CN101800080A - 具有防伪永久存储选项的非易失性存储装置 - Google Patents

具有防伪永久存储选项的非易失性存储装置 Download PDF

Info

Publication number
CN101800080A
CN101800080A CN201010114050A CN201010114050A CN101800080A CN 101800080 A CN101800080 A CN 101800080A CN 201010114050 A CN201010114050 A CN 201010114050A CN 201010114050 A CN201010114050 A CN 201010114050A CN 101800080 A CN101800080 A CN 101800080A
Authority
CN
China
Prior art keywords
access
change indication
receiving
access change
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201010114050A
Other languages
English (en)
Chinese (zh)
Inventor
沃尔夫冈·克劳斯伯格
迈诺尔夫·布拉瓦
约恩·亚卡斯基
赫伯特·许策
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Licensing SAS
Original Assignee
Thomson Licensing SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Licensing SAS filed Critical Thomson Licensing SAS
Publication of CN101800080A publication Critical patent/CN101800080A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
CN201010114050A 2009-02-05 2010-02-05 具有防伪永久存储选项的非易失性存储装置 Pending CN101800080A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09305108.4 2009-02-05
EP09305108A EP2221825A1 (en) 2009-02-05 2009-02-05 Non-volatile storage device with forgery-proof permanent storage option

Publications (1)

Publication Number Publication Date
CN101800080A true CN101800080A (zh) 2010-08-11

Family

ID=40727251

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010114050A Pending CN101800080A (zh) 2009-02-05 2010-02-05 具有防伪永久存储选项的非易失性存储装置

Country Status (5)

Country Link
US (1) US20100199028A1 (https=)
EP (2) EP2221825A1 (https=)
JP (1) JP2010182404A (https=)
KR (1) KR20100090214A (https=)
CN (1) CN101800080A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6556435B2 (ja) 2014-09-17 2019-08-07 東芝メモリ株式会社 半導体集積回路

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734313B2 (ja) * 1985-08-09 1995-04-12 株式会社日立製作所 Ｉｃメモリ装置
US4796235A (en) * 1987-07-22 1989-01-03 Motorola, Inc. Write protect mechanism for non-volatile memory
JPH01155595A (ja) * 1987-12-11 1989-06-19 Toshiba Corp 不揮発性半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
FR2771839B1 (fr) * 1997-11-28 2000-01-28 Sgs Thomson Microelectronics Memoire non volatile programmable et effacable electriquement
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
US5999477A (en) 1998-06-23 1999-12-07 Vanguard International Semiconductor Corporation Distributed array activation arrangement
US6208542B1 (en) * 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
JP2000293996A (ja) * 1999-02-03 2000-10-20 Seiko Instruments Inc メモリ回路
JP2000268584A (ja) * 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP3734408B2 (ja) * 2000-07-03 2006-01-11 シャープ株式会社 半導体記憶装置
US6731536B1 (en) * 2001-03-05 2004-05-04 Advanced Micro Devices, Inc. Password and dynamic protection of flash memory data
DE10126281A1 (de) * 2001-05-29 2002-12-12 Infineon Technologies Ag Programmgesteuerte Einheit
JP3843777B2 (ja) * 2001-08-10 2006-11-08 ソニー株式会社 半導体記憶装置
DE10162308A1 (de) * 2001-12-19 2003-07-03 Philips Intellectual Property Verfahren und Anordnung zur Zugriffssteuerung auf EEPROMs sowie ein entsprechendes Computerprogrammprodukt und eine entsprechendes computerlesbares Speichermedium
JP4133166B2 (ja) * 2002-09-25 2008-08-13 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6948041B2 (en) * 2002-10-24 2005-09-20 Micron Technology, Inc. Permanent memory block protection in a flash memory device
US6944083B2 (en) * 2003-11-17 2005-09-13 Sony Corporation Method for detecting and preventing tampering with one-time programmable digital devices
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
US7046570B1 (en) * 2004-06-02 2006-05-16 Xilinx, Inc. Programmable logic devices optionally convertible to one time programmable devices
JP4706626B2 (ja) * 2006-11-30 2011-06-22 株式会社デンソー 電子制御装置
JP2013069379A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US20100199028A1 (en) 2010-08-05
EP2221825A1 (en) 2010-08-25
KR20100090214A (ko) 2010-08-13
EP2221824A1 (en) 2010-08-25
JP2010182404A (ja) 2010-08-19

Similar Documents

Publication Publication Date Title
TWI473093B (zh) 電阻可變記憶體裝置及操作方法
US10956622B2 (en) Thermal hardware-based data security device that permanently erases data by using local heat generation phenomenon and method thereof
US9342410B2 (en) Storage module and method for determining whether to back-up a previously-written lower page of data before writing an upper page of data
US10521617B2 (en) Non-volatile memory device with secure read
TWI423265B (zh) 記憶體抹除管理系統
US11742028B2 (en) Non-volatile memory devices and systems with volatile memory features and methods for operating the same
KR102469172B1 (ko) 비휘발성 메모리 장치 및 이의 검증 라이트 방법
US10712976B2 (en) Storage protection unit
WO2015183501A1 (en) Event lock storage device
JP2011514568A (ja) ライトワンスメモリデバイスおよびライトメニーメモリデバイスを備えるコンピュータのストレージサブシステムおよび関連する方法
US10438664B2 (en) Non-volatile storage device with physical authentication
KR101795417B1 (ko) 비휘발성 메모리 셀 어레이 및 비휘발성 메모리 장치
CN104241526A (zh) 相变化存储器、其写入方法及其读取方法
KR102126760B1 (ko) 비휘발성 메모리 장치의 구동 방법
US9342257B2 (en) Computer system having main memory and control method thereof
CN101800080A (zh) 具有防伪永久存储选项的非易失性存储装置
US9183909B2 (en) Non-volatile semiconductor memory device
TWI906743B (zh) 多次可程式化記憶體裝置及方法
KR102059350B1 (ko) 국부적 발열 현상을 이용하여 영구적으로 데이터를 삭제하는 열적 하드웨어 기반의 보안 장치 및 방법
CN115035933B (zh) 一种相变存储器的操作方法、相变存储器及存储器系统
CN119902994A (zh) 存储器系统及其操作方法、存储介质
JP2010182404A5 (https=)
JP2004206821A (ja) 半導体記憶装置
JP2004252697A (ja) 記録装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20100811