KR101236582B1 - Ｏｔｐ 메모리 및 동작 방법 - Google Patents

Ｏｔｐ 메모리 및 동작 방법 Download PDF

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Publication number
KR101236582B1
KR101236582B1 KR1020087003002A KR20087003002A KR101236582B1 KR 101236582 B1 KR101236582 B1 KR 101236582B1 KR 1020087003002 A KR1020087003002 A KR 1020087003002A KR 20087003002 A KR20087003002 A KR 20087003002A KR 101236582 B1 KR101236582 B1 KR 101236582B1
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KR
South Korea
Prior art keywords
transistor
programmable
current
electrode
control electrode
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Expired - Fee Related
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KR1020087003002A
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English (en)
Korean (ko)
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KR20080041189A (ko
Inventor
알렉산더 비. 호플러
고우리샨카르 엘. 친달로레
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프리스케일 세미컨덕터, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020087003002A 2005-08-05 2006-07-28 Ｏｔｐ 메모리 및 동작 방법 Expired - Fee Related KR101236582B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/197,814 US7206214B2 (en) 2005-08-05 2005-08-05 One time programmable memory and method of operation
US11/197,814 2005-08-05
PCT/US2006/029704 WO2007019109A2 (en) 2005-08-05 2006-07-28 One time programmable memory and method of operation

Publications (2)

Publication Number Publication Date
KR20080041189A KR20080041189A (ko) 2008-05-09
KR101236582B1 true KR101236582B1 (ko) 2013-02-22

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KR1020087003002A Expired - Fee Related KR101236582B1 (ko) 2005-08-05 2006-07-28 Ｏｔｐ 메모리 및 동작 방법

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Country Link
US (1) US7206214B2 (cg-RX-API-DMAC7.html)
JP (1) JP5124456B2 (cg-RX-API-DMAC7.html)
KR (1) KR101236582B1 (cg-RX-API-DMAC7.html)
CN (1) CN101361139B (cg-RX-API-DMAC7.html)
TW (1) TWI435332B (cg-RX-API-DMAC7.html)
WO (1) WO2007019109A2 (cg-RX-API-DMAC7.html)

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US7916551B2 (en) 2007-11-06 2011-03-29 Macronix International Co., Ltd. Method of programming cell in memory and memory apparatus utilizing the method
JP5238458B2 (ja) * 2008-11-04 2013-07-17 株式会社東芝 不揮発性半導体記憶装置
CN101923583B (zh) * 2009-06-10 2013-01-16 杭州士兰集成电路有限公司 一种将otp存储器版图改为rom存储器版图的方法
WO2012085627A1 (en) * 2010-12-23 2012-06-28 Universitat Politecnica De Catalunya Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
KR20130032458A (ko) * 2011-09-23 2013-04-02 에스케이하이닉스 주식회사 Ｏｔｐ 메모리 셀을 포함하는 반도체 장치
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
KR20140011790A (ko) 2012-07-19 2014-01-29 삼성전자주식회사 멀티 레벨 안티퓨즈 메모리 장치 및 이의 동작 방법
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US20140198583A1 (en) * 2013-01-17 2014-07-17 Infineon Technologies Ag Method and System for Reducing the Size of Nonvolatile Memories
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
US8942034B2 (en) * 2013-02-05 2015-01-27 Qualcomm Incorporated System and method of programming a memory cell
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
JP2015076556A (ja) * 2013-10-10 2015-04-20 ソニー株式会社 メモリ装置、書込方法、読出方法
TWI543302B (zh) * 2014-03-14 2016-07-21 林崇榮 一次編程記憶體及其相關記憶胞結構
KR102169197B1 (ko) * 2014-09-16 2020-10-22 에스케이하이닉스 주식회사 향상된 프로그램 효율을 갖는 안티퓨즈 오티피 메모리 셀 및 셀 어레이
CN105513642B (zh) * 2014-09-24 2019-11-05 珠海创飞芯科技有限公司 Otp存储器
KR102258112B1 (ko) * 2015-04-01 2021-05-31 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9799662B2 (en) * 2015-08-18 2017-10-24 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
TWI578325B (zh) * 2015-08-18 2017-04-11 力旺電子股份有限公司 反熔絲型一次編程的記憶胞及其相關的陣列結構
US10181357B2 (en) 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
US9634015B2 (en) * 2015-08-18 2017-04-25 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
CN105243342B (zh) * 2015-10-08 2019-02-19 浪潮(北京)电子信息产业有限公司 一种基于一次可编程查找表的标准单元逻辑电路
US10109364B2 (en) * 2015-10-21 2018-10-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Non-volatile memory cell having multiple signal pathways to provide access to an antifuse of the memory cell
KR102327140B1 (ko) * 2015-11-30 2021-11-16 삼성전자주식회사 Otp 메모리 소자와 그 제조방법 및 그 메모리 소자를 포함한 전자 장치
US10032522B2 (en) * 2016-06-10 2018-07-24 Synopsys, Inc. Three-transistor OTP memory cell
EP3288037B1 (en) * 2016-08-25 2023-11-08 eMemory Technology Inc. Memory array having a small chip area
US10103732B1 (en) 2017-10-04 2018-10-16 Synopsys, Inc. Low power voltage level shifter circuit
US10163520B1 (en) 2017-10-16 2018-12-25 Synopsys, Inc. OTP cell with improved programmability
CN108511024A (zh) * 2018-04-11 2018-09-07 珠海创飞芯科技有限公司 一种反熔丝编程方法、系统及反熔丝器件
US10847236B2 (en) * 2018-10-17 2020-11-24 Ememory Technology Inc. Memory cell with a sensing control circuit
KR102520496B1 (ko) 2019-01-03 2023-04-11 삼성전자주식회사 오티피 메모리 장치 및 오피 메모리 장치의 테스트 방법
CN113540045A (zh) * 2020-04-15 2021-10-22 合肥晶合集成电路股份有限公司 一种反熔丝电路
CN111881638B (zh) * 2020-07-31 2024-04-26 上海华力微电子有限公司 可编程电路及其编程方法、读取方法
US11763875B2 (en) * 2021-05-26 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Second word line combined with Y-MUX signal in high voltage memory program
CN113707207B (zh) * 2021-10-20 2022-02-15 成都凯路威电子有限公司 Otp存储器阵列和读写方法
TWI867695B (zh) * 2022-08-24 2024-12-21 振生半導體股份有限公司 多狀態的一次性可程式化記憶體電路

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Also Published As

Publication number Publication date
CN101361139A (zh) 2009-02-04
CN101361139B (zh) 2011-12-14
WO2007019109A2 (en) 2007-02-15
US7206214B2 (en) 2007-04-17
JP5124456B2 (ja) 2013-01-23
TW200713289A (en) 2007-04-01
TWI435332B (zh) 2014-04-21
JP2009503901A (ja) 2009-01-29
US20070030719A1 (en) 2007-02-08
WO2007019109A3 (en) 2007-11-22
KR20080041189A (ko) 2008-05-09

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