TWI371754B - Apparatus and method of reducing power consumption during read operations in non-volatile storage - Google Patents
Apparatus and method of reducing power consumption during read operations in non-volatile storageInfo
- Publication number
- TWI371754B TWI371754B TW097115459A TW97115459A TWI371754B TW I371754 B TWI371754 B TW I371754B TW 097115459 A TW097115459 A TW 097115459A TW 97115459 A TW97115459 A TW 97115459A TW I371754 B TWI371754 B TW I371754B
- Authority
- TW
- Taiwan
- Prior art keywords
- word line
- word lines
- power consumption
- volatile storage
- read
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/565—Multilevel memory comprising elements in triple well structure
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Power Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/740,091 US7606079B2 (en) | 2007-04-25 | 2007-04-25 | Reducing power consumption during read operations in non-volatile storage |
US11/740,096 US7440327B1 (en) | 2007-04-25 | 2007-04-25 | Non-volatile storage with reduced power consumption during read operations |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200910352A TW200910352A (en) | 2009-03-01 |
TWI371754B true TWI371754B (en) | 2012-09-01 |
Family
ID=39596356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097115459A TWI371754B (en) | 2007-04-25 | 2008-04-25 | Apparatus and method of reducing power consumption during read operations in non-volatile storage |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2140457B1 (zh) |
JP (1) | JP5367697B2 (zh) |
KR (1) | KR101428767B1 (zh) |
CN (1) | CN101779247B (zh) |
AT (1) | ATE482452T1 (zh) |
DE (1) | DE602008002742D1 (zh) |
TW (1) | TWI371754B (zh) |
WO (1) | WO2008134253A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2920143B1 (fr) * | 2007-08-20 | 2010-01-22 | Aircelle Sa | Dispositif de commande des actionneurs de maintenance de capots d'une nacelle de turboreacteur |
JP2009193631A (ja) * | 2008-02-14 | 2009-08-27 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4913191B2 (ja) * | 2009-09-25 | 2012-04-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR102127416B1 (ko) | 2013-06-27 | 2020-06-26 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 읽기 방법 |
KR102085096B1 (ko) * | 2013-07-30 | 2020-03-05 | 삼성전자주식회사 | 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 제어하는 메모리 컨트롤러의 동작 방법 |
KR102256918B1 (ko) * | 2014-09-23 | 2021-05-27 | 에스케이하이닉스 주식회사 | 가변적 ispp 방식을 이용하여 프로그램을 수행하는 3차원 비휘발성 반도체 메모리 장치, 데이터 저장 장치 및 사용자 장치 |
US9449700B2 (en) * | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
KR20190130828A (ko) * | 2018-05-15 | 2019-11-25 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템 |
CN110610942B (zh) * | 2018-06-15 | 2023-07-28 | 硅存储技术公司 | 用于减少闪存存储器系统中字线和控制栅极线之间的耦合的方法和装置 |
US11037635B1 (en) | 2020-02-06 | 2021-06-15 | Sandisk Technologies Llc | Power management for multi-plane read operations |
US11189351B2 (en) * | 2020-03-27 | 2021-11-30 | Sandisk Technologies Llc | Peak and average current reduction for sub block memory operation |
CN112614530B (zh) * | 2021-01-04 | 2022-04-01 | 长江存储科技有限责任公司 | 三维存储器及其控制方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270969A (en) * | 1987-06-29 | 1993-12-14 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with nand cell structure |
US6034899A (en) * | 1987-06-29 | 2000-03-07 | Kabushiki Kaisha Toshiba | Memory cell of nonvolatile semiconductor memory device |
US5828603A (en) * | 1997-04-23 | 1998-10-27 | Atmel Corporation | Memory device having a power supply-independent low power consumption bit line voltage clamp |
JP2002133885A (ja) | 2000-10-30 | 2002-05-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP3938309B2 (ja) * | 2002-01-22 | 2007-06-27 | 富士通株式会社 | リードディスターブを緩和したフラッシュメモリ |
JP4157065B2 (ja) | 2004-03-29 | 2008-09-24 | 株式会社東芝 | 半導体記憶装置 |
US7064981B2 (en) | 2004-08-04 | 2006-06-20 | Micron Technology, Inc. | NAND string wordline delay reduction |
TWI333210B (en) * | 2006-06-01 | 2010-11-11 | Sandisk Corp | Non-volatile storage system and verify operation for non-volatile storage using different voltages |
US7310272B1 (en) * | 2006-06-02 | 2007-12-18 | Sandisk Corporation | System for performing data pattern sensitivity compensation using different voltage |
-
2008
- 2008-04-17 DE DE602008002742T patent/DE602008002742D1/de active Active
- 2008-04-17 AT AT08746111T patent/ATE482452T1/de not_active IP Right Cessation
- 2008-04-17 JP JP2010506398A patent/JP5367697B2/ja not_active Expired - Fee Related
- 2008-04-17 EP EP08746111A patent/EP2140457B1/en not_active Not-in-force
- 2008-04-17 KR KR1020097024510A patent/KR101428767B1/ko active IP Right Grant
- 2008-04-17 CN CN2008800204618A patent/CN101779247B/zh not_active Expired - Fee Related
- 2008-04-17 WO PCT/US2008/060630 patent/WO2008134253A1/en active Application Filing
- 2008-04-25 TW TW097115459A patent/TWI371754B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101779247A (zh) | 2010-07-14 |
WO2008134253A1 (en) | 2008-11-06 |
TW200910352A (en) | 2009-03-01 |
DE602008002742D1 (de) | 2010-11-04 |
JP2010525503A (ja) | 2010-07-22 |
CN101779247B (zh) | 2013-01-30 |
JP5367697B2 (ja) | 2013-12-11 |
EP2140457A1 (en) | 2010-01-06 |
KR20100024918A (ko) | 2010-03-08 |
ATE482452T1 (de) | 2010-10-15 |
KR101428767B1 (ko) | 2014-08-08 |
EP2140457B1 (en) | 2010-09-22 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |