KR20100090214A - 위조-방지의 영구적인 저장 옵션을 갖는 불휘발성 저장 장치 - Google Patents

위조-방지의 영구적인 저장 옵션을 갖는 불휘발성 저장 장치 Download PDF

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Publication number
KR20100090214A
KR20100090214A KR1020100010555A KR20100010555A KR20100090214A KR 20100090214 A KR20100090214 A KR 20100090214A KR 1020100010555 A KR1020100010555 A KR 1020100010555A KR 20100010555 A KR20100010555 A KR 20100010555A KR 20100090214 A KR20100090214 A KR 20100090214A
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KR
South Korea
Prior art keywords
access
change
current
storage unit
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020100010555A
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English (en)
Korean (ko)
Inventor
클라우스버거 볼프강
블라왓트 마이놀프
잭찰스키 조에른
슈체 허버트
Original Assignee
톰슨 라이센싱
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Publication date
Application filed by 톰슨 라이센싱 filed Critical 톰슨 라이센싱
Publication of KR20100090214A publication Critical patent/KR20100090214A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
KR1020100010555A 2009-02-05 2010-02-04 위조-방지의 영구적인 저장 옵션을 갖는 불휘발성 저장 장치 Withdrawn KR20100090214A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09305108.4 2009-02-05
EP09305108A EP2221825A1 (en) 2009-02-05 2009-02-05 Non-volatile storage device with forgery-proof permanent storage option

Publications (1)

Publication Number Publication Date
KR20100090214A true KR20100090214A (ko) 2010-08-13

Family

ID=40727251

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100010555A Withdrawn KR20100090214A (ko) 2009-02-05 2010-02-04 위조-방지의 영구적인 저장 옵션을 갖는 불휘발성 저장 장치

Country Status (5)

Country Link
US (1) US20100199028A1 (https=)
EP (2) EP2221825A1 (https=)
JP (1) JP2010182404A (https=)
KR (1) KR20100090214A (https=)
CN (1) CN101800080A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6556435B2 (ja) 2014-09-17 2019-08-07 東芝メモリ株式会社 半導体集積回路

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734313B2 (ja) * 1985-08-09 1995-04-12 株式会社日立製作所 Ｉｃメモリ装置
US4796235A (en) * 1987-07-22 1989-01-03 Motorola, Inc. Write protect mechanism for non-volatile memory
JPH01155595A (ja) * 1987-12-11 1989-06-19 Toshiba Corp 不揮発性半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
FR2771839B1 (fr) * 1997-11-28 2000-01-28 Sgs Thomson Microelectronics Memoire non volatile programmable et effacable electriquement
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
US5999477A (en) 1998-06-23 1999-12-07 Vanguard International Semiconductor Corporation Distributed array activation arrangement
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP2000268584A (ja) * 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP3734408B2 (ja) * 2000-07-03 2006-01-11 シャープ株式会社 半導体記憶装置
US6731536B1 (en) * 2001-03-05 2004-05-04 Advanced Micro Devices, Inc. Password and dynamic protection of flash memory data
DE10126281A1 (de) * 2001-05-29 2002-12-12 Infineon Technologies Ag Programmgesteuerte Einheit
JP3843777B2 (ja) * 2001-08-10 2006-11-08 ソニー株式会社 半導体記憶装置
DE10162308A1 (de) * 2001-12-19 2003-07-03 Philips Intellectual Property Verfahren und Anordnung zur Zugriffssteuerung auf EEPROMs sowie ein entsprechendes Computerprogrammprodukt und eine entsprechendes computerlesbares Speichermedium
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6948041B2 (en) * 2002-10-24 2005-09-20 Micron Technology, Inc. Permanent memory block protection in a flash memory device
US6944083B2 (en) * 2003-11-17 2005-09-13 Sony Corporation Method for detecting and preventing tampering with one-time programmable digital devices
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
US7046570B1 (en) * 2004-06-02 2006-05-16 Xilinx, Inc. Programmable logic devices optionally convertible to one time programmable devices
JP4706626B2 (ja) * 2006-11-30 2011-06-22 株式会社デンソー 電子制御装置
JP2013069379A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CN101800080A (zh) 2010-08-11
US20100199028A1 (en) 2010-08-05
EP2221825A1 (en) 2010-08-25
EP2221824A1 (en) 2010-08-25
JP2010182404A (ja) 2010-08-19

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20100204

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid