DE60330452D1 - Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii - Google Patents

Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Info

Publication number
DE60330452D1
DE60330452D1 DE60330452T DE60330452T DE60330452D1 DE 60330452 D1 DE60330452 D1 DE 60330452D1 DE 60330452 T DE60330452 T DE 60330452T DE 60330452 T DE60330452 T DE 60330452T DE 60330452 D1 DE60330452 D1 DE 60330452D1
Authority
DE
Germany
Prior art keywords
light
emitting diode
contact
producing
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60330452T
Other languages
English (en)
Inventor
John Adam Edmond
Brian Thibeaut
David Beardsley Slater Jr
Gerald H Negley
Van Allen Mieczkowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60330452D1 publication Critical patent/DE60330452D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
DE60330452T 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii Expired - Lifetime DE60330452D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/145,222 US6825501B2 (en) 1997-08-29 2002-05-14 Robust Group III light emitting diode for high reliability in standard packaging applications
PCT/US2003/014990 WO2003098712A2 (en) 2002-05-14 2003-05-14 High-reliability group iii-nitride light emitting diode

Publications (1)

Publication Number Publication Date
DE60330452D1 true DE60330452D1 (de) 2010-01-21

Family

ID=29548262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60330452T Expired - Lifetime DE60330452D1 (de) 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Country Status (11)

Country Link
US (3) US6825501B2 (de)
EP (2) EP1509956B1 (de)
JP (2) JP2005526403A (de)
KR (1) KR20050005479A (de)
CN (1) CN100407449C (de)
AT (1) ATE451722T1 (de)
AU (1) AU2003237835A1 (de)
CA (1) CA2485640A1 (de)
DE (1) DE60330452D1 (de)
TW (1) TWI253185B (de)
WO (1) WO2003098712A2 (de)

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DE10203809B4 (de) * 2002-01-31 2010-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
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WO2004059706A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
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US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7482634B2 (en) * 2004-09-24 2009-01-27 Lockheed Martin Corporation Monolithic array for solid state ultraviolet light emitters
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US7432536B2 (en) 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US20060267043A1 (en) 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
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US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
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US8096671B1 (en) 2009-04-06 2012-01-17 Nmera, Llc Light emitting diode illumination system
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9991427B2 (en) * 2010-03-08 2018-06-05 Cree, Inc. Photonic crystal phosphor light conversion structures for light emitting devices
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
CN104979446A (zh) * 2015-05-26 2015-10-14 江苏新广联科技股份有限公司 SiC衬底GaN基紫外LED外延片、SiC衬底GaN基紫外LED器件及制备方法
US20210193871A1 (en) * 2017-11-01 2021-06-24 The Regents Of The University Of California Reduction in leakage current and increase in efficiency of iii-nitride leds by sidewall passivation using atomic layer deposition
US11473189B2 (en) * 2019-02-11 2022-10-18 Applied Materials, Inc. Method for particle removal from wafers through plasma modification in pulsed PVD
CN110400858A (zh) * 2019-06-25 2019-11-01 湖南红太阳光电科技有限公司 一种hjt电池双层透明导电氧化物薄膜的制备方法

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Also Published As

Publication number Publication date
US6825501B2 (en) 2004-11-30
US20050095737A1 (en) 2005-05-05
AU2003237835A1 (en) 2003-12-02
US20030201453A2 (en) 2003-10-30
CA2485640A1 (en) 2003-11-27
EP2144307A2 (de) 2010-01-13
EP1509956A2 (de) 2005-03-02
CN100407449C (zh) 2008-07-30
US7125737B2 (en) 2006-10-24
KR20050005479A (ko) 2005-01-13
JP2005526403A (ja) 2005-09-02
ATE451722T1 (de) 2009-12-15
US20070085104A1 (en) 2007-04-19
CN1653625A (zh) 2005-08-10
US7473938B2 (en) 2009-01-06
EP2144307A3 (de) 2015-04-15
EP1509956B1 (de) 2009-12-09
EP2144307B1 (de) 2018-10-03
US20030025121A1 (en) 2003-02-06
JP2010016409A (ja) 2010-01-21
WO2003098712A3 (en) 2004-06-10
TW200408146A (en) 2004-05-16
WO2003098712A2 (en) 2003-11-27
TWI253185B (en) 2006-04-11

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