TWI421366B - 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物 - Google Patents

鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物 Download PDF

Info

Publication number
TWI421366B
TWI421366B TW096108423A TW96108423A TWI421366B TW I421366 B TWI421366 B TW I421366B TW 096108423 A TW096108423 A TW 096108423A TW 96108423 A TW96108423 A TW 96108423A TW I421366 B TWI421366 B TW I421366B
Authority
TW
Taiwan
Prior art keywords
group
precursor
alkyl
substituents
substrate
Prior art date
Application number
TW096108423A
Other languages
English (en)
Chinese (zh)
Other versions
TW200801229A (en
Inventor
Xu Chongying
Chen Tianniu
m cameron Thomas
F Roeder Jeffrey
H Baum Thomas
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200801229A publication Critical patent/TW200801229A/zh
Application granted granted Critical
Publication of TWI421366B publication Critical patent/TWI421366B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW096108423A 2006-03-10 2007-03-12 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物 TWI421366B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78129106P 2006-03-10 2006-03-10
US79129906P 2006-04-12 2006-04-12
US84486706P 2006-09-15 2006-09-15
US88472807P 2007-01-12 2007-01-12

Publications (2)

Publication Number Publication Date
TW200801229A TW200801229A (en) 2008-01-01
TWI421366B true TWI421366B (zh) 2014-01-01

Family

ID=38510214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108423A TWI421366B (zh) 2006-03-10 2007-03-12 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物

Country Status (6)

Country Link
US (4) US7638074B2 (enExample)
EP (1) EP1994555A4 (enExample)
JP (2) JP2009529579A (enExample)
KR (3) KR101488855B1 (enExample)
TW (1) TWI421366B (enExample)
WO (1) WO2007106788A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
KR101488855B1 (ko) * 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
US20080118731A1 (en) * 2006-11-16 2008-05-22 Micron Technology, Inc. Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
JP5248025B2 (ja) * 2007-03-01 2013-07-31 東京エレクトロン株式会社 ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US8455049B2 (en) * 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US20090226612A1 (en) * 2007-10-29 2009-09-10 Satoko Ogawa Alkaline earth metal containing precursor solutions
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
CN102203314B (zh) * 2008-10-29 2013-07-17 Jx日矿日石金属株式会社 包含稀土金属或它们的氧化物的靶的保存方法
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
US20110020547A1 (en) * 2009-07-21 2011-01-27 Julien Gatineau High dielectric constant films deposited at high temperature by atomic layer deposition
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
CN102011190B (zh) * 2010-12-22 2012-06-27 南京工业大学 一种利用纳米晶自组装过程制备纳米结构钛酸锶钡铁电薄膜的方法
US9790238B2 (en) 2012-05-04 2017-10-17 Korea Research Institute Of Chemical Technology Strontium precursor, method for preparing same, and method for forming thin film by using same
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
US10913754B2 (en) 2015-07-07 2021-02-09 Samsung Electronics Co., Ltd. Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
KR102424961B1 (ko) 2015-07-07 2022-07-25 삼성전자주식회사 란타넘 화합물 및 그 제조 방법과 란타넘 전구체 조성물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
KR102358566B1 (ko) * 2015-08-04 2022-02-04 삼성전자주식회사 물질막 형성 방법
CN119177427A (zh) 2016-07-19 2024-12-24 应用材料公司 可流动含硅膜的沉积
US20180187303A1 (en) * 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
TWI811273B (zh) * 2017-12-12 2023-08-11 以色列商量子設計材料有限公司 超導化合物及用於製造其之方法
KR102618630B1 (ko) * 2019-10-10 2023-12-26 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102490079B1 (ko) * 2019-12-23 2023-01-17 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102621816B1 (ko) * 2020-06-23 2024-01-04 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102639298B1 (ko) * 2020-10-30 2024-02-20 삼성에스디아이 주식회사 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102741165B1 (ko) * 2020-11-20 2024-12-09 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
CN112961166B (zh) * 2021-03-07 2022-02-25 苏州大学 一种催化制备吡喃并[2,3-b]吲哚-2-酮化合物的方法
KR102588453B1 (ko) 2021-11-04 2023-10-12 한국화학연구원 신규한 스트론튬 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법
KR102846838B1 (ko) 2023-08-18 2025-08-18 한국화학연구원 신규한 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000015865A1 (en) * 1998-09-11 2000-03-23 Asm Microchemistry Oy Method for growing oxide thin films containing barium and strontium
US20030072882A1 (en) * 2001-08-03 2003-04-17 Jaakko Niinisto Method of depositing rare earth oxide thin films
US20040197946A1 (en) * 2002-08-28 2004-10-07 Micron Technology, Inc. Systems and methods for forming strontium-and/or barium-containing layers
US20050009325A1 (en) * 2003-06-18 2005-01-13 Hua Chung Atomic layer deposition of barrier materials
US20050217575A1 (en) * 2004-03-31 2005-10-06 Dan Gealy Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures

Family Cites Families (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU768457A1 (ru) 1976-01-04 1980-10-07 Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом Катализатор дл очистки выхлопных газов от окислов азота
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4962214A (en) 1988-05-11 1990-10-09 Massachusettes Institute Of Technology Catalytic enantioselective addition of hydrocarbon equivalents to alpha, beta-unsaturated carbonyl compounds
US4927670A (en) * 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4915988A (en) 1988-06-22 1990-04-10 Georgia Tech Research Corporation Chemical vapor deposition of group IIA metals and precursors therefor
JPH02225317A (ja) * 1989-02-23 1990-09-07 Asahi Glass Co Ltd 化学的気相蒸着法による酸化物超伝導体の製造方法
US5204057A (en) 1989-07-14 1993-04-20 Kabushiki Kaisha Toshiba Highly purified titanium material and its named article, a sputtering target
US4960916A (en) 1989-09-29 1990-10-02 United States Of America As Represented By The Secretary Of The Navy Organometallic antimony compounds useful in chemical vapor deposition processes
US6218518B1 (en) 1990-07-06 2001-04-17 Advanced Technology Materials, Inc. Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
US5280012A (en) 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US6111124A (en) 1997-10-30 2000-08-29 Advanced Technology Materials, Inc. Lewis base adducts of anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5840897A (en) 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5711816A (en) 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US6110529A (en) 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5453494A (en) 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5225561A (en) 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US6511706B1 (en) 1990-07-06 2003-01-28 Advanced Technology Materials, Inc. MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5721043A (en) 1992-05-29 1998-02-24 Texas Instruments Incorporated Method of forming improved thin film dielectrics by Pb doping
JP2799134B2 (ja) 1992-09-22 1998-09-17 三菱電機株式会社 チタン酸バリウムストロンチウム系誘電体薄膜用ｃｖｄ原料およびメモリー用キャパシタ
US20030152813A1 (en) * 1992-10-23 2003-08-14 Symetrix Corporation Lanthanide series layered superlattice materials for integrated circuit appalications
JP3547471B2 (ja) * 1994-03-09 2004-07-28 富士通株式会社 誘電体膜の気相成長方法
JPH0770747A (ja) 1994-04-06 1995-03-14 Mitsubishi Materials Corp 高純度誘電体薄膜形成用ターゲット材
US5837417A (en) 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5919522A (en) 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
JP3339554B2 (ja) 1995-12-15 2002-10-28 松下電器産業株式会社 プラズマディスプレイパネル及びその製造方法
AU2651197A (en) * 1996-05-16 1997-12-05 Nissan Chemical Industries Ltd. Processes for the preparation of pyrimidine compound
WO1997046915A1 (en) 1996-06-06 1997-12-11 Clariant International, Ltd Metal ion reduction of aminochromatic chromophores and their use in the synthesis of low metal bottom anti-reflective coatings for photoresists
JPH10273779A (ja) 1997-03-28 1998-10-13 Nippon Sanso Kk Ｃｖｄ装置
US6024847A (en) 1997-04-30 2000-02-15 The Alta Group, Inc. Apparatus for producing titanium crystal and titanium
US6002036A (en) 1997-07-17 1999-12-14 Kabushikikaisha Kojundokagaku Kenkyusho Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US6177558B1 (en) 1997-11-13 2001-01-23 Protogene Laboratories, Inc. Method and composition for chemical synthesis using high boiling point organic solvents to control evaporation
US6277436B1 (en) 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6787186B1 (en) 1997-12-18 2004-09-07 Advanced Technology Materials, Inc. Method of controlled chemical vapor deposition of a metal oxide ceramic layer
US6111122A (en) 1998-04-28 2000-08-29 Advanced Technology Materials, Inc. Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same
US7098163B2 (en) 1998-08-27 2006-08-29 Cabot Corporation Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells
GB0004852D0 (en) 2000-02-29 2000-04-19 Unilever Plc Ligand and complex for catalytically bleaching a substrate
US6562678B1 (en) * 2000-03-07 2003-05-13 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
US6342445B1 (en) 2000-05-15 2002-01-29 Micron Technology, Inc. Method for fabricating an SrRuO3 film
JP4621333B2 (ja) 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
US6440495B1 (en) 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
US20020090815A1 (en) 2000-10-31 2002-07-11 Atsushi Koike Method for forming a deposited film by plasma chemical vapor deposition
US6599447B2 (en) 2000-11-29 2003-07-29 Advanced Technology Materials, Inc. Zirconium-doped BST materials and MOCVD process forming same
EP1211333A3 (en) * 2000-12-01 2003-07-30 Japan Pionics Co., Ltd. Vaporizer for CVD apparatus
US6464779B1 (en) 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
KR100434489B1 (ko) 2001-03-22 2004-06-05 삼성전자주식회사 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법
JP2002285333A (ja) 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6479100B2 (en) 2001-04-05 2002-11-12 Applied Materials, Inc. CVD ruthenium seed for CVD ruthenium deposition
US6669990B2 (en) * 2001-06-25 2003-12-30 Samsung Electronics Co., Ltd. Atomic layer deposition method using a novel group IV metal precursor
US20030020122A1 (en) 2001-07-24 2003-01-30 Joo Jae Hyun Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby
KR100416602B1 (ko) 2001-08-08 2004-02-05 삼성전자주식회사 스택형 캐패시터의 제조 방법
US7701130B2 (en) 2001-08-24 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Luminous device with conductive film
US6605549B2 (en) 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
KR100443350B1 (ko) 2001-12-29 2004-08-09 주식회사 하이닉스반도체 스트론튬루테늄산화물의 단원자층 증착 방법
US6824816B2 (en) 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US7300038B2 (en) 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
ATE454483T1 (de) 2002-11-15 2010-01-15 Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US6989457B2 (en) 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
KR100505674B1 (ko) 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
JP2004300152A (ja) * 2003-03-20 2004-10-28 Mitsubishi Materials Corp 有機金属化合物の製造方法並びに該化合物により得られた金属含有薄膜
US6737313B1 (en) 2003-04-16 2004-05-18 Micron Technology, Inc. Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
US7095067B2 (en) 2003-05-27 2006-08-22 Lucent Technologies Inc. Oxidation-resistant conducting perovskites
JP4312006B2 (ja) 2003-08-25 2009-08-12 株式会社Ａｄｅｋａ 希土類金属錯体、薄膜形成用原料及び薄膜の製造方法
US7285308B2 (en) 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US7005665B2 (en) 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
US7211509B1 (en) 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
WO2006012052A2 (en) 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
KR100642635B1 (ko) 2004-07-06 2006-11-10 삼성전자주식회사 하이브리드 유전체막을 갖는 반도체 집적회로 소자들 및그 제조방법들
JP2006037123A (ja) * 2004-07-22 2006-02-09 Toyoshima Seisakusho:Kk 薄膜用ｃｖｄ原料及びそれを用いて得られる薄膜
KR100632948B1 (ko) 2004-08-06 2006-10-11 삼성전자주식회사 칼코겐화합물 스퍼터링 형성 방법 및 이를 이용한 상변화 기억 소자 형성 방법
US7300873B2 (en) 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
US7250367B2 (en) 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors
KR100652378B1 (ko) 2004-09-08 2006-12-01 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법
US7390360B2 (en) 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
US7435679B2 (en) 2004-12-07 2008-10-14 Intel Corporation Alloyed underlayer for microelectronic interconnects
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
KR100618879B1 (ko) 2004-12-27 2006-09-01 삼성전자주식회사 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자
US20060172067A1 (en) 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
KR100585175B1 (ko) 2005-01-31 2006-05-30 삼성전자주식회사 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법
KR100688532B1 (ko) 2005-02-14 2007-03-02 삼성전자주식회사 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자
US20060288928A1 (en) 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US7364989B2 (en) 2005-07-01 2008-04-29 Sharp Laboratories Of America, Inc. Strain control of epitaxial oxide films using virtual substrates
US20070049021A1 (en) 2005-08-31 2007-03-01 Micron Technology, Inc. Atomic layer deposition method
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US20070054487A1 (en) 2005-09-06 2007-03-08 Applied Materials, Inc. Atomic layer deposition processes for ruthenium materials
US20070190362A1 (en) 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
KR100891779B1 (ko) 2005-11-28 2009-04-07 허니웰 인터내셔날 인코포레이티드 증착 공정용의 유기금속 전구체 및 관련된 중간체, 이들의제조 방법, 및 이들의 사용 방법
US20070154637A1 (en) 2005-12-19 2007-07-05 Rohm And Haas Electronic Materials Llc Organometallic composition
KR101488855B1 (ko) 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
TW200831694A (en) 2007-01-17 2008-08-01 Advanced Tech Materials Precursor compositions for ALD/CVD of group II ruthenate thin films
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
WO2008100616A2 (en) * 2007-02-15 2008-08-21 The Board Of Trustees Of The Leland Stanford Junior University Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadienyl precursor
KR20080079514A (ko) 2007-02-27 2008-09-01 삼성전자주식회사 반도체 소자의 제조방법
JP2008244298A (ja) 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
KR101797880B1 (ko) 2007-04-09 2017-11-15 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 구리 배선용 코발트 질화물층 및 이의 제조방법
US20080254218A1 (en) 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
JP5437594B2 (ja) 2007-06-05 2014-03-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
KR101533844B1 (ko) * 2007-06-26 2015-07-03 가부시키가이샤 코준도카가쿠 켄큐쇼 스트론튬 함유 박막 형성용 원료 및 그 제조 방법
KR100883139B1 (ko) 2007-06-28 2009-02-10 주식회사 하이닉스반도체 루테늄계 전극을 구비한 캐패시터 및 그 제조 방법
US8455049B2 (en) 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
JP4993294B2 (ja) 2007-09-05 2012-08-08 富士フイルム株式会社 ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
US20090087561A1 (en) 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
EP2271789A1 (en) 2008-03-26 2011-01-12 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of ternary oxide films containing ruthenium and alkali earth metals
US20090275164A1 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8574675B2 (en) 2009-03-17 2013-11-05 Advanced Technology Materials, Inc. Method and composition for depositing ruthenium with assistive metal species
JP2011181828A (ja) 2010-03-03 2011-09-15 Fujifilm Corp 圧電体膜とその製造方法、圧電素子および液体吐出装置
JP5616126B2 (ja) 2010-05-27 2014-10-29 富士フイルム株式会社 ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000015865A1 (en) * 1998-09-11 2000-03-23 Asm Microchemistry Oy Method for growing oxide thin films containing barium and strontium
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US20030072882A1 (en) * 2001-08-03 2003-04-17 Jaakko Niinisto Method of depositing rare earth oxide thin films
US20040197946A1 (en) * 2002-08-28 2004-10-07 Micron Technology, Inc. Systems and methods for forming strontium-and/or barium-containing layers
US20050009325A1 (en) * 2003-06-18 2005-01-13 Hua Chung Atomic layer deposition of barrier materials
US20050217575A1 (en) * 2004-03-31 2005-10-06 Dan Gealy Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers

Also Published As

Publication number Publication date
TW200801229A (en) 2008-01-01
US7638074B2 (en) 2009-12-29
US20120141675A1 (en) 2012-06-07
US20100062150A1 (en) 2010-03-11
WO2007106788A2 (en) 2007-09-20
JP2013093606A (ja) 2013-05-16
WO2007106788A3 (en) 2007-12-13
JP2009529579A (ja) 2009-08-20
EP1994555A4 (en) 2009-12-16
US20140295071A1 (en) 2014-10-02
KR20160027244A (ko) 2016-03-09
EP1994555A2 (en) 2008-11-26
KR20080113053A (ko) 2008-12-26
US20090074965A1 (en) 2009-03-19
US8784936B2 (en) 2014-07-22
US9534285B2 (en) 2017-01-03
US8206784B2 (en) 2012-06-26
KR20140139636A (ko) 2014-12-05
KR101488855B1 (ko) 2015-02-04

Similar Documents

Publication Publication Date Title
TWI421366B (zh) 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物
US10914001B2 (en) Volatile dihydropyrazinly and dihydropyrazine metal complexes
US8524931B2 (en) Precursor compositions for ALD/CVD of group II ruthenate thin films
US8455049B2 (en) Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
KR101521198B1 (ko) 화학적 상 증착법에 의해 금속-함유 박막을 형성하는 방법
KR101577676B1 (ko) 화학적 상증착 공정에 사용되는 유기금속 전구체
JP6865306B2 (ja) ニオブ含有膜形成用組成物及びニオブ含有膜の蒸着
US20100018439A1 (en) Precursors for cvd/ald of metal-containing films
KR20100016477A (ko) Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체
US20100209610A1 (en) Group iv complexes as cvd and ald precursors for forming metal-containing thin films
TW200948820A (en) Organometallic compounds, processes and methods of use
TW201925515A (zh) 用於氣相沈積含鈦膜的形成含鈦膜之組成物
TW201524988A (zh) 具有用於ＴｉＯ原子層沉積的臭氧活化配位基之環戊二烯鈦醇鹽
KR20180098578A (ko) 코발트-함유 막 형성 조성물, 이의 합성, 및 막 증착에서의 용도
JP4542506B2 (ja) 第８（ｖｉｉｉ）族メタロセン前駆物質を用いた蒸着法
CN101443891A (zh) 用于钛酸盐、镧酸盐、及钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物