ATE524836T1 - Herstellungsverfahren einer halbleiter- dünnschicht aus gainn - Google Patents

Herstellungsverfahren einer halbleiter- dünnschicht aus gainn

Info

Publication number
ATE524836T1
ATE524836T1 AT01923799T AT01923799T ATE524836T1 AT E524836 T1 ATE524836 T1 AT E524836T1 AT 01923799 T AT01923799 T AT 01923799T AT 01923799 T AT01923799 T AT 01923799T AT E524836 T1 ATE524836 T1 AT E524836T1
Authority
AT
Austria
Prior art keywords
gainn
layer
thin film
production process
semiconductor thin
Prior art date
Application number
AT01923799T
Other languages
English (en)
Inventor
Jean Massies
Nicolas Grandjean
Benjamin Damilano
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE524836T1 publication Critical patent/ATE524836T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
AT01923799T 2000-04-12 2001-04-11 Herstellungsverfahren einer halbleiter- dünnschicht aus gainn ATE524836T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0004683A FR2807909B1 (fr) 2000-04-12 2000-04-12 COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL
PCT/FR2001/001115 WO2001078157A1 (fr) 2000-04-12 2001-04-11 Couche mince semi-conductrice de gainn, son procede de preparation, diode electroluminescente comprenant cette couche et dispositif d'eclairage

Publications (1)

Publication Number Publication Date
ATE524836T1 true ATE524836T1 (de) 2011-09-15

Family

ID=8849163

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01923799T ATE524836T1 (de) 2000-04-12 2001-04-11 Herstellungsverfahren einer halbleiter- dünnschicht aus gainn

Country Status (10)

Country Link
US (1) US6730943B2 (de)
EP (1) EP1273049B1 (de)
JP (1) JP5296280B2 (de)
KR (1) KR100900933B1 (de)
CN (1) CN1422444A (de)
AT (1) ATE524836T1 (de)
AU (1) AU2001250486A1 (de)
CA (1) CA2405517C (de)
FR (1) FR2807909B1 (de)
WO (1) WO2001078157A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2810159B1 (fr) * 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
DE20307958U1 (de) * 2003-05-21 2003-09-04 Arturo Salice S.P.A., Novedrate, Como Korpuselement mit Klappe
JP2004356522A (ja) 2003-05-30 2004-12-16 Sumitomo Chem Co Ltd ３−５族化合物半導体、その製造方法及びその用途
NL1023679C2 (nl) * 2003-06-17 2004-12-20 Tno Lichtemitterende diode.
TWI247439B (en) * 2004-12-17 2006-01-11 Genesis Photonics Inc Light-emitting diode device
FR2888664B1 (fr) * 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
KR100771811B1 (ko) * 2005-12-27 2007-10-30 삼성전기주식회사 백색 발광 장치
FR2898434B1 (fr) * 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
FR2912552B1 (fr) * 2007-02-14 2009-05-22 Soitec Silicon On Insulator Structure multicouche et son procede de fabrication.
FR2932608B1 (fr) * 2008-06-13 2011-04-22 Centre Nat Rech Scient Procede de croissance de nitrure d'elements du groupe iii.
JP5136437B2 (ja) * 2009-01-23 2013-02-06 住友電気工業株式会社 窒化物系半導体光素子を作製する方法
US8912554B2 (en) 2011-06-08 2014-12-16 Micron Technology, Inc. Long wavelength light emitting device with photoluminescence emission and high quantum efficiency
DE102014107472A1 (de) 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Beleuchtungsvorrichtung
WO2017089857A1 (en) 2015-11-23 2017-06-01 Ecole Polytechnique Federale De Lausanne (Epfl) Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3247437B2 (ja) * 1992-03-10 2002-01-15 旭化成株式会社 窒化物系半導体素子およびその製造方法
JP3361285B2 (ja) * 1996-01-19 2003-01-07 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP3314620B2 (ja) * 1996-04-11 2002-08-12 日亜化学工業株式会社 窒化物半導体発光素子
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
JP3675044B2 (ja) * 1996-06-28 2005-07-27 豊田合成株式会社 ３族窒化物半導体発光素子
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3394678B2 (ja) * 1997-02-14 2003-04-07 シャープ株式会社 半導体発光素子
JPH10270756A (ja) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
JP3880683B2 (ja) * 1997-04-23 2007-02-14 シャープ株式会社 窒化ガリウム系半導体発光素子の製造方法
JPH10335700A (ja) * 1997-06-04 1998-12-18 Toshiba Corp 半導体発光素子およびその製造方法
JPH1187773A (ja) * 1997-09-08 1999-03-30 Toshiba Corp 発光素子
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JPH11121806A (ja) * 1997-10-21 1999-04-30 Sharp Corp 半導体発光素子
JPH11233827A (ja) * 1998-02-10 1999-08-27 Furukawa Electric Co Ltd:The 半導体発光素子
JP3978858B2 (ja) * 1998-04-03 2007-09-19 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子
JP3543628B2 (ja) * 1998-08-13 2004-07-14 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体発光素子の製造方法
JP3511923B2 (ja) * 1998-12-25 2004-03-29 日亜化学工業株式会社 発光素子
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation

Also Published As

Publication number Publication date
KR20030001405A (ko) 2003-01-06
EP1273049B1 (de) 2011-09-14
FR2807909B1 (fr) 2006-07-28
US6730943B2 (en) 2004-05-04
JP2003530703A (ja) 2003-10-14
CA2405517A1 (fr) 2001-10-18
KR100900933B1 (ko) 2009-06-08
CN1422444A (zh) 2003-06-04
FR2807909A1 (fr) 2001-10-19
US20030092209A1 (en) 2003-05-15
JP5296280B2 (ja) 2013-09-25
WO2001078157A1 (fr) 2001-10-18
EP1273049A1 (de) 2003-01-08
AU2001250486A1 (en) 2001-10-23
CA2405517C (fr) 2009-12-22

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