JP5124456B2 - 一回限りプログラム可能なメモリ及びそれを動作させる方法 - Google Patents

一回限りプログラム可能なメモリ及びそれを動作させる方法 Download PDF

Info

Publication number
JP5124456B2
JP5124456B2 JP2008525077A JP2008525077A JP5124456B2 JP 5124456 B2 JP5124456 B2 JP 5124456B2 JP 2008525077 A JP2008525077 A JP 2008525077A JP 2008525077 A JP2008525077 A JP 2008525077A JP 5124456 B2 JP5124456 B2 JP 5124456B2
Authority
JP
Japan
Prior art keywords
current
transistor
electrode
programmable
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008525077A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009503901A (ja
JP2009503901A5 (cg-RX-API-DMAC7.html
Inventor
ヘフラー，アレクサンダー，ベー
チンダロレ，ゴウリシャンカル，エル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009503901A publication Critical patent/JP2009503901A/ja
Publication of JP2009503901A5 publication Critical patent/JP2009503901A5/ja
Application granted granted Critical
Publication of JP5124456B2 publication Critical patent/JP5124456B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2008525077A 2005-08-05 2006-07-28 一回限りプログラム可能なメモリ及びそれを動作させる方法 Expired - Fee Related JP5124456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/197,814 US7206214B2 (en) 2005-08-05 2005-08-05 One time programmable memory and method of operation
US11/197,814 2005-08-05
PCT/US2006/029704 WO2007019109A2 (en) 2005-08-05 2006-07-28 One time programmable memory and method of operation

Publications (3)

Publication Number Publication Date
JP2009503901A JP2009503901A (ja) 2009-01-29
JP2009503901A5 JP2009503901A5 (cg-RX-API-DMAC7.html) 2009-07-02
JP5124456B2 true JP5124456B2 (ja) 2013-01-23

Family

ID=37717476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008525077A Expired - Fee Related JP5124456B2 (ja) 2005-08-05 2006-07-28 一回限りプログラム可能なメモリ及びそれを動作させる方法

Country Status (6)

Country Link
US (1) US7206214B2 (cg-RX-API-DMAC7.html)
JP (1) JP5124456B2 (cg-RX-API-DMAC7.html)
KR (1) KR101236582B1 (cg-RX-API-DMAC7.html)
CN (1) CN101361139B (cg-RX-API-DMAC7.html)
TW (1) TWI435332B (cg-RX-API-DMAC7.html)
WO (1) WO2007019109A2 (cg-RX-API-DMAC7.html)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411815B2 (en) * 2005-11-14 2008-08-12 Infineon Technologies Ag Memory write circuit
US7924596B2 (en) * 2007-09-26 2011-04-12 Intel Corporation Area efficient programmable read only memory (PROM) array
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US7974127B2 (en) 2007-11-06 2011-07-05 Macronix International Co., Ltd. Operation methods for memory cell and array for reducing punch through leakage
US7916551B2 (en) 2007-11-06 2011-03-29 Macronix International Co., Ltd. Method of programming cell in memory and memory apparatus utilizing the method
JP5238458B2 (ja) * 2008-11-04 2013-07-17 株式会社東芝 不揮発性半導体記憶装置
CN101923583B (zh) * 2009-06-10 2013-01-16 杭州士兰集成电路有限公司 一种将otp存储器版图改为rom存储器版图的方法
WO2012085627A1 (en) * 2010-12-23 2012-06-28 Universitat Politecnica De Catalunya Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
KR20130032458A (ko) * 2011-09-23 2013-04-02 에스케이하이닉스 주식회사 Ｏｔｐ 메모리 셀을 포함하는 반도체 장치
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
KR20140011790A (ko) 2012-07-19 2014-01-29 삼성전자주식회사 멀티 레벨 안티퓨즈 메모리 장치 및 이의 동작 방법
US8767434B2 (en) * 2012-09-11 2014-07-01 SK Hynix Inc. E-fuse array circuit
US20140198583A1 (en) * 2013-01-17 2014-07-17 Infineon Technologies Ag Method and System for Reducing the Size of Nonvolatile Memories
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
US8942034B2 (en) * 2013-02-05 2015-01-27 Qualcomm Incorporated System and method of programming a memory cell
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
JP2015076556A (ja) * 2013-10-10 2015-04-20 ソニー株式会社 メモリ装置、書込方法、読出方法
TWI543302B (zh) * 2014-03-14 2016-07-21 林崇榮 一次編程記憶體及其相關記憶胞結構
KR102169197B1 (ko) * 2014-09-16 2020-10-22 에스케이하이닉스 주식회사 향상된 프로그램 효율을 갖는 안티퓨즈 오티피 메모리 셀 및 셀 어레이
CN105513642B (zh) * 2014-09-24 2019-11-05 珠海创飞芯科技有限公司 Otp存储器
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9799662B2 (en) * 2015-08-18 2017-10-24 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
TWI578325B (zh) * 2015-08-18 2017-04-11 力旺電子股份有限公司 反熔絲型一次編程的記憶胞及其相關的陣列結構
US10181357B2 (en) 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
US9634015B2 (en) * 2015-08-18 2017-04-25 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
CN105243342B (zh) * 2015-10-08 2019-02-19 浪潮(北京)电子信息产业有限公司 一种基于一次可编程查找表的标准单元逻辑电路
US10109364B2 (en) * 2015-10-21 2018-10-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Non-volatile memory cell having multiple signal pathways to provide access to an antifuse of the memory cell
KR102327140B1 (ko) * 2015-11-30 2021-11-16 삼성전자주식회사 Otp 메모리 소자와 그 제조방법 및 그 메모리 소자를 포함한 전자 장치
US10032522B2 (en) * 2016-06-10 2018-07-24 Synopsys, Inc. Three-transistor OTP memory cell
EP3288037B1 (en) * 2016-08-25 2023-11-08 eMemory Technology Inc. Memory array having a small chip area
US10103732B1 (en) 2017-10-04 2018-10-16 Synopsys, Inc. Low power voltage level shifter circuit
US10163520B1 (en) 2017-10-16 2018-12-25 Synopsys, Inc. OTP cell with improved programmability
CN108511024A (zh) * 2018-04-11 2018-09-07 珠海创飞芯科技有限公司 一种反熔丝编程方法、系统及反熔丝器件
US10847236B2 (en) * 2018-10-17 2020-11-24 Ememory Technology Inc. Memory cell with a sensing control circuit
KR102520496B1 (ko) 2019-01-03 2023-04-11 삼성전자주식회사 오티피 메모리 장치 및 오피 메모리 장치의 테스트 방법
CN113540045A (zh) * 2020-04-15 2021-10-22 合肥晶合集成电路股份有限公司 一种反熔丝电路
CN111881638B (zh) * 2020-07-31 2024-04-26 上海华力微电子有限公司 可编程电路及其编程方法、读取方法
US11763875B2 (en) * 2021-05-26 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Second word line combined with Y-MUX signal in high voltage memory program
CN113707207B (zh) * 2021-10-20 2022-02-15 成都凯路威电子有限公司 Otp存储器阵列和读写方法
TWI867695B (zh) * 2022-08-24 2024-12-21 振生半導體股份有限公司 多狀態的一次性可程式化記憶體電路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669455A (ja) * 1992-08-18 1994-03-11 Mitsubishi Electric Corp 半導体記憶装置
DE19505293A1 (de) * 1995-02-16 1996-08-22 Siemens Ag Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand
EP0996161A1 (en) * 1998-10-20 2000-04-26 STMicroelectronics S.r.l. EEPROM with common control gate and common source for two cells
JP4058219B2 (ja) * 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
US6515344B1 (en) * 1999-10-28 2003-02-04 Advanced Micro Devices, Inc. Thin oxide anti-fuse
JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
US6928001B2 (en) * 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6798693B2 (en) * 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
WO2003025944A1 (en) * 2001-09-18 2003-03-27 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
CN1190849C (zh) * 2001-12-06 2005-02-23 彭泽忠 利用超薄介质击穿现象的半导体存储器单元和存储器阵列
US6747896B2 (en) * 2002-05-06 2004-06-08 Multi Level Memory Technology Bi-directional floating gate nonvolatile memory
EP1434235A1 (en) * 2002-12-24 2004-06-30 STMicroelectronics S.r.l. Semiconductor memory system including selection transistors
CN1229870C (zh) * 2003-02-28 2005-11-30 彭泽忠 采用单个晶体管的高密度半导体存储器单元和存储器阵列
FR2871282B1 (fr) * 2004-06-04 2006-09-15 St Microelectronics Sa Dispositif memoire programmable une seule fois

Also Published As

Publication number Publication date
CN101361139A (zh) 2009-02-04
CN101361139B (zh) 2011-12-14
WO2007019109A2 (en) 2007-02-15
US7206214B2 (en) 2007-04-17
TW200713289A (en) 2007-04-01
TWI435332B (zh) 2014-04-21
JP2009503901A (ja) 2009-01-29
KR101236582B1 (ko) 2013-02-22
US20070030719A1 (en) 2007-02-08
WO2007019109A3 (en) 2007-11-22
KR20080041189A (ko) 2008-05-09

Similar Documents

Publication Publication Date Title
JP5124456B2 (ja) 一回限りプログラム可能なメモリ及びそれを動作させる方法
JP4981661B2 (ja) 分割チャネルアンチヒューズアレイ構造
KR101146405B1 (ko) 고속 ｏｔｐ 검출 스킴
US7508694B2 (en) One-time-programmable memory
CN101800083B (zh) 鳍型场效应晶体管熔丝的操作方法以及集成电路结构
KR102169197B1 (ko) 향상된 프로그램 효율을 갖는 안티퓨즈 오티피 메모리 셀 및 셀 어레이
US6911360B2 (en) Fuse and method for forming
KR102682003B1 (ko) 반도체 메모리 장치
KR102178025B1 (ko) 감소된 레이아웃 면적을 갖는 otp 셀
US20100232203A1 (en) Electrical anti-fuse and related applications
US9899100B2 (en) One time programmable (OTP) cell and an OTP memory array using the same
TWI484494B (zh) 單層多晶矽非揮發式記憶體
KR101958518B1 (ko) 프로그래밍의 신뢰성이 개선된 otp 셀
CN102682849A (zh) 半导体装置及其操作方法
CN102820303A (zh) 非易失性存储器以及其编程与读取方法
US20050167728A1 (en) Single-poly 2-transistor based fuse element
CA2807739A1 (en) Methods for testing unprogrammed otp memory
US20150206595A1 (en) Antifuse array architecture
US8134859B1 (en) Method of sensing a programmable non-volatile memory element
US20250234529A1 (en) One-time programmable bitcell with a thermally enhanced rupture
US20250234531A1 (en) One-time programmable bitcell with a fuse field-effect transistor
US9524788B1 (en) Semiconductor memory device
TW202533243A (zh) 記憶體裝置、積體電路及操作記憶體裝置的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090514

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100902

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120417

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120713

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121002

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121029

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151102

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5124456

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees