JP2010028109A5 - - Google Patents

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Publication number
JP2010028109A5
JP2010028109A5 JP2009142509A JP2009142509A JP2010028109A5 JP 2010028109 A5 JP2010028109 A5 JP 2010028109A5 JP 2009142509 A JP2009142509 A JP 2009142509A JP 2009142509 A JP2009142509 A JP 2009142509A JP 2010028109 A5 JP2010028109 A5 JP 2010028109A5
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JP
Japan
Prior art keywords
terminal
connection portions
circuit
semiconductor
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009142509A
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English (en)
Japanese (ja)
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JP2010028109A (ja
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Publication date
Application filed filed Critical
Priority to JP2009142509A priority Critical patent/JP2010028109A/ja
Priority claimed from JP2009142509A external-priority patent/JP2010028109A/ja
Publication of JP2010028109A publication Critical patent/JP2010028109A/ja
Publication of JP2010028109A5 publication Critical patent/JP2010028109A5/ja
Withdrawn legal-status Critical Current

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JP2009142509A 2008-06-17 2009-06-15 半導体装置 Withdrawn JP2010028109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009142509A JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008158256 2008-06-17
JP2009142509A JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2010028109A JP2010028109A (ja) 2010-02-04
JP2010028109A5 true JP2010028109A5 (OSRAM) 2012-07-05

Family

ID=41414536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009142509A Withdrawn JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Country Status (4)

Country Link
US (1) US8363365B2 (OSRAM)
JP (1) JP2010028109A (OSRAM)
KR (1) KR101616937B1 (OSRAM)
TW (1) TWI489614B (OSRAM)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010521058A (ja) * 2006-09-24 2010-06-17 ショッキング テクノロジーズ，インコーポレイテッド ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
US8174047B2 (en) 2008-07-10 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5728171B2 (ja) * 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
EP2564482B1 (en) * 2010-04-28 2023-10-25 Littelfuse, Inc. Embedded protection against spurious electrical events
US8637802B2 (en) * 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8698480B2 (en) * 2011-06-27 2014-04-15 Micron Technology, Inc. Reference current distribution
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674352B2 (en) * 2012-02-28 2014-03-18 Texas Instruments Incorporated Overvoltage testing apparatus
EP2925775B1 (en) 2012-11-28 2020-09-16 NGM Biopharmaceuticals, Inc. Compositions and methods for treatment of metabolic disorders and diseases
US9273107B2 (en) 2012-12-27 2016-03-01 Ngm Biopharmaceuticals, Inc. Uses and methods for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
EP2938740B1 (en) 2012-12-27 2022-04-20 NGM Biopharmaceuticals, Inc. Chimeric fgf19 peptides for use in treating bile acid disorders
KR102178945B1 (ko) 2013-10-28 2020-11-13 엔지엠 바이오파마슈티컬스, 아이엔씨. 암 모델 및 관련 방법
US10398758B2 (en) 2014-05-28 2019-09-03 Ngm Biopharmaceuticals, Inc. Compositions comprising variants of FGF19 polypeptides and uses thereof for the treatment of hyperglycemic conditions
US11205669B2 (en) * 2014-06-09 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including photoelectric conversion element
WO2015195509A2 (en) 2014-06-16 2015-12-23 Ngm Biopharmaceuticals, Inc. Methods and uses for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
IL251834B2 (en) 2014-10-23 2023-09-01 Ngm Biopharmaceuticals Inc Pharmaceutical compositions containing peptide variants and methods of using them
US10434144B2 (en) 2014-11-07 2019-10-08 Ngm Biopharmaceuticals, Inc. Methods for treatment of bile acid-related disorders and prediction of clinical sensitivity to treatment of bile acid-related disorders
JP6466220B2 (ja) * 2015-03-24 2019-02-06 ラピスセミコンダクタ株式会社 半導体素子、半導体装置および半導体素子のレイアウト方法
US10677822B2 (en) 2016-09-27 2020-06-09 Analog Devices Global Unlimited Company Electrical overstress detection device
JP2018107161A (ja) * 2016-12-22 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
JP6838240B2 (ja) 2017-01-19 2021-03-03 日立Astemo株式会社 電子装置
US11112436B2 (en) 2018-03-26 2021-09-07 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
KR102632497B1 (ko) * 2018-08-08 2024-02-02 삼성전자주식회사 저항 구조물을 구비하는 반도체 소자
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
JP7099550B2 (ja) * 2018-12-28 2022-07-12 富士電機株式会社 半導体装置および製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157573A (en) 1989-05-12 1992-10-20 Western Digital Corporation ESD protection circuit with segmented buffer transistor
JP2884938B2 (ja) * 1992-09-07 1999-04-19 日本電気株式会社 半導体装置
US5218222A (en) 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
US5477414A (en) 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
JPH0949858A (ja) * 1995-08-07 1997-02-18 Nippon Motorola Ltd 電流検出制御回路及びパターンレイアウト方法
JP3019760B2 (ja) * 1995-11-15 2000-03-13 日本電気株式会社 半導体集積回路装置
JP2826498B2 (ja) * 1996-01-17 1998-11-18 日本電気アイシーマイコンシステム株式会社 半導体装置
JP3033548B2 (ja) * 1997-11-12 2000-04-17 日本電気株式会社 半導体装置、静電保護素子及び絶縁破壊防止方法
JPH11163247A (ja) * 1997-12-01 1999-06-18 Hitachi Ltd 半導体装置およびリードフレーム
KR100294019B1 (ko) * 1998-05-18 2001-07-12 윤종용 반도체칩의정전기보호용트랜지스터
JP3255147B2 (ja) * 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
JP3116916B2 (ja) 1998-08-17 2000-12-11 日本電気株式会社 回路装置、その製造方法
JP3425574B2 (ja) * 1999-07-19 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の入出力保護装置
JP3892736B2 (ja) * 2001-03-29 2007-03-14 株式会社東芝 半導体記憶装置
JP4511803B2 (ja) 2003-04-14 2010-07-28 株式会社半導体エネルギー研究所 Ｄ／ａ変換回路及びそれを内蔵した半導体装置の製造方法
JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP4435672B2 (ja) * 2004-12-01 2010-03-24 パナソニック株式会社 半導体集積回路装置
JP4619318B2 (ja) * 2005-05-23 2011-01-26 株式会社半導体エネルギー研究所 光電変換装置
JP4469319B2 (ja) * 2005-06-17 2010-05-26 シャープ株式会社 半導体記憶装置
JP4995455B2 (ja) * 2005-11-30 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置
DE602007002105D1 (de) 2006-04-28 2009-10-08 Semiconductor Energy Lab Halbleiterbauelement
JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置
US7692999B2 (en) 2006-12-25 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Nonvolatile memory and semiconductor device including nonvolatile memory
JP2008270757A (ja) * 2007-03-26 2008-11-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP5215580B2 (ja) * 2007-03-28 2013-06-19 三菱重工業株式会社 人工心臓ポンプ
US7960772B2 (en) * 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP5388632B2 (ja) * 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8174047B2 (en) * 2008-07-10 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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