CN101661894B - 树脂密封型半导体装置及其制造方法、树脂密封型电子装置 - Google Patents

树脂密封型半导体装置及其制造方法、树脂密封型电子装置 Download PDF

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CN101661894B
CN101661894B CN2009101681305A CN200910168130A CN101661894B CN 101661894 B CN101661894 B CN 101661894B CN 2009101681305 A CN2009101681305 A CN 2009101681305A CN 200910168130 A CN200910168130 A CN 200910168130A CN 101661894 B CN101661894 B CN 101661894B
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lead
wire
burr
face
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CN101661894A (zh
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佐佐木武
新藤昌浩
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Sanyo Electric Co Ltd
System Solutions Co Ltd
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Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Abstract

本发明提供树脂密封型半导体装置及其制造方法、树脂密封型电子装置。该树脂密封型电子装置谋求消灭切断连接杆时产生的焊锡毛刺，可靠性高。防止树脂密封型电子装置的引线和外部电极的焊接不良，且增大引线与电子零件的接合面积，防止连接不良。根据本发明的树脂密封型半导体装置的制造方法，将半导体芯片等搭载在引线框上，进行树脂封装之后，切断连接杆的情况下，从冲压加工时的上述引线框的存在引线毛刺的方向切断上述连接杆。在本发明的树脂密封型电子装置中，芯片电容器借助导电性糊剂接合在引线和岛的毛刺形成面。毛刺形成面的表面积大于塌角面的表面积，所以能增大焊接面积。引线的与控制电极的焊接面为作为毛刺形成面的相反面的塌角面。

Description

树脂密封型半导体装置及其制造方法、树脂密封型电子装置
技术领域
本发明涉及对电子零件等进行了树脂密封的树脂密封型半导体装置及其制造方法。而且，本发明涉及对电子零件等进行了树脂密封的树脂密封型电子装置。
背景技术
以往公知有将树脂密封型半导体装置、电子零件等密封在树脂封装件内的树脂密封型电子装置，该树脂密封型半导体装置是将半导体芯片密封在树脂封装件内而形成的。该树脂密封型半导体装置等如下所述这样完成的：准备引线框，通过焊锡、Ag糊剂等将各种半导体芯片、电子零件进行芯片接合(diebond)等而接合在该引线框上，接着用Al线、Au线对半导体芯片等和引线框之间进行引线接合(wire bonding)，从而将半导体芯片等和引线框之间电连接，接着去除外部引线部分而进行树脂密封，之后切断连接杆，根据需要，进行引线的弯曲等。此外，还公知有一种通过锡焊等将从树脂封装件导出的外部引线与PCB基板上的电极连接的技术。
树脂密封型半导体装置及其制造方法、树脂密封型电子装置例如记载在以下的专利文献1、非专利文献1中。
专利文献1：日本特开2005-64076号公报
非专利文献1：图解最尖端的半导体封装技术总汇/半导体新技术研究会编(2007年9月25日第一版第1次印刷发行，株式会社工业调查会)
树脂密封型半导体装置等所使用的引线框是将Cu材料等作为基底金属通过冲压加工而形成的。通常，在引线框表面覆盖有镀Ni层等。而且，冲压加工是对由Cu材料构成的金属板从一个面对另一个面施加大的力来进行的，所以由具有粘性的Cu材料形成的引线框的另一个面上发生小的引线毛刺。覆盖在引线框表面的镀Ni层也覆盖在该小的引线毛刺上。该引线毛刺对树脂密封型半导体装置及其制造工序、树脂密封型电子装置造成如下那样的恶劣影响。
在树脂密封型半导体装置的制造工序中，在树脂密封工序结束后，为了确保外部引线的表面耐腐蚀性和焊接性，设有在外部引线表面进行Sn-Cu等Sn系合金、Sn系镀焊锡等，之后切断连接杆等的工序。
在镀焊锡的情况下，镀焊锡层被形成在整个外部引线上，但焊锡也以不稳定的状态被电镀在由冲压加工产生的小的引线毛刺上。覆盖小的引线毛刺的镀焊锡层在下一个连接杆的切断工序中被剥离而成为须状的焊锡毛刺，造成外部引线彼此短路等恶劣影响。
此外，在将树脂密封型电子装置安装到汽车的电子控制部来使用的情况下，考虑到保证汽车在振动作用下的机械强度和可靠性等问题，有时将弯曲的外部引线面点焊在上述电子控制部的外部电极的侧面上。这种情况下，有可能上述突起状的引线毛刺成为障碍，外部引线表面与外部电极表面不紧密结合，发生焊接不良。另一方面，在将电子零件接合在树脂封装件内部的内部引线上的情况下，引线毛刺形成面的相反面是端部带有圆弧的塌角面，在将电子零件接合在这样的塌角面上的情况下，存在接合面积变小、导致连接不良等这样的问题。
发明内容
本发明的树脂密封型半导体装置的制造方法，其特征在于，包括：将半导体芯片芯片接合在引线框的岛上的工序；将上述半导体芯片和上述引线框电连接的工序；用树脂封装件对芯片接合有上述半导体芯片的上述引线框进行密封的工序；以及将露出到上述树脂封装件的外部的连接杆切断的工序，上述连接杆的切断从冲压加工时的上述引线框的具有毛刺的面朝着具有毛刺的面的相反一侧的面进行。
此外，本发明的树脂密封型半导体装置是一种电子装置，其包括：固定有半导体芯片的岛；一端位于上述岛的附近的多条引线；将上述半导体芯片和上述引线连接的金属细线；以及对上述岛、引线和半导体芯片进行密封的树脂封装件，其特征在于，从上述树脂封装件向外部延伸的外部引线是从用于安装半导体芯片的安装面朝着相反的面一侧进行冲切而形成的，在相反的面上具有毛刺，并且被实施电镀，从上述封装件向外部延伸的引线和保持该引线的连接杆的部分具有从上述相反的面朝着上述安装面而形成的切断面。
此外，本发明的树脂密封型电子装置，其特征在于，包括：引线；接合在上述引线上的电子零件；对上述电子零件进行密封的树脂封装件；以及焊接有外部引线的外部电极，该外部引线是将上述引线导出到上述树脂封装件之外而作为外部引线，上述引线是用模具对金属板进行冲切而形成的，上述引线的电子零件接合面是由于冲切而形成有引线毛刺的毛刺形成面，上述外部引线的焊接面是上述引线毛刺形成面的相反面。
根据本发明的树脂密封型半导体装置的制造方法，能够防止因引线毛刺10产生须状的焊锡毛刺12，能够制造可靠性高的树脂密封型半导体装置，该引线毛刺10是由于冲压加工而形成在引线框1上的。
此外，根据本发明的树脂密封型电子装置，能够防止外部引线与外部电极的焊接不良，并且能够较大地确保电子零件与引线的焊接面积而能够防止连接不良。
附图说明
图1是表示本发明的第1实施方式的树脂密封型半导体装置的制造方法的俯视图。
图2是表示本发明的第1实施方式的树脂密封型半导体装置的制造方法的概略的俯视图。
图3是本发明的第1实施方式的引线框的剖视图。
图4是表示以往的实施方式的外部引线和连接杆的截面和连接杆的切断方向的图。
图5是以往的实施方式的连接杆切断后的外部引线的剖视图。
图6是表示本发明的第1实施方式的树脂密封工序结束后的外部引线部的俯视图。
图7是本发明的第1实施方式的搭载有树脂密封装置的上模和下模所挟持的半导体芯片等的引线框的概略图。
图8是从上模侧看到的本发明的第1实施方式的搭载有树脂密封装置的上模和下模所挟持的半导体芯片等的引线框的透视图。
图9是本发明的第1实施方式的树脂密封工序结束后的外部引线间的树脂膜的剖视图。
图10是表示本发明的第1实施方式的外部引线、连接杆的截面和连接杆的切断方向的图。
图11是本发明的第1实施方式的连接杆切断后的外部引线的剖视图。
图12是本发明的第3实施方式的引线框的俯视图。
图13是表示使用了图12的引线框的树脂密封型电子装置的外形的图。
图14是表示本发明的第3实施方式的引线框的冲切方向和芯片电容器的接合面之间的关系的图。
图15是表示本发明的第3实施方式的树脂密封型电子装置和外部电极的连接的图。
具体实施方式
第1实施方式
本发明的第1实施方式是涉及防止如下所述的恶劣影响的发明：覆盖在由冲压加工形成的引线框1的小的引线毛刺10上的镀焊锡层11在切断连接杆9时从该引线毛刺10剥离，成为须状的焊锡毛刺12，外部引线8a等之间产生短路。下面根据图1～图11进行说明。
另外，所使用的引线框1存在多个相同图案只排列成一列的引线框，也存在排列成2列、3列的引线框，为了理解发明，因为对一个图案进行记述就足够，所以对一个图案详细地图示来进行说明。此外，对于封装件，也采用作为简单的封装件的SIP(Single In-line Package)类型，记载一连串的外部引线和连接杆来进行说明。
首先准备引线框1，该引线框1是对Cu材料进行冲压加工而形成的，在其表面被实施有镀Ni层等。接着，如图1所示，在与通过对引线框1进行冲压加工而产生引线毛刺10的面相反的一侧的面的岛13上，采用芯片接合等接合半导体芯片2、半导体芯片3，或根据需要，采用芯片接合等接合芯片电容器4等。半导体芯片2是功率晶体管的情况下，用焊锡糊剂或Ag糊剂将半导体芯片2芯片接合在岛13上，半导体芯片3是耗电少的控制器用半导体芯片的情况下，用Ag糊剂和绝缘糊剂将半导体芯片3芯片接合在岛13上。芯片电容器也用Ag糊剂或焊锡跨在岛13、内部引线8b上地被接合。
接着，用接合线5a通过引线接合将半导体芯片2和半导体芯片3的焊盘电极彼此连接，用接合线5b通过引线接合将半导体芯片3的焊盘电极和引线框1连接。对于其他需要的部分也用接合线6a、6b、6c通过引线接合连接。这种情况下，半导体芯片2是功率元件时，采用Al线(铝线)作为接合线5a等。原因在于，Al线便宜且能在市场购得粗的电线等。半导体芯片2等不是功率元件时，采用Au线，通过热压接法进行引线接合来连接。
接着，半导体芯片2等被树脂密封工序所供给的树脂密封，在图1的点划线所示的内侧形成有充满树脂而成的树脂封装件7。只要表示一部分外部引线8a和连接杆9，就能理解发明的主旨，因此表示以后的工序的附图以简化的图2继续进行说明。另外，所谓连接杆9是指直到树脂密封工序结束支承外部引线8a的、形成引线框1的一部分的构件。在图2中看来，外部引线8a、连接杆9是从正面侧朝着背面侧进行冲压加工而成的，因此在外部引线8a、连接杆9的侧面产生了与背面侧的部分连接较少并突出的引线毛刺10。
图3表示图2的A-A的外部引线8a的剖视图，但不仅表示外部引线8a也表示连接杆9的截面状态。如图3所示，可知引线毛刺10朝向引线框1的背面侧地产生。在该状态下，在镀焊锡工序中进行电镀作业。这种情况下，在外部引线8a和连接杆9的表面形成有镀焊锡层11，同时在引线毛刺10上也形成有镀焊锡层11。
接着，连接杆9被切断，但如以往那样，从作为搭载有半导体芯片2等的一面侧的连接杆9的没有引线毛刺10的一面朝着具有引线毛刺10的一面进行切断的情况下，切断时的切屑对覆盖在引线毛刺10的顶端的镀焊锡层11施力，覆盖在引线毛刺10的顶端的细小的镀焊锡层11剥落，成为须状的焊锡毛刺12，自引线毛刺10垂下。下面根据图4、图5，详细地说明其样态。图4是图2的B-B的概略的剖视图。示出了在外部引线8a和连接杆9的下侧侧面形成有引线毛刺10，在引线毛刺10的表面覆盖有镀焊锡层11。如箭头标记所示，虚线所围着的连接杆9部从图4的上方朝向下方被机械地切断。
这种情况下，被沿箭头标记方向切断的连接杆9部擦着连接杆9和外部引线8a的用点划线所示的边界面，产生切屑，并进行切断。产生的切屑成为较多的量，因此切屑的块对覆盖引线毛刺10顶端的线状的镀焊锡层11施力，强制地从引线毛刺10剥下镀焊锡层11，结果如图5所示，产生从外部引线8a的下侧侧壁垂下的须状的焊锡毛刺12，引起可靠性等问题。
因而，需要采取如下等对策：消灭须状的焊锡毛刺12的产生，或，即使在产生须状的焊锡毛刺12的情况下，减少焊锡毛刺12的数量等或减小其尺寸而不存在实用上的问题。作为减少须状的焊锡毛刺12的数量等来改善实用上的问题的对策，考虑到对连接杆9的切断方法、切断部位进行研究。作为连接杆9的切断部位，考虑在表示树脂密封工序结束后的外部引线8a等的、图6中的点划线所示的A、B、C或D等区域进行切断。
图4、图5所示的是在图6的A区域中仅全部切下连接杆9的切断。另外，为了在图6中便于理解，区域A、B、C仅在一对外部引线8a之间进行了表示，但实际上形成在所有的外部引线8a之间，此外，区域D也以夹着一个连接杆9的状态进行了表示，实际上当然是夹着所有的连接杆9而形成的。
这种情况下，外部引线8a的侧面下部的引线毛刺10和连接杆9的侧面下部的引线毛刺10在外部引线8a和连接杆9交叉的角部9a交叉而构成大的引线毛刺10。这样一来，与不交叉的部分的通常大小的引线毛刺10相比，覆盖在引线毛刺10顶端的不稳定的镀焊锡层11变大。因而，切断连接杆9时所形成的须状的焊锡毛刺12与未交叉的部分相比，也成为大的焊锡毛刺。大的须状的焊锡毛刺12形成在图6所示的4处的交叉部9a。
接着，试着考虑只在图6的区域B所示的连接杆9部分进行切断的情况。这种情况下，在作为连接杆9的侧面的切断部的9b部分所示的4处，从连接杆9的侧面下部的覆盖引线毛刺10顶端的不稳定的镀焊锡层11形成须状的焊锡毛刺12。该部分的引线毛刺10只形成在连接杆9上，因此与在区域A进行切断的情况相比，焊锡毛刺12较小。同样在图6的C区域进行切断的情况下，也在作为外部引线8a的侧面的切断部的9c所示的4处，在外部引线8a的侧面下部形成须状的焊锡毛刺12。该部分的引线毛刺10只形成在外部引线8a的侧面下部，因此焊锡毛刺12的大小也是与在区域B进行切断的情况相同程度的大小。但是，区域B的须状的焊锡毛刺12在切断剩余的连接杆9之间的距离比一对外部引线8a之间的距离短，因此容易引起切断剩余的连接杆9之间的短路。
另外，图6表示存在树脂膜14，但由于存在该树脂膜14，与树脂膜14接触的9a、9b、9c部分的须状焊锡毛刺12的大小小于未与树脂膜14接触的9a，9b、9c部分的须状焊锡毛刺12的大小。在说明该理由之前，概略说明形成树脂膜14的原因。如图7所示，将半导体芯片2等芯片接合在岛13等上并通过接合线5a等接合的引线框1被树脂密封装置的上模100和下模101夹持，连接杆9和引线框1的外框8成为被注入的树脂的限位件，形成注入了树脂的树脂封装件7。
图8表示从上模100侧透视夹持在树脂密封装置内的引线框1的图。点划线所围的区域为树脂封装件7。在图8的左侧，上模100和下模101所夹持的连接杆9作为封挡杆，阻止树脂流到树脂封装件7外。但是，图8中的表示为树脂膜14的部分是不存在引线框1的部分，树脂流入到从树脂封装件7的形成区域端部到作为封挡杆的连接杆9的端部的、上模100和下模101所夹持的区域。结果，如图6和图8所示，形成被一对外部引线8a、封挡件9和树脂封装件7围成的树脂膜14。
图9表示图6的X-X剖视图，表示形成了镀焊锡层11之后的样态。从如上述所形成的样态可知，树脂膜14其截面形状如下所述：上表面处于与相邻的外部引线8a相同的高度，其下表面处于相邻的外部引线8a的引线毛刺10的顶端的位置。因而，引线毛刺10的顶端的单侧以被树脂膜14覆盖的状态而被镀焊锡，因此与表示不存在树脂膜14时的镀焊锡层11的状态的图3的情况相比，如图9所示，引线毛刺10的顶端部难以形成不稳定的镀焊锡层11。
其结果如上所述，与树脂膜14接触的9a、9b、9c部分的须状的焊锡毛刺12的大小小于与图3所示相同地未与树脂膜14接触部分9a、9b、9c部分所形成的须状的焊锡毛刺12。接着，对在图6的区域D切断连接杆9的情况进行考察。这种情况下，切断连接杆9时，其切断面与引线毛刺10交叉的部位只是树脂膜14存在的外部引线8a部分的、9d表示的2处的引线毛刺10。这样一来，通过在区域D切断连接杆9，与在区域A、B、C进行切断的情况相比，能大幅减少自覆盖引线毛刺10顶端的镀焊锡层11产生须状的焊锡毛刺12。
即，通过使连接杆9的切断部位处于哪个区域，都能够减少须状的焊锡毛刺12的产生数量等。在综合判断的情况下，在区域D的切断最有利，其次是在区域C的切断。因而，替代以往的在区域A进行切断，采用在区域C、特别是在区域D进行切断的方法对于减少须状的焊锡毛刺12发挥大的效果。因而，在后述的难以采用本发明的情况下等，采用中策对于减少须状焊锡毛刺12的发生也是有效的对策。
即使在区域D进行切断的情况下，也无法使须状的焊锡毛刺的产生完全消失。在一对外部引线8a、连接杆9和封装树脂7所围着的区域，被不稳定地支承的树脂膜14不知何时就会被剥落，只要树脂膜14被剥落，引线毛刺10的顶端就露出，成为须状的焊锡毛刺12的产生源。特别是，在镀焊锡工序之前采用由高压水等去除树脂膜14的工序的情况下，引线毛刺10露出，镀焊锡层11形成在该引线毛刺10上，因此成为须状的焊锡毛刺12的产生源。
另外，考虑在镀焊锡工序之前进行连接杆9的切断，但以电镀进行镀焊锡的情况下，为了在各外部引线8a处分别形成均匀的镀焊锡层11，优选至少对连接各外部引线8a之间的引线框1的外框8的一部分不切断而加以保留。留下一部分来进行连接杆9的切断，并进行了镀焊锡的情况下，镀焊锡层11也形成在作为外框8的切断面的9e部分产生的引线毛刺10上。因此，镀焊锡结束后，切断该部分而使各外部引线8a分离的情况下，有可能在切断部9e产生须状的焊锡毛刺12，不能解决上述不良情况。
第1实施方式的发明谋求消灭这样的须状的焊锡毛刺12的产生。在本发明中，如图10的箭头标记所示，从引线框1的产生引线毛刺10的一面朝着其相反的一侧的面实施连接杆9部的切断，从而谋求消灭须状的焊锡毛刺12的产生。即，如图10所示，从产生引线毛刺10的一面朝着与其相反的一侧的面进行连接杆9的切断。在这样进行切断的情况下，被切断的连接杆9部也擦着连接杆9和外部引线8a的边界面，产生切屑并进行切断，这点没有变化，产生的切屑成为较多的量也没有变化。
不过，在被切断的连接杆9接触的外部引线8a的最终面，不存在引线毛刺10，也不存在覆盖引线毛刺10顶端的不稳定的镀焊锡层11。取而代之，只存在牢固地覆盖在外部引线8a等上的镀焊锡层11。因而，如图11所示，即使存在切断连接杆9时所存积的较多量的切屑，也不能剥下该牢固地覆盖的镀焊锡层11，不会产生须状的焊锡毛刺12。最后，进行引线弯曲加工等，完成期望的树脂密封型电子装置。
第2实施方式
说明本发明的第2实施方式。这种情况与第1实施方式的不同点仅在于，芯片接合有半导体芯片2等的引线框1的面是由于冲压加工而产生引线毛刺10的面一侧。因而，省略详细的说明。在第2实施方式中，在接合芯片电容器4等情况下，存在引线毛刺10，芯片电容器4的电极面与引线毛刺10的顶端直接接触时，就有可能无法顺利地进行芯片电容器4与引线框1的接合，因此必需注意。原因在于，有时芯片电容器4的2个电极与长度不同的2个引线毛刺10接触，芯片电容器4被倾斜地接合。
另外，在第1实施方式、第2的实施方式中，用SIP型封装件进行了说明，但在DIP(Dual In-line Package)型封装件等其他封装件中，只要发明构思相同，当然能适用。
第3实施方式
接着，参照附图说明本发明的第3实施方式。第3实施方式涉及一种树脂密封型电子装置，该树脂密封型电子装置实现了利用引线框，该引线框用于利用由于存在引线毛刺30所产生的有利的效果，避免引线毛刺30所带来的不利。也使用与第1实施方式同样的附图，但改变附图标记、表现而从不同的方面来进行说明。第3实施方式的树脂密封型电子装置的特征在于，使用了用模具进行冲切而形成的引线框，首先，说明引线框的构造，之后，说明树脂密封型电子装置向外部电极安装的安装构造。
图12是SIP(Single In-line Package)的引线框的俯视图。如图所示，2个岛20、21由从引线框的支承部22延伸的悬吊引线23支承。
此外，6根引线L1～L6沿同一方向从引线框的支承部22延伸。引线L1延伸到接近于岛21的位置，引线L2与岛21连结。引线L3、L4延伸到接近于岛20，21的位置，引线L3、L4的顶端部被连结。引线L5、L6与岛20连接。而且，引线L1～L6由从引线框的支承部22延伸的连接杆(tie bar)24支承。
在岛20的主面上借助导电性糊剂接合有IGBT(InsulatedGate Bipolar Transistor)芯片25。而且，在与岛20相邻的岛21的主面上，借助导电性糊剂接合有用于控制IGBT芯片25的控制IC芯片26。这种情况下，也可以采用P沟道型MOSFET或电力用双极晶体管替代IGBT。然后，在岛21和引线L1上，借助导电性糊剂接合有用于去除控制IC芯片26的噪音的芯片电容器27。芯片电容器27具有2个背面电极，1个背面电极与接合有控制IC芯片26的岛21的主面电连接和机械连接，另1个背面电极与引线L1电连接和机械连接。
芯片电容器27为架在岛21和引线L1之间的姿势，因此在岛21和引线L1之间存在高度差时，芯片电容器27的接合性能变差。因此，为了将岛21和引线L1的主面配置在大致同一个平面上，优选引线L1的端部也由悬吊引线23支承。
并且，为了形成IGBT芯片25、控制IC芯片26之间的必要的电连接，形成有用于引线结合的金属细线。即，在IGBT芯片25的表面形成焊盘P1(源电极)和焊盘P2(栅电极)，在控制IC芯片26的表面形成5个焊盘P3～P7。然后，焊盘P1和焊盘P3由金属细线W1连接，焊盘P2和焊盘P4由金属细线W2连接。焊盘P5和岛21由金属细线W3连接，焊盘P6和引线L3、4的连结部由金属细线W4连接，焊盘P7和引线L1由金属细线W5连接。
形成了上述引线框构造之后，IGBT芯片25、控制IC芯片26及芯片电容器27由铺在图12的点划线所示的区域内的绝缘性树脂所构成的树脂封装件28密封。然后，形成树脂封装件28后，引线框的支承部22被切断，并且引线L1～L6的连接杆24被切断。引线L1～L6的从树脂封装件28被导出的部分成为外部引线。由此，形成如图13所示那样的树脂密封型电子装置200。
接着，在树脂密封型电子装置200中，参照图14说明引线框的冲切方向和用于接合芯片电容器27的接合面的关系。图14是图12中的X-X的剖视图。
如图14的(a)所示，沿图中的箭头标记方向对作为引线框的原材料的金属板进行冲切的情况下，由于模具和金属件的摩擦而在引线L1和岛21的端部上表面形成引线毛刺30。形成有这样的引线毛刺30的面是毛刺形成面31，其相反面是端部带有圆弧的塌角面32。
这种情况下，如图14的(b)所示，芯片电容器27借助Ag糊剂等导电性糊剂33接合在引线L1和岛21的毛刺形成面31上。毛刺形成面31的表面积大于塌角面32的表面积，因此通过将芯片电容器27接合在该毛刺形成面31上、即将毛刺形成面31用作接合面，能较大地获得接合面积，防止芯片电容器27的连接不良。
这种情况下，用于将芯片电容器27接合到引线框上的Ag糊剂等导电性糊剂33优选足够厚，使得芯片电容器27和引线毛刺30不会直接接触。这是为了防止由于搭载有芯片电容器27的2个电极的引线上的、各引线毛刺30的长度之差等而使芯片电容器27倾斜地搭载在引线框上。并且，接合芯片电容器27前，通过平板等押压工具按压毛刺形成面31而使其平坦，预先去除毛刺30，这从提高芯片电容器27的连接性能方面考虑是优选的。
图15是表示上述树脂密封型电子装置200的安装构造的图。如图所示，在汽车的电子控制部中，控制电极40(“外部电极”的一个例子)垂直设置。然后，在该控制电极40的侧面，在焊接部41焊接有被折弯的引线L1(外部引线部)。为了减小焊接部41，该焊接方法优选采用点焊。这种情况下，引线L1的焊接面为上述塌角面32。也就是说，焊接形成有引线毛刺30的毛刺形成面31的背面中部，因此引线毛刺30不会成为点焊的障碍，能够防止引线毛刺30引起的焊接不良。而且，能够提高汽车对于振动的机械强度。
此外，还能得到如下附带效果。即，在树脂密封型电子装置200上刻印编号等的情况下，通常，在作为搭载IGBT芯片25等的面的毛刺形成面31侧的树脂面上进行实施。这样一来，引线L1等被向作为刻印编号等的面的毛刺形成面31侧折弯。因而，在引线L1焊接到垂直设置的控制电极40上的情况下，能够确认处于焊接部的下侧的树脂密封型电子装置200的编号等，并且不会被树脂密封型电子装置200主体妨碍，能可靠地焊接引线L1和控制电极40。焊接后，从上方容易确认树脂密封型电子装置200的编号等。
这样，根据本实施方式，芯片电容器27接合在引线L1的毛刺形成面31上，将引线L1的塌角面32焊接到控制电极40上，因此防止引线L1与控制电极40的焊接不良，并且能较大地确保芯片电容器27与引线L1的接合面积，防止连接不良，作为整体能得到良好的树脂密封型电子装置200的安装构造。
另外，第3实施方式以6个端子的SIP为例进行了说明，本发明也能适用于其他类型的树脂密封型电子装置。此外，芯片电容器17是电子零件的一个例子，只要与引线相接合的零件，也可以是其他类型的电子零件。

Claims (9)

1.一种树脂密封型半导体装置的制造方法，其特征在于，包括：
准备引线框的工序，该引线框具有正面和反面，通过冲压加工而在上述引线框的反面形成有毛刺，在上述引线框的岛上芯片接合有半导体芯片，在自将要形成的树脂封装件向外部延伸出的多个外部引线上一体地形成有连接杆；
将上述半导体芯片和上述引线框电连接的工序；
用树脂对芯片接合有上述半导体芯片的上述引线框进行密封，从而形成上述树脂封装件，并且在由一对的上述外部引线和上述连接杆围成的部分内形成树脂膜的工序；
利用上述冲压加工将露出到上述树脂封装件的外部的连接杆切断的工序，
上述连接杆的切断从冲压加工时的上述引线框的具有毛刺的面朝向与具有毛刺的面相反一侧的面进行，
上述切断位置是比上述外部引线和上述连接杆相交叉的角部靠上述连接杆侧的位置，或者是比上述角部靠上述外部引线侧、且切断上述外部引线的位于包围上述连接杆的区域内的部分的位置。
2.根据权利要求1所述的树脂密封型半导体装置的制造方法，其特征在于，
上述半导体芯片的芯片接合是在冲压加工时的上述引线框的具有毛刺的面上进行的。
3.一种树脂密封型半导体装置，其包括：
固定有半导体芯片的岛；
一端位于上述岛的附近的多条引线；
将上述半导体芯片和上述引线连接的金属细线；
对上述岛、引线和半导体芯片进行密封的树脂封装件，其特征在于，
从上述树脂封装件向外部延伸的外部引线是从用于安装半导体芯片的安装面朝着相反侧的面一侧进行冲切而形成的，在该相反侧的面的一侧具有毛刺，并且被实施有镀焊锡，
从上述封装件向外部延伸的外部引线和保持该外部引线的连接杆的部分具有从上述相反侧的面朝着上述安装面而形成的切断面，
上述切断面的位置是比上述外部引线和上述连接杆相交叉的角部靠上述连接杆侧的位置，或者是比上述角部靠上述外部引线侧、且切断上述外部引线的位于包围上述连接杆的区域内的部分的位置。
4.根据权利要求3所述的树脂密封型半导体装置，其特征在于，
包括：
接合在上述引线上的电子零件；
焊接有上述外部引线的外部电极，
上述引线是用模具对金属板进行冲切而形成的，上述引线的电子零件接合面是由于冲切而形成有毛刺的毛刺形成面，
上述外部引线的焊接面是与上述毛刺形成面相反一侧的面。
5.根据权利要求4所述的树脂密封型半导体装置，其特征在于，
上述毛刺形成面的毛刺被去除。
6.根据权利要求4所述的树脂密封型半导体装置，其特征在于，
上述电子零件是芯片电容器，该芯片电容器的背面端子接合在上述引线的毛刺形成面。
7.根据权利要求5所述的树脂密封型半导体装置，其特征在于，
上述电子零件是芯片电容器，该芯片电容器的背面端子接合在上述引线的毛刺形成面。
8.根据权利要求3所述的树脂密封型半导体装置，其特征在于，包括：
去除上述半导体芯片的噪音用的芯片电容器，其背面端子分别接合在上述引线和上述岛上；
焊接有上述外部引线的外部电极，
上述引线是通过用模具对金属板进行冲切而形成的，上述引线的用于接合芯片电容器的接合面是由于冲切而形成有毛刺的毛刺形成面，
上述外部引线的焊接面是与上述毛刺形成面相反一侧的面。
9.根据权利要求4～8中任一项所述的树脂密封型半导体装置，其特征在于，
上述外部电极是汽车的电子控制部的控制电极。
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