US20150024582A1 - Method of making a gas distribution member for a plasma processing chamber - Google Patents
Method of making a gas distribution member for a plasma processing chamber Download PDFInfo
- Publication number
- US20150024582A1 US20150024582A1 US14/510,681 US201414510681A US2015024582A1 US 20150024582 A1 US20150024582 A1 US 20150024582A1 US 201414510681 A US201414510681 A US 201414510681A US 2015024582 A1 US2015024582 A1 US 2015024582A1
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- United States
- Prior art keywords
- gas distribution
- carbon
- distribution member
- showerhead electrode
- electrode assembly
- Prior art date
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- 238000009826 distribution Methods 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000003754 machining Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 189
- 230000008569 process Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 3
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- 239000010703 silicon Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 44
- 229910010271 silicon carbide Inorganic materials 0.000 description 43
- 238000004891 communication Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 239000012530 fluid Substances 0.000 description 2
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- 239000007924 injection Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000002485 combustion reaction Methods 0.000 description 1
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- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Definitions
- the invention relates to plasma processing apparatuses and more specifically to a method of making a gas distribution member for a plasma processing chamber.
- Plasma processing apparatuses for processing semiconductor substrates, such as semiconductor wafers can include one or more gas distribution members through which gas is flowed into a plasma processing chamber.
- the gas distribution member can be a component of a showerhead electrode assembly positioned in the chamber to distribute process gas over a surface of a semiconductor substrate being processed in the chamber.
- Current gas distribution members are constructed from brazing two aluminum surfaces together and anodizing the aluminum surfaces, however, overflow of the brazing material is susceptible to corrosion when using halogen gases which may lead to contamination of semiconductor wafers during processing. Therefore a corrosion resistant gas distribution member is desired.
- a method of making a silicon (Si) containing gas distribution member which supplies process gas into a semiconductor plasma processing chamber.
- the method comprises forming a carbon member into a form corresponding to an internal cavity structure of the Si containing gas distribution member, and depositing Si containing material on the formed carbon member such that the Si containing material forms a shell of a predetermined thickness around the formed carbon member.
- FIG. 1 illustrates a cross section of a SiC backing member which may be made in accordance with embodiments disclosed herein.
- FIG. 2 illustrates a cross section of a SiC thermal control plate which may be made in accordance with embodiments disclosed herein.
- FIG. 3 illustrates an exemplary embodiment of a Si containing gas distribution member which may be made in accordance with embodiments disclosed herein.
- Si containing means a material which includes Si.
- the material can be high purity Si, silicon carbide (SiC), or silicon oxide.
- Plasma processing chambers can include one or more gas distribution members such as a gas distribution plate, backing plate, or the like.
- One exemplary type of plasma processing apparatus is a capacitively coupled plasma processing chamber.
- a capacitively coupled plasma processing chamber comprises a vacuum chamber including a top electrode and a substrate support on which a substrate, such as a semiconductor wafer, is supported during plasma processing.
- the substrate support includes a bottom electrode and a clamping mechanism, e.g., a mechanical chuck or an electrostatic chuck (ESC), for clamping the substrate.
- the top electrode can be part of a showerhead electrode assembly for distributing process gas to the interior of the vacuum chamber.
- the showerhead electrode assembly can include one or more gas distribution members, such as the gas distribution plate, the backing member, the thermal control plate, and/or one or more vertically-spaced baffle rings below the backing member and above the showerhead electrode which control the supply of process gas to the vacuum chamber.
- the one or more gas distribution members are made of a material containing Si, are thermally conductive, electrically conductive, and corrosion and erosion resistant.
- thermally and electrically conductive gas distribution members such members are preferably made of silicon carbide (“SiC”), and more preferably the Si containing gas distribution members are made of CVD SiC.
- the thermally and electrically conductive Si containing gas distribution members may be made from plasma enhanced chemical vapor deposition (PECVD) or cold spraying.
- PECVD plasma enhanced chemical vapor deposition
- Advantages of the CVD SiC include high thermal conductivity (e.g., CVD SiC has about twice as much thermal conductivity as sintered SiC) and tailored electrical resistivity (e.g., resistivity of SiC can be varied from electrically conducting to semiconducting).
- CVD SiC for a gas distribution member
- the use of CVD SiC is advantageous from the standpoint of temperature control and minimizing particle generation.
- selecting SiC as the material of the gas distribution member allows the member to be highly resistant to chemical sputtering (sputtered SiC forming Si and C which may not affect device performance) and etching in environments that may contain oxygen, halogens, and/or hydro-fluorocarbon gas plasma in order to avoid corrosion and/or breakdown, and resultant particle generation associated therewith.
- the Si containing gas distribution member such as a SiC gas distribution member, may be exposed to corrosive halogen gases during processing wherein the corrosive halogen gases travel therethrough before being energized into plasma in the interior of the plasma processing chamber.
- one or more Si containing gas distribution members can be used to control the spatial distribution of process gas flow in the volume of the vacuum chamber above the plane of the substrate.
- the Si containing gas distribution member can be a SiC backing plate which contains an internal cavity structure, such as one or more gas plenums, and an array of gas inlet and outlet holes of specified diameters which extend axially between the internal cavity structure (i.e.
- the spatial distribution of aligned gas outlets in the SiC backing plate with the gas injection holes in the showerhead electrode may be varied to optimize etch uniformity of the layers to be etched, e.g., a photoresist layer, a silicon dioxide layer and an underlayer material on the wafer.
- FIG. 1 illustrates an embodiment of a showerhead electrode assembly comprising a Si containing gas distribution member and a showerhead electrode 200 , wherein the Si containing gas distribution member forms a SiC backing member 220 , including an internal cavity structure, located on the backside of the showerhead electrode 200 .
- the SiC backing member 220 is preferably part of a showerhead electrode assembly such as a cam-locked showerhead electrode assembly which is described in commonly-assigned U.S. Patent Application 2012/0175062, which is hereby incorporated by reference in its entirety.
- the SiC backing member 220 can be fastened with cam locks or contact bolts 225 to the showerhead electrode 200 or alternatively attached to a backside of the showerhead electrode 200 by elastomer bonding (for example, see commonly-assigned U.S. Pat. Nos. 6,194,322 B1 and 6,073,577, which are hereby incorporated by reference in their entirety).
- the SiC backing member 220 includes gas outlet holes 226 aligned with gas passages 206 in the showerhead electrode 200 to provide gas flow therethrough.
- the SiC backing member 220 includes one or more plenums to direct gas through the gas outlet holes 226 at the backside of the showerhead electrode 200 .
- a central plenum may be surrounded by an annular plenum within the backing member 220 such that the spatial distribution of process gas flow in the volume of the vacuum chamber above an underlying substrate may be controlled so a gas flow directed to a center region of the underlying substrate may be controlled independently from a gas flow directed towards an outer (edge) region of the underlying substrate.
- a central plenum 250 a is surrounded by two fluidly isolated annular plenums 250 b,c to form the internal cavity structure of the backing member 220 .
- the plenums are separated by integral walls 520 in the SiC backing member 220 , wherein the integral walls 520 may form concentric rings which define isolated gas zones in the internal cavity structure of the SiC backing member 220 .
- channels can be provided in the integral walls 520 such that the channels allow for gaseous communication between two or more plenums formed in the SiC backing member 220 .
- a Si containing gas distribution member is a thermal control plate installed in showerhead electrode assembly of a plasma processing chamber such as a capacitively coupled plasma chamber used for plasma etching semiconductor substrates.
- FIG. 2 is a cross-section of an upper electrode assembly 500 for a capacitively coupled plasma chamber including a Si containing gas distribution member wherein the Si containing gas distribution member forms a thermal control plate 510 including an internal cavity structure.
- the thermal control plate 510 is preferably made of SiC.
- the internal cavity structure of the SiC thermal control plate 510 forms plenums to direct process gas through gas outlet holes 526 in a lower surface of the SiC thermal control plate 510 through aligned gas passages 506 in the showerhead electrode leading into the plasma chamber.
- a central plenum 550 a which may be disk shaped, is surrounded by a first outer annular plenum 550 b and a second outer annular plenum 550 c.
- the central plenum 550 a and the first and second outer annular plenums 550 b,c are separated by integral walls 520 .
- the integral walls 520 separating plenums 550 a,b,c in the SiC thermal control plate 510 may form concentric rings which define isolated gas zones in the internal cavity structure of the SiC thermal control plate 510 .
- channels can be provided in the integral walls 520 such that the channels allow for gaseous communication between two or more plenums formed in the SiC thermal control plate 510 .
- FIG. 3 illustrates an alternate embodiment of a Si containing gas distribution member, wherein the Si containing gas distribution member forms a radially or laterally extending cylindrical SiC gas distribution plate 505 including an internal cavity structure formed by radially extending plenums.
- the internal cavity structure preferably forms multiple fluidly isolated radial gas plenums such as those formed by radial plenums 160 a,b .
- the SiC gas distribution plate 505 may further include an annular distribution conduit 151 extending into its upper surface and axially extending gas outlets 115 wherein the distribution conduit 151 and the axially extending gas outlets 115 are in fluid communication with the radial plenums 160 a.
- the SiC gas distribution plate 505 may also include a cylindrical blind bore 152 extending into its upper surface and axially extending gas outlets 122 , 125 wherein the cylindrical bore 152 and the axially extending gas outlets 122 , 125 are in fluid communication with radial plenums 160 b.
- the SiC gas distribution plate 505 may provide gas distribution to an optional backing member, or one or more plenums at the backside of a showerhead electrode (not shown).
- the annular plenums 160 a,b may be receive gas from radial gas passages (not shown) such that the SiC gas distribution plate 505 is edge fed with a process gas.
- a shaping step is performed to a carbon member, preferably graphite, which undergoes shaping such that a corresponding form of the internal cavity structure of the Si containing gas distribution member is formed from the carbon member.
- a Si containing gas distribution member which has more than one gas plenum will require an independent carbon member corresponding to the internal cavity structure of each plenum to be shaped.
- the carbon member(s) are shaped such that they correspond to the form of the gas plenum(s) comprised in the Si containing gas distribution member.
- Forms may include annular or radial shaped structures intended to form the annular or radial gas plenums in the internal cavity structure of the Si containing gas distribution member.
- fluidly isolated gas plenums are comprised in the Si containing gas distribution member.
- the carbon members are isolated from each other and are formed to correspond to fluidly isolated gas plenums in the Si containing gas distribution member.
- each isolated shaped carbon member is shaped such that it forms a respective independent gas plenum.
- Other embodiments of the Si containing gas distribution member may comprise independent gas plenums formed in alternate configurations, such as and not limited to radial gas plenums in communication with axially extending gas passages as illustrated in FIG. 3 .
- a Si containing material depositing step is performed.
- the Si containing material can preferably be deposited on the formed carbon member(s) by a CVD process, and grown to a predetermined thickness forming a Si containing shell around the formed carbon member(s).
- the Si containing material may be deposited by a PECVD process or a cold spray process.
- each formed carbon member is supported on a first side in a spatial configuration with respect to other formed carbon members. The spatial configuration is arranged to form the corresponding internal cavity structure of the gas distribution member. A second side of each formed carbon member is coated with Si containing material to form a CVD deposited Si containing shell.
- the formed carbon members including the portion of the CVD deposited Si containing shell may be turned and supported on a portion of the CVD deposited Si containing shell on the second side of each formed carbon member such that CVD Si containing material may be deposited on remaining exposed surfaces of each formed carbon member.
- the Si containing gas distribution member may be machined into the structure of the gas distribution member during a machining step.
- the machining step comprises both machining the Si containing shell into the corresponding external structure of the Si containing gas distribution member as well as fabricating gas inlet and outlet holes. Machining gas inlet and outlet holes will preferably expose a portion of the formed carbon member(s) in the interior region of the Si containing gas distribution member.
- the formed carbon member(s) may then be removed from the interior region of the Si containing gas distribution member in a removing step.
- the removing step comprises reacting the carbon member(s) with a gas such that the carbon atoms of the carbon member(s) oxidize and may thereby be removed from the interior region of the Si containing gas distribution member.
- the Si containing gas distribution member will remain, wherein the interior region of the Si containing gas distribution member comprises the corresponding internal cavity structure.
- the Si containing gas distribution member preferably comprises internal geometry such that an internal cavity structure is disposed in an interior region of the Si containing gas distribution member.
- the internal cavity structure is formed to comprise two isolated gas plenums inside of the Si containing gas distribution member such that each gas plenum may allow a differential radial distribution of process gases in the plasma chamber. It should be understood that in alternate preferred embodiments, a single gas plenum or three or more gas plenums may be formed. It is also preferable that each gas plenum be independent, i.e. fluidly isolated from other gas plenums in the Si containing gas distribution member.
- the machining can be performed by any suitable technique such as grinding, lapping, honing, ultrasonic machining, water jet or abrasive jet machining, laser machining, electrical discharge machining, ion-beam machining, electron-beam machining, chemical machining, electrochemical machining, or the like.
- a mechanical hole fabrication technique such as drilling, is used to form the gas inlet and outlet holes in the Si containing gas distribution member.
- the mechanical hole fabrication technique is used to form the major portion of the total gas inlet and outlet holes in the Si containing gas distribution member, then, a more precise technique, e.g., laser drilling, is used to adjust the permeability of the gas inlet and outlet holes in the Si containing gas distribution member.
- a more precise technique e.g., laser drilling
- the outer surface of the Si containing gas distribution member can be machined, such as by grinding and/or polishing, to achieve a desired surface finish prior to and/or after the removal of the carbon member.
- the formed carbon member or members, such as graphite member(s), in the interior region of the Si containing gas distribution member can be removed by heating the Si containing gas distribution member with exposed carbon surfaces in any suitable vessel, such as a high-temperature oven or furnace.
- the vessel preferably has an oxygen-containing atmosphere which can include, but is not limited to, O 2 , air, water vapor, or a mixture thereof.
- the vessel is sealed and the oxygen-containing atmosphere, such as air, is supplied into the vessel via a gas supply system.
- the Si containing gas distribution member may be maintained at atmospheric pressure within the vessel, or alternatively the pressure within the vessel may be lowered to sub-atmospheric pressures.
- the formed carbon member(s) may be chemically removed from the interior of the Si containing shell by converting the carbon to carbon dioxide (CO 2 ) gas and/or carbon monoxide (CO) gas. In essence, the oxygen reactions with the carbon in a combustion reaction that causes the carbon to burn.
- the SiC gas distribution member comprising the formed carbon member(s) may be heated in the presence of hydrogen, wherein the formed carbon member(s) may be converted to methane (CH 4 ) gas.
- CH 4 methane
- the formed carbon member(s) may be converted from solid to gas, and thereby be evacuated from the interior region of the Si containing gas distribution member.
- the formed carbon member(s) may be converted from solid to liquid, and thereby removed from the interior region of the Si containing gas distribution member.
- the oxygen-containing atmosphere is preferably maintained at a temperature that is effective to oxidize the carbon atoms of the carbon member(s) (i.e., convert the carbon member to CO, CO 2 or mixtures thereof), but is sufficiently low to substantially avoid oxidizing the Si containing material, such as SiC (i.e., adversely affecting mechanical and/or physical properties of the Si containing material.)
- the temperature of the oxygen-containing atmosphere in the treatment vessel is from about 600° C. to about 1200° C., and more preferably from about 800° C. to about 900° C.
- the Si containing gas distribution members are treated in the oxygen-containing atmosphere for an amount of time that is effective to remove all or at least substantially all of the carbon from the interior region of the Si containing gas distribution member, such as a SiC gas distribution member, preferably from about 2 hours to about 12 hours.
- Another preferred method of removing the formed carbon member(s), such as formed graphite member(s), from the interior region of the Si containing gas distribution member comprises treating the member with an oxygen plasma to remove all or substantially all of the carbon from the interior region.
- a SiC gas distribution member can be treated in an ashing chamber of a semiconductor substrate processing apparatus to remove the formed carbon member(s).
- the temperature of the SiC gas distribution member comprising the formed carbon member(s) in an interior region can range, for example, from about 200° C. to about 300° C. during the removal step.
- the plasma ashing process may be performed at sub-atmospheric pressures. In some embodiments, the pressure may be about 100 mbar or less.
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Abstract
A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member. The method includes removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member.
Description
- This application is a divisional of U.S. patent application Ser. No. 13/766,096, entitled METHOD OF MAKING A GAS DISTRIBUTION MEMBER FOR A PLASMA PROCESSING CHAMBER, filed on Feb. 13, 2013, the entire content of which is hereby incorporated by reference.
- The invention relates to plasma processing apparatuses and more specifically to a method of making a gas distribution member for a plasma processing chamber.
- Plasma processing apparatuses for processing semiconductor substrates, such as semiconductor wafers, can include one or more gas distribution members through which gas is flowed into a plasma processing chamber. For example, the gas distribution member can be a component of a showerhead electrode assembly positioned in the chamber to distribute process gas over a surface of a semiconductor substrate being processed in the chamber. Current gas distribution members are constructed from brazing two aluminum surfaces together and anodizing the aluminum surfaces, however, overflow of the brazing material is susceptible to corrosion when using halogen gases which may lead to contamination of semiconductor wafers during processing. Therefore a corrosion resistant gas distribution member is desired.
- Disclosed herein is a method of making a silicon (Si) containing gas distribution member which supplies process gas into a semiconductor plasma processing chamber. The method comprises forming a carbon member into a form corresponding to an internal cavity structure of the Si containing gas distribution member, and depositing Si containing material on the formed carbon member such that the Si containing material forms a shell of a predetermined thickness around the formed carbon member. Then, machining the Si containing shell into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member, and removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member.
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FIG. 1 illustrates a cross section of a SiC backing member which may be made in accordance with embodiments disclosed herein. -
FIG. 2 illustrates a cross section of a SiC thermal control plate which may be made in accordance with embodiments disclosed herein. -
FIG. 3 illustrates an exemplary embodiment of a Si containing gas distribution member which may be made in accordance with embodiments disclosed herein. - Disclosed herein is a method of making a Si containing gas distribution member, such as a SiC gas distribution member, with an internal cavity structure for supplying process gas to an interior of a plasma processing chamber. As used herein, Si containing means a material which includes Si. For example, the material can be high purity Si, silicon carbide (SiC), or silicon oxide. Plasma processing chambers can include one or more gas distribution members such as a gas distribution plate, backing plate, or the like. One exemplary type of plasma processing apparatus is a capacitively coupled plasma processing chamber. A capacitively coupled plasma processing chamber comprises a vacuum chamber including a top electrode and a substrate support on which a substrate, such as a semiconductor wafer, is supported during plasma processing. The substrate support includes a bottom electrode and a clamping mechanism, e.g., a mechanical chuck or an electrostatic chuck (ESC), for clamping the substrate. The top electrode (showerhead electrode) can be part of a showerhead electrode assembly for distributing process gas to the interior of the vacuum chamber. The showerhead electrode assembly can include one or more gas distribution members, such as the gas distribution plate, the backing member, the thermal control plate, and/or one or more vertically-spaced baffle rings below the backing member and above the showerhead electrode which control the supply of process gas to the vacuum chamber.
- Preferably, the one or more gas distribution members are made of a material containing Si, are thermally conductive, electrically conductive, and corrosion and erosion resistant. In order to provide thermally and electrically conductive gas distribution members, such members are preferably made of silicon carbide (“SiC”), and more preferably the Si containing gas distribution members are made of CVD SiC. Alternatively the thermally and electrically conductive Si containing gas distribution members may be made from plasma enhanced chemical vapor deposition (PECVD) or cold spraying. Advantages of the CVD SiC include high thermal conductivity (e.g., CVD SiC has about twice as much thermal conductivity as sintered SiC) and tailored electrical resistivity (e.g., resistivity of SiC can be varied from electrically conducting to semiconducting). Another advantage of using CVD SiC for a gas distribution member is that it is possible to obtain a highly uniform temperature distribution across the surface of the member inside the vacuum chamber. In the case of processing wherein the member is maintained at a high enough temperature to minimize polymer buildup on the exposed surfaces of the member, the use of CVD SiC is advantageous from the standpoint of temperature control and minimizing particle generation. Furthermore, selecting SiC as the material of the gas distribution member allows the member to be highly resistant to chemical sputtering (sputtered SiC forming Si and C which may not affect device performance) and etching in environments that may contain oxygen, halogens, and/or hydro-fluorocarbon gas plasma in order to avoid corrosion and/or breakdown, and resultant particle generation associated therewith.
- The Si containing gas distribution member, such as a SiC gas distribution member, may be exposed to corrosive halogen gases during processing wherein the corrosive halogen gases travel therethrough before being energized into plasma in the interior of the plasma processing chamber. Additionally, one or more Si containing gas distribution members can be used to control the spatial distribution of process gas flow in the volume of the vacuum chamber above the plane of the substrate. For example, the Si containing gas distribution member can be a SiC backing plate which contains an internal cavity structure, such as one or more gas plenums, and an array of gas inlet and outlet holes of specified diameters which extend axially between the internal cavity structure (i.e. gas plenums) and inlet or outlet surfaces of the SiC backing plate wherein the pattern of gas outlet holes in the SiC backing plate are aligned with the pattern of gas injection holes in an underlying showerhead electrode. The spatial distribution of aligned gas outlets in the SiC backing plate with the gas injection holes in the showerhead electrode may be varied to optimize etch uniformity of the layers to be etched, e.g., a photoresist layer, a silicon dioxide layer and an underlayer material on the wafer.
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FIG. 1 illustrates an embodiment of a showerhead electrode assembly comprising a Si containing gas distribution member and ashowerhead electrode 200, wherein the Si containing gas distribution member forms aSiC backing member 220, including an internal cavity structure, located on the backside of theshowerhead electrode 200. The SiCbacking member 220 is preferably part of a showerhead electrode assembly such as a cam-locked showerhead electrode assembly which is described in commonly-assigned U.S. Patent Application 2012/0175062, which is hereby incorporated by reference in its entirety. - The SiC
backing member 220 can be fastened with cam locks orcontact bolts 225 to theshowerhead electrode 200 or alternatively attached to a backside of theshowerhead electrode 200 by elastomer bonding (for example, see commonly-assigned U.S. Pat. Nos. 6,194,322 B1 and 6,073,577, which are hereby incorporated by reference in their entirety). The SiCbacking member 220 includesgas outlet holes 226 aligned withgas passages 206 in theshowerhead electrode 200 to provide gas flow therethrough. - Preferably, the SiC
backing member 220 includes one or more plenums to direct gas through thegas outlet holes 226 at the backside of theshowerhead electrode 200. For example, a central plenum may be surrounded by an annular plenum within thebacking member 220 such that the spatial distribution of process gas flow in the volume of the vacuum chamber above an underlying substrate may be controlled so a gas flow directed to a center region of the underlying substrate may be controlled independently from a gas flow directed towards an outer (edge) region of the underlying substrate. As illustrated inFIG. 1 , acentral plenum 250 a is surrounded by two fluidly isolatedannular plenums 250 b,c to form the internal cavity structure of thebacking member 220. The plenums are separated byintegral walls 520 in theSiC backing member 220, wherein theintegral walls 520 may form concentric rings which define isolated gas zones in the internal cavity structure of theSiC backing member 220. However, in alternate embodiments, channels can be provided in theintegral walls 520 such that the channels allow for gaseous communication between two or more plenums formed in theSiC backing member 220. - In an alternate embodiment disclosed herein, a Si containing gas distribution member is a thermal control plate installed in showerhead electrode assembly of a plasma processing chamber such as a capacitively coupled plasma chamber used for plasma etching semiconductor substrates.
FIG. 2 is a cross-section of anupper electrode assembly 500 for a capacitively coupled plasma chamber including a Si containing gas distribution member wherein the Si containing gas distribution member forms athermal control plate 510 including an internal cavity structure. Thethermal control plate 510 is preferably made of SiC. The internal cavity structure of the SiCthermal control plate 510 forms plenums to direct process gas throughgas outlet holes 526 in a lower surface of the SiCthermal control plate 510 through alignedgas passages 506 in the showerhead electrode leading into the plasma chamber. Acentral plenum 550 a, which may be disk shaped, is surrounded by a first outerannular plenum 550 b and a second outerannular plenum 550 c. Thecentral plenum 550 a and the first and second outerannular plenums 550 b,c are separated byintegral walls 520. Theintegral walls 520 separatingplenums 550 a,b,c in the SiCthermal control plate 510 may form concentric rings which define isolated gas zones in the internal cavity structure of the SiCthermal control plate 510. However, in alternate embodiments, channels can be provided in theintegral walls 520 such that the channels allow for gaseous communication between two or more plenums formed in the SiCthermal control plate 510. -
FIG. 3 illustrates an alternate embodiment of a Si containing gas distribution member, wherein the Si containing gas distribution member forms a radially or laterally extending cylindrical SiCgas distribution plate 505 including an internal cavity structure formed by radially extending plenums. The internal cavity structure preferably forms multiple fluidly isolated radial gas plenums such as those formed byradial plenums 160 a,b. The SiCgas distribution plate 505 may further include anannular distribution conduit 151 extending into its upper surface and axially extendinggas outlets 115 wherein thedistribution conduit 151 and the axially extendinggas outlets 115 are in fluid communication with theradial plenums 160 a. The SiCgas distribution plate 505 may also include a cylindricalblind bore 152 extending into its upper surface and axially extendinggas outlets cylindrical bore 152 and the axially extendinggas outlets radial plenums 160 b. Using gas feeds (not shown),conduit 151,cylindrical bore 152,radial plenums 160 a,b andgas outlets gas distribution plate 505 may provide gas distribution to an optional backing member, or one or more plenums at the backside of a showerhead electrode (not shown). Thus, different process gas chemistries and/or flow rates can be applied to one or more zones across the substrate being processed. In an alternate embodiment, theannular plenums 160 a,b may be receive gas from radial gas passages (not shown) such that the SiCgas distribution plate 505 is edge fed with a process gas. - Embodiments of methods of making the Si containing gas distribution member comprising an internal cavity structure are now discussed. First a shaping step is performed to a carbon member, preferably graphite, which undergoes shaping such that a corresponding form of the internal cavity structure of the Si containing gas distribution member is formed from the carbon member. Accordingly, a Si containing gas distribution member which has more than one gas plenum will require an independent carbon member corresponding to the internal cavity structure of each plenum to be shaped. In essence, the carbon member(s) are shaped such that they correspond to the form of the gas plenum(s) comprised in the Si containing gas distribution member. Forms may include annular or radial shaped structures intended to form the annular or radial gas plenums in the internal cavity structure of the Si containing gas distribution member. In preferred embodiments, fluidly isolated gas plenums are comprised in the Si containing gas distribution member. When more than one fluidly isolated gas plenum is desired, the carbon members are isolated from each other and are formed to correspond to fluidly isolated gas plenums in the Si containing gas distribution member. In a preferred embodiment, each isolated shaped carbon member is shaped such that it forms a respective independent gas plenum. Other embodiments of the Si containing gas distribution member may comprise independent gas plenums formed in alternate configurations, such as and not limited to radial gas plenums in communication with axially extending gas passages as illustrated in
FIG. 3 . - After the carbon member(s) have been formed into the corresponding internal cavity structure of the gas distribution member, a Si containing material depositing step is performed. The Si containing material can preferably be deposited on the formed carbon member(s) by a CVD process, and grown to a predetermined thickness forming a Si containing shell around the formed carbon member(s). Alternatively, the Si containing material may be deposited by a PECVD process or a cold spray process. Preferably, each formed carbon member is supported on a first side in a spatial configuration with respect to other formed carbon members. The spatial configuration is arranged to form the corresponding internal cavity structure of the gas distribution member. A second side of each formed carbon member is coated with Si containing material to form a CVD deposited Si containing shell. Then, the formed carbon members including the portion of the CVD deposited Si containing shell may be turned and supported on a portion of the CVD deposited Si containing shell on the second side of each formed carbon member such that CVD Si containing material may be deposited on remaining exposed surfaces of each formed carbon member. After the Si containing shell is formed, the Si containing gas distribution member may be machined into the structure of the gas distribution member during a machining step. The machining step comprises both machining the Si containing shell into the corresponding external structure of the Si containing gas distribution member as well as fabricating gas inlet and outlet holes. Machining gas inlet and outlet holes will preferably expose a portion of the formed carbon member(s) in the interior region of the Si containing gas distribution member. The formed carbon member(s) may then be removed from the interior region of the Si containing gas distribution member in a removing step. The removing step comprises reacting the carbon member(s) with a gas such that the carbon atoms of the carbon member(s) oxidize and may thereby be removed from the interior region of the Si containing gas distribution member. After the carbon member(s) have been removed, the Si containing gas distribution member will remain, wherein the interior region of the Si containing gas distribution member comprises the corresponding internal cavity structure.
- The Si containing gas distribution member preferably comprises internal geometry such that an internal cavity structure is disposed in an interior region of the Si containing gas distribution member. In a preferred embodiment, the internal cavity structure is formed to comprise two isolated gas plenums inside of the Si containing gas distribution member such that each gas plenum may allow a differential radial distribution of process gases in the plasma chamber. It should be understood that in alternate preferred embodiments, a single gas plenum or three or more gas plenums may be formed. It is also preferable that each gas plenum be independent, i.e. fluidly isolated from other gas plenums in the Si containing gas distribution member.
- The machining can be performed by any suitable technique such as grinding, lapping, honing, ultrasonic machining, water jet or abrasive jet machining, laser machining, electrical discharge machining, ion-beam machining, electron-beam machining, chemical machining, electrochemical machining, or the like. In a preferred embodiment, a mechanical hole fabrication technique, such as drilling, is used to form the gas inlet and outlet holes in the Si containing gas distribution member. In a more preferable embodiment, the mechanical hole fabrication technique is used to form the major portion of the total gas inlet and outlet holes in the Si containing gas distribution member, then, a more precise technique, e.g., laser drilling, is used to adjust the permeability of the gas inlet and outlet holes in the Si containing gas distribution member. In a preferred embodiment of the method, the outer surface of the Si containing gas distribution member can be machined, such as by grinding and/or polishing, to achieve a desired surface finish prior to and/or after the removal of the carbon member.
- Other exemplary Si containing gas distribution member machining techniques which can be used are described in commonly-assigned U.S. Pat. No. 7,480,974, which is incorporated herein by reference in its entirety.
- The formed carbon member or members, such as graphite member(s), in the interior region of the Si containing gas distribution member can be removed by heating the Si containing gas distribution member with exposed carbon surfaces in any suitable vessel, such as a high-temperature oven or furnace. The vessel preferably has an oxygen-containing atmosphere which can include, but is not limited to, O2, air, water vapor, or a mixture thereof. In a preferred embodiment, the vessel is sealed and the oxygen-containing atmosphere, such as air, is supplied into the vessel via a gas supply system. The Si containing gas distribution member may be maintained at atmospheric pressure within the vessel, or alternatively the pressure within the vessel may be lowered to sub-atmospheric pressures.
- As a result of heating the Si containing gas distribution member with the atmosphere exposed carbon member(s) in the presence of oxygen, the formed carbon member(s) may be chemically removed from the interior of the Si containing shell by converting the carbon to carbon dioxide (CO2) gas and/or carbon monoxide (CO) gas. In essence, the oxygen reactions with the carbon in a combustion reaction that causes the carbon to burn. In an alternate embodiment, the SiC gas distribution member comprising the formed carbon member(s) may be heated in the presence of hydrogen, wherein the formed carbon member(s) may be converted to methane (CH4) gas. Hence the formed carbon member(s) may be converted from solid to gas, and thereby be evacuated from the interior region of the Si containing gas distribution member. In an alternate embodiment, the formed carbon member(s) may be converted from solid to liquid, and thereby removed from the interior region of the Si containing gas distribution member.
- The oxygen-containing atmosphere is preferably maintained at a temperature that is effective to oxidize the carbon atoms of the carbon member(s) (i.e., convert the carbon member to CO, CO2 or mixtures thereof), but is sufficiently low to substantially avoid oxidizing the Si containing material, such as SiC (i.e., adversely affecting mechanical and/or physical properties of the Si containing material.) Preferably, the temperature of the oxygen-containing atmosphere in the treatment vessel is from about 600° C. to about 1200° C., and more preferably from about 800° C. to about 900° C. The Si containing gas distribution members are treated in the oxygen-containing atmosphere for an amount of time that is effective to remove all or at least substantially all of the carbon from the interior region of the Si containing gas distribution member, such as a SiC gas distribution member, preferably from about 2 hours to about 12 hours.
- Another preferred method of removing the formed carbon member(s), such as formed graphite member(s), from the interior region of the Si containing gas distribution member comprises treating the member with an oxygen plasma to remove all or substantially all of the carbon from the interior region. For example, a SiC gas distribution member can be treated in an ashing chamber of a semiconductor substrate processing apparatus to remove the formed carbon member(s). The temperature of the SiC gas distribution member comprising the formed carbon member(s) in an interior region can range, for example, from about 200° C. to about 300° C. during the removal step. In some embodiments, the plasma ashing process may be performed at sub-atmospheric pressures. In some embodiments, the pressure may be about 100 mbar or less.
- While embodiments disclosed herein have been described in detail with reference to specific embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made, and equivalents employed, without departing from the scope of the appended claims.
Claims (20)
1. A showerhead electrode assembly for a semiconductor plasma processing chamber comprising a Si containing gas distribution member made by forming a carbon member into a form corresponding to an internal cavity structure of the Si containing gas distribution member; depositing a Si containing material on the formed carbon member such that the Si containing material forms a shell of a predetermined thickness around the formed carbon member; machining the Si containing shell into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member; and removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member; and a silicon showerhead electrode wherein the Si containing gas distribution member has a pattern of gas holes matching a pattern of gas holes of the silicon showerhead electrode.
2. The showerhead electrode assembly of claim 1 , wherein the Si containing gas distribution member is a gas distribution plate, thermal control plate, or a backing plate.
3. A method of processing a semiconductor substrate in a plasma processing chamber including the showerhead electrode assembly of claim 1 , the method comprising:
transporting a semiconductor substrate into the plasma processing apparatus and supporting the substrate on a substrate support;
introducing a process gas into the plasma processing chamber through the Si containing gas distribution member;
energizing the process gas into a plasma state; and
processing the semiconductor substrate with the plasma.
4. The method of claim 3 , wherein the processing includes deposition of conductive or dielectric material on the substrate.
5. The method of claim 3 , wherein the processing includes plasma etching a layer on the substrate wherein the layer is metal, dielectric, or photoresist.
6. The method of claim 5 , wherein the plasma etching comprises etching openings in a dielectric material using fluorocarbon and/or hydrofluorocarbon etching gas.
7. The showerhead electrode assembly of claim 1 , wherein the method includes depositing Si containing material on the formed carbon member includes supporting the formed carbon member on a first side of the formed carbon member and depositing Si containing material on a second side of the formed carbon member, turning the formed carbon member, and then supporting the deposited Si containing material on the second side of the formed carbon member and depositing Si containing material on the first side of the formed carbon member.
8. The showerhead electrode assembly of claim 1 , wherein the formed carbon member comprises multiple disconnected carbon elements which are formed and arranged in a spatial relationship corresponding to the internal cavity structure of the Si containing gas distribution member, the multiple disconnected carbon elements being arranged such that they may form more than one fluidly isolated gas zones in the Si containing gas distribution member wherein depositing Si containing material on the formed and arranged carbon elements comprises supporting each carbon element on a first side and depositing Si containing material on each second side of the formed and arranged carbon elements forming a portion of the Si containing shell on the second sides of the formed and arranged carbon elements, turning the formed and arranged carbon elements, and then supporting the portion of the Si containing shell on the second sides of the formed and arranged carbon elements and depositing Si containing material on each first side of the formed and arranged carbon elements forming the Si containing shell on the formed and arranged carbon elements.
9. The showerhead electrode assembly of claim 8 , wherein the fluidly isolated gas zones inside of the Si containing gas distribution member are arranged such that each fluidly isolated gas zone may allow a different radial or annular distribution of process gases.
10. The showerhead electrode assembly of claim 8 , wherein two disconnected carbon elements are formed into the corresponding form of an internal cavity having two fluidly isolated gas plenums inside of the Si containing gas distribution member.
11. The showerhead electrode assembly of claim 1 , wherein the Si containing material depositing step is performed by a CVD process, a PECVD process, or a cold spray process.
12. The showerhead electrode assembly of claim 1 , wherein the removal of the formed carbon member comprises an aching process.
13. The showerhead electrode assembly of claim 1 , wherein the removal of the formed carbon member comprises heating the Si containing coated carbon member in an oxygen-containing atmosphere to remove the carbon from the interior region of the Si containing gas distribution member.
14. The showerhead electrode assembly of claim 1 , wherein the removal of the carbon member comprises heating the Si containing coated carbon member in a hydrogen-containing atmosphere to remove the carbon from the interior region of the Si containing gas distribution member.
15. The showerhead electrode assembly of claim 1 , wherein each gas inlet and outlet hole is fabricated by a mechanical fabrication technique such as drilling.
16. The showerhead electrode assembly of claim 15 , wherein each gas inlet and outlet hole is further laser drilled to adjust the permeability of each gas inlet and outlet hole to a predetermined permeability.
17. The showerhead electrode assembly of claim 1 , wherein the semiconductor plasma processing chamber is a plasma etch chamber.
18. The showerhead electrode assembly of claim 1 , wherein the Si containing gas distribution member is a gas distribution plate.
19. The showerhead electrode assembly of claim 1 , wherein the formed carbon member is formed from graphite.
20. The showerhead electrode assembly of claim 1 , wherein the Si containing material is SiC.
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Cited By (3)
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WO2021061487A1 (en) * | 2019-09-27 | 2021-04-01 | Applied Materials, Inc. | Monolithic modular microwave source with integrated process gas distribution |
WO2022086869A1 (en) * | 2020-10-22 | 2022-04-28 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
WO2022103672A1 (en) * | 2020-11-13 | 2022-05-19 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
Families Citing this family (14)
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US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
US20140315392A1 (en) * | 2013-04-22 | 2014-10-23 | Lam Research Corporation | Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof |
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US9958782B2 (en) * | 2016-06-29 | 2018-05-01 | Applied Materials, Inc. | Apparatus for post exposure bake |
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Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US20030004197A1 (en) * | 1999-03-19 | 2003-01-02 | L'oreal | Composition with a continuous aqueous phase containing L-2-oxothiazoldine-4-carboxylic acid |
US20030011196A1 (en) * | 2001-07-12 | 2003-01-16 | Kern Robert D. | Air flow arrangement for generator enclosure |
US20040074609A1 (en) * | 2002-05-23 | 2004-04-22 | Andreas Fischer | Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode |
US20050106884A1 (en) * | 2003-11-14 | 2005-05-19 | Daxing Ren | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon |
US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US20070068629A1 (en) * | 2005-09-23 | 2007-03-29 | Hong Shih | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
US20080087641A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Components for a plasma processing apparatus |
US20080090417A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
US20080141941A1 (en) * | 2006-12-18 | 2008-06-19 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
US7480974B2 (en) * | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
US20090163034A1 (en) * | 2007-12-19 | 2009-06-25 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US20100003829A1 (en) * | 2008-07-07 | 2010-01-07 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US20100003824A1 (en) * | 2008-07-07 | 2010-01-07 | Lam Research Corporation | Clamped showerhead electrode assembly |
US20100040768A1 (en) * | 2008-08-15 | 2010-02-18 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US20100184298A1 (en) * | 2008-08-15 | 2010-07-22 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US20100261354A1 (en) * | 2009-04-10 | 2010-10-14 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US20110002103A1 (en) * | 2009-07-01 | 2011-01-06 | Wen-Yi Lee | Interlocking Structure For Memory Heat Sink |
US20110021031A1 (en) * | 2007-10-31 | 2011-01-27 | Taylor Travis R | High lifetime consumable silicon nitride-silicon dioxide plasma processing components |
US20110070740A1 (en) * | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US20110083809A1 (en) * | 2009-10-13 | 2011-04-14 | Lam Research Corporation | Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly |
US20120045902A1 (en) * | 2007-03-30 | 2012-02-23 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
US20120175062A1 (en) * | 2011-01-06 | 2012-07-12 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
US20130228550A1 (en) * | 2012-03-01 | 2013-09-05 | Hitachi High-Technologies Corporation | Dry etching apparatus and method |
US20130299605A1 (en) * | 2012-05-09 | 2013-11-14 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
US20140103806A1 (en) * | 2012-10-17 | 2014-04-17 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
US20140227866A1 (en) * | 2013-02-13 | 2014-08-14 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
US9580360B2 (en) * | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03162593A (en) * | 1989-11-21 | 1991-07-12 | Hitachi Chem Co Ltd | Electrode plate for plasma etching and production thereof |
JP3897393B2 (en) * | 1997-04-14 | 2007-03-22 | 東芝セラミックス株式会社 | Method for producing high-purity silicon carbide semiconductor processing member |
JP3478703B2 (en) * | 1997-05-15 | 2003-12-15 | 信越化学工業株式会社 | Method for producing silicon carbide electrode plate |
JPH11104950A (en) * | 1997-10-03 | 1999-04-20 | Shin Etsu Chem Co Ltd | Electrode plate and manufacture thereof |
JP2003533010A (en) * | 1999-09-30 | 2003-11-05 | ラム リサーチ コーポレーション | Pre-treated gas rectifier plate |
US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
JP2003059903A (en) * | 2001-08-10 | 2003-02-28 | Ibiden Co Ltd | Gas blow-off plate of plasma etching apparatus, and method of manufacturing the same |
JP2005285846A (en) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | Gas-jetting board of plasma etching apparatus |
JP2005285845A (en) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | Gas-jetting board for plasma etching apparatus |
US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
-
2013
- 2013-02-13 US US13/766,096 patent/US8883029B2/en not_active Expired - Fee Related
-
2014
- 2014-02-13 TW TW103104796A patent/TWI662148B/en active
- 2014-02-13 KR KR1020140016848A patent/KR20140102154A/en not_active Application Discontinuation
- 2014-02-13 JP JP2014025393A patent/JP6335538B2/en active Active
- 2014-10-09 US US14/510,681 patent/US20150024582A1/en not_active Abandoned
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194322B1 (en) * | 1998-06-30 | 2001-02-27 | Lam Research Corporation | Electrode for plasma processes and method for a manufacture and use thereof |
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US20030004197A1 (en) * | 1999-03-19 | 2003-01-02 | L'oreal | Composition with a continuous aqueous phase containing L-2-oxothiazoldine-4-carboxylic acid |
US20030011196A1 (en) * | 2001-07-12 | 2003-01-16 | Kern Robert D. | Air flow arrangement for generator enclosure |
US20040074609A1 (en) * | 2002-05-23 | 2004-04-22 | Andreas Fischer | Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode |
US7267741B2 (en) * | 2003-11-14 | 2007-09-11 | Lam Research Corporation | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon |
US20050106884A1 (en) * | 2003-11-14 | 2005-05-19 | Daxing Ren | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon |
US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US7480974B2 (en) * | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
US20070068629A1 (en) * | 2005-09-23 | 2007-03-29 | Hong Shih | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
US20080087641A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Components for a plasma processing apparatus |
US20080090417A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
US20080141941A1 (en) * | 2006-12-18 | 2008-06-19 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
US20120045902A1 (en) * | 2007-03-30 | 2012-02-23 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
US20110021031A1 (en) * | 2007-10-31 | 2011-01-27 | Taylor Travis R | High lifetime consumable silicon nitride-silicon dioxide plasma processing components |
US20090163034A1 (en) * | 2007-12-19 | 2009-06-25 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US20100003829A1 (en) * | 2008-07-07 | 2010-01-07 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US20100003824A1 (en) * | 2008-07-07 | 2010-01-07 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US20100040768A1 (en) * | 2008-08-15 | 2010-02-18 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US20100184298A1 (en) * | 2008-08-15 | 2010-07-22 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US20100261354A1 (en) * | 2009-04-10 | 2010-10-14 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US20110002103A1 (en) * | 2009-07-01 | 2011-01-06 | Wen-Yi Lee | Interlocking Structure For Memory Heat Sink |
US20110070740A1 (en) * | 2009-09-18 | 2011-03-24 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US20110083809A1 (en) * | 2009-10-13 | 2011-04-14 | Lam Research Corporation | Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly |
US20120175062A1 (en) * | 2011-01-06 | 2012-07-12 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
US20130228550A1 (en) * | 2012-03-01 | 2013-09-05 | Hitachi High-Technologies Corporation | Dry etching apparatus and method |
US20130299605A1 (en) * | 2012-05-09 | 2013-11-14 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
US20140103806A1 (en) * | 2012-10-17 | 2014-04-17 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
US20140227866A1 (en) * | 2013-02-13 | 2014-08-14 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
US9580360B2 (en) * | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
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US11881384B2 (en) | 2019-09-27 | 2024-01-23 | Applied Materials, Inc. | Monolithic modular microwave source with integrated process gas distribution |
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WO2022103672A1 (en) * | 2020-11-13 | 2022-05-19 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
Also Published As
Publication number | Publication date |
---|---|
US8883029B2 (en) | 2014-11-11 |
TWI662148B (en) | 2019-06-11 |
JP6335538B2 (en) | 2018-05-30 |
US20140227866A1 (en) | 2014-08-14 |
KR20140102154A (en) | 2014-08-21 |
TW201443273A (en) | 2014-11-16 |
JP2014160819A (en) | 2014-09-04 |
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