micron Technology, Inc. Permanent memory block protection in a flash memory device
US6944083B2 (en) * 2003-11-17 2005-09-13 Sony Corporation Method for detecting and preventing tampering with one-time programmable digital devices
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
US7046570B1 (en) * 2004-06-02 2006-05-16 Xilinx, Inc. Programmable logic devices optionally convertible to one time programmable devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236800A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd Ｉｃメモリ装置
JPH01155595A (ja) * 1987-12-11 1989-06-19 Toshiba Corp 不揮発性半導体記憶装置
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP2000268584A (ja) * 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2003059283A (ja) * 2001-08-10 2003-02-28 Sony Corp 半導体記憶装置
JP2008140018A (ja) * 2006-11-30 2008-06-19 Denso Corp 電子制御装置
JP2013069379A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620203B2 (en) 2014-09-17 2017-04-11 Kabushiki Kaisha Toshiba Nonvolatile memory integrated circuit with built-in redundancy

Also Published As

Publication number Publication date
CN101800080A (zh) 2010-08-11
US20100199028A1 (en) 2010-08-05
EP2221825A1 (en) 2010-08-25
KR20100090214A (ko) 2010-08-13
EP2221824A1 (en) 2010-08-25

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