JP6335538B2 - プラズマ処理室用のガス分配部材を製造する方法 - Google Patents
プラズマ処理室用のガス分配部材を製造する方法 Download PDFInfo
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- 238000009826 distribution Methods 0.000 title claims description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims description 219
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 117
- 229910052799 carbon Inorganic materials 0.000 claims description 113
- 238000000034 method Methods 0.000 claims description 69
- 239000000463 material Substances 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 18
- 238000003754 machining Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005553 drilling Methods 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 45
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- 239000000758 substrate Substances 0.000 description 21
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Description
[適用例1]半導体プラズマ処理室内に処理ガスを供給するSi含有ガス分配部材を製造する方法であって、
該Si含有ガス分配部材の内部空洞構造に対応する形状に炭素部材を成形し、
Si含有材料で前記成形炭素部材の周囲に所定の厚さのシェルを形成するように、前記成形炭素部材上にSi含有材料を堆積させ、
前記Si含有シェルを、該Si含有ガス分配部材の構造に機械加工することであって、該機械加工により、該Si含有ガス分配部材の内部領域にある前記成形炭素部材の一部を露出させるようにガス入口および出口孔を形成し、
炭素と反応するガスによって炭素原子を解離させて、該Si含有ガス分配部材の内部領域から前記成形炭素部材を除去し、これにより、該Si含有ガス分配部材の内部領域に成形された内部空洞を残して、該Si含有ガス分配部材の内部領域から排除する
方法。
[適用例2]前記成形炭素部材上へのSi含有材料の堆積は、前記成形炭素部材を該成形炭素部材の第1の側で支持して、該成形炭素部材の第2の側にSi含有材料を堆積させることと、前記成形炭素部材を回転させて、Si含有材料が堆積された前記成形炭素部材の前記第2の側で支持し、前記成形炭素部材の前記第1の側にSi含有材料を堆積させることと、を含む適用例1に記載の方法。
[適用例3]前記成形炭素部材は、該Si含有ガス分配部材の内部空洞構造に対応する空間的関係で成形および配置される複数の分離された炭素要素を含み、該複数の分離された炭素要素は、複数の流体的に分離されたガスゾーンを該Si含有ガス分配部材内に形成するように配置され、
このとき、前記成形および配置された炭素要素上へのSi含有材料の堆積は、各炭素要素を第1の側で支持して、該成形および配置された炭素要素のそれぞれの第2の側にSi含有材料を堆積させることで、該成形および配置された炭素要素の前記第2の側に前記Si含有シェルの一部を形成することと、該成形および配置された炭素要素を回転させて、該成形および配置された炭素要素の前記Si含有シェルの前記一部が形成された前記第2の側で支持し、該成形および配置された炭素要素のそれぞれの第1の側にSi含有材料を堆積させることで、該成形および配置された炭素要素上に前記Si含有シェルを形成することと、を含む適用例1に記載の方法。
[適用例4]該Si含有ガス分配部材の内部で流体的に分離された前記ガスゾーンは、流体的に分離されたそれぞれのガスゾーンによって処理ガスの異なる放射状または環状の分布が可能となり得るように配置される適用例3に記載の方法。
[適用例5]2つの分離された炭素要素が、該Si含有ガス分配部材の内部で流体的に分離された2つのガスプレナムを含む内部空洞の対応する形状に成形される適用例3に記載の方法。
[適用例6]前記Si含有材料の堆積工程は、CVD法、PECVD法、またはコールドスプレー法により実施される適用例1に記載の方法。
[適用例7]前記成形炭素部材の除去は、アッシング処理を含む適用例1に記載の方法。
[適用例8]前記成形炭素部材の除去は、該Si含有ガス分配部材の内部領域から炭素を除去するために、前記Si含有コーティングされた炭素部材を酸素含有雰囲気中で加熱することを含む適用例1に記載の方法。
[適用例9]前記炭素部材の除去は、該Si含有ガス分配部材の内部領域から炭素を除去するために、前記Si含有コーティングされた炭素部材を水素含有雰囲気中で加熱することを含む適用例1に記載の方法。
[適用例10]各ガス入口および出口孔が、ドリル加工などの機械加工技術により作製される適用例1に記載の方法。
[適用例11]さらに各ガス入口および出口孔のレーザ孔あけによって、各ガス入口および出口孔の透過性が所定の透過率に調整される適用例10に記載の方法。
[適用例12]前記半導体プラズマ処理室は、プラズマエッチング室である適用例1に記載の方法。
[適用例13]該Si含有ガス分配部材は、バッキングプレート、熱制御プレート、またはガス分配プレートである適用例1に記載の方法。
[適用例14]前記成形炭素部材は黒鉛で形成される適用例1に記載の方法。
[適用例15]前記Si含有材料は、SiCである適用例1に記載の方法。
[適用例16]半導体プラズマ処理室用のシャワーヘッド電極アセンブリであって、
適用例1に記載の方法により製造されるSi含有ガス分配部材と、シリコンのシャワーヘッド電極とを含み、
前記Si含有ガス分配部材は、前記シリコンのシャワーヘッド電極のガス孔のパターンに一致するガス孔のパターンを有する
シャワーヘッド電極アセンブリ。
[適用例17]前記Si含有ガス分配部材は、ガス分配プレート、熱制御プレート、またはバッキングプレートである適用例16に記載のシャワーヘッド電極アセンブリ。
[適用例18]適用例16に記載のシャワーヘッド電極アセンブリを備えるプラズマ処理室内で半導体基板を処理する方法であって、
プラズマ処理装置に半導体基板を搬入して、該基板を基板サポート上で支持し、
前記Si含有ガス分配部材を通して、処理ガスを前記プラズマ処理室内に導入し、
前記処理ガスをプラズマ状態に励起し、
前記半導体基板を前記プラズマで処理する
方法。
[適用例19]前記処理は、前記基板上への導電材料または誘電材料の堆積を含む適用例18に記載の方法。
[適用例20]前記処理は、前記基板上の層をプラズマエッチングすることを含み、前記層は、金属、誘電体、またはフォトレジストである適用例18に記載の方法。
[適用例21]前記プラズマエッチングは、フッ化炭素および/またはハイドロフルオロカーボン・エッチングガスを用いて、誘電体材料に開口をエッチングすることを含む適用例20記載の方法。
Claims (15)
- 半導体プラズマ処理室内に処理ガスを供給するSi含有ガス分配部材を製造する方法であって、
該Si含有ガス分配部材の内部空洞構造に対応する形状に炭素部材を成形し、
前記成形された炭素部材である成形炭素部材の周囲に、Si含有材料が所定の厚さのシェルを形成するように、前記成形炭素部材上にSi含有材料を堆積させ、
Si含有の前記シェルを、該Si含有ガス分配部材の構造に機械加工することであって、該機械加工により、該Si含有ガス分配部材の内部領域にある前記成形炭素部材の一部を露出させるようにガス入口および出口孔を形成し、
炭素と反応するガスによって炭素原子を解離させて、該Si含有ガス分配部材の内部領域から前記成形炭素部材を除去し、これにより、該Si含有ガス分配部材の内部領域に成形された内部空洞を残して、該Si含有ガス分配部材の内部領域から排除する
方法。 - 前記成形炭素部材上へのSi含有材料の堆積は、前記成形炭素部材を該成形炭素部材の第1の側で支持して、該成形炭素部材の第2の側にSi含有材料を堆積させることと、前記成形炭素部材を回転させて、Si含有材料が堆積された前記成形炭素部材の前記第2の側で支持し、前記成形炭素部材の前記第1の側にSi含有材料を堆積させることと、を含む請求項1に記載の方法。
- 前記成形炭素部材は、該Si含有ガス分配部材の内部空洞構造に対応する空間的関係で成形および配置される複数の分離された炭素要素を含み、該複数の分離された炭素要素は、複数の流体的に分離されたガスゾーンを該Si含有ガス分配部材内に形成するように配置され、
このとき、前記成形および配置された炭素要素上へのSi含有材料の堆積は、各炭素要素を第1の側で支持して、該成形および配置された炭素要素のそれぞれの第2の側にSi含有材料を堆積させることで、該成形および配置された炭素要素の前記第2の側に前記Si含有シェルの一部を形成することと、該成形および配置された炭素要素を回転させて、該成形および配置された炭素要素の前記Si含有シェルの前記一部が形成された前記第2の側で支持し、該成形および配置された炭素要素のそれぞれの第1の側にSi含有材料を堆積させることで、該成形および配置された炭素要素上に前記Si含有シェルを形成することと、を含む請求項1に記載の方法。 - 該Si含有ガス分配部材の内部で流体的に分離された前記ガスゾーンは、流体的に分離されたそれぞれのガスゾーンによって処理ガスの異なる放射状または環状の分布が可能となり得るように配置される請求項3に記載の方法。
- 2つの分離された炭素要素が、該Si含有ガス分配部材の内部で流体的に分離された2つのガスプレナムを含む内部空洞の対応する形状に成形される請求項3に記載の方法。
- 前記Si含有材料の堆積工程は、CVD法、PECVD法、またはコールドスプレー法により実施される請求項1に記載の方法。
- 前記成形炭素部材の除去は、アッシング処理を含む請求項1に記載の方法。
- 前記成形炭素部材の除去は、該Si含有ガス分配部材の内部領域から炭素を除去するために、Si含有コーティングされた炭素部材を酸素含有雰囲気中で加熱することを含む請求項1に記載の方法。
- 前記炭素部材の除去は、該Si含有ガス分配部材の内部領域から炭素を除去するために、Si含有コーティングされた炭素部材を水素含有雰囲気中で加熱することを含む請求項1に記載の方法。
- 各ガス入口および出口孔が、機械加工技術により作製される請求項1に記載の方法。
- さらに各ガス入口および出口孔のレーザ孔あけによって、各ガス入口および出口孔の透過性が所定の透過率に調整される請求項10に記載の方法。
- 前記半導体プラズマ処理室は、プラズマエッチング室である請求項1に記載の方法。
- 該Si含有ガス分配部材は、バッキングプレート、熱制御プレート、またはガス分配プレートである請求項1に記載の方法。
- 前記成形炭素部材は黒鉛で形成される請求項1に記載の方法。
- 前記Si含有材料は、SiCである請求項1に記載の方法。
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