JP2009522822A - 高品質化合物半導体材料を製造するためのナノ構造適応層及びhvpeを使用する成長法、単結晶化合物半導体材料、並びに、基板材料 - Google Patents
高品質化合物半導体材料を製造するためのナノ構造適応層及びhvpeを使用する成長法、単結晶化合物半導体材料、並びに、基板材料 Download PDFInfo
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Abstract
Description
1.Handbook of Crystal Growth,第3巻,D.T.J.Hurle編,Elsevier Science 1994
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(a)エピタキシャル成長開始表面を提供するために、化合物半導体ナノ構造を有する基板材料を用意し、
(b)エピタキシャル横方向成長によって化合物半導体材料を前記ナノ構造上に成長させ、
(c)前記基板から成長させた前記化合物半導体材料を分離することを含む方法が提供される。
Claims (33)
- 単結晶化合物半導体材料を製造するための方法であって、
(a)エピタキシャル成長開始表面を提供するために、化合物半導体ナノカラムを有する基板材料を用意し、
(b)エピタキシャル横方向成長によって化合物半導体材料を前記ナノカラム上に成長させ、
(c)前記基板から成長させた前記化合物半導体材料を分離することを含む方法。 - 請求項1において、
前記化合物半導体材料は、III−V化合物及びII−VI化合物からなる群から選択される方法。 - 請求項1又は2において、
前記基板材料は、サファイア、シリコン、炭化ケイ素、ダイヤモンド、金属、金属酸化物、化合物半導体、ガラス、石英、複合材料からなる群から選択される方法。 - 請求項1又は2において、
前記基板材料は、導電性基板、絶縁性基板、半導電性基板からなる群から選択される方法。 - 請求項3又は4において、
前記基板は、請求項1に記載の方法によって製造された化合物半導体材料を含む方法。 - 請求項1ないし5のいずれか1項において、
前記工程(a)は、前記化合物半導体ナノカラムを前記基板上に成長させる工程を含む方法。 - 請求項6において、
前記ナノカラムを成長させる前に少なくとも1つのナノアイランドを前記基板材料上に形成する工程を含む方法。 - 請求項8において、
前記基板を窒化、スパッタリング、金属蒸着、アニーリング、CVD、MOCVDの少なくとも1つで処理することによって前記ナノアイランドを形成する工程を含む方法。 - 請求項6ないし8のいずれか1項において、
前記ナノカラムをHVPE法によって成長させる方法。 - 請求項6ないし8のいずれか1項において、
前記ナノカラムをCVD法によって成長させる方法。 - 請求項6ないし8のいずれか1項において、
前記ナノカラムをMOCVD法によって成長させる方法。 - 請求項6ないし8のいずれか1項において、
前記ナノカラムをMBE法によって成長させる方法。 - 請求項1ないし12のいずれか1項において、
前記ナノカラムは、ドーピングされていないか、n型又はp型ドーパントでドーピングされている方法。 - 請求項1ないし13のいずれか1項において、
前記ナノカラムを、単一のドープ材料又は非ドープ材料、又は非ドープおよびドープ工程の組合せ、又はnドープおよびpドープ工程の組合せにより成長させる方法。 - 請求項13又は14において、
前記ナノカラムは、前記成長表面に近接したp型領域を含む方法。 - 請求項1ないし15のいずれか1項において、
前記ナノカラムは、GaN、AlN、InN、ZnO、SiC、Si及びそれらの合金からなる群から選択される材料を含む方法。 - 請求項1ないし16のいずれか1項において、
前記化合物半導体材料は、前記ナノカラムとは異なる材料を含む方法。 - 請求項1ないし17のいずれか1項において、
前記化合物半導体材料のエピタキシャル横方向成長をHVPE方法によって行う方法。 - 請求項1ないし18のいずれか1項において、
前記化合物半導体材料のエピタキシャル横方向成長は、非ドープ、もしくはn型またはp型ドープ、である方法。 - 請求項1ないし19のいずれか1項において、
前記化合物半導体材料のエピタキシャル横方向成長は、時間変調されている方法。 - 請求項1ないし20のいずれか1項において、
前記基板の回転及び降下の少なくとも1つを行いながら前記工程(b)を行う方法。 - 請求項1ないし21のいずれか1項において、
成長させた前記化合物半導体材料を急速に冷却することによって前記基板から分離する方法。 - 請求項1ないし21のいずれか1項において、
成長させた前記化合物半導体材料を機械的に前記基板から分離する方法。 - 請求項1ないし21のいずれか1項において、
成長させた前記化合物半導体材料をウェットエッチングによって前記基板から分離する方法。 - 請求項1ないし21のいずれか1項において、
成長させた前記化合物半導体材料を電気化学エッチングによって前記基板から分離する方法。 - 請求項1ないし21のいずれか1項において、
成長させた前記化合物半導体材料をレーザーアブレーションによって前記基板から分離する方法。 - 請求項1ないし26のいずれか1項において、
成長させた前記化合物半導体材料を切断して所定の膜厚の半導体層を得る方法。 - 請求項1ないし27のいずれか1項において、
成長させた前記化合物半導体材料は、非極性である方法。 - 請求項35において、
成長させた前記化合物半導体材料は、a面GaN又はm面GaNを含む方法。 - 請求項28又は29において、
前記基板は、γ面サファイア、又はm面4H−SiC、又はm面6H−SiCを含む方法。 - 請求項1ないし30のいずれか1項に記載の方法を使用して成長させた単結晶化合物半導体材料。
- エピタキシャル成長開始表面を提供するために、成長させた化合物半導体ナノカラムを有する基板材料。
- 請求項32において、前記成長表面に近接したp型領域を含む基板。
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Also Published As
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WO2007107757B1 (en) | 2008-02-07 |
EP1997125B1 (en) | 2017-11-15 |
WO2007107757A3 (en) | 2007-11-15 |
EP1997125A2 (en) | 2008-12-03 |
TWI500827B (zh) | 2015-09-21 |
TW200801257A (en) | 2008-01-01 |
CN101410950A (zh) | 2009-04-15 |
KR20080114805A (ko) | 2008-12-31 |
JP4537484B2 (ja) | 2010-09-01 |
GB0605838D0 (en) | 2006-05-03 |
WO2007107757A2 (en) | 2007-09-27 |
KR101390034B1 (ko) | 2014-04-29 |
GB2436398A (en) | 2007-09-26 |
US20090243043A1 (en) | 2009-10-01 |
GB2436398B (en) | 2011-08-24 |
CN101410950B (zh) | 2012-06-06 |
JP2010030896A (ja) | 2010-02-12 |
ES2657666T3 (es) | 2018-03-06 |
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