US20110162322A1 - Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof - Google Patents

Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof Download PDF

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US20110162322A1
US20110162322A1 US13/119,377 US200913119377A US2011162322A1 US 20110162322 A1 US20110162322 A1 US 20110162322A1 US 200913119377 A US200913119377 A US 200913119377A US 2011162322 A1 US2011162322 A1 US 2011162322A1
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target
oxide
rare earth
earth metal
storing
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Kazuyuki Satoh
Yoshimasa Koido
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D81/00Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents
    • B65D81/24Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants
    • B65D81/26Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants with provision for draining away, or absorbing, or removing by ventilation, fluids, e.g. exuded by contents; Applications of corrosion inhibitors or desiccators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F15/00Other methods of preventing corrosion or incrustation

Definitions

  • the present invention relates to a method for storing a target comprising a rare earth metal or oxide thereof that is easily pulverized due to oxidation or hydroxylation.
  • Rare earth metals are contained in the earth's crust as a mixed composite oxide. Rare-earth elements are so called because they are separated from relatively rare minerals, but they are not that rare in light of the overall earth's crust. In recent years, rare earth metals are attracting attention as an electronic material, and research and development for using rare earth metals are being promoted.
  • lanthanum is a white metal having an atomic number of 57 and an atomic weight of 138.9, and comprises a double hexagonal close-packed structure at normal temperature.
  • Lanthanum has a melting point of 921° C., boiling point of 3500° C., and density of 6.15 g/cm 3 , its surface is oxidized in the atmosphere, and it gradually melts in water.
  • Lanthanum is a metal that is attracting attention as an electronic material such as a metal gate material or a high-dielectric constant (High-k) material. Rare earth elements other than lanthanum also have attributes similar to lanthanum.
  • a rare earth metal such as lanthanum is a material in which high purification is difficult to achieve since it is easily oxidized during the refining process.
  • a rare earth metal such as lanthanum is left in the atmosphere, there is a problem in that the handling thereof is difficult since it will become oxidized and tarnished in a short time.
  • rare earth metals such as lanthanum and their oxides are still in the research phase.
  • a rare earth metal or oxide thereof itself exists as a sputtering target material, it is possible to form a thin film of such rare earth metal or oxide thereof on a substrate. It will be easy to study the behavior at the interface with the silicon substrate, and the properties of a high-dielectric gate insulator film or the like after forming a rare earth metal compound. There is also a significant advantage in that the freedom of the target as a product will increase.
  • a lanthanum sputtering target is prepared, as described above, it becomes oxidized in a short time in the atmosphere.
  • a stable oxide layer is formed on a metal target surface, but since it is extremely thin, it peels off during the initial stage of sputtering and does not affect the sputtering characteristics significantly.
  • the oxide layer becomes thick, and deterioration of the electrical conductivity will occur and thereby cause defective sputtering.
  • the lanthanum sputtering target is left in the atmosphere for a long time, it reacts with the moisture in the air to become covered with white hydroxide powder and ultimately become pulverized, and it may even cause a problem of not allowing normal sputtering to be performed.
  • the target is prepared, it is necessary to take measures for preventing oxidation and hydroxylation such as by immediately vacuum-packing or coating the target with fats and oils.
  • the standard method is to store the rare earth metals in mineral oil in order to prevent such rare earth metals from being exposed to the air.
  • it is necessary to clean the target before its use in order to remove the mineral oil.
  • the cleaning of the target itself is difficult due to its reactivity with oxygen, moisture and carbon dioxide.
  • Patent Document 1 International Publication No. W02005/037649
  • Patent Document 2 Japanese Laid-Open Patent Publication No. 2002-212718
  • Patent Document 3 Japanese Laid-Open Patent Publication No. 2001-240959
  • Patent Document 4 Japanese Laid-Open Patent Publication No. H8-246135
  • Patent Document 5 Japanese Laid-Open Patent Publication No. H4-231461
  • An object of this invention is to provide technology for allowing the long-term storage of a sputtering target in enabled condition by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to residual air or ingress of air.
  • the present invention provides:
  • the present invention additionally provides:
  • the present invention further provides:
  • FIG. 1 A diagram showing an example where the surface and side face of the La target are thinly coated with La oxide powder and vacuum packing is performed thereto.
  • FIG. 2 A diagram showing an example where La oxide powder is placed in a space due to the unevenness (difference in level) between the La target and BP (backing plate) and vacuum packing is performed thereto.
  • FIG. 3 A diagram showing an example where a La target is placed in a metallic container, La oxide powder is filled around the periphery of the La target, ambient air is once replaced with argon having a dew point of ⁇ 80° C. or less, and vacuum sealing is subsequently performed thereto.
  • FIG. 4 A diagram showing an example where a metal alloy target comprising La and Er is placed in a metallic container, a sintered La oxide block is placed at the uneven part between the target and BP, air in the container is replaced with argon gas, and vacuuming is subsequently performed thereto.
  • FIG. 5 A diagram showing an example where the La target is subject to vacuum sealing with a film.
  • FIG. 6 A diagram showing an example where the La target is subject to vacuum sealing with a film, and silica gel is placed as a desiccant.
  • FIG. 7 A diagram showing an example where the La 2 O 3 target is subject to vacuum sealing with a film.
  • Rare earths in particular lanthanum and lanthanum oxide, are known to have extremely strong hygroscopic properties (reactivity with moisture).
  • the challenge to date was how to prevent lanthanum and lanthanum oxide from absorbing moisture as much as possible, and how to store lanthanum and lanthanum oxide in an environment with minimal moisture.
  • the oxidation or hydroxylation of the lanthanum target body can be prevented by coating, mounting or placing lanthanum oxide (powder or sintered compact of a plate or block) on the target surface upon storing the lanthanum target.
  • moisture when storing a lanthanum oxide target, moisture can be absorbed and eliminated more effectively by enclosing the powdered or granular lanthanum oxide of larger surface area and, therefore, degradation of the target caused by hydroxylation can be prevented.
  • the method for storing a target comprising a rare earth metal or oxide thereof according to the present invention is to introduce, as a desiccant, oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored into a storage container or a film-type seal.
  • an oxide of the rare earth metal with the greatest hygroscopic property can be used as a desiccant.
  • encapsulating and storing method for target it is preferable to prevent the ingress of outside air as much as possible. Vacuum sealing can be performed as one such method. Moreover, when vacuum sealing and storing the target, it is preferable to once replace the inside of the container or the film-type seal with inert gas having a dew point of ⁇ 80° C. or less and thereafter perform vacuum sealing.
  • flexible film may be used in the form of a hermetic bag and subject to vacuum sealing.
  • inert gas having a dew point of ⁇ 80° C. or less may be filled and sealed as the method for storing a target. All of the foregoing methods prevent the ingress of outside air.
  • a target is generally bonded to a backing plate.
  • a flexible film in the form of a hermetic bag and performing vacuum sealing thereto, unevenness will inevitably arise between the target and the backing plate, and a space is likely to be formed. Outside air is easily accumulated in such space. Pulverization of the target tends to advance from such space.
  • the rare earth oxide to be used as the desiccant is preferably in the form of powder or granule of large surface area. Nevertheless, it is effective to simply place a small piece of rare earth oxide at a location where outside air is easily accumulated.
  • the method for storing a target according to the present invention is particularly effective for a lanthanum target or a target containing lanthanum as the rare earth metal configuring the target.
  • the foregoing rare earth oxide to be used as the desiccant is lanthanum oxide. This is ironic, but lanthanum oxide that is most easily hydroxylated has the greatest inhibitory effect on hydroxylation of a target comprising a rare earth metal or oxide thereof in the method for storing a target comprising a rare earth metal or oxide thereof.
  • Table 1 shows the favorable examples of the flexible film to be used in encapsulating and storing the target, as well as the non-favorable examples.
  • Table 1 the examples having properties of GX Barrier (product name) or higher are effective. As shown in Table 1, GX Barrier (product name) and a bag containing Al foil are favorable. Table 1 shows representative examples, and it goes without saying that other flexible films may be used so as long as they satisfy the foregoing conditions.
  • the lanthanum oxide powder absorbs the moisture remaining inside the vacuum package and the moisture that penetrates the film and is fixed as lanthanum hydroxide.
  • this is effective in preventing the phenomenon where the La target surface reacts with moisture to become hydroxide and be pulverized.
  • lanthanum oxide absorbs the moisture remaining after the vacuuming and is fixed as lanthanum hydroxide.
  • this is effective in preventing the phenomenon where La reacts with moisture to become hydroxide and be pulverized.
  • lanthanum oxide absorbs the moisture remaining after the vacuuming and is fixed as lanthanum hydroxide.
  • this is effective in preventing the phenomenon where La reacts with moisture to become hydroxide and be pulverized.
  • FIG. 5 This is an example where the La target was subject to vacuum sealing with a film.
  • FIG. 5 A specific example is shown in FIG. 5 .
  • the small amount of moisture remaining in the space created between the vacuum-packing film and the target reacted with the La target, and La became lanthanum hydroxide. It resulted in pulverization.
  • silica gel When silica gel is placed as shown in FIG. 6 , pulverization progressed faster than the case of not placing silica gel. The reason for this is considered to be that the moisture adsorbed by the silica gel became desorbed and discharged inside the vacuum-packing film, and the reaction of moisture and La was promoted and resulted in lanthanum hydroxide. In light of the above, it is evident that silica gel that is used as a general desiccant is useless, or even undesirable, in preventing the pulverization phenomenon of the rare earth metal or rare earth metal oxide.
  • the method for storing a target comprising a rare earth metal or oxide thereof according to the present invention is to introduce, as a desiccant, oxide of the same rare earth metal as the material of the target comprising the rare earth metal or oxide thereof to be stored into a storage container or a film-type seal. It is thereby possible to effectively inhibit the condition where the target reacts with the moisture in the atmosphere and becomes covered with white hydroxide powder.
  • targets can be stably supplied as an electronic material such as a metal gate material or a high-dielectric constant (High-k) material, and the present invention is extremely useful industrially.
  • an electronic material such as a metal gate material or a high-dielectric constant (High-k) material

Abstract

Provided is a method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the storage container or the film-type seal. This invention aims to provide technology for enabling the long-term storage of a target by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to the ingress of air.

Description

    TECHNICAL FIELD
  • The present invention relates to a method for storing a target comprising a rare earth metal or oxide thereof that is easily pulverized due to oxidation or hydroxylation.
  • BACKGROUND ART
  • Rare earth metals are contained in the earth's crust as a mixed composite oxide. Rare-earth elements are so called because they are separated from relatively rare minerals, but they are not that rare in light of the overall earth's crust. In recent years, rare earth metals are attracting attention as an electronic material, and research and development for using rare earth metals are being promoted.
  • Among the rare earth metals, lanthanum (La) is attracting particular attention. To briefly introduce lanthanum, lanthanum is a white metal having an atomic number of 57 and an atomic weight of 138.9, and comprises a double hexagonal close-packed structure at normal temperature. Lanthanum has a melting point of 921° C., boiling point of 3500° C., and density of 6.15 g/cm3, its surface is oxidized in the atmosphere, and it gradually melts in water.
  • Lanthanum is soluble in hot water and acid. Although it is not ductile, it is slightly malleable. Lanthanum's resistivity is 5.70×10−6 Ωcm, and it becomes oxide (La2O3) when burned at 445° C. or higher (refer to Dictionary of Physics and Chemistry). With rare earth elements, it is generally said that compounds with the oxidation number 3 are stable, and lanthanum is also trivalent.
  • Lanthanum is a metal that is attracting attention as an electronic material such as a metal gate material or a high-dielectric constant (High-k) material. Rare earth elements other than lanthanum also have attributes similar to lanthanum.
  • A rare earth metal such as lanthanum is a material in which high purification is difficult to achieve since it is easily oxidized during the refining process. In addition, if a rare earth metal such as lanthanum is left in the atmosphere, there is a problem in that the handling thereof is difficult since it will become oxidized and tarnished in a short time.
  • In recent years, thinning of a gate insulator film is being demanded in the next-generation MOSFET, but with the SiO2 that has been conventionally used as the gate insulator film, the leak current increases due to the tunnel effect, and normal operation is becoming difficult.
  • Thus, as a substitute for the SiO2 described above, HfO2, ZrO2, Al2O3 and La2O3 with high dielectric constant, high thermal stability, and high energy barrier against the holes and electrons in the silicon have been proposed. in particular, among the foregoing materials, La2O3 is valued highly, and a research on its electrical properties and for its use as a gate insulator film in the next-generation MOSFET has been reported (refer to Non Patent Document 1). Nevertheless, with Non Patent Document 1, the subject of research is a La2O3 film, and it does not make any reference to the properties and behavior of La metal.
  • It could be said that rare earth metals such as lanthanum and their oxides are still in the research phase. When studying the properties of such rare earth metals and their oxides, if a rare earth metal or oxide thereof itself exists as a sputtering target material, it is possible to form a thin film of such rare earth metal or oxide thereof on a substrate. It will be easy to study the behavior at the interface with the silicon substrate, and the properties of a high-dielectric gate insulator film or the like after forming a rare earth metal compound. There is also a significant advantage in that the freedom of the target as a product will increase.
  • Nevertheless, even if a lanthanum sputtering target is prepared, as described above, it becomes oxidized in a short time in the atmosphere. Generally speaking, a stable oxide layer is formed on a metal target surface, but since it is extremely thin, it peels off during the initial stage of sputtering and does not affect the sputtering characteristics significantly. However, with a lanthanum sputtering target, the oxide layer becomes thick, and deterioration of the electrical conductivity will occur and thereby cause defective sputtering.
  • In addition, if the lanthanum sputtering target is left in the atmosphere for a long time, it reacts with the moisture in the air to become covered with white hydroxide powder and ultimately become pulverized, and it may even cause a problem of not allowing normal sputtering to be performed. Thus, after the target is prepared, it is necessary to take measures for preventing oxidation and hydroxylation such as by immediately vacuum-packing or coating the target with fats and oils.
  • As a method for storing rare earth metals, the standard method is to store the rare earth metals in mineral oil in order to prevent such rare earth metals from being exposed to the air. However, when using a rare earth metal for a sputtering target, it is necessary to clean the target before its use in order to remove the mineral oil. However, there is a problem in that the cleaning of the target itself is difficult due to its reactivity with oxygen, moisture and carbon dioxide.
  • Accordingly, under normal circumstances, it is necessary to store and package the target based on vacuum packing. However, even in a state where the target is vacuum packed, since pulverization caused by oxidation or hydroxylation will progress even with a small amount of moisture that penetrates the used film, it was difficult to store the sputtering target in enabled condition for a long time.
  • When reviewing the conventional background art, there are the following methods; namely, a method of covering the hollow-cathode-type sputtering target with a resin bag (refer to Patent Document 1), a method of coating the target with a plastic protective film (refer to Patent Document 2), a method of packaging the target using a film having a surface that does not release particles (refer to Patent Document 3), a method of preparing a target storage container with a transparent lid of acrylic resin and screwing shut the storage container (refer to Patent Document 4), and a method of encapsulating the sputtering target in a bag (refer to Patent Document 5). Nevertheless, since the foregoing Documents disclose that the target is encapsulated with a resin lid or a resin film, they are insufficient as a method for storing a target comprising a rare earth metal or oxide thereof.
  • [Non Patent Document 1] Written by Eisuke Tokumitsu and two others, “Research on Oxide Material for High-k Gate Insulator Film” The Institute of Electrical Engineers of Japan, Research Paper of Electronic Materials, Vol. 6-13, Pages 37 to 41, Published on Sep. 21, 2001
  • [Patent Document 1] International Publication No. W02005/037649
  • [Patent Document 2] Japanese Laid-Open Patent Publication No. 2002-212718 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2001-240959
  • [Patent Document 4] Japanese Laid-Open Patent Publication No. H8-246135
    [Patent Document 5] Japanese Laid-Open Patent Publication No. H4-231461
  • DISCLOSURE OF THE INVENTION Problems which the Invention Intends to Solve
  • An object of this invention is to provide technology for allowing the long-term storage of a sputtering target in enabled condition by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to residual air or ingress of air.
  • Means for Solving the Problems
  • The present invention provides:
      • 1) A method for storing a sputtering target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the target comprising the rare earth metal or oxide thereof to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the sputtering target is stored by sealing the container or the film-type seal; and
      • 2) A method for storing a target comprising a rare earth metal or oxide thereof, wherein rare earth metal oxide having greater hygroscopic property than the material of the target comprising the rare earth metal or oxide thereof to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the container or the film-type seal.
  • The present invention additionally provides:
      • 3) The method for storing a target comprising a rare earth metal or oxide thereof according to 2) above, wherein, if the target comprises two or more types of rare earth metals or their oxides, an oxide of the rare earth metal with the greatest hygroscopic property is used as a desiccant;
      • 4) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 3) above, wherein the encapsulating and storing method for the target is based on vacuum sealing; and
      • 5) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 4), wherein the encapsulating and storing means for the target is a vacuum sealing with a flexible film.
  • The present invention further provides:
      • 6) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 5) above, wherein the encapsulating and storing method for the target is performed by filling inert gas having a dew point of −80° C. or less to encapsulate the target;
      • 7) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 6) above, wherein the rare earth metal oxide to be used as a desiccant is mounted on or filled in a space created when the target is encapsulated;
      • 8) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 7) above, wherein the rare earth metal configuring the target is La or contains La;
      • 9) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 8) above, wherein the rare earth metal oxide to be used as a desiccant is La oxide; and
      • 10) The method for storing a target comprising a rare earth metal or oxide thereof according to any one of 1) to 9) above, wherein the amount of moisture penetration through the flexible film to be used in encapsulating and storing the target or the amount of moisture ingress into the container from the outside is 0.1 g/m2·24 h or less.
    EFFECT OF THE INVENTION
  • When encapsulating and storing a conventional target comprising a rare earth metal or oxide thereof in a hermetic container or with a plastic film, if it goes unattended for a long time, it will react with oxygen and moisture and become covered with white hydroxide powder, and there is a problem in that normal sputtering cannot be performed. Nevertheless, the target that is stored in a storage container or a film-type seal according to the present invention yields a significant effect of being able to avoid the foregoing problems.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 A diagram showing an example where the surface and side face of the La target are thinly coated with La oxide powder and vacuum packing is performed thereto.
  • FIG. 2 A diagram showing an example where La oxide powder is placed in a space due to the unevenness (difference in level) between the La target and BP (backing plate) and vacuum packing is performed thereto.
  • FIG. 3 A diagram showing an example where a La target is placed in a metallic container, La oxide powder is filled around the periphery of the La target, ambient air is once replaced with argon having a dew point of −80° C. or less, and vacuum sealing is subsequently performed thereto.
  • FIG. 4 A diagram showing an example where a metal alloy target comprising La and Er is placed in a metallic container, a sintered La oxide block is placed at the uneven part between the target and BP, air in the container is replaced with argon gas, and vacuuming is subsequently performed thereto.
  • FIG. 5 A diagram showing an example where the La target is subject to vacuum sealing with a film.
  • FIG. 6 A diagram showing an example where the La target is subject to vacuum sealing with a film, and silica gel is placed as a desiccant.
  • FIG. 7 A diagram showing an example where the La2O3 target is subject to vacuum sealing with a film.
  • BEST MODE FOR CARRYING OUT THE INVENTION
  • Rare earths, in particular lanthanum and lanthanum oxide, are known to have extremely strong hygroscopic properties (reactivity with moisture). Thus, the challenge to date was how to prevent lanthanum and lanthanum oxide from absorbing moisture as much as possible, and how to store lanthanum and lanthanum oxide in an environment with minimal moisture.
  • Nevertheless, as a result of taking advantage of the fact that lanthanum oxide has a higher hygroscopic property than lanthanum, the oxidation or hydroxylation of the lanthanum target body can be prevented by coating, mounting or placing lanthanum oxide (powder or sintered compact of a plate or block) on the target surface upon storing the lanthanum target.
  • Moreover, when storing a lanthanum oxide target, moisture can be absorbed and eliminated more effectively by enclosing the powdered or granular lanthanum oxide of larger surface area and, therefore, degradation of the target caused by hydroxylation can be prevented.
  • Specifically, the method for storing a target comprising a rare earth metal or oxide thereof according to the present invention is to introduce, as a desiccant, oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored into a storage container or a film-type seal.
  • Here, even if lanthanum oxide reacts with moisture to be hydroxylated and pulverized and it adheres to the target surface, since it is a compound of the identical metal in a powdered form, the foregoing powder will not cause any contamination since it can be eliminated easily. This is a significant advantage in comparison to the case of using a desiccant made of other metals.
  • Moreover, in cases where the contamination by other rare earth metals will not cause a problem: it is possible to introduce oxide of rare earth metal having a greater hygroscopic property than the material of the rare earth metal or its oxide target to be stored, as a desiccant, into a storage container or a film-type seal for the target, and store the target by sealing the storage container or the film-type seal.
  • If the target is made of two or more types of rare earth metals or their oxides, an oxide of the rare earth metal with the greatest hygroscopic property can be used as a desiccant.
  • As an encapsulating and storing method for target, it is preferable to prevent the ingress of outside air as much as possible. Vacuum sealing can be performed as one such method. Moreover, when vacuum sealing and storing the target, it is preferable to once replace the inside of the container or the film-type seal with inert gas having a dew point of −80° C. or less and thereafter perform vacuum sealing. As means for encapsulating and storing the target, flexible film may be used in the form of a hermetic bag and subject to vacuum sealing.
  • Although the case of performing vacuum sealing was explained above, inert gas having a dew point of −80° C. or less may be filled and sealed as the method for storing a target. All of the foregoing methods prevent the ingress of outside air.
  • As described above, contact with outside air is blocked and the ingress of moisture in the outside air is inhibited as much as possible. Nevertheless, even if there is slight ingress of outside air, hydroxylation of the target body can be inhibited by mounting or filling the foregoing rare earth oxide to be used as the desiccant in the space created when the target is encapsulated.
  • A target is generally bonded to a backing plate. For instance, when using a flexible film in the form of a hermetic bag and performing vacuum sealing thereto, unevenness will inevitably arise between the target and the backing plate, and a space is likely to be formed. Outside air is easily accumulated in such space. Pulverization of the target tends to advance from such space. Thus, it is desirable to fill the rare earth oxide as the desiccant at such uneven part or in such space.
  • In this respect, it should be easy to understand that the rare earth oxide to be used as the desiccant is preferably in the form of powder or granule of large surface area. Nevertheless, it is effective to simply place a small piece of rare earth oxide at a location where outside air is easily accumulated.
  • Moreover, although it is most effective to place the rare earth oxide and the target to be in direct contact, adhesion of powder to the target surface may cause the generation of particles during sputtering. In the foregoing case, a sufficient effect can be yielded even by enclosing the rare earth oxide packed with a permeable film as with a general desiccant.
  • The method for storing a target according to the present invention is particularly effective for a lanthanum target or a target containing lanthanum as the rare earth metal configuring the target. Moreover, the foregoing rare earth oxide to be used as the desiccant is lanthanum oxide. This is ironic, but lanthanum oxide that is most easily hydroxylated has the greatest inhibitory effect on hydroxylation of a target comprising a rare earth metal or oxide thereof in the method for storing a target comprising a rare earth metal or oxide thereof.
  • It is also important, as the method for storing a target comprising a rare earth metal or oxide thereof, to keep the amount of moisture penetration through the flexible film to be used in encapsulating and storing the target or the amount of moisture ingress into the storage container from the outside to be 0.1 g/m2·24 h or less and to prevent the ingress of moisture as much as possible.
  • Table 1 shows the favorable examples of the flexible film to be used in encapsulating and storing the target, as well as the non-favorable examples.
  • In Table 1, the examples having properties of GX Barrier (product name) or higher are effective. As shown in Table 1, GX Barrier (product name) and a bag containing Al foil are favorable. Table 1 shows representative examples, and it goes without saying that other flexible films may be used so as long as they satisfy the foregoing conditions.
  • TABLE 1
    Permeability
    Water vapor Oxygen
    (g/m2 · 24 h) (cm3/m2 · 24 h · atm)
    Eval 4 3
    NM Barrier 0.32 0.24
    GX Barrier <0.02 0.063
    Bag containing Al Foil <0.02 0.047
  • Examples of implementing the present invention are now explained.
  • Incidentally, these Examples are merely illustrative, and the present invention shall in no way be limited thereby. In other words, various modifications and other embodiments based on the technical spirit claimed in the claims shall be covered by the present invention as a matter of course.
  • Example 1
  • This is an example where the surface and side face of a La target are thinly coated with La oxide powder and vacuum packing is performed thereto. A specific example is shown in FIG. 1.
  • As shown in FIG. 1, as a result of a lanthanum oxide layer existing between the vacuum-packing film and the La target, the lanthanum oxide powder absorbs the moisture remaining inside the vacuum package and the moisture that penetrates the film and is fixed as lanthanum hydroxide. Thus, this is effective in preventing the phenomenon where the La target surface reacts with moisture to become hydroxide and be pulverized.
  • Example 2
  • This is an example where La oxide powder (as with a silica gel bag) is placed in a space due to the unevenness with BP and vacuum packing is performed thereto. A specific example is shown in FIG. 2.
  • As shown in FIG. 2, since La oxide absorbs the moisture in the slight space remaining in the vacuum package and is fixed as lanthanum hydroxide. Thus, this is effective in preventing the phenomenon where the La target reacts with moisture to become of hydroxide and be pulverized.
  • Example 3
  • This is an example where a La oxide target is placed in a metallic container, La oxide powder is filled around the periphery of the La target, ambient air is once replaced with argon having a dew point or −80° C. or less, and vacuum sealing is subsequently performed thereto. A specific example is shown in FIG. 3.
  • As shown in FIG. 3, lanthanum oxide absorbs the moisture remaining after the vacuuming and is fixed as lanthanum hydroxide. Thus, this is effective in preventing the phenomenon where La reacts with moisture to become hydroxide and be pulverized.
  • Example 4
  • This is an example where a metal alloy target comprising La and Er is placed in a metallic container, a sintered La oxide block is placed at the uneven part between the target and BP, air in the container is replaced with argon gas having a dew point of −80° C. or less, and vacuuming is subsequently performed thereto.
  • As shown in FIG. 4, lanthanum oxide absorbs the moisture remaining after the vacuuming and is fixed as lanthanum hydroxide. Thus, this is effective in preventing the phenomenon where La reacts with moisture to become hydroxide and be pulverized.
  • Comparative Example 1
  • This is an example where the La target was subject to vacuum sealing with a film. A specific example is shown in FIG. 5. As shown in FIG. 5, the small amount of moisture remaining in the space created between the vacuum-packing film and the target reacted with the La target, and La became lanthanum hydroxide. It resulted in pulverization.
  • Comparative Example 2
  • This is an example where the La target was subject to vacuum sealing with a film, and silica gel was placed as a desiccant. A specific example is shown in FIG. 6.
  • When silica gel is placed as shown in FIG. 6, pulverization progressed faster than the case of not placing silica gel. The reason for this is considered to be that the moisture adsorbed by the silica gel became desorbed and discharged inside the vacuum-packing film, and the reaction of moisture and La was promoted and resulted in lanthanum hydroxide. In light of the above, it is evident that silica gel that is used as a general desiccant is useless, or even undesirable, in preventing the pulverization phenomenon of the rare earth metal or rare earth metal oxide.
  • Comparative Example 3
  • This is an example where the La2O3 target was subject to vacuum sealing with a film. A specific example is shown in FIG. 7. As shown in FIG. 7, since La oxide (La2O3) absorbs the moisture in the slight space remaining in the vacuum package and is fixed as lanthanum hydroxide, the La2O3 target reacts with moisture, and La2O3 becomes hydroxide. It results in pulverization.
  • As evident from the foregoing Examples and Comparative
  • Examples, upon storing a target comprising a rare earth metal or oxide thereof, it is evident that the introduction of oxide of the same rare earth metal as the material of the target comprising the rare earth metal or oxide thereof to be stored as a desiccant into a hermetic container or seal is extremely effective. It is thereby possible to effectively inhibit the pulverization of the target caused by the oxidation and hydroxylation of such target due to residual air or ingress of air.
  • INDUSTRIAL APPLICABILITY
  • Conventionally, if a rare earth metal or a rare earth metal oxide sputtering target is left in the atmosphere for a long time, it reacts with the moisture in the air and becomes covered with white hydroxide powder, and there is a problem in that normal sputtering cannot be performed. Nevertheless, the method for storing a target comprising a rare earth metal or oxide thereof according to the present invention enables to avoid the foregoing problems.
  • The method for storing a target comprising a rare earth metal or oxide thereof according to the present invention is to introduce, as a desiccant, oxide of the same rare earth metal as the material of the target comprising the rare earth metal or oxide thereof to be stored into a storage container or a film-type seal. It is thereby possible to effectively inhibit the condition where the target reacts with the moisture in the atmosphere and becomes covered with white hydroxide powder.
  • Accordingly, targets can be stably supplied as an electronic material such as a metal gate material or a high-dielectric constant (High-k) material, and the present invention is extremely useful industrially.

Claims (20)

1. A method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the target comprising the rare earth metal or oxide thereof to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the container or the film-type seal.
2. A method for storing a target comprising a rare earth metal or oxide thereof, wherein rare earth metal oxide having greater hygroscopic property than the material of the target comprising the rare earth metal or oxide thereof to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the container or the film-type seal.
3. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 2, wherein the target comprises two or more types of rare earth metals or their oxides, and wherein an oxide of the rare earth metal with the greatest hygroscopic property is used as the desiccant.
4. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 3, wherein the step of sealing is vacuum sealing.
5. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 3, wherein the step of sealing is vacuum sealing with a flexible film.
6. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 3, further comprising the step of filling inert gas having a dew point of −80° C. or less into the container or film-type seal and encapsulating the target.
7. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 6, wherein the rare earth metal oxide to be used as the desiccant is mounted on or filled in a space created when the target is encapsulated.
8. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 2, wherein the rare earth metal configuring the target is La or contains La.
9. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 8, wherein the rare earth metal oxide to be used as the desiccant is La oxide.
10. The method for storing a target comprising a rare earth metal or oxide thereof according to claim 9, wherein the amount of moisture penetration through the flexible film to be used in encapsulating and storing the target or the amount of moisture ingress into the container from the outside is 0.1 g/m2·24 h or less.
11. The method according to claim 2, further comprising the step of filling inert gas having a dew point of −80° C. or less into the container or film-type seal and encapsulating the target.
12. The method according to claim 2, wherein the oxide to be used as the desiccant is mounted on or filled in a space created when the target is encapsulated by the container or film-type seal.
13. The method according to claim 2, wherein an amount of moisture penetration through the flexible film to be used in encapsulating and storing the target or the amount of moisture ingress into the container from the outside is 0.1 g/m2·24 h or less.
14. The method according to claim 1, wherein the step of sealing is vacuum sealing.
15. The method according to claim 1, wherein the step of sealing is vacuum sealing with a flexible film.
16. The method according to claim 1, further comprising the step of filling inert gas having a dew point of −80° C. or less into the container or film-type seal and encapsulating the target.
17. The method according to claim 1, wherein the oxide to be used as the desiccant is mounted on or filled in a space created when the target is encapsulated by the container or film-type seal.
18. The method according to claim 1, wherein the rare earth metal configuring the target is La or contains La.
19. The method according to claim 19, wherein the oxide to be used as the desiccant is La oxide.
20. The method according to claim 1, wherein an amount of moisture penetration through the flexible film to be used in encapsulating and storing the target or the amount of moisture ingress into the container from the outside is 0.1 g/m2·24 h or less.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100272596A1 (en) * 2007-12-28 2010-10-28 Nippon Mining And Metals Co., Ltd. High-Purity Lanthanum, Sputtering Target Comprising High-Purity Lanthanum, and Metal Gate Film Mainly Comprising High-Purity Lanthanum
US20110114481A1 (en) * 2008-07-07 2011-05-19 Jx Nippon Mining & Metals Corporation Lanthanum Oxide-based Sintered Compact, Sputtering Target Composed of said Sintered Compact, Method of Producing Lanthanum Oxide-based Sintered Compact, and Method of Producing Sputtering Target based on said Production Method
US20110114482A1 (en) * 2008-07-07 2011-05-19 Jx Nippon Mining & Metals Corporation Oxide Sintered Compact, Sputtering Target Composed of the Sintered Compact, and Method of Producing the Sintered Compact and the Sintered Compact Sputtering Target
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US8753491B2 (en) 2009-11-13 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method for packaging target material and method for mounting target
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US9013009B2 (en) 2011-01-21 2015-04-21 Jx Nippon Mining & Metals Corporation Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component
US9347130B2 (en) 2009-03-27 2016-05-24 Jx Nippon Mining & Metals Corporation Lanthanum target for sputtering
US9382612B2 (en) 2009-03-31 2016-07-05 Jx Nippon Mining & Metals Corporation Lanthanum target for sputtering

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Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318001A (en) * 1979-07-06 1982-03-02 Siemens Aktiengesellschaft Luminescent materials with increased humidity stability
US4427992A (en) * 1975-12-17 1984-01-24 Motorola, Inc. Method for incorporating a desiccant in a semiconductor package
US5866263A (en) * 1996-04-26 1999-02-02 Semi-Alloys Company Adsorbent lid construction
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
JP2000073054A (en) * 1998-08-31 2000-03-07 Toyota Motor Corp Antioxidant and method for using the same
US20020022569A1 (en) * 2000-08-10 2002-02-21 Yasushi Takai Rare earth hydroxide and method for the preparation thereof
US6390179B1 (en) * 2000-11-08 2002-05-21 Pcc Structurals, Inc. Method for processing materials to increase slurry lifetime
WO2008001745A1 (en) * 2006-06-29 2008-01-03 Mitsui Mining & Smelting Co., Ltd. Dehumidifying/deoxidizing agent
US20080136316A1 (en) * 2006-12-06 2008-06-12 Sa-Bang Um Organic light emitting display
US20090074965A1 (en) * 2006-03-10 2009-03-19 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US7788882B2 (en) * 2003-10-15 2010-09-07 Nippon Mining & Metals Co., Ltd. Packaging device and packaging method for hollow cathode type sputtering target
US7799302B1 (en) * 2004-02-27 2010-09-21 Kovio, Inc. Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
US7871505B2 (en) * 2002-03-19 2011-01-18 Jx Nippon Mining & Metals Corporation Sputtering target transport box
US20110117179A1 (en) * 2005-06-03 2011-05-19 Prezacor, Inc. Compositions comprising elemental metals and uses therefor
US20110171764A1 (en) * 2008-02-15 2011-07-14 Nederlandse Organisatie Voor Toegepastnatuurwetenschappelijk Onderzoek Tno Encapsulated electronic device and method of manufacturing
CN102312115A (en) * 2011-09-23 2012-01-11 太原理工大学 Preparation method for lanthana alterant
US20120045380A1 (en) * 2009-11-17 2012-02-23 Jx Nippon Mining & Metals Corporation Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target
US20130277214A1 (en) * 2011-03-01 2013-10-24 Jx Nippon Mining & Metals Corporation Method of Storing Metal Lanthanum Target, Vacuum-sealed Metal Lanthanum Target, and Thin Film Formed by Sputtering the Metal Lanthanum Target

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159372A (en) * 1988-12-12 1990-06-19 Nec Corp Protective vessel for sputtering target
JPH04231461A (en) * 1990-12-27 1992-08-20 Tosoh Corp Protector for sputtering target and packaging method
JPH08246145A (en) * 1995-03-13 1996-09-24 Vacuum Metallurgical Co Ltd Preserving vessel and preserving method for dielectric target
JP2001240959A (en) * 1999-12-22 2001-09-04 Mitsui Mining & Smelting Co Ltd Packed high purity target
TW546396B (en) * 1999-12-22 2003-08-11 Mitsui Mining & Smelting Co Packed high purity target
JP2002212718A (en) * 2001-01-17 2002-07-31 Sumitomo Metal Mining Co Ltd Target with protective film and surface treatment method

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427992A (en) * 1975-12-17 1984-01-24 Motorola, Inc. Method for incorporating a desiccant in a semiconductor package
US4318001A (en) * 1979-07-06 1982-03-02 Siemens Aktiengesellschaft Luminescent materials with increased humidity stability
US5866263A (en) * 1996-04-26 1999-02-02 Semi-Alloys Company Adsorbent lid construction
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
JP2000073054A (en) * 1998-08-31 2000-03-07 Toyota Motor Corp Antioxidant and method for using the same
US20020022569A1 (en) * 2000-08-10 2002-02-21 Yasushi Takai Rare earth hydroxide and method for the preparation thereof
US6390179B1 (en) * 2000-11-08 2002-05-21 Pcc Structurals, Inc. Method for processing materials to increase slurry lifetime
US6920913B2 (en) * 2000-11-08 2005-07-26 Pcc Structurals, Inc. Method for processing casting materials to increase slurry lifetime
US7871505B2 (en) * 2002-03-19 2011-01-18 Jx Nippon Mining & Metals Corporation Sputtering target transport box
US7788882B2 (en) * 2003-10-15 2010-09-07 Nippon Mining & Metals Co., Ltd. Packaging device and packaging method for hollow cathode type sputtering target
US7799302B1 (en) * 2004-02-27 2010-09-21 Kovio, Inc. Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
US20110117179A1 (en) * 2005-06-03 2011-05-19 Prezacor, Inc. Compositions comprising elemental metals and uses therefor
US20090074965A1 (en) * 2006-03-10 2009-03-19 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US20090246556A1 (en) * 2006-06-29 2009-10-01 Mitsui Mining & Smelting Co., Ltd. Dehumidifying deoxidizer
WO2008001745A1 (en) * 2006-06-29 2008-01-03 Mitsui Mining & Smelting Co., Ltd. Dehumidifying/deoxidizing agent
US8328915B2 (en) * 2006-06-29 2012-12-11 Mitsui Mining & Smelting Co., Ltd. Dehumidifying deoxidizer
US20080136316A1 (en) * 2006-12-06 2008-06-12 Sa-Bang Um Organic light emitting display
US20110171764A1 (en) * 2008-02-15 2011-07-14 Nederlandse Organisatie Voor Toegepastnatuurwetenschappelijk Onderzoek Tno Encapsulated electronic device and method of manufacturing
US20120045380A1 (en) * 2009-11-17 2012-02-23 Jx Nippon Mining & Metals Corporation Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target
US20130277214A1 (en) * 2011-03-01 2013-10-24 Jx Nippon Mining & Metals Corporation Method of Storing Metal Lanthanum Target, Vacuum-sealed Metal Lanthanum Target, and Thin Film Formed by Sputtering the Metal Lanthanum Target
CN102312115A (en) * 2011-09-23 2012-01-11 太原理工大学 Preparation method for lanthana alterant

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100272596A1 (en) * 2007-12-28 2010-10-28 Nippon Mining And Metals Co., Ltd. High-Purity Lanthanum, Sputtering Target Comprising High-Purity Lanthanum, and Metal Gate Film Mainly Comprising High-Purity Lanthanum
US8980169B2 (en) 2007-12-28 2015-03-17 Jx Nippon Mining & Metals Corporation High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanum
US20110114481A1 (en) * 2008-07-07 2011-05-19 Jx Nippon Mining & Metals Corporation Lanthanum Oxide-based Sintered Compact, Sputtering Target Composed of said Sintered Compact, Method of Producing Lanthanum Oxide-based Sintered Compact, and Method of Producing Sputtering Target based on said Production Method
US20110114482A1 (en) * 2008-07-07 2011-05-19 Jx Nippon Mining & Metals Corporation Oxide Sintered Compact, Sputtering Target Composed of the Sintered Compact, and Method of Producing the Sintered Compact and the Sintered Compact Sputtering Target
US9347130B2 (en) 2009-03-27 2016-05-24 Jx Nippon Mining & Metals Corporation Lanthanum target for sputtering
US9382612B2 (en) 2009-03-31 2016-07-05 Jx Nippon Mining & Metals Corporation Lanthanum target for sputtering
US8753491B2 (en) 2009-11-13 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method for packaging target material and method for mounting target
EP2503020A4 (en) * 2009-11-17 2013-07-24 Jx Nippon Mining & Metals Corp Method for storing lanthanum oxide target, and vacuum-packed lanthanum oxide target
US8911600B2 (en) 2009-11-17 2014-12-16 Jx Nippon Mining & Metals Corporation Method of storing lanthanum oxide target, and vacuum-sealed lanthanum oxide target
US9013009B2 (en) 2011-01-21 2015-04-21 Jx Nippon Mining & Metals Corporation Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component
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JP2014167167A (en) * 2011-03-01 2014-09-11 Jx Nippon Mining & Metals Corp Storage method of metal lanthanum target, vacuum-sealed metal lanthanum target, and thin film formed by sputtering using metal lanthanum target

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