ATE482452T1 - Verringerung des energieverbrauchs bei leseoperationen eines nichtflüchtigen speichers - Google Patents

Verringerung des energieverbrauchs bei leseoperationen eines nichtflüchtigen speichers

Info

Publication number
ATE482452T1
ATE482452T1 AT08746111T AT08746111T ATE482452T1 AT E482452 T1 ATE482452 T1 AT E482452T1 AT 08746111 T AT08746111 T AT 08746111T AT 08746111 T AT08746111 T AT 08746111T AT E482452 T1 ATE482452 T1 AT E482452T1
Authority
AT
Austria
Prior art keywords
word line
word lines
read
volatile memory
energy consumption
Prior art date
Application number
AT08746111T
Other languages
English (en)
Inventor
Deepak Sekar
Nima Mokhlesi
Hock So
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/740,091 external-priority patent/US7606079B2/en
Priority claimed from US11/740,096 external-priority patent/US7440327B1/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE482452T1 publication Critical patent/ATE482452T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/565—Multilevel memory comprising elements in triple well structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Power Sources (AREA)
AT08746111T 2007-04-25 2008-04-17 Verringerung des energieverbrauchs bei leseoperationen eines nichtflüchtigen speichers ATE482452T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/740,091 US7606079B2 (en) 2007-04-25 2007-04-25 Reducing power consumption during read operations in non-volatile storage
US11/740,096 US7440327B1 (en) 2007-04-25 2007-04-25 Non-volatile storage with reduced power consumption during read operations
PCT/US2008/060630 WO2008134253A1 (en) 2007-04-25 2008-04-17 Reducing power consumption during read operations in non-volatile storage

Publications (1)

Publication Number Publication Date
ATE482452T1 true ATE482452T1 (de) 2010-10-15

Family

ID=39596356

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08746111T ATE482452T1 (de) 2007-04-25 2008-04-17 Verringerung des energieverbrauchs bei leseoperationen eines nichtflüchtigen speichers

Country Status (8)

Country Link
EP (1) EP2140457B1 (de)
JP (1) JP5367697B2 (de)
KR (1) KR101428767B1 (de)
CN (1) CN101779247B (de)
AT (1) ATE482452T1 (de)
DE (1) DE602008002742D1 (de)
TW (1) TWI371754B (de)
WO (1) WO2008134253A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2920143B1 (fr) * 2007-08-20 2010-01-22 Aircelle Sa Dispositif de commande des actionneurs de maintenance de capots d'une nacelle de turboreacteur
JP2009193631A (ja) * 2008-02-14 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
JP4913191B2 (ja) * 2009-09-25 2012-04-11 株式会社東芝 不揮発性半導体記憶装置
KR102127416B1 (ko) 2013-06-27 2020-06-26 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 읽기 방법
KR102085096B1 (ko) * 2013-07-30 2020-03-05 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 제어하는 메모리 컨트롤러의 동작 방법
KR102256918B1 (ko) * 2014-09-23 2021-05-27 에스케이하이닉스 주식회사 가변적 ispp 방식을 이용하여 프로그램을 수행하는 3차원 비휘발성 반도체 메모리 장치, 데이터 저장 장치 및 사용자 장치
US9449700B2 (en) * 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
KR20190130828A (ko) * 2018-05-15 2019-11-25 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템
CN110610942B (zh) * 2018-06-15 2023-07-28 硅存储技术公司 用于减少闪存存储器系统中字线和控制栅极线之间的耦合的方法和装置
US11037635B1 (en) 2020-02-06 2021-06-15 Sandisk Technologies Llc Power management for multi-plane read operations
US11189351B2 (en) * 2020-03-27 2021-11-30 Sandisk Technologies Llc Peak and average current reduction for sub block memory operation
CN112614530B (zh) * 2021-01-04 2022-04-01 长江存储科技有限责任公司 三维存储器及其控制方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US5828603A (en) * 1997-04-23 1998-10-27 Atmel Corporation Memory device having a power supply-independent low power consumption bit line voltage clamp
JP2002133885A (ja) 2000-10-30 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
JP3938309B2 (ja) * 2002-01-22 2007-06-27 富士通株式会社 リードディスターブを緩和したフラッシュメモリ
JP4157065B2 (ja) 2004-03-29 2008-09-24 株式会社東芝 半導体記憶装置
US7064981B2 (en) 2004-08-04 2006-06-20 Micron Technology, Inc. NAND string wordline delay reduction
TWI333210B (en) * 2006-06-01 2010-11-11 Sandisk Corp Non-volatile storage system and verify operation for non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage

Also Published As

Publication number Publication date
KR101428767B1 (ko) 2014-08-08
JP5367697B2 (ja) 2013-12-11
WO2008134253A1 (en) 2008-11-06
EP2140457A1 (de) 2010-01-06
DE602008002742D1 (de) 2010-11-04
TWI371754B (en) 2012-09-01
JP2010525503A (ja) 2010-07-22
CN101779247B (zh) 2013-01-30
TW200910352A (en) 2009-03-01
CN101779247A (zh) 2010-07-14
EP2140457B1 (de) 2010-09-22
KR20100024918A (ko) 2010-03-08

Similar Documents

Publication Publication Date Title
ATE482452T1 (de) Verringerung des energieverbrauchs bei leseoperationen eines nichtflüchtigen speichers
ES2477493T3 (es) Memoria no volátil con operación multimodo dinámica
WO2010030692A3 (en) Multi-pass programming for memory with reduced data storage requirement
WO2009126516A3 (en) Analog read and write paths in a solid state memory device
TW200715291A (en) Semiconductor storage device having memory cell for storing data by using difference in threshold voltage
TW200615949A (en) Variable programming of non-volatile memory
DE602006016041D1 (de) Magnetischer Direktzugriffsspeicherarray mit Bit-/Wortleitungen für gemeinsame Schreibauswahl- und Leseoperationen
WO2007149677A3 (en) Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
DK1899975T3 (da) Integreret kredsløb med adskilt forsyningsspænding til lager, som er forskelligt fra forsyningsspændingen af det logiske kredsløb
WO2007130556A3 (en) Mimicking program verify drain resistance in a memory device
WO2008008466A3 (en) Current sensing for flash
ATE472803T1 (de) Floating-gate-speicher mit kopplungskompensation während der programmierung
JP2012104110A5 (de)
SG135056A1 (en) Data storage device using two types of storage medium
TW200723275A (en) Nonvolatile memory device
ATE512441T1 (de) Bereitstellung von energiereduktion bei der datenspeicherung in einem speicher
TW200605080A (en) Method of reading NAND memory to compensate for coupling between storage elements
TW200802364A (en) Nonvolatile semiconductor memory device
EP1796102A3 (de) Halbleiterspeicheranordnung
WO2009097681A8 (en) Flexible memory operations in nand flash devices
WO2007130615A3 (en) A method for reading a multilevel cell in a non-volatile memory device
TW200639869A (en) Memory having a portion that can be switched between use as data and use as error correction code (ECC)
TW200715293A (en) Memory device and method for operating the same
TW200834304A (en) Non-volatile semiconductor memory system and data write method thereof
SG151220A1 (en) Method and device for irreversibly programming and reading nonvolatile memory cells

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties