JP2007266610A5 - - Google Patents
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- Publication number
- JP2007266610A5 JP2007266610A5 JP2007085108A JP2007085108A JP2007266610A5 JP 2007266610 A5 JP2007266610 A5 JP 2007266610A5 JP 2007085108 A JP2007085108 A JP 2007085108A JP 2007085108 A JP2007085108 A JP 2007085108A JP 2007266610 A5 JP2007266610 A5 JP 2007266610A5
- Authority
- JP
- Japan
- Prior art keywords
- diffuser
- gas distribution
- processing
- processing system
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 230000002093 peripheral effect Effects 0.000 claims 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/390,196 | 2006-03-28 | ||
| US11/390,196 US8034176B2 (en) | 2006-03-28 | 2006-03-28 | Gas distribution system for a post-etch treatment system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266610A JP2007266610A (ja) | 2007-10-11 |
| JP2007266610A5 true JP2007266610A5 (enExample) | 2010-04-22 |
| JP5305316B2 JP5305316B2 (ja) | 2013-10-02 |
Family
ID=38573892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007085108A Expired - Fee Related JP5305316B2 (ja) | 2006-03-28 | 2007-03-28 | エッチング後の処理システムのためのガス分配システム |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8034176B2 (enExample) |
| JP (1) | JP5305316B2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
| US8129281B1 (en) | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
| US8057633B2 (en) * | 2006-03-28 | 2011-11-15 | Tokyo Electron Limited | Post-etch treatment system for removing residue on a substrate |
| US8715455B2 (en) * | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
| US8435895B2 (en) | 2007-04-04 | 2013-05-07 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
| KR101791685B1 (ko) * | 2008-10-14 | 2017-11-20 | 노벨러스 시스템즈, 인코포레이티드 | 수소 이용 화학 반응으로 고용량 주입 스트립(hdis) 방법 및 장치 |
| US8591661B2 (en) * | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
| US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
| JP2012531053A (ja) * | 2009-08-25 | 2012-12-06 | シルバーブルック リサーチ ピーティワイ リミテッド | フォトレジストおよびエッチング残留物をビアから除去する方法 |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| JP5770740B2 (ja) | 2009-12-11 | 2015-08-26 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置 |
| US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
| JP2013008949A (ja) * | 2011-05-26 | 2013-01-10 | Hitachi Kokusai Electric Inc | 基板載置台、基板処理装置及び半導体装置の製造方法 |
| US20120312234A1 (en) * | 2011-06-11 | 2012-12-13 | Tokyo Electron Limited | Process gas diffuser assembly for vapor deposition system |
| US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| KR101480340B1 (ko) * | 2013-08-12 | 2015-01-09 | 주식회사 테라텍 | 이종 플라즈마 다중 연결을 이용한 애슁 공정 장치 및 이를 이용한 애슁 방법 |
| TWI654333B (zh) * | 2013-12-18 | 2019-03-21 | 美商蘭姆研究公司 | 具有均勻性折流板之半導體基板處理設備 |
| US20150345019A1 (en) * | 2014-05-30 | 2015-12-03 | Applied Materials, Inc. | Method and apparatus for improving gas flow in a substrate processing chamber |
| US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
| US11384432B2 (en) | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
| EP3178540A1 (en) * | 2015-12-09 | 2017-06-14 | Point Engineering Co., Ltd. | Fluid permeable anodic oxide film and fluid permeable body using anodic oxide film |
| US10586696B2 (en) | 2017-05-12 | 2020-03-10 | Applied Materials, Inc. | Halogen abatement for high aspect ratio channel device damage layer removal for EPI growth |
| TWI794238B (zh) * | 2017-07-13 | 2023-03-01 | 荷蘭商Asm智慧財產控股公司 | 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法 |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| CN112908819B (zh) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | 气体分布器及其加工方法 |
| CN113448172A (zh) * | 2020-03-27 | 2021-09-28 | 长鑫存储技术有限公司 | 一种光刻胶涂覆装置及方法 |
| KR102825749B1 (ko) * | 2020-04-16 | 2025-06-26 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2439144C3 (de) * | 1974-08-14 | 1979-04-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Verteilen strömender Medien von einem Strömungsquerschnitt auf einen davon verschiedenen Strömungsquerschnitt |
| DE69130434T2 (de) * | 1990-06-29 | 1999-04-29 | Canon K.K., Tokio/Tokyo | Platte zum Arbeiten unter Vakuum |
| JPH05184977A (ja) * | 1992-01-09 | 1993-07-27 | Toshiba Corp | シャワーノズル |
| JPH0824117B2 (ja) * | 1992-10-27 | 1996-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JPH0799162A (ja) * | 1993-06-21 | 1995-04-11 | Hitachi Ltd | Cvdリアクタ装置 |
| US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
| US5571366A (en) * | 1993-10-20 | 1996-11-05 | Tokyo Electron Limited | Plasma processing apparatus |
| JP3121524B2 (ja) * | 1995-06-07 | 2001-01-09 | 東京エレクトロン株式会社 | エッチング装置 |
| US6616767B2 (en) * | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
| JPH1154496A (ja) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | 熱処理装置及びガス処理装置 |
| JPH11297681A (ja) * | 1998-04-07 | 1999-10-29 | Mitsubishi Electric Corp | 高誘電率薄膜形成用cvd装置および高誘電率薄膜の形成方法 |
| JP3911902B2 (ja) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | 処理装置及び金属部品の表面処理方法 |
| KR100319494B1 (ko) * | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
| US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
| US20020144784A1 (en) * | 2001-04-06 | 2002-10-10 | Curry Don E. | Wafer processing apparatus having a chamber with an upper wall having gas supply openings formed therein which promote more even processing of a wafer |
| US6652711B2 (en) * | 2001-06-06 | 2003-11-25 | Tokyo Electron Limited | Inductively-coupled plasma processing system |
| US20040129218A1 (en) * | 2001-12-07 | 2004-07-08 | Toshiki Takahashi | Exhaust ring mechanism and plasma processing apparatus using the same |
| JP2003318155A (ja) * | 2002-04-12 | 2003-11-07 | Applied Materials Inc | ガス導入装置及びその生産方法、並びに、アッシング装置及びその運転方法 |
| JP4352783B2 (ja) * | 2002-08-23 | 2009-10-28 | 東京エレクトロン株式会社 | ガス供給系及び処理システム |
| WO2004073850A1 (en) * | 2003-02-14 | 2004-09-02 | Tokyo Electron Limited | Gas feeding apparatus |
| US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| US7273526B2 (en) * | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
| US20070032072A1 (en) * | 2005-08-02 | 2007-02-08 | Stmicroelectronics Inc. | Nucleation layer deposition on semiconductor process equipment parts |
-
2006
- 2006-03-28 US US11/390,196 patent/US8034176B2/en not_active Expired - Fee Related
-
2007
- 2007-03-28 JP JP2007085108A patent/JP5305316B2/ja not_active Expired - Fee Related
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