JP2010080913A - 樹脂封止型半導体装置及びその製造方法、樹脂封止型電子装置 - Google Patents
樹脂封止型半導体装置及びその製造方法、樹脂封止型電子装置 Download PDFInfo
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- JP2010080913A JP2010080913A JP2009108811A JP2009108811A JP2010080913A JP 2010080913 A JP2010080913 A JP 2010080913A JP 2009108811 A JP2009108811 A JP 2009108811A JP 2009108811 A JP2009108811 A JP 2009108811A JP 2010080913 A JP2010080913 A JP 2010080913A
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Abstract
【解決手段】本発明の樹脂封止型半導体装置の製造方法によれば、リードフレーム1に半導体チップ2等を搭載し、樹脂封止した後に、タイバー9を切断する場合、前記タイバー9の切断をプレス加工時の前記リードフレーム1のリードバリ10がある方向から行なう。また、本発明の樹脂封止型電子装置においては、チップコンデンサ27は、リードL1とアイランド21のバリ形成面31に導電性ペースト33を介して接着される。バリ形成面31はダレ面32より表面積が大きいので、接着面積を大きくできる。また、リードL1の制御電極40に対する溶接面は、バリ形成面31の反対面であるダレ面32とする。
【選択図】図11
Description
また、本発明の樹脂封止型電子装置によれば、アウターリードの外部電極に対する溶接不良を防止することができると共に、リードに対する電子部品の接着面積を大きく確保して接続不良を防止することができる。
本発明の第1の実施形態は、プレス加工により形成されたリードフレーム1の小さなリードバリ10に被着したハンダメッキ層11が、タイバー9の切断時に当該リードバリ10から剥がれて、ヒゲ状のハンダバリ12になり、アウターリード8a等同士をショートする弊害の防止に関する発明である。以下に、図1〜図11に基づいて説明する。
本発明の第2の実施形態について説明する。この場合は半導体チップ2等がダイボンド等されるリードフレーム1の面が、プレス加工によりリードバリ10が発生した面側になる点のみが第1の実施形態と異なる。したがって、詳細な説明は割愛する。第2の実施形態においては、チップコンデンサ4などを接着する場合に、リードバリ10が存在し、チップコンデンサ4の電極面とリードバリ10の先端が直接接触することになると、リードフレーム1との接着がうまくいかない恐れがあるので留意する必要がある。チップコンデンサ4の2つの電極が長さの異なる2つのリードバリ10に接触し、チップコンデンサ4が傾いて接着される場合があるからである。
〔第3の実施形態〕
次に、本発明の第3の実施形態について図面を参照して説明する。第3の実施形態は、リードバリ30が存在することによる有利な効果を利用し、リードバリ30が抱える不利益を回避するためのリードフレームの利用を図った樹脂封止型電子装置に関するものである。第1の実施形態と同様な図面も使用されるが、符号、表現を変えて異なる観点から説明する。第3の実施形態も、金型を用いて打ち抜き形成したリードフレームを用いた樹脂封止型電子装置に特徴を有するものであるが、先ず、リードフレームの構造について説明し、その後、樹脂封止型電子装置の外部電極への取り付け構造について説明することにする。
5a,5b、6a,6b,6c ボンディングワイヤ 7 樹脂パッケージ
8 外枠 8a アウターリード 8b インナーリード 9 タイバー
9a,9b,9c,9d タイバー切断時の切断面とリードバリの交差点
9d 外枠切断時の切断面とリードバリの交差点 10 リードバリ
11 ハンダメッキ層 12 ヒゲ状ハンダバリ 13 アイランド
20,21 アイランド 22 支持部 23 吊りリード 24 タイバー
25 IGBTチップ 26 制御ICチップ 27 チップコンデンサ
28 樹脂パッケージ 30 リードバリ 31 バリ形成面 32 ダレ面
33 導電性ペースト 40 制御電極 41 熔接部 L1〜L6 リード
P1〜P7 パッド W1〜W5 金属細線 200 樹脂封止型電子装置
Claims (9)
- リードフレームのアイランド上に半導体チップをダイボンドする工程と、
前記半導体チップと前記リードフレームを電気的に接続する工程と、
前記半導体チップがダイボンドされた前記リードフレームを樹脂パッケージで封止する工程と、
前記樹脂パッケージの外部に露出したタイバーを切断する工程と、を有し、
前記タイバーの切断がプレス加工時の前記リードフレームのバリがある面からその反対側の面に向かって行われることを特徴とする樹脂封止型半導体装置の製造方法。 - 前記半導体チップのダイボンドがプレス加工時の前記リードフレームのバリのある面に為されることを特徴とする請求項1に記載の樹脂封止型半導体装置の製造方法。
- 半導体チップが固着されたアイランドと、
前記アイランドの近傍に一端が位置する複数のリードと、
前記半導体チップと前記リードとを接続する金属細線と、
前記アイランド、リード及び半導体チップを封止する樹脂パッケージとを有する樹脂封止型半導体装置において、
前記樹脂パッケージから外部に延在するリードは、半導体チップの実装面から対向する面側に向かって打ち向かれ、対抗する面にバリを有すると共に、メッキが施され、
前記パッケージから外部に延在するリードと、当該リードを保持していたタイバーの部分は前記対向する面から前記実装面に向かってなる切断面を有することを特徴とする樹脂封止型半導体装置。 - 前記メッキはハンダであることを特徴とする請求項3に記載の樹脂封止型半導体装置。
- リードと、前記リード上に接着された電子部品と、前記電子部品を封止する樹脂パッケージと、前記リードが前記樹脂パッケージの外にアウターリードとして導出され、このアウターリードが溶接された外部電極と、を備え、
前記リードは金属板を金型で打ち抜くことにより形成されており、前記リードの電子部品接着面は打ち抜きによりバリが形成されるバリ形成面であり、
前記リードの溶接面は前記バリ形成面の反対面になっていることを特徴とする樹脂封止型電子装置。 - 前記バリ形成面のバリが除去されていることを特徴とする請求項5に記載の樹脂封止型電子装置。
- 前記電子部品はチップコンデンサであり、このチップコンデンサの裏面端子が前記リードのバリ形成面に接着されたことを特徴とする請求項5または6に記載の樹脂封止型電子装置。
- アイランドと、前記アイランド上に接着された半導体チップと、前記アイランドに隣接して延在したリードと、前記リード上及び前記アイランド上にそれぞれ裏面端子が接着され前記半導体チップのノイズ除去用のチップコンデンサと、前記半導体チップ及び前記チップコンデンサを封止する樹脂パッケージと、前記リードが前記樹脂パッケージの外にアウターリードとして導出され、このアウターリードが溶接された外部電極とを備え、
前記リードが前記樹脂パッケージの外にアウターリードとして導出されると共に、外部電極に溶接され、
前記リードは金属板を金型で打ち抜くことにより形成されており、前記リードのチップコンデンサの接着面は打ち抜きによりバリが形成されるバリ形成面であり、
前記リードの溶接面は前記バリ形成面の反対面になっていることを特徴とする樹脂封止型電子装置。 - 前記外部電極は、自動車の電子制御部の制御電極であることを特徴とする請求項5乃至8のいずれかに記載の樹脂封止型電子装置。
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US12/549,152 US8502360B2 (en) | 2008-08-28 | 2009-08-27 | Resin sealing type semiconductor device and method of manufacturing the same, and resin sealing type electronic device |
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JPH05275591A (ja) * | 1992-03-26 | 1993-10-22 | Sumitomo Metal Mining Co Ltd | 半導体装置用icリードフレームの製造方法 |
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JP3116770B2 (ja) | 1995-04-24 | 2000-12-11 | 株式会社ダイフク | 洗車設備 |
JP2938038B1 (ja) | 1998-06-11 | 1999-08-23 | 大分日本電気株式会社 | タイバー切断金型 |
JP3538704B2 (ja) | 1999-10-04 | 2004-06-14 | 株式会社村田製作所 | 電子部品の製造方法 |
US6730546B2 (en) * | 2000-09-01 | 2004-05-04 | Seiko Epson Corporation | Molded component and method of producing the same |
JP4157761B2 (ja) | 2002-12-16 | 2008-10-01 | 株式会社日立製作所 | 生体光計測用ヘッドギア及びそれを用いた生体光計測装置 |
US20040215030A1 (en) * | 2003-04-22 | 2004-10-28 | Norman John Anthony Thomas | Precursors for metal containing films |
JP4471600B2 (ja) | 2003-08-20 | 2010-06-02 | 三洋電機株式会社 | 回路装置 |
JP4334364B2 (ja) * | 2004-01-26 | 2009-09-30 | 株式会社リコー | 半導体装置及び半導体装置の製造方法 |
JP4315833B2 (ja) * | 2004-02-18 | 2009-08-19 | 三洋電機株式会社 | 回路装置 |
DE102005043928B4 (de) * | 2004-09-16 | 2011-08-18 | Sharp Kk | Optisches Halbleiterbauteil und Verfahren zu dessen Herstellung |
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- 2009-04-28 JP JP2009108811A patent/JP5543724B2/ja active Active
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JPS554985A (en) * | 1978-06-27 | 1980-01-14 | Nec Kyushu Ltd | Lead frame for semiconductor device |
JPS5994449A (ja) * | 1983-07-01 | 1984-05-31 | Hitachi Ltd | 半導体装置 |
JPS63257256A (ja) * | 1987-04-15 | 1988-10-25 | Hitachi Ltd | リ−ドフレ−ム |
JPS6454750A (en) * | 1987-08-26 | 1989-03-02 | Fujitsu Miyagi Electron Kk | Manufacture of resin-sealed semiconductor device |
JPH03116770A (ja) * | 1989-09-28 | 1991-05-17 | Nec Kyushu Ltd | 半導体装置用リードフレーム |
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JPH05275591A (ja) * | 1992-03-26 | 1993-10-22 | Sumitomo Metal Mining Co Ltd | 半導体装置用icリードフレームの製造方法 |
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WO2023171343A1 (ja) * | 2022-03-07 | 2023-09-14 | ローム株式会社 | 半導体装置 |
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CN101661894B (zh) | 2012-01-11 |
JP5543724B2 (ja) | 2014-07-09 |
CN101661894A (zh) | 2010-03-03 |
US8502360B2 (en) | 2013-08-06 |
US20100052124A1 (en) | 2010-03-04 |
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