JP2009531858A5 - - Google Patents
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- Publication number
- JP2009531858A5 JP2009531858A5 JP2009502777A JP2009502777A JP2009531858A5 JP 2009531858 A5 JP2009531858 A5 JP 2009531858A5 JP 2009502777 A JP2009502777 A JP 2009502777A JP 2009502777 A JP2009502777 A JP 2009502777A JP 2009531858 A5 JP2009531858 A5 JP 2009531858A5
- Authority
- JP
- Japan
- Prior art keywords
- processing system
- processing
- pedestal
- grooves
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 11
- 239000011248 coating agent Substances 0.000 claims 9
- 238000000576 coating method Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/390,199 US8057633B2 (en) | 2006-03-28 | 2006-03-28 | Post-etch treatment system for removing residue on a substrate |
| US11/390,199 | 2006-03-28 | ||
| PCT/US2007/003105 WO2007126468A1 (en) | 2006-03-28 | 2007-02-07 | Post-etch treatment system for removing residue on a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009531858A JP2009531858A (ja) | 2009-09-03 |
| JP2009531858A5 true JP2009531858A5 (enExample) | 2010-02-12 |
| JP5148592B2 JP5148592B2 (ja) | 2013-02-20 |
Family
ID=38573893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009502777A Expired - Fee Related JP5148592B2 (ja) | 2006-03-28 | 2007-02-07 | 基板上の残留物を除去するための後エッチング処理システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8057633B2 (enExample) |
| JP (1) | JP5148592B2 (enExample) |
| KR (1) | KR101313426B1 (enExample) |
| CN (1) | CN101410941B (enExample) |
| TW (1) | TWI355688B (enExample) |
| WO (1) | WO2007126468A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3025125B2 (ja) | 1993-03-11 | 2000-03-27 | キヤノン株式会社 | 打抜剥離方法および打抜剥離装置 |
| US8715455B2 (en) * | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
| US20100130017A1 (en) * | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US20110226280A1 (en) * | 2008-11-21 | 2011-09-22 | Axcelis Technologies, Inc. | Plasma mediated ashing processes |
| US20120024314A1 (en) * | 2010-07-27 | 2012-02-02 | Axcelis Technologies, Inc. | Plasma mediated ashing processes |
| CN102201336B (zh) * | 2010-03-26 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件层上的氧化层刻蚀后残留物的去除方法 |
| WO2011121508A1 (en) * | 2010-03-29 | 2011-10-06 | Koolerheadz | Modular gas injection device |
| US20120211029A1 (en) * | 2011-02-22 | 2012-08-23 | Pandit Viraj S | Load lock assembly and method for particle reduction |
| US8999610B2 (en) * | 2012-12-31 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography mask repairing process |
| WO2015098183A1 (ja) * | 2013-12-26 | 2015-07-02 | シャープ株式会社 | アクティブマトリクス基板の製造方法および表示装置の製造方法ならびに表示装置 |
| US10192717B2 (en) * | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| EP3334566B1 (en) * | 2015-08-14 | 2021-11-24 | M Cubed Technologies Inc. | Wafer chuck featuring reduced friction support surface |
| KR102641441B1 (ko) | 2016-09-28 | 2024-02-29 | 삼성전자주식회사 | 링 어셈블리 및 이를 포함하는 척 어셈블리 |
| KR102806341B1 (ko) | 2017-01-04 | 2025-05-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 플라즈마 처리 장치 |
| US10766057B2 (en) | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
| US11094511B2 (en) * | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
| CN110502049B (zh) * | 2019-08-30 | 2021-05-07 | 北京北方华创微电子装备有限公司 | 卡盘温度控制方法、卡盘温度控制系统及半导体设备 |
| KR102845724B1 (ko) * | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| US11710777B2 (en) * | 2020-10-27 | 2023-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for manufacture |
| KR20220148735A (ko) * | 2021-04-29 | 2022-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템 및 반응기 시스템을 세정하기 위한 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58170536A (ja) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | プラズマ処理方法及びその装置 |
| JPH04236425A (ja) * | 1991-01-21 | 1992-08-25 | Toshiba Corp | プラズマ処理装置 |
| JPH05184977A (ja) * | 1992-01-09 | 1993-07-27 | Toshiba Corp | シャワーノズル |
| JPH0824117B2 (ja) * | 1992-10-27 | 1996-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JPH07130828A (ja) * | 1993-10-28 | 1995-05-19 | Sony Corp | 半導体製造装置 |
| JPH08507196A (ja) * | 1994-01-31 | 1996-07-30 | アプライド マテリアルズ インコーポレイテッド | 共形な絶縁体フィルムを有する静電チャック |
| US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
| JP3121524B2 (ja) * | 1995-06-07 | 2001-01-09 | 東京エレクトロン株式会社 | エッチング装置 |
| TW286414B (en) * | 1995-07-10 | 1996-09-21 | Watkins Johnson Co | Electrostatic chuck assembly |
| JP3434947B2 (ja) * | 1995-11-02 | 2003-08-11 | 株式会社アルバック | シャワープレート |
| US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
| JPH1056054A (ja) * | 1996-08-09 | 1998-02-24 | Fujitsu Ltd | ヒータ付き基板載置台、成膜装置及びエッチング装置 |
| US6529362B2 (en) * | 1997-03-06 | 2003-03-04 | Applied Materials Inc. | Monocrystalline ceramic electrostatic chuck |
| US6063202A (en) * | 1997-09-26 | 2000-05-16 | Novellus Systems, Inc. | Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition |
| US6073576A (en) * | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
| US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
| KR100249391B1 (ko) * | 1997-12-30 | 2000-03-15 | 김영환 | 가열장치 |
| US6179924B1 (en) * | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
| US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
| US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
| JP2001237222A (ja) * | 2000-02-22 | 2001-08-31 | Shibaura Mechatronics Corp | 真空処理装置 |
| JP4697833B2 (ja) * | 2000-06-14 | 2011-06-08 | キヤノンアネルバ株式会社 | 静電吸着機構及び表面処理装置 |
| US6899804B2 (en) * | 2001-04-10 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
| JP2002305180A (ja) * | 2001-04-06 | 2002-10-18 | Seiko Epson Corp | プラズマ処理装置 |
| JP2003197615A (ja) * | 2001-12-26 | 2003-07-11 | Tokyo Electron Ltd | プラズマ処理装置およびそのクリーニング方法 |
| JP2003318155A (ja) * | 2002-04-12 | 2003-11-07 | Applied Materials Inc | ガス導入装置及びその生産方法、並びに、アッシング装置及びその運転方法 |
| US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
| WO2004095531A2 (en) * | 2003-03-28 | 2004-11-04 | Tokyo Electron Ltd | Method and system for temperature control of a substrate |
| US6843711B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
| US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
| US7381291B2 (en) * | 2004-07-29 | 2008-06-03 | Asm Japan K.K. | Dual-chamber plasma processing apparatus |
| US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
| US8034176B2 (en) * | 2006-03-28 | 2011-10-11 | Tokyo Electron Limited | Gas distribution system for a post-etch treatment system |
| US7759249B2 (en) * | 2006-03-28 | 2010-07-20 | Tokyo Electron Limited | Method of removing residue from a substrate |
-
2006
- 2006-03-28 US US11/390,199 patent/US8057633B2/en not_active Expired - Fee Related
-
2007
- 2007-02-07 WO PCT/US2007/003105 patent/WO2007126468A1/en not_active Ceased
- 2007-02-07 CN CN2007800113224A patent/CN101410941B/zh not_active Expired - Fee Related
- 2007-02-07 JP JP2009502777A patent/JP5148592B2/ja not_active Expired - Fee Related
- 2007-02-07 KR KR1020087026344A patent/KR101313426B1/ko not_active Expired - Fee Related
- 2007-03-26 TW TW096110399A patent/TWI355688B/zh not_active IP Right Cessation
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