JP2009529579A5 - - Google Patents

Download PDF

Info

Publication number
JP2009529579A5
JP2009529579A5 JP2009500578A JP2009500578A JP2009529579A5 JP 2009529579 A5 JP2009529579 A5 JP 2009529579A5 JP 2009500578 A JP2009500578 A JP 2009500578A JP 2009500578 A JP2009500578 A JP 2009500578A JP 2009529579 A5 JP2009529579 A5 JP 2009529579A5
Authority
JP
Japan
Prior art keywords
strontium
precursor
bis
alkyl
precursor composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009500578A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009529579A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2007/063825 external-priority patent/WO2007106788A2/en
Publication of JP2009529579A publication Critical patent/JP2009529579A/ja
Publication of JP2009529579A5 publication Critical patent/JP2009529579A5/ja
Pending legal-status Critical Current

Links

JP2009500578A 2006-03-10 2007-03-12 チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物 Pending JP2009529579A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US78129106P 2006-03-10 2006-03-10
US79129906P 2006-04-12 2006-04-12
US84486706P 2006-09-15 2006-09-15
US88472807P 2007-01-12 2007-01-12
PCT/US2007/063825 WO2007106788A2 (en) 2006-03-10 2007-03-12 Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013003639A Division JP2013093606A (ja) 2006-03-10 2013-01-11 チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物

Publications (2)

Publication Number Publication Date
JP2009529579A JP2009529579A (ja) 2009-08-20
JP2009529579A5 true JP2009529579A5 (enExample) 2012-06-21

Family

ID=38510214

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009500578A Pending JP2009529579A (ja) 2006-03-10 2007-03-12 チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物
JP2013003639A Withdrawn JP2013093606A (ja) 2006-03-10 2013-01-11 チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013003639A Withdrawn JP2013093606A (ja) 2006-03-10 2013-01-11 チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物

Country Status (6)

Country Link
US (4) US7638074B2 (enExample)
EP (1) EP1994555A4 (enExample)
JP (2) JP2009529579A (enExample)
KR (3) KR101488855B1 (enExample)
TW (1) TWI421366B (enExample)
WO (1) WO2007106788A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
KR101488855B1 (ko) * 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
US20080118731A1 (en) * 2006-11-16 2008-05-22 Micron Technology, Inc. Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
JP5248025B2 (ja) * 2007-03-01 2013-07-31 東京エレクトロン株式会社 SrTiO3膜の成膜方法およびコンピュータ読取可能な記憶媒体
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US8455049B2 (en) * 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US20090226612A1 (en) * 2007-10-29 2009-09-10 Satoko Ogawa Alkaline earth metal containing precursor solutions
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
CN102203314B (zh) * 2008-10-29 2013-07-17 Jx日矿日石金属株式会社 包含稀土金属或它们的氧化物的靶的保存方法
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
US20110020547A1 (en) * 2009-07-21 2011-01-27 Julien Gatineau High dielectric constant films deposited at high temperature by atomic layer deposition
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
CN102011190B (zh) * 2010-12-22 2012-06-27 南京工业大学 一种利用纳米晶自组装过程制备纳米结构钛酸锶钡铁电薄膜的方法
US9790238B2 (en) 2012-05-04 2017-10-17 Korea Research Institute Of Chemical Technology Strontium precursor, method for preparing same, and method for forming thin film by using same
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
KR102424961B1 (ko) 2015-07-07 2022-07-25 삼성전자주식회사 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
KR102358566B1 (ko) * 2015-08-04 2022-02-04 삼성전자주식회사 물질막 형성 방법
CN119177427A (zh) 2016-07-19 2024-12-24 应用材料公司 可流动含硅膜的沉积
US20180187303A1 (en) * 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
TWI811273B (zh) * 2017-12-12 2023-08-11 以色列商量子設計材料有限公司 超導化合物及用於製造其之方法
KR102618630B1 (ko) * 2019-10-10 2023-12-26 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102490079B1 (ko) * 2019-12-23 2023-01-17 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102621816B1 (ko) * 2020-06-23 2024-01-04 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102639298B1 (ko) * 2020-10-30 2024-02-20 삼성에스디아이 주식회사 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102741165B1 (ko) * 2020-11-20 2024-12-09 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
CN112961166B (zh) * 2021-03-07 2022-02-25 苏州大学 一种催化制备吡喃并[2,3-b]吲哚-2-酮化合物的方法
KR102588453B1 (ko) 2021-11-04 2023-10-12 한국화학연구원 신규한 스트론튬 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법
KR102846838B1 (ko) 2023-08-18 2025-08-18 한국화학연구원 신규한 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법

Family Cites Families (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU768457A1 (ru) 1976-01-04 1980-10-07 Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом Катализатор дл очистки выхлопных газов от окислов азота
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4962214A (en) 1988-05-11 1990-10-09 Massachusettes Institute Of Technology Catalytic enantioselective addition of hydrocarbon equivalents to alpha, beta-unsaturated carbonyl compounds
US4927670A (en) * 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4915988A (en) 1988-06-22 1990-04-10 Georgia Tech Research Corporation Chemical vapor deposition of group IIA metals and precursors therefor
JPH02225317A (ja) * 1989-02-23 1990-09-07 Asahi Glass Co Ltd 化学的気相蒸着法による酸化物超伝導体の製造方法
US5204057A (en) 1989-07-14 1993-04-20 Kabushiki Kaisha Toshiba Highly purified titanium material and its named article, a sputtering target
US4960916A (en) 1989-09-29 1990-10-02 United States Of America As Represented By The Secretary Of The Navy Organometallic antimony compounds useful in chemical vapor deposition processes
US6218518B1 (en) 1990-07-06 2001-04-17 Advanced Technology Materials, Inc. Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
US5280012A (en) 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US6111124A (en) 1997-10-30 2000-08-29 Advanced Technology Materials, Inc. Lewis base adducts of anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5840897A (en) 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5711816A (en) 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US6110529A (en) 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5453494A (en) 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5225561A (en) 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US6511706B1 (en) 1990-07-06 2003-01-28 Advanced Technology Materials, Inc. MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5721043A (en) 1992-05-29 1998-02-24 Texas Instruments Incorporated Method of forming improved thin film dielectrics by Pb doping
JP2799134B2 (ja) 1992-09-22 1998-09-17 三菱電機株式会社 チタン酸バリウムストロンチウム系誘電体薄膜用cvd原料およびメモリー用キャパシタ
US20030152813A1 (en) * 1992-10-23 2003-08-14 Symetrix Corporation Lanthanide series layered superlattice materials for integrated circuit appalications
JP3547471B2 (ja) * 1994-03-09 2004-07-28 富士通株式会社 誘電体膜の気相成長方法
JPH0770747A (ja) 1994-04-06 1995-03-14 Mitsubishi Materials Corp 高純度誘電体薄膜形成用ターゲット材
US5837417A (en) 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5919522A (en) 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
JP3339554B2 (ja) 1995-12-15 2002-10-28 松下電器産業株式会社 プラズマディスプレイパネル及びその製造方法
AU2651197A (en) * 1996-05-16 1997-12-05 Nissan Chemical Industries Ltd. Processes for the preparation of pyrimidine compound
WO1997046915A1 (en) 1996-06-06 1997-12-11 Clariant International, Ltd Metal ion reduction of aminochromatic chromophores and their use in the synthesis of low metal bottom anti-reflective coatings for photoresists
JPH10273779A (ja) 1997-03-28 1998-10-13 Nippon Sanso Kk Cvd装置
US6024847A (en) 1997-04-30 2000-02-15 The Alta Group, Inc. Apparatus for producing titanium crystal and titanium
US6002036A (en) 1997-07-17 1999-12-14 Kabushikikaisha Kojundokagaku Kenkyusho Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US6177558B1 (en) 1997-11-13 2001-01-23 Protogene Laboratories, Inc. Method and composition for chemical synthesis using high boiling point organic solvents to control evaporation
US6277436B1 (en) 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6787186B1 (en) 1997-12-18 2004-09-07 Advanced Technology Materials, Inc. Method of controlled chemical vapor deposition of a metal oxide ceramic layer
US6111122A (en) 1998-04-28 2000-08-29 Advanced Technology Materials, Inc. Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same
US7098163B2 (en) 1998-08-27 2006-08-29 Cabot Corporation Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
GB0004852D0 (en) 2000-02-29 2000-04-19 Unilever Plc Ligand and complex for catalytically bleaching a substrate
US6562678B1 (en) * 2000-03-07 2003-05-13 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6342445B1 (en) 2000-05-15 2002-01-29 Micron Technology, Inc. Method for fabricating an SrRuO3 film
JP4621333B2 (ja) 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
US6440495B1 (en) 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
US20020090815A1 (en) 2000-10-31 2002-07-11 Atsushi Koike Method for forming a deposited film by plasma chemical vapor deposition
US6599447B2 (en) 2000-11-29 2003-07-29 Advanced Technology Materials, Inc. Zirconium-doped BST materials and MOCVD process forming same
EP1211333A3 (en) * 2000-12-01 2003-07-30 Japan Pionics Co., Ltd. Vaporizer for CVD apparatus
US6464779B1 (en) 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
KR100434489B1 (ko) 2001-03-22 2004-06-05 삼성전자주식회사 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법
JP2002285333A (ja) 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6479100B2 (en) 2001-04-05 2002-11-12 Applied Materials, Inc. CVD ruthenium seed for CVD ruthenium deposition
US6669990B2 (en) * 2001-06-25 2003-12-30 Samsung Electronics Co., Ltd. Atomic layer deposition method using a novel group IV metal precursor
US20030020122A1 (en) 2001-07-24 2003-01-30 Joo Jae Hyun Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby
JP4921652B2 (ja) * 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ.ヴェー. イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
KR100416602B1 (ko) 2001-08-08 2004-02-05 삼성전자주식회사 스택형 캐패시터의 제조 방법
US7701130B2 (en) 2001-08-24 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Luminous device with conductive film
US6605549B2 (en) 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
KR100443350B1 (ko) 2001-12-29 2004-08-09 주식회사 하이닉스반도체 스트론튬루테늄산화물의 단원자층 증착 방법
US6824816B2 (en) 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US7300038B2 (en) 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
ATE454483T1 (de) 2002-11-15 2010-01-15 Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US6989457B2 (en) 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
KR100505674B1 (ko) 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 mim캐패시터의 제조방법
JP2004300152A (ja) * 2003-03-20 2004-10-28 Mitsubishi Materials Corp 有機金属化合物の製造方法並びに該化合物により得られた金属含有薄膜
US6737313B1 (en) 2003-04-16 2004-05-18 Micron Technology, Inc. Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
US7095067B2 (en) 2003-05-27 2006-08-22 Lucent Technologies Inc. Oxidation-resistant conducting perovskites
JP2007523994A (ja) 2003-06-18 2007-08-23 アプライド マテリアルズ インコーポレイテッド バリヤ物質の原子層堆積
JP4312006B2 (ja) 2003-08-25 2009-08-12 株式会社Adeka 希土類金属錯体、薄膜形成用原料及び薄膜の製造方法
US7285308B2 (en) 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7005665B2 (en) 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US7211509B1 (en) 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
WO2006012052A2 (en) 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
KR100642635B1 (ko) 2004-07-06 2006-11-10 삼성전자주식회사 하이브리드 유전체막을 갖는 반도체 집적회로 소자들 및그 제조방법들
JP2006037123A (ja) * 2004-07-22 2006-02-09 Toyoshima Seisakusho:Kk 薄膜用cvd原料及びそれを用いて得られる薄膜
KR100632948B1 (ko) 2004-08-06 2006-10-11 삼성전자주식회사 칼코겐화합물 스퍼터링 형성 방법 및 이를 이용한 상변화 기억 소자 형성 방법
US7300873B2 (en) 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
US7250367B2 (en) 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors
KR100652378B1 (ko) 2004-09-08 2006-12-01 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법
US7390360B2 (en) 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
US7435679B2 (en) 2004-12-07 2008-10-14 Intel Corporation Alloyed underlayer for microelectronic interconnects
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
KR100618879B1 (ko) 2004-12-27 2006-09-01 삼성전자주식회사 게르마늄 전구체, 이를 이용하여 형성된 gst 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
US20060172067A1 (en) 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
KR100585175B1 (ko) 2005-01-31 2006-05-30 삼성전자주식회사 화학 기상 증착법에 의한 GeSbTe 박막의 제조방법
KR100688532B1 (ko) 2005-02-14 2007-03-02 삼성전자주식회사 텔루르 전구체, 이를 이용하여 제조된 Te-함유 칼코게나이드(chalcogenide) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자
US20060288928A1 (en) 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US7364989B2 (en) 2005-07-01 2008-04-29 Sharp Laboratories Of America, Inc. Strain control of epitaxial oxide films using virtual substrates
US20070049021A1 (en) 2005-08-31 2007-03-01 Micron Technology, Inc. Atomic layer deposition method
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US20070054487A1 (en) 2005-09-06 2007-03-08 Applied Materials, Inc. Atomic layer deposition processes for ruthenium materials
US20070190362A1 (en) 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
KR100891779B1 (ko) 2005-11-28 2009-04-07 허니웰 인터내셔날 인코포레이티드 증착 공정용의 유기금속 전구체 및 관련된 중간체, 이들의제조 방법, 및 이들의 사용 방법
US20070154637A1 (en) 2005-12-19 2007-07-05 Rohm And Haas Electronic Materials Llc Organometallic composition
KR101488855B1 (ko) 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
TW200831694A (en) 2007-01-17 2008-08-01 Advanced Tech Materials Precursor compositions for ALD/CVD of group II ruthenate thin films
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
WO2008100616A2 (en) * 2007-02-15 2008-08-21 The Board Of Trustees Of The Leland Stanford Junior University Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadienyl precursor
KR20080079514A (ko) 2007-02-27 2008-09-01 삼성전자주식회사 반도체 소자의 제조방법
JP2008244298A (ja) 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
KR101797880B1 (ko) 2007-04-09 2017-11-15 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
US20080254218A1 (en) 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
JP5437594B2 (ja) 2007-06-05 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 有機金属化合物
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
KR101533844B1 (ko) * 2007-06-26 2015-07-03 가부시키가이샤 코준도카가쿠 켄큐쇼 스트론튬 함유 박막 형성용 원료 및 그 제조 방법
KR100883139B1 (ko) 2007-06-28 2009-02-10 주식회사 하이닉스반도체 루테늄계 전극을 구비한 캐패시터 및 그 제조 방법
US8455049B2 (en) 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
JP4993294B2 (ja) 2007-09-05 2012-08-08 富士フイルム株式会社 ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
US20090087561A1 (en) 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
EP2271789A1 (en) 2008-03-26 2011-01-12 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of ternary oxide films containing ruthenium and alkali earth metals
US20090275164A1 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8574675B2 (en) 2009-03-17 2013-11-05 Advanced Technology Materials, Inc. Method and composition for depositing ruthenium with assistive metal species
JP2011181828A (ja) 2010-03-03 2011-09-15 Fujifilm Corp 圧電体膜とその製造方法、圧電素子および液体吐出装置
JP5616126B2 (ja) 2010-05-27 2014-10-29 富士フイルム株式会社 ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置

Similar Documents

Publication Publication Date Title
JP2009529579A5 (enExample)
TWI549958B (zh) 鉬(iv)醯胺前驅物及其於原子層沈積之用途
JP6242026B2 (ja) Ald/cvdシリコン含有膜用のオルガノシラン前駆体
KR101488855B1 (ko) 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
JP5548748B2 (ja) ハフニウム系薄膜形成方法およびハフニウム系薄膜形成材料
TWI510495B (zh) 具有優良階梯覆蓋性之釕化合物以及藉由沈積該具有優良階梯覆蓋性之釕化合物所形成之薄膜
KR101659610B1 (ko) 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
WO2017043620A1 (ja) 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP2017007952A (ja) 新規な化合物、薄膜形成用原料及び薄膜の製造方法
KR101676060B1 (ko) 보조 금속 종과 함께 루테늄을 침착시키기 위한 방법 및 조성물
US10752992B2 (en) Atomic layer deposition method of metal-containing thin film
KR20160082350A (ko) 유기 13족 전구체 및 이를 이용한 박막 증착 방법
KR102375179B1 (ko) 알콕사이드 화합물, 박막 형성용 원료, 박막의 제조방법 및 알코올 화합물
JP4211300B2 (ja) 有機チタン化合物及びこれを含む溶液原料並びにこれから作られるチタン含有誘電体薄膜
US20250034181A1 (en) Silicon-containing group 4 precursors and deposition of metal-containing films
KR100514780B1 (ko) 반도체 박막 증착용 화합물 및 이를 이용한 박막 증착 방법
JP2005187356A (ja) 有機金属化合物及びその溶液原料並びに該化合物を用いた金属含有膜の形成方法
KR20230086527A (ko) 반도체 박막 제조를 위한 기상 증착용 비대칭 구조의 신규한 4족 전이금속화합물 및 그 제조방법
TW202336028A (zh) 化合物、含金屬膜之形成方法及化合物之製造方法