ATE279789T1 - Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen - Google Patents

Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen

Info

Publication number
ATE279789T1
ATE279789T1 AT98945787T AT98945787T ATE279789T1 AT E279789 T1 ATE279789 T1 AT E279789T1 AT 98945787 T AT98945787 T AT 98945787T AT 98945787 T AT98945787 T AT 98945787T AT E279789 T1 ATE279789 T1 AT E279789T1
Authority
AT
Austria
Prior art keywords
group iii
diode
light emitting
emitting diode
high reliability
Prior art date
Application number
AT98945787T
Other languages
German (de)
English (en)
Inventor
David B Slater Jr
Gerald H Negley
John Adam Edmond
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE279789T1 publication Critical patent/ATE279789T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
AT98945787T 1997-08-29 1998-08-28 Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen ATE279789T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29
PCT/US1998/017849 WO1999010936A2 (en) 1997-08-29 1998-08-28 Robust group iii nitride light emitting diode for high reliability in standard applications

Publications (1)

Publication Number Publication Date
ATE279789T1 true ATE279789T1 (de) 2004-10-15

Family

ID=25443701

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98945787T ATE279789T1 (de) 1997-08-29 1998-08-28 Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen

Country Status (11)

Country Link
US (1) US6946682B2 (enExample)
EP (1) EP1018169B1 (enExample)
JP (2) JP4597363B2 (enExample)
KR (1) KR100651145B1 (enExample)
CN (1) CN1129192C (enExample)
AT (1) ATE279789T1 (enExample)
AU (1) AU9295098A (enExample)
CA (1) CA2299379C (enExample)
DE (1) DE69827025T2 (enExample)
ES (1) ES2226169T3 (enExample)
WO (1) WO1999010936A2 (enExample)

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AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
ATE279789T1 (de) * 1997-08-29 2004-10-15 Cree Inc Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
JP4866550B2 (ja) * 2002-12-20 2012-02-01 クリー インコーポレイテッド 自己整合型の半導体メサおよびコンタクト層を有する半導体デバイス、および、該デバイスに関連する構造の形成方法
TWI269466B (en) * 2004-06-18 2006-12-21 Showa Denko Kk Group III nitride semiconductor light emitting device
US7432536B2 (en) 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8101961B2 (en) 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
JP2010506402A (ja) 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
WO2013184654A1 (en) 2012-06-04 2013-12-12 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9312448B2 (en) * 2012-07-12 2016-04-12 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
WO2022119567A1 (en) * 2020-12-02 2022-06-09 Sonogen Medical, Inc. Acoustical applications of modulation beamforming technology
US12604571B2 (en) 2021-10-07 2026-04-14 Samsung Electronics Co., Ltd. Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof

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US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
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JPH04365382A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体発光装置及びその駆動方法
JP2560963B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
GB2277405A (en) 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
EP0952617B1 (en) * 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
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US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
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JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5708280A (en) 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
US5813752A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
ATE279789T1 (de) * 1997-08-29 2004-10-15 Cree Inc Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen

Also Published As

Publication number Publication date
EP1018169B1 (en) 2004-10-13
DE69827025T2 (de) 2005-09-08
WO1999010936A3 (en) 1999-05-14
KR20010023492A (ko) 2001-03-26
ES2226169T3 (es) 2005-03-16
AU9295098A (en) 1999-03-16
US20040026707A1 (en) 2004-02-12
WO1999010936A2 (en) 1999-03-04
CA2299379A1 (en) 1999-03-04
EP1018169A2 (en) 2000-07-12
JP2009239294A (ja) 2009-10-15
DE69827025D1 (de) 2004-11-18
KR100651145B1 (ko) 2006-11-28
JP4597363B2 (ja) 2010-12-15
JP2001514451A (ja) 2001-09-11
CN1129192C (zh) 2003-11-26
CA2299379C (en) 2006-05-30
US6946682B2 (en) 2005-09-20
CN1269056A (zh) 2000-10-04

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