ATE544157T1 - Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen - Google Patents

Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen

Info

Publication number
ATE544157T1
ATE544157T1 AT07797703T AT07797703T ATE544157T1 AT E544157 T1 ATE544157 T1 AT E544157T1 AT 07797703 T AT07797703 T AT 07797703T AT 07797703 T AT07797703 T AT 07797703T AT E544157 T1 ATE544157 T1 AT E544157T1
Authority
AT
Austria
Prior art keywords
volatile storage
voltage
verification operation
various voltage
programming
Prior art date
Application number
AT07797703T
Other languages
English (en)
Inventor
Gerrit Hemink
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/421,667 external-priority patent/US7440331B2/en
Priority claimed from US11/421,682 external-priority patent/US7457163B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE544157T1 publication Critical patent/ATE544157T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT07797703T 2006-06-01 2007-05-23 Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen ATE544157T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/421,667 US7440331B2 (en) 2006-06-01 2006-06-01 Verify operation for non-volatile storage using different voltages
US11/421,682 US7457163B2 (en) 2006-06-01 2006-06-01 System for verifying non-volatile storage using different voltages
PCT/US2007/069589 WO2007143398A2 (en) 2006-06-01 2007-05-23 Verify operation for non-volatile storage using different voltages

Publications (1)

Publication Number Publication Date
ATE544157T1 true ATE544157T1 (de) 2012-02-15

Family

ID=38802196

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07797703T ATE544157T1 (de) 2006-06-01 2007-05-23 Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen

Country Status (6)

Country Link
EP (1) EP2022060B1 (de)
JP (1) JP4995273B2 (de)
KR (1) KR101012132B1 (de)
AT (1) ATE544157T1 (de)
TW (1) TWI333210B (de)
WO (1) WO2007143398A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101779247B (zh) * 2007-04-25 2013-01-30 桑迪士克科技股份有限公司 在非易失性存储器中的读取操作期间减小功耗
JP4510060B2 (ja) 2007-09-14 2010-07-21 株式会社東芝 不揮発性半導体記憶装置の読み出し／書き込み制御方法
JP2009193631A (ja) 2008-02-14 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5595901B2 (ja) * 2010-12-28 2014-09-24 株式会社東芝 不揮発性半導体記憶装置
JP2013069388A (ja) 2011-09-26 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置
US8630118B2 (en) * 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8861269B2 (en) 2013-03-05 2014-10-14 Sandisk Technologies Inc. Internal data load for non-volatile storage
KR102182804B1 (ko) 2014-07-29 2020-11-25 삼성전자주식회사 메모리 장치의 독출 방법
US11049578B1 (en) * 2020-02-19 2021-06-29 Sandisk Technologies Llc Non-volatile memory with program verify skip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3829088B2 (ja) * 2001-03-29 2006-10-04 株式会社東芝 半導体記憶装置
JP3938309B2 (ja) * 2002-01-22 2007-06-27 富士通株式会社 リードディスターブを緩和したフラッシュメモリ
JP3863485B2 (ja) * 2002-11-29 2006-12-27 株式会社東芝 不揮発性半導体記憶装置
JP3884448B2 (ja) * 2004-05-17 2007-02-21 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
KR20090007297A (ko) 2009-01-16
EP2022060B1 (de) 2012-02-01
WO2007143398A2 (en) 2007-12-13
EP2022060A2 (de) 2009-02-11
JP2009539203A (ja) 2009-11-12
TW200805371A (en) 2008-01-16
TWI333210B (en) 2010-11-11
WO2007143398A3 (en) 2008-03-13
JP4995273B2 (ja) 2012-08-08
KR101012132B1 (ko) 2011-02-07

Similar Documents

Publication Publication Date Title
ATE544157T1 (de) Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen
JP2004152299A5 (de)
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
ATE476740T1 (de) Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen
CN103489479B (zh) 半导体存储器件及其操作方法
WO2007130556A3 (en) Mimicking program verify drain resistance in a memory device
WO2013016401A4 (en) Simultaneous sensing of multiple wordlines and detection of nand failures
WO2009095902A3 (en) Systems and methods for handling immediate data errors in flash memory
ATE546782T1 (de) Speichersystem
ATE496372T1 (de) Vorrichtung und verfahren für speicheroperationen unter verwendung adressabhängiger bedingungen
TW200608404A (en) Operating non-volatile memory without read disturb limitations
DE602005021544D1 (de) System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
JP2013020694A5 (de)
ATE496373T1 (de) Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen
TW200709210A (en) Memory controller, non-volatile memory device, non-volatile memory system, and data writing method
US7272758B2 (en) Defective memory block identification in a memory device
ATE532183T1 (de) Erhöhter lesedurchsatz bei einem nichtflüchtigen speicher
US20140075268A1 (en) Method for dodging bad page and bad block caused by suddenly power off
TW200632917A (en) Non-volatile memory device having page buffer for verifying pre-erase
CN101552036A (zh) 具有哑单元的快闪存储设备及其操作方法
US20130159798A1 (en) Non-volatile memory device and operating method thereof
US9019780B1 (en) Non-volatile memory apparatus and data verification method thereof
TWI371754B (en) Apparatus and method of reducing power consumption during read operations in non-volatile storage
KR20110001591A (ko) 불휘발성 메모리 소자의 동작 방법