JP2009239294A5 - - Google Patents

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Publication number
JP2009239294A5
JP2009239294A5 JP2009125100A JP2009125100A JP2009239294A5 JP 2009239294 A5 JP2009239294 A5 JP 2009239294A5 JP 2009125100 A JP2009125100 A JP 2009125100A JP 2009125100 A JP2009125100 A JP 2009125100A JP 2009239294 A5 JP2009239294 A5 JP 2009239294A5
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JP
Japan
Prior art keywords
emitting diode
light emitting
light
contact
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009125100A
Other languages
English (en)
Japanese (ja)
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JP2009239294A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2009239294A publication Critical patent/JP2009239294A/ja
Publication of JP2009239294A5 publication Critical patent/JP2009239294A5/ja
Ceased legal-status Critical Current

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JP2009125100A 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード Ceased JP2009239294A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000508147A Division JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Publications (2)

Publication Number Publication Date
JP2009239294A JP2009239294A (ja) 2009-10-15
JP2009239294A5 true JP2009239294A5 (enExample) 2011-02-24

Family

ID=25443701

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000508147A Expired - Lifetime JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード
JP2009125100A Ceased JP2009239294A (ja) 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000508147A Expired - Lifetime JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Country Status (11)

Country Link
US (1) US6946682B2 (enExample)
EP (1) EP1018169B1 (enExample)
JP (2) JP4597363B2 (enExample)
KR (1) KR100651145B1 (enExample)
CN (1) CN1129192C (enExample)
AT (1) ATE279789T1 (enExample)
AU (1) AU9295098A (enExample)
CA (1) CA2299379C (enExample)
DE (1) DE69827025T2 (enExample)
ES (1) ES2226169T3 (enExample)
WO (1) WO1999010936A2 (enExample)

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DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
CA2299379C (en) * 1997-08-29 2006-05-30 Cree, Inc. Robust group iii nitride light emitting diode for high reliability in standard applications
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
AU2003301057A1 (en) * 2002-12-20 2004-07-22 Cree, Inc. Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
US20070241352A1 (en) * 2004-06-18 2007-10-18 Showa Denko K. K. Group III Nitride Semiconductor Light Emitting Device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

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US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH04264781A (ja) 1991-02-20 1992-09-21 Eastman Kodak Japan Kk 発光ダイオードアレイ
JPH04365382A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体発光装置及びその駆動方法
JP2560963B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
CA2299379C (en) * 1997-08-29 2006-05-30 Cree, Inc. Robust group iii nitride light emitting diode for high reliability in standard applications

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