JP2010016409A5 - - Google Patents

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Publication number
JP2010016409A5
JP2010016409A5 JP2009240595A JP2009240595A JP2010016409A5 JP 2010016409 A5 JP2010016409 A5 JP 2010016409A5 JP 2009240595 A JP2009240595 A JP 2009240595A JP 2009240595 A JP2009240595 A JP 2009240595A JP 2010016409 A5 JP2010016409 A5 JP 2010016409A5
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JP
Japan
Prior art keywords
light emitting
emitting diode
nitride
platinum
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009240595A
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English (en)
Japanese (ja)
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JP2010016409A (ja
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Publication date
Priority claimed from US10/145,222 external-priority patent/US6825501B2/en
Application filed filed Critical
Publication of JP2010016409A publication Critical patent/JP2010016409A/ja
Publication of JP2010016409A5 publication Critical patent/JP2010016409A5/ja
Pending legal-status Critical Current

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JP2009240595A 2002-05-14 2009-10-19 標準パッケージで使用される信頼性が高い強固なｉｉｉ族発光ダイオード Pending JP2010016409A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/145,222 US6825501B2 (en) 1997-08-29 2002-05-14 Robust Group III light emitting diode for high reliability in standard packaging applications

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004506104A Division JP2005526403A (ja) 2002-05-14 2003-05-14 標準パッケージで使用される信頼性が高い強固なｉｉｉ族発光ダイオード

Publications (2)

Publication Number Publication Date
JP2010016409A JP2010016409A (ja) 2010-01-21
JP2010016409A5 true JP2010016409A5 (enExample) 2012-02-02

Family

ID=29548262

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004506104A Pending JP2005526403A (ja) 2002-05-14 2003-05-14 標準パッケージで使用される信頼性が高い強固なｉｉｉ族発光ダイオード
JP2009240595A Pending JP2010016409A (ja) 2002-05-14 2009-10-19 標準パッケージで使用される信頼性が高い強固なｉｉｉ族発光ダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2004506104A Pending JP2005526403A (ja) 2002-05-14 2003-05-14 標準パッケージで使用される信頼性が高い強固なｉｉｉ族発光ダイオード

Country Status (11)

Country Link
US (3) US6825501B2 (enExample)
EP (2) EP1509956B1 (enExample)
JP (2) JP2005526403A (enExample)
KR (1) KR20050005479A (enExample)
CN (1) CN100407449C (enExample)
AT (1) ATE451722T1 (enExample)
AU (1) AU2003237835A1 (enExample)
CA (1) CA2485640A1 (enExample)
DE (1) DE60330452D1 (enExample)
TW (1) TWI253185B (enExample)
WO (1) WO2003098712A2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
DE10203809B4 (de) * 2002-01-31 2010-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
AU2003301057A1 (en) * 2002-12-20 2004-07-22 Cree, Inc. Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP2006004907A (ja) 2004-05-18 2006-01-05 Seiko Epson Corp エレクトロルミネッセンス装置及び電子機器
US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7482634B2 (en) * 2004-09-24 2009-01-27 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US20060267043A1 (en) 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7575810B2 (en) * 2005-09-23 2009-08-18 Hewlett-Packard Development Company, L.P. Reflector with non-uniform metal oxide layer surface
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US8936702B2 (en) * 2006-03-07 2015-01-20 Micron Technology, Inc. System and method for sputtering a tensile silicon nitride film
BRPI0712439B1 (pt) 2006-05-31 2019-11-05 Cree, Inc. dispositivo de iluminação e método de iluminação
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8096671B1 (en) 2009-04-06 2012-01-17 Nmera, Llc Light emitting diode illumination system
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US9991427B2 (en) * 2010-03-08 2018-06-05 Cree, Inc. Photonic crystal phosphor light conversion structures for light emitting devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
CN104979446A (zh) * 2015-05-26 2015-10-14 江苏新广联科技股份有限公司 SiC衬底GaN基紫外LED外延片、SiC衬底GaN基紫外LED器件及制备方法
WO2019089697A1 (en) * 2017-11-01 2019-05-09 The Regents Of The University Of California Reduction in leakage current and increase in efficiency of iii-nitride leds by sidewall passivation using atomic layer deposition
CN113412341B (zh) 2019-02-11 2024-11-01 应用材料公司 在脉冲式pvd中通过等离子体改性从晶片移除颗粒的方法
CN110400858A (zh) * 2019-06-25 2019-11-01 湖南红太阳光电科技有限公司 一种hjt电池双层透明导电氧化物薄膜的制备方法
CN118538843B (zh) * 2024-07-26 2024-09-27 江西兆驰半导体有限公司 一种发光二极管的外延片及其制备方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894703A (en) * 1982-03-19 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Restricted contact, planar photodiode
US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
JPS6294943A (ja) * 1985-10-21 1987-05-01 Nec Corp 薄膜製造方法
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0685448B2 (ja) * 1988-03-07 1994-10-26 三菱化成株式会社 化合物半導体装置
JPH0268968A (ja) 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
US5077587A (en) * 1990-10-09 1991-12-31 Eastman Kodak Company Light-emitting diode with anti-reflection layer optimization
JP3152474B2 (ja) * 1991-01-29 2001-04-03 三洋電機株式会社 発光ダイオ−ド
US5214306A (en) 1991-01-29 1993-05-25 Sanyo Electric Co., Ltd. Light emitting diode
US6344663B1 (en) * 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
GB2277405A (en) 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
DE69425186T3 (de) 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
TW384515B (en) * 1993-07-14 2000-03-11 Frontec Inc Electronic device and its manufacturing method
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5567523A (en) * 1994-10-19 1996-10-22 Kobe Steel Research Laboratories, Usa, Applied Electronics Center Magnetic recording medium comprising a carbon substrate, a silicon or aluminum nitride sub layer, and a barium hexaferrite magnetic layer
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5661074A (en) 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
KR100326101B1 (ko) * 1995-08-31 2002-10-09 가부시끼가이샤 도시바 반도체장치의제조방법및질화갈륨계반도체의성장방법
JP2877063B2 (ja) 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5812105A (en) 1996-06-10 1998-09-22 Cree Research, Inc. Led dot matrix drive method and apparatus
JP3209096B2 (ja) * 1996-05-21 2001-09-17 豊田合成株式会社 ３族窒化物化合物半導体発光素子
US5708280A (en) 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
US5813752A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
CA2299379C (en) * 1997-08-29 2006-05-30 Cree, Inc. Robust group iii nitride light emitting diode for high reliability in standard applications
JPH11312824A (ja) * 1998-04-27 1999-11-09 Kyocera Corp 半導体発光装置
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3833848B2 (ja) 1999-05-10 2006-10-18 パイオニア株式会社 ３族窒化物半導体素子製造方法
US6524971B1 (en) * 1999-12-17 2003-02-25 Agere Systems, Inc. Method of deposition of films
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6445007B1 (en) * 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area

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