JP2009503901A5 - - Google Patents

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Publication number
JP2009503901A5
JP2009503901A5 JP2008525077A JP2008525077A JP2009503901A5 JP 2009503901 A5 JP2009503901 A5 JP 2009503901A5 JP 2008525077 A JP2008525077 A JP 2008525077A JP 2008525077 A JP2008525077 A JP 2008525077A JP 2009503901 A5 JP2009503901 A5 JP 2009503901A5
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JP
Japan
Prior art keywords
current
electrode
transistor
programmable
current electrode
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Application number
JP2008525077A
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English (en)
Japanese (ja)
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JP5124456B2 (ja
JP2009503901A (ja
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Priority claimed from US11/197,814 external-priority patent/US7206214B2/en
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Publication of JP2009503901A publication Critical patent/JP2009503901A/ja
Publication of JP2009503901A5 publication Critical patent/JP2009503901A5/ja
Application granted granted Critical
Publication of JP5124456B2 publication Critical patent/JP5124456B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008525077A 2005-08-05 2006-07-28 一回限りプログラム可能なメモリ及びそれを動作させる方法 Expired - Fee Related JP5124456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/197,814 US7206214B2 (en) 2005-08-05 2005-08-05 One time programmable memory and method of operation
US11/197,814 2005-08-05
PCT/US2006/029704 WO2007019109A2 (en) 2005-08-05 2006-07-28 One time programmable memory and method of operation

Publications (3)

Publication Number Publication Date
JP2009503901A JP2009503901A (ja) 2009-01-29
JP2009503901A5 true JP2009503901A5 (cg-RX-API-DMAC7.html) 2009-07-02
JP5124456B2 JP5124456B2 (ja) 2013-01-23

Family

ID=37717476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008525077A Expired - Fee Related JP5124456B2 (ja) 2005-08-05 2006-07-28 一回限りプログラム可能なメモリ及びそれを動作させる方法

Country Status (6)

Country Link
US (1) US7206214B2 (cg-RX-API-DMAC7.html)
JP (1) JP5124456B2 (cg-RX-API-DMAC7.html)
KR (1) KR101236582B1 (cg-RX-API-DMAC7.html)
CN (1) CN101361139B (cg-RX-API-DMAC7.html)
TW (1) TWI435332B (cg-RX-API-DMAC7.html)
WO (1) WO2007019109A2 (cg-RX-API-DMAC7.html)

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US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
KR20130032458A (ko) * 2011-09-23 2013-04-02 에스케이하이닉스 주식회사 Ｏｔｐ 메모리 셀을 포함하는 반도체 장치
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
KR20140011790A (ko) 2012-07-19 2014-01-29 삼성전자주식회사 멀티 레벨 안티퓨즈 메모리 장치 및 이의 동작 방법
US8767434B2 (en) * 2012-09-11 2014-07-01 SK Hynix Inc. E-fuse array circuit
US20140198583A1 (en) * 2013-01-17 2014-07-17 Infineon Technologies Ag Method and System for Reducing the Size of Nonvolatile Memories
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
US8942034B2 (en) * 2013-02-05 2015-01-27 Qualcomm Incorporated System and method of programming a memory cell
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
JP2015076556A (ja) * 2013-10-10 2015-04-20 ソニー株式会社 メモリ装置、書込方法、読出方法
TWI543302B (zh) * 2014-03-14 2016-07-21 林崇榮 一次編程記憶體及其相關記憶胞結構
KR102169197B1 (ko) * 2014-09-16 2020-10-22 에스케이하이닉스 주식회사 향상된 프로그램 효율을 갖는 안티퓨즈 오티피 메모리 셀 및 셀 어레이
CN105513642B (zh) * 2014-09-24 2019-11-05 珠海创飞芯科技有限公司 Otp存储器
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9799662B2 (en) * 2015-08-18 2017-10-24 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
TWI578325B (zh) * 2015-08-18 2017-04-11 力旺電子股份有限公司 反熔絲型一次編程的記憶胞及其相關的陣列結構
US10181357B2 (en) 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
US9634015B2 (en) * 2015-08-18 2017-04-25 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
CN105243342B (zh) * 2015-10-08 2019-02-19 浪潮(北京)电子信息产业有限公司 一种基于一次可编程查找表的标准单元逻辑电路
US10109364B2 (en) * 2015-10-21 2018-10-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Non-volatile memory cell having multiple signal pathways to provide access to an antifuse of the memory cell
KR102327140B1 (ko) * 2015-11-30 2021-11-16 삼성전자주식회사 Otp 메모리 소자와 그 제조방법 및 그 메모리 소자를 포함한 전자 장치
US10032522B2 (en) * 2016-06-10 2018-07-24 Synopsys, Inc. Three-transistor OTP memory cell
EP3288037B1 (en) * 2016-08-25 2023-11-08 eMemory Technology Inc. Memory array having a small chip area
US10103732B1 (en) 2017-10-04 2018-10-16 Synopsys, Inc. Low power voltage level shifter circuit
US10163520B1 (en) 2017-10-16 2018-12-25 Synopsys, Inc. OTP cell with improved programmability
CN108511024A (zh) * 2018-04-11 2018-09-07 珠海创飞芯科技有限公司 一种反熔丝编程方法、系统及反熔丝器件
US10847236B2 (en) * 2018-10-17 2020-11-24 Ememory Technology Inc. Memory cell with a sensing control circuit
KR102520496B1 (ko) 2019-01-03 2023-04-11 삼성전자주식회사 오티피 메모리 장치 및 오피 메모리 장치의 테스트 방법
CN113540045A (zh) * 2020-04-15 2021-10-22 合肥晶合集成电路股份有限公司 一种反熔丝电路
CN111881638B (zh) * 2020-07-31 2024-04-26 上海华力微电子有限公司 可编程电路及其编程方法、读取方法
US11763875B2 (en) * 2021-05-26 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Second word line combined with Y-MUX signal in high voltage memory program
CN113707207B (zh) * 2021-10-20 2022-02-15 成都凯路威电子有限公司 Otp存储器阵列和读写方法
TWI867695B (zh) * 2022-08-24 2024-12-21 振生半導體股份有限公司 多狀態的一次性可程式化記憶體電路

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