KR101488855B1 - 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 - Google Patents

티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 Download PDF

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KR101488855B1
KR101488855B1 KR1020087024730A KR20087024730A KR101488855B1 KR 101488855 B1 KR101488855 B1 KR 101488855B1 KR 1020087024730 A KR1020087024730 A KR 1020087024730A KR 20087024730 A KR20087024730 A KR 20087024730A KR 101488855 B1 KR101488855 B1 KR 101488855B1
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strontium
alkyl
precursor
precursor composition
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KR20080113053A (ko
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총잉 쉬
티엔뉴 천
토머스 엠 캐머론
제프리 에프 로에더
토머스 에이치 바움
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어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020087024730A 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 Active KR101488855B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US78129106P 2006-03-10 2006-03-10
US60/781,291 2006-03-10
US79129906P 2006-04-12 2006-04-12
US60/791,299 2006-04-12
US84486706P 2006-09-15 2006-09-15
US60/844,867 2006-09-15
US88472807P 2007-01-12 2007-01-12
US60/884,728 2007-01-12
PCT/US2007/063825 WO2007106788A2 (en) 2006-03-10 2007-03-12 Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Related Child Applications (1)

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KR1020147032693A Division KR20140139636A (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물

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KR20080113053A KR20080113053A (ko) 2008-12-26
KR101488855B1 true KR101488855B1 (ko) 2015-02-04

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KR1020167004596A Ceased KR20160027244A (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
KR1020147032693A Ceased KR20140139636A (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
KR1020087024730A Active KR101488855B1 (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물

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KR1020167004596A Ceased KR20160027244A (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
KR1020147032693A Ceased KR20140139636A (ko) 2006-03-10 2007-03-12 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물

Country Status (6)

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US (4) US7638074B2 (enExample)
EP (1) EP1994555A4 (enExample)
JP (2) JP2009529579A (enExample)
KR (3) KR20160027244A (enExample)
TW (1) TWI421366B (enExample)
WO (1) WO2007106788A2 (enExample)

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US11482593B2 (en) 2019-10-10 2022-10-25 Samsung Sdi Co., Ltd. Composition for depositing thin film, manufacturing method for thin film using the composition, thin film manufactured from the composition, and semiconductor device including the thin film

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EP1994555A4 (en) 2006-03-10 2009-12-16 Advanced Tech Materials PRECURSOR COMPOSITIONS FOR STORING ATOMIC LAYERS AND CHEMICAL PREVENTION OF TITANIUM, LANTHANATE AND DIELECTRIC TANTALATE FILMS
US20080118731A1 (en) * 2006-11-16 2008-05-22 Micron Technology, Inc. Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
JP5248025B2 (ja) * 2007-03-01 2013-07-31 東京エレクトロン株式会社 ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体
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KR102358566B1 (ko) * 2015-08-04 2022-02-04 삼성전자주식회사 물질막 형성 방법
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TW202346629A (zh) * 2017-12-12 2023-12-01 以色列商量子設計材料有限公司 超導化合物及用於製造其之方法
KR102490079B1 (ko) * 2019-12-23 2023-01-17 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102621816B1 (ko) * 2020-06-23 2024-01-04 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
KR102639298B1 (ko) * 2020-10-30 2024-02-20 삼성에스디아이 주식회사 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자
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CN112961166B (zh) * 2021-03-07 2022-02-25 苏州大学 一种催化制备吡喃并[2,3-b]吲哚-2-酮化合物的方法
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KR102846838B1 (ko) 2023-08-18 2025-08-18 한국화학연구원 신규한 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법

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