ATE532183T1 - Erhöhter lesedurchsatz bei einem nichtflüchtigen speicher - Google Patents

Erhöhter lesedurchsatz bei einem nichtflüchtigen speicher

Info

Publication number
ATE532183T1
ATE532183T1 AT09754332T AT09754332T ATE532183T1 AT E532183 T1 ATE532183 T1 AT E532183T1 AT 09754332 T AT09754332 T AT 09754332T AT 09754332 T AT09754332 T AT 09754332T AT E532183 T1 ATE532183 T1 AT E532183T1
Authority
AT
Austria
Prior art keywords
storage elements
interest
sensing
volatile memory
data
Prior art date
Application number
AT09754332T
Other languages
English (en)
Inventor
Mark Murin
Mark Shlick
Original Assignee
Sandisk Il Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Il Ltd filed Critical Sandisk Il Ltd
Application granted granted Critical
Publication of ATE532183T1 publication Critical patent/ATE532183T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
AT09754332T 2008-05-27 2009-05-24 Erhöhter lesedurchsatz bei einem nichtflüchtigen speicher ATE532183T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/127,136 US7952928B2 (en) 2008-05-27 2008-05-27 Increasing read throughput in non-volatile memory
PCT/IL2009/000514 WO2009144713A1 (en) 2008-05-27 2009-05-24 Increasing read throughput in non-volatile memory

Publications (1)

Publication Number Publication Date
ATE532183T1 true ATE532183T1 (de) 2011-11-15

Family

ID=40942813

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09754332T ATE532183T1 (de) 2008-05-27 2009-05-24 Erhöhter lesedurchsatz bei einem nichtflüchtigen speicher

Country Status (8)

Country Link
US (1) US7952928B2 (de)
EP (1) EP2291848B1 (de)
JP (1) JP5250103B2 (de)
KR (1) KR101518437B1 (de)
CN (1) CN102067238B (de)
AT (1) ATE532183T1 (de)
TW (1) TW200951962A (de)
WO (1) WO2009144713A1 (de)

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TWI399644B (zh) * 2009-12-24 2013-06-21 Univ Nat Taiwan 非揮發記憶體區塊管理方法
JP5385435B1 (ja) * 2012-07-18 2014-01-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその読み出し方法
KR102090677B1 (ko) 2013-09-16 2020-03-18 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 동작 방법
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US9595345B2 (en) * 2014-08-07 2017-03-14 Sandisk Technologies Llc Adaptive selective bit line pre-charge for current savings and fast programming
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US10726922B2 (en) * 2018-06-05 2020-07-28 Sandisk Technologies Llc Memory device with connected word lines for fast programming
US10983724B2 (en) * 2018-09-14 2021-04-20 Micron Technology, Inc. Controller with distributed sequencer components
KR102599046B1 (ko) 2018-11-16 2023-11-06 삼성전자주식회사 리커버리 동작을 수행하는 메모리 컨트롤러, 이의 동작 방법 및 이를 포함하는 메모리 시스템
US20200243121A1 (en) * 2019-01-30 2020-07-30 Macronix International Co., Ltd. Non-volatile memory and program method thereof

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Also Published As

Publication number Publication date
CN102067238B (zh) 2013-11-06
TW200951962A (en) 2009-12-16
KR101518437B1 (ko) 2015-05-11
JP5250103B2 (ja) 2013-07-31
WO2009144713A1 (en) 2009-12-03
JP2011522346A (ja) 2011-07-28
EP2291848A1 (de) 2011-03-09
EP2291848B1 (de) 2011-11-02
CN102067238A (zh) 2011-05-18
US7952928B2 (en) 2011-05-31
US20090296487A1 (en) 2009-12-03
KR20110037970A (ko) 2011-04-13

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