CN101410941B - 用于去除衬底上的残留物的刻蚀后处理系统 - Google Patents

用于去除衬底上的残留物的刻蚀后处理系统 Download PDF

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Publication number
CN101410941B
CN101410941B CN2007800113224A CN200780011322A CN101410941B CN 101410941 B CN101410941 B CN 101410941B CN 2007800113224 A CN2007800113224 A CN 2007800113224A CN 200780011322 A CN200780011322 A CN 200780011322A CN 101410941 B CN101410941 B CN 101410941B
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China
Prior art keywords
treatment system
substrate
process chamber
free
coupled
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Expired - Fee Related
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CN2007800113224A
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English (en)
Chinese (zh)
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CN101410941A (zh
Inventor
塚本雄二
工藤恭久
托马斯·哈梅林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN2007800113224A 2006-03-28 2007-02-07 用于去除衬底上的残留物的刻蚀后处理系统 Expired - Fee Related CN101410941B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,199 2006-03-28
US11/390,199 US8057633B2 (en) 2006-03-28 2006-03-28 Post-etch treatment system for removing residue on a substrate
PCT/US2007/003105 WO2007126468A1 (en) 2006-03-28 2007-02-07 Post-etch treatment system for removing residue on a substrate

Publications (2)

Publication Number Publication Date
CN101410941A CN101410941A (zh) 2009-04-15
CN101410941B true CN101410941B (zh) 2012-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800113224A Expired - Fee Related CN101410941B (zh) 2006-03-28 2007-02-07 用于去除衬底上的残留物的刻蚀后处理系统

Country Status (6)

Country Link
US (1) US8057633B2 (enExample)
JP (1) JP5148592B2 (enExample)
KR (1) KR101313426B1 (enExample)
CN (1) CN101410941B (enExample)
TW (1) TWI355688B (enExample)
WO (1) WO2007126468A1 (enExample)

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US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
US20120024314A1 (en) * 2010-07-27 2012-02-02 Axcelis Technologies, Inc. Plasma mediated ashing processes
CN102201336B (zh) * 2010-03-26 2013-03-06 中芯国际集成电路制造(上海)有限公司 半导体器件层上的氧化层刻蚀后残留物的去除方法
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US20120211029A1 (en) * 2011-02-22 2012-08-23 Pandit Viraj S Load lock assembly and method for particle reduction
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
WO2015098183A1 (ja) * 2013-12-26 2015-07-02 シャープ株式会社 アクティブマトリクス基板の製造方法および表示装置の製造方法ならびに表示装置
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
WO2017030873A1 (en) * 2015-08-14 2017-02-23 M Cubed Technologies, Inc. Wafer chuck featuring reduced friction support surface
KR102641441B1 (ko) 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
KR102806341B1 (ko) 2017-01-04 2025-05-12 삼성전자주식회사 포커스 링 및 이를 포함하는 플라즈마 처리 장치
US10766057B2 (en) 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN110502049B (zh) * 2019-08-30 2021-05-07 北京北方华创微电子装备有限公司 卡盘温度控制方法、卡盘温度控制系统及半导体设备
KR102845724B1 (ko) * 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11710777B2 (en) * 2020-10-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacture
KR20220148735A (ko) * 2021-04-29 2022-11-07 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템 및 반응기 시스템을 세정하기 위한 방법

Citations (1)

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US6207932B1 (en) * 1997-12-30 2001-03-27 Hyundai Electronics Industries, Co., Ltd. Heater block for heating wafer

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Also Published As

Publication number Publication date
WO2007126468A1 (en) 2007-11-08
TW200746289A (en) 2007-12-16
TWI355688B (en) 2012-01-01
JP5148592B2 (ja) 2013-02-20
KR101313426B1 (ko) 2013-10-02
KR20080109888A (ko) 2008-12-17
JP2009531858A (ja) 2009-09-03
CN101410941A (zh) 2009-04-15
US20070235138A1 (en) 2007-10-11
US8057633B2 (en) 2011-11-15

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Granted publication date: 20120111

Termination date: 20160207