JP2009513030A - 界面層を有する樹脂パッケージ半導体装置 - Google Patents

界面層を有する樹脂パッケージ半導体装置 Download PDF

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Publication number
JP2009513030A
JP2009513030A JP2008537793A JP2008537793A JP2009513030A JP 2009513030 A JP2009513030 A JP 2009513030A JP 2008537793 A JP2008537793 A JP 2008537793A JP 2008537793 A JP2008537793 A JP 2008537793A JP 2009513030 A JP2009513030 A JP 2009513030A
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chip
buffer layer
dielectric constant
loss tangent
semiconductor device
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Pending
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JP2008537793A
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Japanese (ja)
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JP2009513030A5 (enExample
Inventor
ダブリュ． コンディー、ブライアン
ケイ． シャー、マヘーシュ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2009513030A publication Critical patent/JP2009513030A/ja
Publication of JP2009513030A5 publication Critical patent/JP2009513030A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3164—Partial encapsulation or coating the coating being a foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2008537793A 2005-10-24 2006-10-18 界面層を有する樹脂パッケージ半導体装置 Pending JP2009513030A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/257,822 US7432133B2 (en) 2005-10-24 2005-10-24 Plastic packaged device with die interface layer
PCT/US2006/040871 WO2007050422A2 (en) 2005-10-24 2006-10-18 Plastic packaged device with die interface layer

Publications (2)

Publication Number Publication Date
JP2009513030A true JP2009513030A (ja) 2009-03-26
JP2009513030A5 JP2009513030A5 (enExample) 2009-12-03

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JP2008537793A Pending JP2009513030A (ja) 2005-10-24 2006-10-18 界面層を有する樹脂パッケージ半導体装置

Country Status (5)

Country Link
US (1) US7432133B2 (enExample)
JP (1) JP2009513030A (enExample)
CN (1) CN101517718B (enExample)
TW (1) TWI470747B (enExample)
WO (1) WO2007050422A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2005304912A1 (en) 2004-11-04 2006-05-18 Smith & Nephew, Inc. Cycle and load measurement device
AU2006282828B2 (en) 2005-08-23 2013-01-31 Smith & Nephew, Inc Telemetric orthopaedic implant
JP4773307B2 (ja) * 2006-09-15 2011-09-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
WO2008103181A1 (en) 2007-02-23 2008-08-28 Smith & Nephew, Inc. Processing sensed accelerometer data for determination of bone healing
ES2611597T3 (es) * 2007-09-06 2017-05-09 Smith & Nephew, Inc. Sistema y método para comunicar con un implante telemétrico
JP5507470B2 (ja) * 2008-02-01 2014-05-28 スミス アンド ネフュー インコーポレーテッド インプラントと通信するシステム
US8704124B2 (en) 2009-01-29 2014-04-22 Smith & Nephew, Inc. Low temperature encapsulate welding
US8866708B2 (en) 2011-01-21 2014-10-21 Peter Sui Lun Fong Light emitting diode switch device and array
US9190393B1 (en) 2013-09-10 2015-11-17 Delta Electronics, Inc. Low parasitic capacitance semiconductor device package
US10224260B2 (en) * 2013-11-26 2019-03-05 Infineon Technologies Ag Semiconductor package with air gap
JP2015231027A (ja) * 2014-06-06 2015-12-21 住友電気工業株式会社 半導体装置
US10672703B2 (en) 2018-09-26 2020-06-02 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of fabrication
CN109273418A (zh) * 2018-11-08 2019-01-25 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 一种芯片封装结构及方法
US11248769B2 (en) 2019-04-10 2022-02-15 Peter Sui Lun Fong Optic for touch-sensitive light emitting diode switch
US11728305B2 (en) 2021-05-11 2023-08-15 Sandisk Technologies Llc Capacitor structure including bonding pads as electrodes and methods of forming the same
CN114678298B (zh) * 2022-03-14 2022-09-09 珠海市众知科技有限公司 一种集成电路块引脚封装装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794642A (ja) * 1993-07-27 1995-04-07 Toshiba Corp 半導体装置
JPH1065067A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
JP2906282B2 (ja) * 1990-09-20 1999-06-14 富士通株式会社 ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
JPH04314394A (ja) * 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
KR100280762B1 (ko) * 1992-11-03 2001-03-02 비센트 비.인그라시아 노출 후부를 갖는 열적 강화된 반도체 장치 및 그 제조방법
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
JP3516592B2 (ja) * 1998-08-18 2004-04-05 沖電気工業株式会社 半導体装置およびその製造方法
US6001673A (en) * 1999-02-11 1999-12-14 Ericsson Inc. Methods for packaging integrated circuit devices including cavities adjacent active regions
KR100298827B1 (ko) * 1999-07-09 2001-11-01 윤종용 재배선 기판을 사용한 웨이퍼 레벨 칩 스케일 패키지 제조방법
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
US6627669B2 (en) * 2000-06-06 2003-09-30 Honeywell International Inc. Low dielectric materials and methods of producing same
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
EP1215724B1 (en) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Wire bonded semiconductor device with low capacitance coupling
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794642A (ja) * 1993-07-27 1995-04-07 Toshiba Corp 半導体装置
JPH1065067A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN101517718A (zh) 2009-08-26
US7432133B2 (en) 2008-10-07
US20070090543A1 (en) 2007-04-26
CN101517718B (zh) 2011-01-26
TW200731476A (en) 2007-08-16
WO2007050422A3 (en) 2009-05-14
TWI470747B (zh) 2015-01-21
WO2007050422A2 (en) 2007-05-03

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