JP4597363B2 - 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード - Google Patents

標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード Download PDF

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Publication number
JP4597363B2
JP4597363B2 JP2000508147A JP2000508147A JP4597363B2 JP 4597363 B2 JP4597363 B2 JP 4597363B2 JP 2000508147 A JP2000508147 A JP 2000508147A JP 2000508147 A JP2000508147 A JP 2000508147A JP 4597363 B2 JP4597363 B2 JP 4597363B2
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Japan
Prior art keywords
diode
light emitting
gallium nitride
layer
type
Prior art date
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Expired - Lifetime
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JP2000508147A
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English (en)
Japanese (ja)
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JP2001514451A (ja
Inventor
スレイター，デーヴィッド・ビー，ジュニアー
ネグリー，ジェラルド・エイチ
エドモンド，ジョン・アダム
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Wolfspeed Inc
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Cree Inc
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Publication of JP4597363B2 publication Critical patent/JP4597363B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
JP2000508147A 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード Expired - Lifetime JP4597363B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29
US08/920,409 1997-08-29
PCT/US1998/017849 WO1999010936A2 (en) 1997-08-29 1998-08-28 Robust group iii nitride light emitting diode for high reliability in standard applications

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009125100A Division JP2009239294A (ja) 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Publications (2)

Publication Number Publication Date
JP2001514451A JP2001514451A (ja) 2001-09-11
JP4597363B2 true JP4597363B2 (ja) 2010-12-15

Family

ID=25443701

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000508147A Expired - Lifetime JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード
JP2009125100A Ceased JP2009239294A (ja) 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009125100A Ceased JP2009239294A (ja) 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Country Status (11)

Country Link
US (1) US6946682B2 (enExample)
EP (1) EP1018169B1 (enExample)
JP (2) JP4597363B2 (enExample)
KR (1) KR100651145B1 (enExample)
CN (1) CN1129192C (enExample)
AT (1) ATE279789T1 (enExample)
AU (1) AU9295098A (enExample)
CA (1) CA2299379C (enExample)
DE (1) DE69827025T2 (enExample)
ES (1) ES2226169T3 (enExample)
WO (1) WO1999010936A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2009239294A (ja) * 1997-08-29 2009-10-15 Cree Inc 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

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DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
AU2003301057A1 (en) * 2002-12-20 2004-07-22 Cree, Inc. Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
US20070241352A1 (en) * 2004-06-18 2007-10-18 Showa Denko K. K. Group III Nitride Semiconductor Light Emitting Device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

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US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
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JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239294A (ja) * 1997-08-29 2009-10-15 Cree Inc 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Also Published As

Publication number Publication date
DE69827025D1 (de) 2004-11-18
US20040026707A1 (en) 2004-02-12
EP1018169A2 (en) 2000-07-12
WO1999010936A3 (en) 1999-05-14
CN1129192C (zh) 2003-11-26
ATE279789T1 (de) 2004-10-15
CN1269056A (zh) 2000-10-04
CA2299379A1 (en) 1999-03-04
CA2299379C (en) 2006-05-30
ES2226169T3 (es) 2005-03-16
AU9295098A (en) 1999-03-16
WO1999010936A2 (en) 1999-03-04
DE69827025T2 (de) 2005-09-08
KR20010023492A (ko) 2001-03-26
EP1018169B1 (en) 2004-10-13
KR100651145B1 (ko) 2006-11-28
JP2009239294A (ja) 2009-10-15
US6946682B2 (en) 2005-09-20
JP2001514451A (ja) 2001-09-11

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