DE60304759D1 - Oberflächenemittierendes lichtemittierendes Halbleiterbauteil und Verfahren zu dessen Herstellung, Optisches Modul und Lichtübertragungs-Vorrichtung - Google Patents

Oberflächenemittierendes lichtemittierendes Halbleiterbauteil und Verfahren zu dessen Herstellung, Optisches Modul und Lichtübertragungs-Vorrichtung

Info

Publication number
DE60304759D1
DE60304759D1 DE60304759T DE60304759T DE60304759D1 DE 60304759 D1 DE60304759 D1 DE 60304759D1 DE 60304759 T DE60304759 T DE 60304759T DE 60304759 T DE60304759 T DE 60304759T DE 60304759 D1 DE60304759 D1 DE 60304759D1
Authority
DE
Germany
Prior art keywords
emitting
light
optical module
production
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60304759T
Other languages
English (en)
Other versions
DE60304759T2 (de
Inventor
Tsuyoshi Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE60304759D1 publication Critical patent/DE60304759D1/de
Application granted granted Critical
Publication of DE60304759T2 publication Critical patent/DE60304759T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE60304759T 2002-03-01 2003-02-28 Oberflächenemittierendes lichtemittierendes Halbleiterbauteil und Verfahren zu dessen Herstellung, Optisches Modul und Lichtübertragungs-Vorrichtung Expired - Lifetime DE60304759T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002055983A JP3767496B2 (ja) 2002-03-01 2002-03-01 面発光型発光素子およびその製造方法、光モジュール、光伝達装置
JP2002055983 2002-03-01

Publications (2)

Publication Number Publication Date
DE60304759D1 true DE60304759D1 (de) 2006-06-01
DE60304759T2 DE60304759T2 (de) 2006-09-28

Family

ID=27678591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60304759T Expired - Lifetime DE60304759T2 (de) 2002-03-01 2003-02-28 Oberflächenemittierendes lichtemittierendes Halbleiterbauteil und Verfahren zu dessen Herstellung, Optisches Modul und Lichtübertragungs-Vorrichtung

Country Status (5)

Country Link
US (1) US7157743B2 (de)
EP (1) EP1341278B1 (de)
JP (1) JP3767496B2 (de)
AT (1) ATE324691T1 (de)
DE (1) DE60304759T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4165244B2 (ja) 2003-02-06 2008-10-15 セイコーエプソン株式会社 受光素子の製造方法
JP2004240361A (ja) 2003-02-10 2004-08-26 Seiko Epson Corp レンズ一体型光ファイバおよびその製造方法、光モジュール、ならびに光伝達装置
JP4120813B2 (ja) 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
JP3719441B2 (ja) * 2003-08-01 2005-11-24 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、光伝達装置
JP4586350B2 (ja) * 2003-10-24 2010-11-24 セイコーエプソン株式会社 薄膜デバイス及び電子機器
KR100647278B1 (ko) * 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
JP3729271B2 (ja) * 2004-01-08 2005-12-21 セイコーエプソン株式会社 光素子およびその製造方法
US7483469B2 (en) 2004-11-01 2009-01-27 Seiko Epson Corporation Surface-emitting type semiconductor laser and its manufacturing method, optical module, and light transmission device
JP2006323147A (ja) 2005-05-19 2006-11-30 Seiko Epson Corp マイクロレンズの製造方法、マイクロレンズ、及び光学膜、プロジェクション用スクリーン、プロジェクターシステム、電気光学装置、電子機器
JP2006339418A (ja) * 2005-06-02 2006-12-14 Seiko Epson Corp 光素子及びその製造方法
US7288798B2 (en) * 2005-06-02 2007-10-30 Lighthouse Technology Co., Ltd Light module
DE102008014122A1 (de) 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
CN103219471A (zh) * 2013-04-09 2013-07-24 吉林大学 基于半透明复合阴极的顶发射有机电致发光器件及其制备方法
JP6221540B2 (ja) * 2013-09-13 2017-11-01 富士通株式会社 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法
JP6248604B2 (ja) * 2013-12-18 2017-12-20 日亜化学工業株式会社 半導体発光素子及びその電極形成方法
JP6918540B2 (ja) * 2017-03-27 2021-08-11 スタンレー電気株式会社 発光装置
DE102017112235A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
GB2573576B (en) * 2018-05-11 2020-06-10 Rockley Photonics Ltd Optoelectronic device and method of manufacturing thereof
JP2020108087A (ja) 2018-12-28 2020-07-09 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
JPWO2021090670A1 (de) 2019-11-06 2021-05-14

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JPS5646574A (en) 1979-09-25 1981-04-27 Mitsubishi Electric Corp Photoelectric converter
CA1139412A (en) * 1980-09-10 1983-01-11 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
JPH0770758B2 (ja) 1983-12-19 1995-07-31 松下電器産業株式会社 発光半導体装置
JP2657214B2 (ja) 1988-08-05 1997-09-24 科学技術振興事業団 面発光レーザ素子の製造方法
JPH0254589A (ja) 1988-08-18 1990-02-23 Res Dev Corp Of Japan 面発光レーザの製造方法
JP2875269B2 (ja) 1989-01-10 1999-03-31 富士通株式会社 光ディスク装置
JPH088217B2 (ja) 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
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JP4049585B2 (ja) 2001-12-27 2008-02-20 株式会社リコー 面発光型レーザ素子および面発光型レーザアレイおよび光インターコネクションシステムおよび光通信システム

Also Published As

Publication number Publication date
US20030197184A1 (en) 2003-10-23
JP2003258380A (ja) 2003-09-12
DE60304759T2 (de) 2006-09-28
EP1341278B1 (de) 2006-04-26
US7157743B2 (en) 2007-01-02
ATE324691T1 (de) 2006-05-15
JP3767496B2 (ja) 2006-04-19
EP1341278A1 (de) 2003-09-03

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