SG10201507194VA - Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity - Google Patents

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Info

Publication number
SG10201507194VA
SG10201507194VA SG10201507194VA SG10201507194VA SG10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA
Authority
SG
Singapore
Prior art keywords
uniformity
systems
reducing
methods
wafer non
Prior art date
Application number
SG10201507194VA
Inventor
Kang Hu
Lavoie Adrien
Swaminathan Shankar
Qian Jun
Baldasseroni Chloe
Pasquale Frank
Duvall Andrew
Minshall Ted
Petraglia Jennifer
Leeser Karl
Smith David
Varadarajan Sesha
Augustyniak Edward
Keil Douglas
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201507194VA publication Critical patent/SG10201507194VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • C23C16/345Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/405Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG10201507194VA 2014-09-12 2015-09-08 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity SG10201507194VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462049767P 2014-09-12 2014-09-12
US14/668,174 US9793096B2 (en) 2014-09-12 2015-03-25 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Publications (1)

Publication Number Publication Date
SG10201507194VA true SG10201507194VA (en) 2016-04-28

Family

ID=55455414

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201507194VA SG10201507194VA (en) 2014-09-12 2015-09-08 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Country Status (6)

Country Link
US (3) US9793096B2 (en)
JP (3) JP6580426B2 (en)
KR (2) KR102333806B1 (en)
CN (1) CN105428194B (en)
SG (1) SG10201507194VA (en)
TW (1) TWI671842B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
KR101937115B1 (en) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 Hybrid ceramic showerhead
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
JP6794184B2 (en) * 2016-08-31 2020-12-02 株式会社日本製鋼所 Plasma atomic layer deposition equipment
US10622243B2 (en) * 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
KR20180068582A (en) * 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR101850895B1 (en) * 2017-01-03 2018-04-20 한국표준과학연구원 Plasma Generation Apparatus
TWI649446B (en) * 2017-03-15 2019-02-01 漢民科技股份有限公司 Detachable gas injectorused for semiconductor equipment
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN113597479A (en) * 2019-03-11 2021-11-02 朗姆研究公司 Apparatus for cleaning a plasma chamber
CN113924635B (en) * 2019-05-29 2024-07-05 朗姆研究公司 Spray head insert for uniformity adjustment
US12087573B2 (en) 2019-07-17 2024-09-10 Lam Research Corporation Modulation of oxidation profile for substrate processing
US20230134061A1 (en) * 2020-03-19 2023-05-04 Lam Research Corporation Showerhead purge collar
KR102500678B1 (en) * 2021-08-25 2023-02-16 주식회사 아이에스티이 Gas supplier of shower head for protection of parasitic plasma
KR20240105806A (en) 2022-12-29 2024-07-08 (주)씨엔원 Showerhead Device equipped with a longitudinal porous tube structure to prevent parasitic plasma

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE628052A (en) * 1962-03-15
JPS63227011A (en) * 1987-03-17 1988-09-21 Fujitsu Ltd Chemical vapor deposition system
JP2725081B2 (en) * 1990-07-05 1998-03-09 富士通株式会社 Heat treatment equipment for semiconductor device manufacturing
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
JP3295336B2 (en) * 1996-03-01 2002-06-24 キヤノン株式会社 Microwave plasma processing apparatus and plasma processing method
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US7004107B1 (en) 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
ATE244780T1 (en) * 1999-12-22 2003-07-15 Aixtron Ag CVD REACTOR AND PROCESS CHAMBER THEREOF
DE10007059A1 (en) * 2000-02-16 2001-08-23 Aixtron Ag Method and device for producing coated substrates by means of condensation coating
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
JP4338355B2 (en) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 Plasma processing equipment
US20070187363A1 (en) * 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR101020160B1 (en) 2006-03-03 2011-03-09 엘아이지에이디피 주식회사 Apparatus for processing substrate with plasma
JP2008078515A (en) * 2006-09-25 2008-04-03 Tokyo Electron Ltd Plasma treatment method
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
CN101772833B (en) * 2008-02-20 2012-04-18 东京毅力科创株式会社 Gas supply device
JP5659146B2 (en) 2008-04-12 2015-01-28 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Plasma processing apparatus and method
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
KR101937115B1 (en) * 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 Hybrid ceramic showerhead
US20130071581A1 (en) * 2011-09-20 2013-03-21 Jonghoon Baek Plasma monitoring and minimizing stray capacitance
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI654333B (en) * 2013-12-18 2019-03-21 美商蘭姆研究公司 Semiconductor substrate processing apparatus including uniformity baffles
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9617638B2 (en) * 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10407771B2 (en) * 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
CN104409309B (en) * 2014-12-01 2016-09-21 逢甲大学 Large area plasma processing means generates method with homogeneous plasma
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
US9758868B1 (en) * 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
WO2020243288A1 (en) * 2019-05-28 2020-12-03 Applied Materials, Inc. Thermal process chamber lid with backside pumping

Also Published As

Publication number Publication date
CN105428194B (en) 2018-06-01
US10665429B2 (en) 2020-05-26
TWI671842B (en) 2019-09-11
JP2020025100A (en) 2020-02-13
KR102333806B1 (en) 2021-12-01
TW201626483A (en) 2016-07-16
JP7232864B2 (en) 2023-03-03
JP6878527B2 (en) 2021-05-26
US20180068833A1 (en) 2018-03-08
JP2021119626A (en) 2021-08-12
KR20160031420A (en) 2016-03-22
JP6580426B2 (en) 2019-09-25
KR20210150330A (en) 2021-12-10
US9793096B2 (en) 2017-10-17
US11127567B2 (en) 2021-09-21
US20160079036A1 (en) 2016-03-17
KR102525777B1 (en) 2023-04-25
CN105428194A (en) 2016-03-23
JP2016063221A (en) 2016-04-25
US20200335304A1 (en) 2020-10-22

Similar Documents

Publication Publication Date Title
SG10201507194VA (en) Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
ZA201608349B (en) Systems and methods for communication
EP3178265A4 (en) Systems and methods for dual-connectivity operation
EP3141051A4 (en) Systems and methods for dual-connectivity operation
EP3237017A4 (en) Systems and methods for genome modification and regulation
EP3100557A4 (en) Systems and methods for dual-connectivity operation
EP3100578A4 (en) Systems and methods for dual-connectivity operation
SG11201704316YA (en) Methods and apparatuses for haptic systems
EP3177183A4 (en) Therapeutic cushion systems and methods
EP3102289A4 (en) Systems and methods for phototherapy
EP3110820A4 (en) Tyk2 inhibitors and uses thereof
EP3186137A4 (en) Systems and methods for supporting telescoping elements
GB201818790D0 (en) Systems and methods for reducing stress
EP3135046A4 (en) Systems and methods for generating location based entitlements
EP3191751A4 (en) Systems and methods for coolant drawback
EP3166523A4 (en) Cryoablation method and system
EP3120278A4 (en) Methods and systems for genome comparison
GB2542067B (en) Method and system for controlling well operations
EP3216044A4 (en) Systems and methods for suppressing unwanted ions
EP3332215A4 (en) Systems and methods for northfinding
SG11201604447QA (en) Systems and methods for reducing scouring
GB201517288D0 (en) Methods and systems for controlling user devices
EP3140723A4 (en) Systems and methods for scaling an object
EP3154889A4 (en) Method for using an elevator system and elevator system
EP3300302A4 (en) Method for implementing application and service controller