JP2016063221A5 - - Google Patents

Download PDF

Info

Publication number
JP2016063221A5
JP2016063221A5 JP2015173478A JP2015173478A JP2016063221A5 JP 2016063221 A5 JP2016063221 A5 JP 2016063221A5 JP 2015173478 A JP2015173478 A JP 2015173478A JP 2015173478 A JP2015173478 A JP 2015173478A JP 2016063221 A5 JP2016063221 A5 JP 2016063221A5
Authority
JP
Japan
Prior art keywords
processing system
collar
substrate processing
stem portion
showerhead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015173478A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016063221A (ja
JP6580426B2 (ja
Filing date
Publication date
Priority claimed from US14/668,174 external-priority patent/US9793096B2/en
Application filed filed Critical
Publication of JP2016063221A publication Critical patent/JP2016063221A/ja
Publication of JP2016063221A5 publication Critical patent/JP2016063221A5/ja
Application granted granted Critical
Publication of JP6580426B2 publication Critical patent/JP6580426B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015173478A 2014-09-12 2015-09-03 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム Active JP6580426B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462049767P 2014-09-12 2014-09-12
US62/049,767 2014-09-12
US14/668,174 US9793096B2 (en) 2014-09-12 2015-03-25 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US14/668,174 2015-03-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019155241A Division JP6878527B2 (ja) 2014-09-12 2019-08-28 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム

Publications (3)

Publication Number Publication Date
JP2016063221A JP2016063221A (ja) 2016-04-25
JP2016063221A5 true JP2016063221A5 (enExample) 2018-11-01
JP6580426B2 JP6580426B2 (ja) 2019-09-25

Family

ID=55455414

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2015173478A Active JP6580426B2 (ja) 2014-09-12 2015-09-03 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム
JP2019155241A Active JP6878527B2 (ja) 2014-09-12 2019-08-28 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム
JP2021075846A Active JP7232864B2 (ja) 2014-09-12 2021-04-28 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2019155241A Active JP6878527B2 (ja) 2014-09-12 2019-08-28 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム
JP2021075846A Active JP7232864B2 (ja) 2014-09-12 2021-04-28 寄生プラズマを抑制してウエハ内での不均一性を低減するための基板処理システム

Country Status (6)

Country Link
US (3) US9793096B2 (enExample)
JP (3) JP6580426B2 (enExample)
KR (2) KR102333806B1 (enExample)
CN (1) CN105428194B (enExample)
SG (1) SG10201507194VA (enExample)
TW (1) TWI671842B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
JP6794184B2 (ja) * 2016-08-31 2020-12-02 株式会社日本製鋼所 プラズマ原子層成長装置
US10622243B2 (en) 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
KR102762543B1 (ko) * 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR101850895B1 (ko) 2017-01-03 2018-04-20 한국표준과학연구원 플라즈마 발생 장치
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
US12057300B2 (en) 2019-03-11 2024-08-06 Lam Research Corporation Apparatus for cleaning plasma chambers
CN118866642A (zh) * 2019-05-29 2024-10-29 朗姆研究公司 用于均匀度调整的喷头插件
WO2021011950A1 (en) * 2019-07-17 2021-01-21 Lam Research Corporation Modulation of oxidation profile for substrate processing
CN114258436A (zh) 2019-08-16 2022-03-29 朗姆研究公司 空间可调沉积以在晶片差异弯曲中进行补偿
WO2021042116A1 (en) 2019-08-23 2021-03-04 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
CN115298350A (zh) * 2020-03-19 2022-11-04 朗姆研究公司 喷头清扫环
CN115362538A (zh) * 2020-04-06 2022-11-18 朗姆研究公司 气体注射器的陶瓷增材制造技术
KR20230104976A (ko) * 2020-11-18 2023-07-11 램 리써치 코포레이션 시일을 포함하는 페데스탈
KR102500678B1 (ko) * 2021-08-25 2023-02-16 주식회사 아이에스티이 기생 플라즈마 방지를 위한 샤워헤드 가스 공급장치
KR102816283B1 (ko) 2022-12-29 2025-06-04 (주)씨엔원 기생 플라즈마 방지를 위해 종방향으로 배치된 다공관 구조체가 구비된 샤워헤드 장치
FI131467B1 (en) * 2023-04-11 2025-05-07 Beneq Oy An atomic layer deposition apparatus and a method for coating a substrate
CN121241165A (zh) * 2023-05-22 2025-12-30 朗姆研究公司 在半导体制造设备中降低喷头阻抗的喷头优化

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE628052A (enExample) * 1962-03-15
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
JP3295336B2 (ja) * 1996-03-01 2002-06-24 キヤノン株式会社 マイクロ波プラズマ処理装置およびプラズマ処理方法
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US7004107B1 (en) 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
ATE244780T1 (de) * 1999-12-22 2003-07-15 Aixtron Ag Cvd reaktor und prozesskammer dafür
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US20070187363A1 (en) * 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR101020160B1 (ko) 2006-03-03 2011-03-09 엘아이지에이디피 주식회사 플라즈마 처리장치
JP2008078515A (ja) * 2006-09-25 2008-04-03 Tokyo Electron Ltd プラズマ処理方法
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
KR101204614B1 (ko) * 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
CN101999158A (zh) 2008-04-12 2011-03-30 应用材料股份有限公司 等离子体处理设备与方法
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US9441296B2 (en) * 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
US20130071581A1 (en) * 2011-09-20 2013-03-21 Jonghoon Baek Plasma monitoring and minimizing stray capacitance
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI654333B (zh) * 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9617638B2 (en) * 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10407771B2 (en) * 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
CN104409309B (zh) * 2014-12-01 2016-09-21 逢甲大学 大面积等离子体处理装置与均匀等离子体生成方法
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
US9758868B1 (en) * 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
TWI838240B (zh) * 2019-05-28 2024-04-01 美商應用材料股份有限公司 具有背側泵送的熱處理腔室蓋

Similar Documents

Publication Publication Date Title
JP2016063221A5 (enExample)
US11127567B2 (en) Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10626500B2 (en) Showerhead design
US9951421B2 (en) Inlet for effective mixing and purging
US10840061B2 (en) Substrate processing chamber including conical surface for reducing recirculation
US9353439B2 (en) Cascade design showerhead for transient uniformity
KR102697639B1 (ko) 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
US10745806B2 (en) Showerhead with air-gapped plenums and overhead isolation gas distributor
US7361228B2 (en) Showerheads for providing a gas to a substrate and apparatus
JP2020014004A (ja) ウェハ処理機器の化学制御機構
US20160002778A1 (en) Substrate support with more uniform edge purge
CN110060941A (zh) 减少在晶片边缘的背面沉积
TWI671816B (zh) 負載鎖定整合斜面蝕刻器系統
JP2014515561A5 (enExample)
US10157755B2 (en) Purge and pumping structures arranged beneath substrate plane to reduce defects
JP4677413B2 (ja) 好ましくないガス混合無しで、高温用加工体を通る二種のガス送出用のシステム、方法及び装置