DE60330452D1 - Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii - Google Patents

Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Info

Publication number
DE60330452D1
DE60330452D1 DE60330452T DE60330452T DE60330452D1 DE 60330452 D1 DE60330452 D1 DE 60330452D1 DE 60330452 T DE60330452 T DE 60330452T DE 60330452 T DE60330452 T DE 60330452T DE 60330452 D1 DE60330452 D1 DE 60330452D1
Authority
DE
Germany
Prior art keywords
light
emitting diode
contact
producing
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60330452T
Other languages
German (de)
English (en)
Inventor
John Adam Edmond
Brian Thibeaut
David Beardsley Slater Jr
Gerald H Negley
Van Allen Mieczkowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60330452D1 publication Critical patent/DE60330452D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
DE60330452T 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii Expired - Lifetime DE60330452D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/145,222 US6825501B2 (en) 1997-08-29 2002-05-14 Robust Group III light emitting diode for high reliability in standard packaging applications
PCT/US2003/014990 WO2003098712A2 (en) 2002-05-14 2003-05-14 High-reliability group iii-nitride light emitting diode

Publications (1)

Publication Number Publication Date
DE60330452D1 true DE60330452D1 (de) 2010-01-21

Family

ID=29548262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60330452T Expired - Lifetime DE60330452D1 (de) 2002-05-14 2003-05-14 Verfahren zur herstellung einer lichtemittierenden diode aus einer nitridverbindung der gruppe iii

Country Status (11)

Country Link
US (3) US6825501B2 (enExample)
EP (2) EP1509956B1 (enExample)
JP (2) JP2005526403A (enExample)
KR (1) KR20050005479A (enExample)
CN (1) CN100407449C (enExample)
AT (1) ATE451722T1 (enExample)
AU (1) AU2003237835A1 (enExample)
CA (1) CA2485640A1 (enExample)
DE (1) DE60330452D1 (enExample)
TW (1) TWI253185B (enExample)
WO (1) WO2003098712A2 (enExample)

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US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
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CN113412341B (zh) 2019-02-11 2024-11-01 应用材料公司 在脉冲式pvd中通过等离子体改性从晶片移除颗粒的方法
CN110400858A (zh) * 2019-06-25 2019-11-01 湖南红太阳光电科技有限公司 一种hjt电池双层透明导电氧化物薄膜的制备方法
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Also Published As

Publication number Publication date
US6825501B2 (en) 2004-11-30
EP2144307A2 (en) 2010-01-13
EP1509956B1 (en) 2009-12-09
CA2485640A1 (en) 2003-11-27
EP2144307B1 (en) 2018-10-03
US20070085104A1 (en) 2007-04-19
TW200408146A (en) 2004-05-16
US20050095737A1 (en) 2005-05-05
CN1653625A (zh) 2005-08-10
US20030201453A2 (en) 2003-10-30
JP2010016409A (ja) 2010-01-21
US7473938B2 (en) 2009-01-06
EP1509956A2 (en) 2005-03-02
KR20050005479A (ko) 2005-01-13
ATE451722T1 (de) 2009-12-15
US7125737B2 (en) 2006-10-24
WO2003098712A2 (en) 2003-11-27
EP2144307A3 (en) 2015-04-15
JP2005526403A (ja) 2005-09-02
WO2003098712A3 (en) 2004-06-10
TWI253185B (en) 2006-04-11
CN100407449C (zh) 2008-07-30
AU2003237835A1 (en) 2003-12-02
US20030025121A1 (en) 2003-02-06

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