JP5305316B2 - エッチング後の処理システムのためのガス分配システム - Google Patents

エッチング後の処理システムのためのガス分配システム Download PDF

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Publication number
JP5305316B2
JP5305316B2 JP2007085108A JP2007085108A JP5305316B2 JP 5305316 B2 JP5305316 B2 JP 5305316B2 JP 2007085108 A JP2007085108 A JP 2007085108A JP 2007085108 A JP2007085108 A JP 2007085108A JP 5305316 B2 JP5305316 B2 JP 5305316B2
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Japan
Prior art keywords
diffuser
processing system
gas distribution
processing
central body
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Expired - Fee Related
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JP2007085108A
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Japanese (ja)
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JP2007266610A5 (enExample
JP2007266610A (ja
Inventor
塚本雄二
エイチ．・スティーブン・トモザワ
サム・ヨン・キム
トーマス・ハメリン
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007085108A 2006-03-28 2007-03-28 エッチング後の処理システムのためのガス分配システム Expired - Fee Related JP5305316B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/390,196 2006-03-28
US11/390,196 US8034176B2 (en) 2006-03-28 2006-03-28 Gas distribution system for a post-etch treatment system

Publications (3)

Publication Number Publication Date
JP2007266610A JP2007266610A (ja) 2007-10-11
JP2007266610A5 JP2007266610A5 (enExample) 2010-04-22
JP5305316B2 true JP5305316B2 (ja) 2013-10-02

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JP2007085108A Expired - Fee Related JP5305316B2 (ja) 2006-03-28 2007-03-28 エッチング後の処理システムのためのガス分配システム

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Country Link
US (1) US8034176B2 (enExample)
JP (1) JP5305316B2 (enExample)

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US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
JP2012531053A (ja) * 2009-08-25 2012-12-06 シルバーブルック リサーチ ピーティワイ リミテッド フォトレジストおよびエッチング残留物をビアから除去する方法
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
JP5770740B2 (ja) 2009-12-11 2015-08-26 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
JP2013008949A (ja) * 2011-05-26 2013-01-10 Hitachi Kokusai Electric Inc 基板載置台、基板処理装置及び半導体装置の製造方法
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
KR101480340B1 (ko) * 2013-08-12 2015-01-09 주식회사 테라텍 이종 플라즈마 다중 연결을 이용한 애슁 공정 장치 및 이를 이용한 애슁 방법
TWI654333B (zh) * 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
US20150345019A1 (en) * 2014-05-30 2015-12-03 Applied Materials, Inc. Method and apparatus for improving gas flow in a substrate processing chamber
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
EP3178540A1 (en) * 2015-12-09 2017-06-14 Point Engineering Co., Ltd. Fluid permeable anodic oxide film and fluid permeable body using anodic oxide film
US10586696B2 (en) 2017-05-12 2020-03-10 Applied Materials, Inc. Halogen abatement for high aspect ratio channel device damage layer removal for EPI growth
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
CN112908819B (zh) * 2019-12-03 2022-04-01 长鑫存储技术有限公司 气体分布器及其加工方法
CN113448172A (zh) * 2020-03-27 2021-09-28 长鑫存储技术有限公司 一种光刻胶涂覆装置及方法
KR102825749B1 (ko) * 2020-04-16 2025-06-26 삼성디스플레이 주식회사 표시 장치의 제조 방법

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Publication number Publication date
JP2007266610A (ja) 2007-10-11
US8034176B2 (en) 2011-10-11
US20070235137A1 (en) 2007-10-11

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