JP2010123937A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2010123937A
JP2010123937A JP2009243739A JP2009243739A JP2010123937A JP 2010123937 A JP2010123937 A JP 2010123937A JP 2009243739 A JP2009243739 A JP 2009243739A JP 2009243739 A JP2009243739 A JP 2009243739A JP 2010123937 A JP2010123937 A JP 2010123937A
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Prior art keywords
layer
oxide semiconductor
film
thin film
mask
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Japanese (ja)
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JP2010123937A5 (enExample
Inventor
Shunichi Ito
俊一 伊藤
Miyuki Hosohane
みゆき 細羽
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009243739A priority Critical patent/JP2010123937A/ja
Publication of JP2010123937A publication Critical patent/JP2010123937A/ja
Publication of JP2010123937A5 publication Critical patent/JP2010123937A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009243739A 2008-10-24 2009-10-22 半導体装置の作製方法 Withdrawn JP2010123937A (ja)

Priority Applications (1)

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JP2009243739A JP2010123937A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2008274699 2008-10-24
JP2009243739A JP2010123937A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法

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JP2015003013A Division JP6091532B2 (ja) 2008-10-24 2015-01-09 半導体装置の作製方法

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JP2010123937A true JP2010123937A (ja) 2010-06-03
JP2010123937A5 JP2010123937A5 (enExample) 2012-12-06

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JP2009243739A Withdrawn JP2010123937A (ja) 2008-10-24 2009-10-22 半導体装置の作製方法
JP2015003013A Active JP6091532B2 (ja) 2008-10-24 2015-01-09 半導体装置の作製方法
JP2017020425A Withdrawn JP2017076828A (ja) 2008-10-24 2017-02-07 半導体装置の作製方法
JP2019072436A Active JP6739575B2 (ja) 2008-10-24 2019-04-05 半導体装置
JP2020124269A Withdrawn JP2020188276A (ja) 2008-10-24 2020-07-21 半導体装置

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JP2017020425A Withdrawn JP2017076828A (ja) 2008-10-24 2017-02-07 半導体装置の作製方法
JP2019072436A Active JP6739575B2 (ja) 2008-10-24 2019-04-05 半導体装置
JP2020124269A Withdrawn JP2020188276A (ja) 2008-10-24 2020-07-21 半導体装置

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US (2) US8343799B2 (enExample)
JP (5) JP2010123937A (enExample)
TW (3) TWI624865B (enExample)
WO (1) WO2010047288A1 (enExample)

Cited By (13)

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WO2012008192A1 (ja) * 2010-07-15 2012-01-19 シャープ株式会社 回路基板、表示装置、及び、回路基板の製造方法
JP2012209557A (ja) * 2011-03-28 2012-10-25 Boe Technology Group Co Ltd 非晶質酸化物薄膜トランジスタ及びその製造方法、その薄膜トランジスタを含むディスプレイパネル
JP2014029994A (ja) * 2012-06-27 2014-02-13 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2014157893A (ja) * 2013-02-15 2014-08-28 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2015515121A (ja) * 2012-02-23 2015-05-21 京東方科技集團股▲ふん▼有限公司 薄膜トランジスタアレイ基板及びその製造方法
JP2015521383A (ja) * 2012-05-18 2015-07-27 京東方科技集團股▲ふん▼有限公司 薄膜トランジスタアレイ基板及びその製造方法、表示パネル、表示装置
KR20150116975A (ko) * 2014-04-08 2015-10-19 삼성디스플레이 주식회사 센서 기판, 이의 제조 방법 및 이를 갖는 표시장치
JP2015216377A (ja) * 2012-11-16 2015-12-03 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2016001673A (ja) * 2014-06-12 2016-01-07 三菱電機株式会社 薄膜トランジスタ、アクティブマトリックス基板、薄膜トランジスタの製造方法およびアクティブマトリックス基板の製造方法
JP2017005279A (ja) * 2011-12-02 2017-01-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017224863A (ja) * 2012-11-16 2017-12-21 株式会社半導体エネルギー研究所 半導体装置
JP2018125569A (ja) * 2010-07-02 2018-08-09 株式会社半導体エネルギー研究所 半導体装置
KR20200093215A (ko) * 2019-01-28 2020-08-05 연세대학교 산학협력단 이중 채널층을 구비한 박막 트랜지스터 및 그 제조 방법

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CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5616012B2 (ja) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
CN111081550A (zh) * 2009-06-30 2020-04-28 株式会社半导体能源研究所 用于制造半导体器件的方法及半导体器件
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN105448937A (zh) 2009-09-16 2016-03-30 株式会社半导体能源研究所 晶体管及显示设备
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101693544B1 (ko) 2009-09-24 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101980505B1 (ko) 2009-10-08 2019-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
WO2011043203A1 (en) 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101629194B1 (ko) 2009-10-30 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102513073B1 (ko) 2009-11-13 2023-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN103746001B (zh) 2009-12-04 2017-05-03 株式会社半导体能源研究所 显示装置
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US9142804B2 (en) * 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
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