TW201443273A - 電漿處理室用氣體分配構件之形成方法 - Google Patents
電漿處理室用氣體分配構件之形成方法 Download PDFInfo
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Abstract
一種製造用於半導體電漿處理室之含矽的氣體分配構件的方法,包含:將碳構件成形為含矽氣體分配構件的內腔結構。該方法包含在所形成的碳構件上沉積含矽材料,使得含矽材料形成圍繞著所形成碳構件的外殼。將含矽外殼加工成含矽的氣體分配構件之結構,其中加工步驟形成了進氣口及出氣孔,曝露出在含矽的氣體分配構件內部區域中的所形成碳構件的一部分。該方法從該含矽之氣體分配構件的該內部區域移除該形成的碳構件,此步驟係利用與碳起反應的氣體,分離碳原子,藉此自該含矽之氣體分配構件的該內部區域移除碳原子,在該含矽之氣體分配構件的該內部區域中留下一成形的內腔。
Description
本發明係關於電漿處理設備,且更具體而言係關於電漿處理室用氣體分配構件之形成方法。
用於處理半導體基板(如:半導體晶圓)之電漿處理設備可以包含一個以上的氣體分配構件,其中氣體係經由氣體分配構件流進電漿處理室中。例如,氣體分配構件可為噴淋頭電極組件的元件,該噴淋頭電極組件係設置於該腔室中,以在該腔室中分配製程氣體於處理中之半導體基板的表面上。現今的氣體分配構件係由將二個鋁表面硬焊在一起,並且對該鋁表面加以陽極處理所建構而成,然而,當使用鹵素氣體時硬焊材料的溢流部易受腐蝕,這於處理期間造成半導體晶圓污染。因此,抗腐蝕的氣體分配構件係所需的。
本文揭露一種會將製程氣體供應至半導體電漿處理室的含矽(Si)之氣體分配構件的形成方法。該方法包含:將碳構件形成為對應含矽之氣體分配構件之內腔結構的形狀;及在該形成的碳構件上沉積含矽材料,使得含矽材料形成圍繞著該形成的碳構件之預定厚度的外殼。接著,將該含矽外殼加工成含矽之氣體分配構件的結構,其中加工步驟形成了進氣口及出氣孔,該進氣口及出氣孔曝露出含矽的氣體分配構件內部區域中之該形成的碳構件的一部分;及從該含矽之氣體分配構件的該內部區域移除該形成的碳構件,此步驟係利用與碳起反應的氣體,分離碳原子,藉此自該含矽之氣體分配構件的該內部區域移除碳原子,在該含矽之氣體分配構件的該內部區域中留下一成形的內腔。
本文揭露一種製造含矽之氣體分配構件(如:SiC氣體分配構件)的方法,該含矽的氣體分配構件具有用於對電漿處理室內部供應製程氣體的內腔結構。當使用於此處,含矽表示包含Si的材料。例如:該材料可以為高純度的Si、碳化矽(SiC)、或氧化矽。電漿處理室可以包含一個以上的氣體分配構件,如:氣體分配板、背襯板等。一示例性類型的電漿處理設備為電容耦合電漿處理室。電容耦合電漿處理室包含一真空室,該真空室包含:一頂部電極;及一基板支持部,其中基板(如:半導體晶圓)於電漿處理期間被支持在該支持部上。基板支持部包含:一底部電極;及一夾持機構,如:用於夾持基板的機械夾盤、或靜電夾盤(ESC)。頂部電極(噴淋頭電極)可為用於對真空室內部分配製程氣體的噴淋頭電極組件之一部分。噴淋頭電極組件可以包含:一個以上的氣體分配構件,如:氣體分配板;背襯構件;熱控板;及/或一個以上之垂直間隔的擋環,其位在背襯構件下方及噴淋頭電極上方,控制對真空室之製程氣體供給。
較佳地,一個以上的氣體分配構件係由含矽材料製成,為導熱性、導電性、及抗腐蝕性和抗磨損性的。為提供導熱性及導電性的氣體分配構件,如此的構件較佳由碳化矽(SiC)所製成,且更佳地,含矽的氣體分配構件係由CVD SiC所製成。或者,導熱性及導電性之含矽的氣體分配構件可由電漿輔助化學汽相沉積(PECVD)法或冷噴鍍(cold spraying)法製成。CVD SiC的優點包含:高導熱性(如:CVD SiC的導熱性為燒結SiC之導熱性的兩倍)、與定制的電阻性(如:SiC之電阻可以在導電性至半導體性之間變化)。對氣體分配構件而言,使用CVD SiC的另一優點係能夠在真空室裡獲得整個構件表面上之高度均勻的溫度分佈。在將構件維持在足夠高的溫度下以最小化累積在構件曝露面上之聚合物的處理情形中,就溫度控制及最小化顆粒產生的觀點來看,CVD SiC之使用係有利的。此外,選擇SiC來作為氣體分配構件的材料,允許構件在可能含有氧、鹵素、及/或氫氟碳化合物之氣體電漿的環境中高度抵抗化學濺鍍(經濺鍍之SiC形成Si及C,其可能不會影響元件效能)及蝕刻,以避免腐蝕、及/或崩解、及與其相關的之產物粒子的產生。
在處理期間,含矽的氣體分配構件(如:SiC氣體分配構件)可能會曝露於腐蝕性的鹵素氣體,其中腐蝕性的鹵素氣體在於電漿處理室內部中被激發成電漿前,會通過含矽的氣體分配構件。此外,一個以上的含矽之氣體分配構件可用於在基板平面上方之真空室的空間中控制製程氣體流動的空間分佈。例如,含矽的氣體分配構件可為一SiC背襯板,該SiC背襯板包含:一內腔結構(如:一個以上的氣體充氣部);及一陣列之特定直徑的進氣口和出氣孔,其在SiC背襯板之內腔結構(即:氣體充氣部)與入口或出口表面間軸向延伸,其中將SiC背襯板中之出氣孔之圖案與下層噴淋頭電極中之注氣孔之圖案對準。可變化與噴淋頭電極中之注氣孔對準的SiC背襯板中之出氣孔的空間分佈,以最佳化欲蝕刻之層(如:光阻層、二氧化矽層、及晶圓上之底層材料)的蝕刻均勻性。
圖1說明一噴淋頭電極組件的實施例,該噴淋頭電極組件包含:一含矽的氣體分配構件、及一噴淋頭電極200,其中該含矽的氣體分配構件形成一SiC背襯構件220,該SiC背襯構件220包含:一內腔結構,其位於噴淋頭電極200的背面。SiC背襯構件220較佳為噴淋頭電極組件的一部份,如同共同轉讓美國專利申請案第2012/0175062號中所描述的凸輪閉鎖之噴淋頭電極組件,且其內容於此藉由參照整體納入本案揭示內容。
SiC背襯構件220可以凸輪閉鎖或接觸螺栓225(contact bolt)固定於噴淋頭電極200,或者以彈性連接方式附接於噴淋頭電極200的背面(例如:見共同轉讓美國專利案第6,194,322 B1及6,073,577號,其內容於此藉由參照其整體納入本案揭示內容)。SiC背襯構件220包含:出氣孔226,其與噴淋頭電極200中之氣體通道206對準,以提供通過其中的氣流。
較佳地,SiC背襯構件220包含一個以上的充氣部,以引導氣體通過噴淋頭電極200背面處的出氣孔226。例如:在背襯構件220中,一中央充氣部可被環形充氣部圍繞,使得可控制在下層基板上方之真空室空間中之製程氣體流動的空間分佈,以可獨立於被導向下層基板外部(邊緣)區域之氣流而控制被導向下層基板中央區域之氣流。如圖1所示,中央充氣部250a被二個流體隔離的環形充氣部250b、及250c圍繞,而形成了背襯構件220的內腔結構。該等充氣部在SiC背襯構件220中係被整體壁520(integral wall)分隔開來,其中整體壁520可形成同心環,同心環會界定SiC背襯構件220之內腔結構中的隔離氣體區域。然而,在另一實施例中,可在整體壁520中設置通道,使得該等通道允許在SiC背襯構件220中所形成之二個以上充氣部間的氣體連通。
在本文揭露的另一實施例中,含矽的氣體分配構件係熱控板,安裝在電漿處理室(如:用於電漿蝕刻半導體基板的電容耦合電漿處理室)之噴淋頭電極組件。圖2為電容耦合電漿處理室之上部電極組件500的橫剖面圖,該電容耦合電漿室包含一含矽的氣體分配構件,其中該含矽的氣體分配構件形成包含一內腔結構的熱控板510。該熱控板510較佳由SiC製成。該SiC熱控板510的內腔結構會形成充氣部,以將製程氣體引導通過於SiC熱控板510下表面中的出氣孔526,並經由噴淋頭電極中之經對準的氣體通道506通往電漿處理室中。可為盤形的中央充氣部550a係被第一外側環形充氣部550b、及第二外側環形充氣部550c包圍。中央充氣部550a、及第一和第二外側環形充氣部550b、550c係由整體壁520所分隔開來。在SiC熱控板510中分隔開充氣部550a、550b、550c的整體壁520可形成同心環,該同心環在SiC熱控板510之內腔結構中界定出隔離的氣體區域。然而,在另一實施例中,可設置通道於整體壁520中,使得該等通道允許在SiC熱控板510中所形成之二個以上的充氣部間的氣體連通。
圖3說明含矽的氣體分配構件之另一實施例,其中含矽的氣體分配構件形成一徑向或側向延伸的圓柱形SiC氣體分配板505,該圓柱形的SiC氣體分配板包含由徑向延伸充氣部所形成的內腔結構。該內腔結構較佳形成多個流體隔離的徑向氣體充氣部,如:由徑向充氣部160a、160b所形成者。SiC氣體分配板505更可包含:一環形分配管151,其延伸進SiC氣體分配板505的上表面;及軸向延伸的出氣口115,其中分配管151與軸向延伸的出氣口115係與徑向充氣部160a流體連通。SiC氣體分配板505也可包含:一圓柱形盲孔152,延伸進SiC氣體分配板505的上表面;及軸向延伸的出氣口122及125,其中圓柱形盲孔152與軸向延伸的出氣口122、125係與徑向充氣部160b為流體連通。SiC氣體分配板505可使用氣體饋入部(圖未顯示)、分配管151、圓柱形盲孔152、徑向充氣部160a、160b及出氣口115、122、125來對一選用性的背襯構件、或位於噴淋頭電極(圖未顯示)背面之一個以上的充氣部提供氣體的分配。因此,不同的製程氣體化學品及/或流率可施加至整個處理中之基板之一個以上區域。在另一實施例中,環形充氣部160a、160b可接收來自徑向氣體通道(圖未顯示)之氣體,以對SiC氣體分配板505邊饋入(edge fed)製程氣體。
現在將討論製造包含一內腔結構之含矽的氣體分配構件之方法的實施例。首先,對一碳構件(較佳為石墨)進行成形步驟,該碳構件經歷成形步驟,使得含矽之氣體分配構件內腔結構的對應形狀從該碳構件形成。於是,具有大於一個充氣部之含矽的氣體分配構件需要對應每個欲成形充氣部內腔結構的獨立碳構件。實質上,將碳構件加以成形,使得它們符合含矽的氣體分配構件中所包含的氣體充氣部之形狀。形狀可包含欲在含矽的氣體分配構件之內腔結構中形成環形或徑向氣體充氣部的環形結構或放射形結構。在較佳實施例中,流體隔離的氣體充氣部係包含在含矽的氣體分配構件中。當需要大於一個的流體隔離氣體充氣部時,將該等碳構件彼此互相隔離而加以形成,以對應含矽之氣體分配構件中的多數個流體隔離的氣體充氣部。在較佳實施例中,將每個隔離的經成形碳構件加以塑形,使得其形成一個個別獨立的氣體充氣部。含矽的氣體分配構件之其他的實施例可包含以另一結構所形成之獨立的氣體充氣部,例如(但非僅限於此):如圖3中所說明之會與軸向延伸的氣體通道連通的徑向氣體充氣部。
在已將碳構件成形為氣體分配構件之對應內腔結構後,進行含矽材料的沉積步驟。含矽材料可以較佳以CVD製程沉積於所形成的碳構件上,並生長成一預定的厚度,該厚度會形成圍繞著所形成碳構件的含矽外殼。或者,含矽材料可以PECVD製程或冷噴鍍製程(cold spray process)沉積。較佳地,各個形成的碳構件以相對於其他所形成的碳構件的空間結構受支撐於第一側。將該空間結構加以排列,以形成氣體分配構件的對應內腔結構。以含矽材料塗覆每個所形成碳構件的第二側,以形成CVD沉積的含矽外殼。接著,可將包含CVD沉積之含矽外殼部分的所形成碳構件加以轉向,且支撐於每個所形成碳構件第二側上之一部份的CVD沉積含矽外殼上,使得CVD含矽材料可沉積在每個所形成碳構件的剩餘暴露面上。在含矽外殼形成後,可於加工步驟期間,將含矽的氣體分配構件加工成氣體分配構件的結構。加工步驟包含:將含矽的外殼加工成含矽的氣體分配構件的對應外部結構;及製作進氣口與出氣孔。加工進氣口與出氣孔較佳在含矽的氣體分配構件之內部區域中曝露出所形成碳構件的一部分。接著可在移除步驟中,從含矽的氣體分配構件之內部區域中移除所形成的碳構件。移除步驟包含:使碳構件與氣體反應,使得碳構件之碳原子氧化,而可藉此從含矽的氣體分配構件之內部區域中移除碳構件。在碳構件移除後,將留下含矽的氣體分配構件,其中含矽的氣體分配構件之內部區域包含對應的內腔結構。
含矽的氣體分配構件較佳包含內部幾何結構,使得內腔結構可設置在含矽的氣體分配構件之內部區域中。在較佳的實施例中,在含矽的氣體分配構件內形成包含二個隔離的氣體充氣部的內腔結構,使得每個氣體充氣部可允許電漿室中製程氣體的差異性徑向分配。吾人應理解在另一較佳的實施例中,可形成單一氣體充氣部或三個以上的氣體充氣部。亦較佳的是,每個氣體充氣部在含矽的氣體分配構件中為獨立的,即:流體隔離於其他的氣體充氣部。
可以任一合適的技術進行加工步驟,如:研磨、研光、搪磨、超音波加工、水噴式或磨料噴射加工、雷射加工、放電加工、離子束加工、電子束加工、化學加工、電化學加工等。在較佳的實施例中,機械孔的製造技術(如:鑽孔法)係用於在含矽的氣體分配構件中形成進氣口及出氣孔。在一更佳的實施例中,機械孔的製造技術係用於在含矽的氣體分配構件中形成全部的進氣口及出氣孔的主要部份,接著,一更精確的技術(如:雷射鑽孔法)係用於在含矽的氣體分配構件中調整進氣口及出氣孔的穿透性。在該方法的較佳實施例中,可將含矽的氣體分配構件之外表面以例如研磨及/或拋光等加工,以在碳構件的移除之前及/或之後,實現所期望的拋光度。
其他可使用的示例性含矽的氣體分配構件之加工技術係描述在共同轉讓美國專利案第7,480,974,號中,且其內容於此藉由參照整體納入本案揭示內容。
可在任一合適的容器(如:高溫烘箱或熔爐)加熱具有暴露碳表面之含矽的氣體分配構件,來移除在含矽的氣體分配構件的內部區域中之所形成的碳構件(如:石墨構件)。容器較佳具有一含氧氛圍,該氛圍可包含(但非僅限於此):O2、空氣、水蒸氣、或其混合。在較佳的實施例中,將容器密封起來,並將含氧的氣體(如:空氣)經由氣體供應系統供應至容器中。可將含矽的氣體分配構件在容器中維持在大氣壓下,或者,可將容器中之壓力降低到次大氣壓。
由於以在氧存在下暴露碳構件的氛圍加熱含矽的氣體分配構件,可藉由將碳轉變成二氧化碳(CO2)氣體及/或一氧化碳氣體,從含矽外殼的內部中來化學性地移除所形成的碳構件。實質上,在燃燒反應中,碳會和氧起反應,如此情形造成碳燃燒。在另一實施例中,包含所形成碳構件的SiC氣體分配構件可於氫存在的情況下加熱,其中所形成的碳構件可轉變成甲烷(CH4)氣體。因此,所形成的碳構件可從固體轉變成氣體,而藉此從含矽的氣體分配構件之內部區域中排出。在另一實施例中,形成的碳構件可從固體轉變成液體,而藉此從含矽的氣體分配構件之內部區域中移除。
較佳將含氧的氛圍維持在一溫度下,該溫度對氧化碳構件之碳原子(即:將碳構件轉換成CO、CO2、或其混合物)係有效的,但該溫度係足夠低以實質地防止氧化例如SiC的含矽材料(即:不利地影響含矽材料之機械及/或物理性質)。較佳地,處理容器中之含氧氛圍的溫度係約600℃到約1200℃間,且更佳為約800℃到約900℃間。將含矽的氣體分配構件於含氧的氛圍中處理一段時間(較佳為約2小時到約12小時),該時間對從含矽之氣體分配構件(如:SiC的氣體分配構件)的內部區域中移除全部或至少實質全部的碳係有效的。
由含矽之氣體分配構件的內部區域中移除所形成的碳構件(如:形成的石墨構件)之另一較佳的方法包含:使用氧電漿處理該構件,以從內部區域中移除全部或實質全部的碳。例如,SiC的氣體分配構件可在半導體基板處理設備的灰化腔室中處理,以移除形成的碳構件。在移除步驟期間,包含形成的碳構件於內部區域之SiC氣體分配構件的溫度範圍可例如在約200℃到約300℃間。在一些實施例中,電漿灰化處理可在次大氣壓下進行。在一些實施例中,壓力可係約100mbar以下。
雖然已藉由其特定的實施例詳細說明本文揭露之實施例,但熟習本項技藝之人士應清楚瞭解,在不脫離所附之申請專利範圍所界定之權利範圍的情況下,可對本發明進行各種改變及修改及採用等效的裝置。
115...出氣口
122...出氣口
125...出氣口
151...分配管
152...盲孔
160a...徑向充氣部
160b...徑向充氣部
200...噴淋頭電極
206...氣體通道
220...背襯構件
225...凸輪閉鎖/接觸螺栓
226...出氣孔
250a...中央充氣部
250b...環形充氣部
250c...環形充氣部
500...上部電極組件
505...氣體分配板
506...氣體通道
510...熱控板
520...整體壁
526...出氣孔
550a...中央充氣部(充氣部)
550b...環形充氣部(充氣部)
550c...環形充氣部(充氣部)
圖1說明一SiC背襯構件的橫剖面圖,該SiC背襯構件可按照本文揭露的實施例製造。
圖2說明一SiC熱控板的橫剖面圖,該SiC熱控板可按照本文揭露的實施例製造。
圖3說明一含矽的氣體分配構件之示例性實施例,該含矽的氣體分配構件可按照本文揭露的實施例製造。
200...噴淋頭電極
206...氣體通道
220...背襯構件
225...凸輪閉鎖/接觸螺栓
226...出氣孔
250a...中央充氣部
250b...環形充氣部
250c...環形充氣部
520...整體壁
Claims (21)
- 一種製造含矽之氣體分配構件的方法,該含矽之氣體分配構件供應製程氣體至半導體電漿處理腔室中,該方法包含: 成形步驟:將一碳構件形成為對應該含矽之氣體分配構件之內腔結構的形狀; 含矽材料的沉積步驟:在該形成的碳構件上沉積一含矽材料,使得該含矽材料形成圍繞著該形成的碳構件之預定厚度的一外殼; 加工步驟:將含矽的該外殼加工成該含矽之氣體分配構件的結構,其中該加工步驟形成進氣口及出氣孔,其曝露出該含矽之氣體分配構件之一內部區域中之一部分的該形成的碳構件;及 移除步驟:從該含矽之氣體分配構件的該內部區域移除該形成的碳構件,此步驟係利用與碳起反應的氣體,分離碳原子,藉此自該含矽之氣體分配構件的該內部區域移除碳原子,在該含矽之氣體分配構件的該內部區域中留下一成形的內腔。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該含矽材料的沉積步驟包含:在該形成的碳構件的第一側支撐該形成的碳構件且在該形成的碳構件之一第二側上沉積該含矽材料;轉動該形成的碳構件;及接著在該形成的碳構件之該第二側支撐所沉積的含矽材料且在該形成的碳構件的該第一側上沉積該含矽材料。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該形成的碳構件包含複數個不相連的碳元件,該複數個不相連的碳元件係以對應該含矽之氣體分配構件之該內腔結構的空間關係形成及排列,排列該複數個不相連的碳元件,使得該複數個不相連的碳元件在該含矽之氣體分配構件中形成超過一個的流體隔離氣體區域,其中在所形成及排列的該等碳元件上沉積該含矽材料的步驟包含:支撐每個碳元件的一第一側,且在所形成及排列的該等碳元件之每個第二側上沉積該含矽材料,在所形成及排列的該等碳元件的該第二側上形成含矽外殼的一部分;將所形成及排列的該等碳元件轉向;及接著在所形成及排列的該等碳元件的該第二側支撐含矽外殼的該部分,且在所形成及排列之該等碳元件之每個第一側上沉積該含矽材料,在所形成及排列的該等碳元件上形成含矽外殼。
- 如申請專利範圍第3項之製造含矽之氣體分配構件的方法,其中排列在該含矽之氣體分配構件內部的該等流體隔離氣體區域,使得每個流體隔離氣體區域允許不同的製程氣體的徑向或環形分配。
- 如申請專利範圍第3項之製造含矽之氣體分配構件的方法,其中將二個不相連之碳元件成形為在該含矽之氣體分配構件內之具有二個流體隔離的氣體充氣部的一內腔的對應形狀。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該含矽材料的沉積步驟係以CVD製程、PECVD製程、或冷噴鍍製程進行。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該形成的碳構件之移除步驟包含灰化製程。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該形成的碳構件之移除步驟包含在含氧的氛圍中加熱經含矽塗佈的碳構件,以從該含矽之氣體分配構件的該內部區域中移除碳。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該碳構件之移除步驟包含在含氫的氛圍中加熱經含矽塗佈的碳構件,以從該含矽之氣體分配構件的該內部區域中移除碳。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中每個進氣口及出氣孔係以機械式加工製造技術製造。
- 如申請專利範圍第10項之製造含矽之氣體分配構件的方法,其中進一步地雷射鑽孔每個進氣口及出氣孔,以調整每個進氣口及出氣孔的穿透性到一預定的穿透性。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該半導體電漿處理腔室係電漿蝕刻室。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該含矽之氣體分配構件係背襯構件、熱控板、或氣體分配板。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該形成的碳構件係由石墨形成。
- 如申請專利範圍第1項之製造含矽之氣體分配構件的方法,其中該含矽材料係SiC。
- 一種噴淋頭電極組件,用於半導體電漿處理室,該噴淋頭電極組件包含:以申請專利範圍第1項的方法所製成的該含矽之氣體分配構件、以及一矽噴淋頭電極,其中該含矽之氣體分配構件具有與該矽噴淋頭電極的氣孔圖案匹配的一氣孔圖案。
- 如申請專利範圍第16項之噴淋頭電極組件,其中該含矽之氣體分配構件係氣體分配板、熱控板、或背襯板。
- 一種在電漿處理室處理半導體基板的方法,該電漿處理室包含申請專利範圍第16項之該噴淋頭電極組件,該方法包含: 將一半導體基板輸送到該電漿處理室中,及將該半導體基板支撐在一基板支持部上; 經由該含矽之氣體分配構件,將一製程氣體導入該電漿處理室中; 將該製程氣體激發成一電漿的狀態;及 處理步驟:以該電漿處理該半導體基板。
- 如申請專利範圍第18項之在電漿處理室處理半導體基板的方法,其中該處理步驟包含該基板上之導電材料或介電材料的沉積。
- 如申請專利範圍第18項之在電漿處理室處理半導體基板的方法,其中該處理步驟包含電漿蝕刻該半導體基板上之一層,其中該層為金屬層、介電層、或光阻層。
- 如申請專利範圍第20項之在電漿處理室處理半導體基板的方法,其中該電漿蝕刻的步驟包含使用氟碳化物及/或氫氟碳化物蝕刻氣體於介電材料中蝕刻出一開口。
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US20110002103A1 (en) * | 2009-07-01 | 2011-01-06 | Wen-Yi Lee | Interlocking Structure For Memory Heat Sink |
US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
KR200464037Y1 (ko) * | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
US8470127B2 (en) | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
JP5808697B2 (ja) * | 2012-03-01 | 2015-11-10 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置及びドライエッチング方法 |
US9058960B2 (en) * | 2012-05-09 | 2015-06-16 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
US8975817B2 (en) * | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
US9580360B2 (en) * | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
-
2013
- 2013-02-13 US US13/766,096 patent/US8883029B2/en not_active Expired - Fee Related
-
2014
- 2014-02-13 TW TW103104796A patent/TWI662148B/zh active
- 2014-02-13 KR KR1020140016848A patent/KR20140102154A/ko not_active Application Discontinuation
- 2014-02-13 JP JP2014025393A patent/JP6335538B2/ja active Active
- 2014-10-09 US US14/510,681 patent/US20150024582A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11694908B2 (en) | 2020-10-22 | 2023-07-04 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
TWI811815B (zh) * | 2020-10-22 | 2023-08-11 | 美商應用材料股份有限公司 | 用於半導體處理室的氣箱 |
US12057325B2 (en) | 2020-10-22 | 2024-08-06 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
Also Published As
Publication number | Publication date |
---|---|
KR20140102154A (ko) | 2014-08-21 |
US8883029B2 (en) | 2014-11-11 |
JP6335538B2 (ja) | 2018-05-30 |
TWI662148B (zh) | 2019-06-11 |
US20140227866A1 (en) | 2014-08-14 |
US20150024582A1 (en) | 2015-01-22 |
JP2014160819A (ja) | 2014-09-04 |
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