JP2010016409A - 標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード - Google Patents
標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード Download PDFInfo
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- JP2010016409A JP2010016409A JP2009240595A JP2009240595A JP2010016409A JP 2010016409 A JP2010016409 A JP 2010016409A JP 2009240595 A JP2009240595 A JP 2009240595A JP 2009240595 A JP2009240595 A JP 2009240595A JP 2010016409 A JP2010016409 A JP 2010016409A
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 23
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000001429 visible spectrum Methods 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 11
- 238000006731 degradation reaction Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】標準パッケージ中において高い信頼性を提供し且つ高温と高湿度の条件に耐える物理的に強固な発光ダイオードを開示する。前記ダイオードは、p型III族窒化物コンタクト層を有するIII族ヘテロ接合ダイオード、前記p型コンタクト層に対するオーミックコンタクト、及び前記オーミックコンタクト上に存在するスパッタ堆積された窒化珪素組成物パッシベーション層を有するダイオードを含む。発光ダイオードを製造する方法及び前記ダイオードを組み込んでいるLEDランプも開示する。
【選択図】図3
Description
本発明は、発光ダイオードに関するものであり、詳しくは、標準パッケージで使用するのに好適なIII族窒化物から形成された発光ダイオードに関するものである。
発光ダイオードは、電気エネルギーを光放射に変換するp−n接合デバイスである。特に、適当な順方向バイアス条件下では、LEDは、電磁スペクトルの紫外、可視、及び赤外の領域で外部自然放射を放出する。
その結果、SiC基板上のIII族窒化物デバイスは、典型的には、n型基板、n型緩衝層(又は複数の層の組合せ)、n型エピタキシャル層、及び上記デバイスの「頂部」上のp型コンタクト層(例えば、GaN)を含む。
based III−V group compound semiconductor device and method of producing the same”において、中村らは、「(p型窒化ガリウムに対する)p型電極は、任意の適当な金
属材料から形成できる」(6頁7行目)ことを報告している。また中村は、8種類の候補金属(Au,Ni,Pt,Al,Sn,In,Cr,及びTi)を挙げ、好ましい選択としてニッケルと金の組合せ(6頁、10−12及び33−35行目)を挙げている。更に、パッシベーション層(「保護フイルム」)を選択する場合、中村は、いくつかの単なる一般的な基準を提供している(「保護フイルムを形成する材料は、それが透明であり、且つ電気的に絶縁性である限り特に限定されない」9頁31−32行目)。また、中村は4種類の候補材料:即ち、二酸化珪素(SiO2)、酸化チタン(TiO)、酸化アルミニウム(Al2O3)、及び窒化珪素(Si3N4)を挙げている。
従って、通常の方法でパッケージすることができ、そして更に、広範で様々な商業用途でデバイスを有用なものにするほど充分な時間、常温と高温の両方及び高湿度の条件に申し分無く耐える強固なLEDに関するニーズが存在し続けている。
本発明の態様は、p型III族窒化物(好ましくは窒化ガリウム)コンタクト層を有するIII族ヘテロ接合ダイオード、前記p型コンタクト層に対するオーミックコンタクト、及び前記オーミックコンタクト上に存在するスパッタ堆積された窒化珪素パッシベーション層を有するダイオードを含む。
別の態様では、本発明は:基板上に緩衝層を形成する工程、該緩衝層上に活性領域を形成する工程、該活性領域上にp型コンタクト層を形成する工程、該コンタクト層上に金属コンタクトを形成する工程、及び該コンタクト層上に窒化珪素パッシベーション層をスパッタ堆積させる工程を含む、LEDを製造する方法を含む。
本発明は、標準パッケージ中において高い信頼性を提供し且つ高温と高湿度の条件に耐える物理的に強固な発光ダイオードである。
ode”という名称で1998年9月16日に出願された、同時係属の且つ共通に譲渡された米国特許出願第09/154,363号で開示されている。
rr)未満、好ましくは約10〜20mTorrに維持すべきである。スパッタ速度は約45Å/分に維持すべきであり、また、最適な封入のためにはフィルム全体の厚さが約1000Åを超えるように堆積させるべきである。この態様では、窒化珪素のスパッタリングは、Sputtered Films,Inc.によって製造されたEndeavorスパッタシステムを用いて達成できる。本発明者は、いかなる特定の理論によっても束縛されたくないが、この圧力では(20mTorr以下)、スパッタ法によって、実質的なイオン衝撃損傷がデバイスで引き起こされると現在考えられているが、スパッタ温度を上昇させると、イオン衝撃損傷がアニールされて、デバイスから前記損傷が除去されるとも考えられている。
入が防止されるので、スパッタされた窒化珪素組成物は、従来のプラズマ増速化学気相堆積(PECVD)法に比べて好ましい。当業者には公知のように、水素は、GaN系半導体において、Mg受容体を不動態化することができる。正確なメカニズムは完全には理解されておらず、また、本発明者はいかなる特定の運転理論によっても束縛されたくないが、現在のところでは、窒化珪素を、200℃を超える堆積温度でPECVDによって堆積させると、フィルム中の水素が、薄いオーミックコンタクトを通ってp型III族窒化物コンタクト層14中に拡散して、層14の表面に近い領域を不動態化させると理解されている。すなわち、表面近傍の領域では、実質的な数の受容体イオンは、フィルム中水素の導入によって中性に変わる。而して、オーミックコンタクトと窒素材料との界面は劣化し、コンタクト金属は理想的なオーム特性を示さない。それにより、デバイスにおいて順電圧が増加(VF劣化)することがある。実質的に、デバイスは、あたかも金属16とコンタクト層14との界面がオーミックコンタクトの代わりにショットキーコンタクトを形成するかのように挙動する。
間アニールした後で、平均VFの増加は0.1Vをほんの少し超え、一方、窒化珪素組成物をスパッタ堆積させたLEDでは、VFがわずかに低下した(すなわち、改善)。PECVDを用いて窒化珪素を堆積させたLEDでは、290℃で5分間アニールした後で、平均VFの増加は0.7Vを超え、一方、窒化珪素組成物をスパッタ堆積させたLEDでは、290℃で5分間アニールした後で、VFは殆ど0.1V低下した。
Claims (12)
- 単一へテロ構造、二重ヘテロ構造、単一量子井戸及び多重量子井戸から成る群より選択されるIII族窒化物活性領域;
該活性領域上のp型III族窒化物コンタクト層;
該p型コンタクト層上の半透明の金属コンタクト;及び
該金属コンタクト上の不定比の窒化珪素組成物からなるパッシベーション層
を含む縦型発光ダイオード。 - 該窒化珪素組成物が、珪素欠乏である請求項1記載の発光ダイオード。
- 該p型III族窒化物コンタクト層が窒化ガリウムを含む請求項1記載の発光ダイオード。
- 該パッシベーション層が、約1000Åの厚さを有する請求項2記載の発光ダイオード。
- 該基板がn型であり、且つ該基板に対する該オーミックコンタクトがニッケルである請求項1記載の発光ダイオード。
- 該金属コンタクト及び該パッシベーション層が、実質的に互いに非反応性であって且つ互いに充分に接着している請求項1記載の発光ダイオード。
- 該金属コンタクトが、白金、パラジウム、金、チタンと金の組合せ、白金と金の組合せ、チタンと白金と金の組合せ、及び白金と酸化インジウム錫の組合せから成る群より選択される請求項1記載の発光ダイオード。
- 該金属コンタクトが、白金を含む請求項1記載の発光ダイオード。
- 請求項1記載の発光ダイオードを複数組み込んでいる表示装置。
- 可視スペクトルの青色部分で発光する請求項1記載の発光ダイオード;
赤色発光ダイオード;及び
緑色発光ダイオード
を含むピクセル。 - プラスチックレンズと;
該活性領域が、p型III族窒化物コンタクト層を有するIII族窒化物ヘテロ接合ダイオードを含む請求項1記載の発光ダイオードと
を含むLEDランプ。 - 該III族窒化物コンタクト層が、窒化ガリウムを含む請求項11記載のLEDランプ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/145,222 US6825501B2 (en) | 1997-08-29 | 2002-05-14 | Robust Group III light emitting diode for high reliability in standard packaging applications |
Related Parent Applications (1)
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JP2004506104A Division JP2005526403A (ja) | 2002-05-14 | 2003-05-14 | 標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード |
Publications (2)
Publication Number | Publication Date |
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JP2010016409A true JP2010016409A (ja) | 2010-01-21 |
JP2010016409A5 JP2010016409A5 (ja) | 2012-02-02 |
Family
ID=29548262
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Application Number | Title | Priority Date | Filing Date |
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JP2004506104A Pending JP2005526403A (ja) | 2002-05-14 | 2003-05-14 | 標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード |
JP2009240595A Pending JP2010016409A (ja) | 2002-05-14 | 2009-10-19 | 標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード |
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JP2004506104A Pending JP2005526403A (ja) | 2002-05-14 | 2003-05-14 | 標準パッケージで使用される信頼性が高い強固なiii族発光ダイオード |
Country Status (11)
Country | Link |
---|---|
US (3) | US6825501B2 (ja) |
EP (2) | EP2144307B1 (ja) |
JP (2) | JP2005526403A (ja) |
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Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825501B2 (en) * | 1997-08-29 | 2004-11-30 | Cree, Inc. | Robust Group III light emitting diode for high reliability in standard packaging applications |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
DE10203809B4 (de) * | 2002-01-31 | 2010-05-27 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
WO2004059751A2 (en) * | 2002-12-20 | 2004-07-15 | Cree, Inc. | Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices |
KR101034055B1 (ko) * | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
JP2005286135A (ja) * | 2004-03-30 | 2005-10-13 | Eudyna Devices Inc | 半導体装置および半導体装置の製造方法 |
JP2006004907A (ja) * | 2004-05-18 | 2006-01-05 | Seiko Epson Corp | エレクトロルミネッセンス装置及び電子機器 |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US7737459B2 (en) | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7482634B2 (en) * | 2004-09-24 | 2009-01-27 | Lockheed Martin Corporation | Monolithic array for solid state ultraviolet light emitters |
JP4973189B2 (ja) * | 2004-10-19 | 2012-07-11 | 日亜化学工業株式会社 | 半導体素子 |
US7432536B2 (en) * | 2004-11-04 | 2008-10-07 | Cree, Inc. | LED with self aligned bond pad |
US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
US20060267043A1 (en) | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7575810B2 (en) * | 2005-09-23 | 2009-08-18 | Hewlett-Packard Development Company, L.P. | Reflector with non-uniform metal oxide layer surface |
WO2007081719A2 (en) | 2006-01-05 | 2007-07-19 | Illumitex, Inc. | Separate optical device for directing light from an led |
US8101961B2 (en) * | 2006-01-25 | 2012-01-24 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with growth substrates |
US8936702B2 (en) * | 2006-03-07 | 2015-01-20 | Micron Technology, Inc. | System and method for sputtering a tensile silicon nitride film |
CN101589268A (zh) | 2006-05-31 | 2009-11-25 | 科锐Led照明科技公司 | 照明装置和照明方法 |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
US20080283864A1 (en) * | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US9991427B2 (en) * | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
CN104979446A (zh) * | 2015-05-26 | 2015-10-14 | 江苏新广联科技股份有限公司 | SiC衬底GaN基紫外LED外延片、SiC衬底GaN基紫外LED器件及制备方法 |
US20210193871A1 (en) * | 2017-11-01 | 2021-06-24 | The Regents Of The University Of California | Reduction in leakage current and increase in efficiency of iii-nitride leds by sidewall passivation using atomic layer deposition |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226181A (ja) * | 1988-03-07 | 1989-09-08 | Mitsubishi Monsanto Chem Co | 化合物半導体装置 |
WO1996024167A1 (en) * | 1995-02-03 | 1996-08-08 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum, and method of making the same |
JPH11312824A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 半導体発光装置 |
JP2001514451A (ja) * | 1997-08-29 | 2001-09-11 | クリー インコーポレイテッド | 標準パッケージで使用される信頼性が高い強固な第iii族発光ダイオード |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4894703A (en) * | 1982-03-19 | 1990-01-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Restricted contact, planar photodiode |
US4860069A (en) * | 1983-09-24 | 1989-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-cry stal semiconductor light emitting device |
JPS6294943A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 薄膜製造方法 |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
JPH0268968A (ja) * | 1988-09-02 | 1990-03-08 | Sharp Corp | 化合物半導体発光素子 |
JP2953468B2 (ja) * | 1989-06-21 | 1999-09-27 | 三菱化学株式会社 | 化合物半導体装置及びその表面処理加工方法 |
US5077587A (en) * | 1990-10-09 | 1991-12-31 | Eastman Kodak Company | Light-emitting diode with anti-reflection layer optimization |
US5214306A (en) * | 1991-01-29 | 1993-05-25 | Sanyo Electric Co., Ltd. | Light emitting diode |
JP3152474B2 (ja) * | 1991-01-29 | 2001-04-03 | 三洋電機株式会社 | 発光ダイオ−ド |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JP2770717B2 (ja) * | 1993-09-21 | 1998-07-02 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
GB2277405A (en) | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
EP1450415A3 (en) | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
TW384515B (en) * | 1993-07-14 | 2000-03-11 | Frontec Inc | Electronic device and its manufacturing method |
US5404282A (en) * | 1993-09-17 | 1995-04-04 | Hewlett-Packard Company | Multiple light emitting diode module |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07326823A (ja) * | 1994-05-30 | 1995-12-12 | Canon Inc | 光半導体素子及びその製造方法 |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5592501A (en) | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
US5567523A (en) * | 1994-10-19 | 1996-10-22 | Kobe Steel Research Laboratories, Usa, Applied Electronics Center | Magnetic recording medium comprising a carbon substrate, a silicon or aluminum nitride sub layer, and a barium hexaferrite magnetic layer |
US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
GB2310083B (en) * | 1995-08-31 | 1999-07-28 | Toshiba Kk | Blue light emitting element and method of manufacturing same |
US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
JP2877063B2 (ja) | 1995-11-06 | 1999-03-31 | 松下電器産業株式会社 | 半導体発光素子 |
US5812105A (en) | 1996-06-10 | 1998-09-22 | Cree Research, Inc. | Led dot matrix drive method and apparatus |
JP3209096B2 (ja) * | 1996-05-21 | 2001-09-17 | 豊田合成株式会社 | 3族窒化物化合物半導体発光素子 |
US5708280A (en) | 1996-06-21 | 1998-01-13 | Motorola | Integrated electro-optical package and method of fabrication |
US5668049A (en) * | 1996-07-31 | 1997-09-16 | Lucent Technologies Inc. | Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur |
US5813752A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters |
US6825501B2 (en) * | 1997-08-29 | 2004-11-30 | Cree, Inc. | Robust Group III light emitting diode for high reliability in standard packaging applications |
US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
JP3833848B2 (ja) | 1999-05-10 | 2006-10-18 | パイオニア株式会社 | 3族窒化物半導体素子製造方法 |
US6524971B1 (en) * | 1999-12-17 | 2003-02-25 | Agere Systems, Inc. | Method of deposition of films |
US6586781B2 (en) * | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
JP4810746B2 (ja) * | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
EP1278249B8 (en) | 2000-03-31 | 2013-11-27 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
US6445007B1 (en) * | 2001-03-19 | 2002-09-03 | Uni Light Technology Inc. | Light emitting diodes with spreading and improving light emitting area |
-
2002
- 2002-05-14 US US10/145,222 patent/US6825501B2/en not_active Expired - Lifetime
-
2003
- 2003-05-14 DE DE60330452T patent/DE60330452D1/de not_active Expired - Lifetime
- 2003-05-14 JP JP2004506104A patent/JP2005526403A/ja active Pending
- 2003-05-14 KR KR10-2004-7018346A patent/KR20050005479A/ko not_active Application Discontinuation
- 2003-05-14 EP EP09173624.9A patent/EP2144307B1/en not_active Expired - Lifetime
- 2003-05-14 TW TW092113084A patent/TWI253185B/zh not_active IP Right Cessation
- 2003-05-14 AU AU2003237835A patent/AU2003237835A1/en not_active Abandoned
- 2003-05-14 EP EP03736594A patent/EP1509956B1/en not_active Expired - Lifetime
- 2003-05-14 AT AT03736594T patent/ATE451722T1/de not_active IP Right Cessation
- 2003-05-14 CA CA002485640A patent/CA2485640A1/en not_active Abandoned
- 2003-05-14 CN CN038107384A patent/CN100407449C/zh not_active Expired - Lifetime
- 2003-05-14 WO PCT/US2003/014990 patent/WO2003098712A2/en active Application Filing
-
2004
- 2004-11-08 US US10/983,983 patent/US7125737B2/en not_active Expired - Fee Related
-
2006
- 2006-10-06 US US11/539,423 patent/US7473938B2/en not_active Expired - Fee Related
-
2009
- 2009-10-19 JP JP2009240595A patent/JP2010016409A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226181A (ja) * | 1988-03-07 | 1989-09-08 | Mitsubishi Monsanto Chem Co | 化合物半導体装置 |
WO1996024167A1 (en) * | 1995-02-03 | 1996-08-08 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum, and method of making the same |
JP2001514451A (ja) * | 1997-08-29 | 2001-09-11 | クリー インコーポレイテッド | 標準パッケージで使用される信頼性が高い強固な第iii族発光ダイオード |
JPH11312824A (ja) * | 1998-04-27 | 1999-11-09 | Kyocera Corp | 半導体発光装置 |
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EP1509956B1 (en) | 2009-12-09 |
US20030025121A1 (en) | 2003-02-06 |
AU2003237835A1 (en) | 2003-12-02 |
EP2144307A3 (en) | 2015-04-15 |
CN1653625A (zh) | 2005-08-10 |
US20070085104A1 (en) | 2007-04-19 |
EP1509956A2 (en) | 2005-03-02 |
DE60330452D1 (de) | 2010-01-21 |
ATE451722T1 (de) | 2009-12-15 |
KR20050005479A (ko) | 2005-01-13 |
EP2144307B1 (en) | 2018-10-03 |
US20030201453A2 (en) | 2003-10-30 |
US7125737B2 (en) | 2006-10-24 |
CA2485640A1 (en) | 2003-11-27 |
WO2003098712A2 (en) | 2003-11-27 |
CN100407449C (zh) | 2008-07-30 |
TW200408146A (en) | 2004-05-16 |
TWI253185B (en) | 2006-04-11 |
JP2005526403A (ja) | 2005-09-02 |
WO2003098712A3 (en) | 2004-06-10 |
US20050095737A1 (en) | 2005-05-05 |
US6825501B2 (en) | 2004-11-30 |
EP2144307A2 (en) | 2010-01-13 |
US7473938B2 (en) | 2009-01-06 |
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