JP2010514160A5 - - Google Patents

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Publication number
JP2010514160A5
JP2010514160A5 JP2009541418A JP2009541418A JP2010514160A5 JP 2010514160 A5 JP2010514160 A5 JP 2010514160A5 JP 2009541418 A JP2009541418 A JP 2009541418A JP 2009541418 A JP2009541418 A JP 2009541418A JP 2010514160 A5 JP2010514160 A5 JP 2010514160A5
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Japan
Prior art keywords
electrode assembly
gas flow
showerhead electrode
assembly according
backing member
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JP2009541418A
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Japanese (ja)
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JP2010514160A (ja
JP5156025B2 (ja
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Priority claimed from US11/640,193 external-priority patent/US8702866B2/en
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JP2009541418A 2006-12-18 2007-12-17 電極寿命の延長のためのガス流れの修正を伴うシャワーヘッド電極組立体 Active JP5156025B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/640,193 US8702866B2 (en) 2006-12-18 2006-12-18 Showerhead electrode assembly with gas flow modification for extended electrode life
US11/640,193 2006-12-18
PCT/US2007/025730 WO2008076408A1 (en) 2006-12-18 2007-12-17 Showerhead electrode assembly with gas flow modification for extended electrode life

Publications (3)

Publication Number Publication Date
JP2010514160A JP2010514160A (ja) 2010-04-30
JP2010514160A5 true JP2010514160A5 (enExample) 2011-02-03
JP5156025B2 JP5156025B2 (ja) 2013-03-06

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JP2009541418A Active JP5156025B2 (ja) 2006-12-18 2007-12-17 電極寿命の延長のためのガス流れの修正を伴うシャワーヘッド電極組立体

Country Status (7)

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US (2) US8702866B2 (enExample)
JP (1) JP5156025B2 (enExample)
KR (1) KR101413806B1 (enExample)
CN (1) CN101563762B (enExample)
SG (1) SG177220A1 (enExample)
TW (1) TWI469694B (enExample)
WO (1) WO2008076408A1 (enExample)

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8876024B2 (en) 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
CN101488446B (zh) 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
KR101110080B1 (ko) * 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションLam Research Corporation シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
ATE551439T1 (de) * 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP5709505B2 (ja) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
JP5912747B2 (ja) * 2011-03-31 2016-04-27 東京エレクトロン株式会社 ガス吐出機能付電極およびプラズマ処理装置
US20140116339A1 (en) * 2011-06-11 2014-05-01 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
US9111731B2 (en) * 2011-11-29 2015-08-18 Lam Research Corporation Gas feed insert in a plasma processing chamber and methods therefor
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US8970114B2 (en) * 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
KR101670382B1 (ko) * 2015-03-10 2016-10-28 우범제 퍼지가스 분사 플레이트 및 그 제조 방법
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
JP1545606S (enExample) * 2015-08-26 2016-03-14
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN108140550B (zh) * 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
KR102662705B1 (ko) * 2016-01-24 2024-04-30 어플라이드 머티어리얼스, 인코포레이티드 파이 형상 처리를 발생시키기 위한 대칭적인 플라즈마 소스
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
TWM576592U (zh) * 2017-04-27 2019-04-11 美商應用材料股份有限公司 氣體分配板及包括此氣體分配板的處理腔室
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN111321391A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 用于半导体制造的喷头
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11332827B2 (en) * 2019-03-27 2022-05-17 Applied Materials, Inc. Gas distribution plate with high aspect ratio holes and a high hole density
US20210047730A1 (en) * 2019-08-13 2021-02-18 Applied Materials, Inc. Chamber configurations for controlled deposition
US11859284B2 (en) * 2019-08-23 2024-01-02 Taiwan Semiconductor Manufacturing Company Ltd. Shower head structure and plasma processing apparatus using the same
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
US20220399186A1 (en) * 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
JP7648307B2 (ja) 2021-06-22 2025-03-18 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
WO2023058480A1 (ja) * 2021-10-05 2023-04-13 東京エレクトロン株式会社 上部電極構造及びプラズマ処理装置
JP7670441B2 (ja) 2021-11-22 2025-04-30 東京エレクトロン株式会社 シャワーヘッド電極組立体及びプラズマ処理装置
JP7737775B2 (ja) * 2022-02-14 2025-09-11 東京エレクトロン株式会社 プラズマ処理装置
JP7693604B2 (ja) 2022-03-31 2025-06-17 東京エレクトロン株式会社 基板処理装置
US20240006157A1 (en) * 2022-07-01 2024-01-04 Taiwan Semiconductor Manufacturing Company Methods and systems for dry etching
KR20250014860A (ko) * 2023-07-21 2025-02-03 세메스 주식회사 샤워헤드 어셈블리를 포함하는 기판 처리 장치

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP4221847B2 (ja) * 1999-10-25 2009-02-12 パナソニック電工株式会社 プラズマ処理装置及びプラズマ点灯方法
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6390905B1 (en) * 2000-03-31 2002-05-21 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP4567148B2 (ja) * 2000-06-23 2010-10-20 東京エレクトロン株式会社 薄膜形成装置
CN1328766C (zh) * 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
JP2002294453A (ja) * 2001-03-29 2002-10-09 Anelva Corp 基板処理装置
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
KR100702002B1 (ko) 2001-06-25 2007-03-30 삼성전자주식회사 반도체 웨이퍼 처리 장치용 샤워헤드
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP3982678B2 (ja) * 2002-02-27 2007-09-26 東京エレクトロン株式会社 プラズマ処理装置
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
CN1223704C (zh) * 2002-08-19 2005-10-19 乐金电子(天津)电器有限公司 利用等离子技术的高分子中和膜制造设备及其制造方法
US7494560B2 (en) * 2002-11-27 2009-02-24 International Business Machines Corporation Non-plasma reaction apparatus and method
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR100526928B1 (ko) 2003-07-16 2005-11-09 삼성전자주식회사 식각장치
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US7442114B2 (en) * 2004-12-23 2008-10-28 Lam Research Corporation Methods for silicon electrode assembly etch rate and etch uniformity recovery
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US7862682B2 (en) * 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8313610B2 (en) * 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
US8418649B2 (en) * 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus

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