FR2871282B1 - Dispositif memoire programmable une seule fois - Google Patents

Dispositif memoire programmable une seule fois

Info

Publication number
FR2871282B1
FR2871282B1 FR0406077A FR0406077A FR2871282B1 FR 2871282 B1 FR2871282 B1 FR 2871282B1 FR 0406077 A FR0406077 A FR 0406077A FR 0406077 A FR0406077 A FR 0406077A FR 2871282 B1 FR2871282 B1 FR 2871282B1
Authority
FR
France
Prior art keywords
memory device
programmable memory
device once
once
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0406077A
Other languages
English (en)
Other versions
FR2871282A1 (fr
Inventor
Jean Pierre Schoellkopf
Richard Fournel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0406077A priority Critical patent/FR2871282B1/fr
Priority to US11/142,661 priority patent/US7521764B2/en
Publication of FR2871282A1 publication Critical patent/FR2871282A1/fr
Application granted granted Critical
Publication of FR2871282B1 publication Critical patent/FR2871282B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR0406077A 2004-06-04 2004-06-04 Dispositif memoire programmable une seule fois Expired - Fee Related FR2871282B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0406077A FR2871282B1 (fr) 2004-06-04 2004-06-04 Dispositif memoire programmable une seule fois
US11/142,661 US7521764B2 (en) 2004-06-04 2005-06-01 One-time programmable memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0406077A FR2871282B1 (fr) 2004-06-04 2004-06-04 Dispositif memoire programmable une seule fois

Publications (2)

Publication Number Publication Date
FR2871282A1 FR2871282A1 (fr) 2005-12-09
FR2871282B1 true FR2871282B1 (fr) 2006-09-15

Family

ID=34945966

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0406077A Expired - Fee Related FR2871282B1 (fr) 2004-06-04 2004-06-04 Dispositif memoire programmable une seule fois

Country Status (2)

Country Link
US (1) US7521764B2 (fr)
FR (1) FR2871282B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7746125B2 (en) * 2004-02-11 2010-06-29 Nxp B.V. High voltage driver circuit with fast slow voltage operation
US7206214B2 (en) * 2005-08-05 2007-04-17 Freescale Semiconductor, Inc. One time programmable memory and method of operation
US7678620B2 (en) * 2006-10-05 2010-03-16 Freescale Semiconductor, Inc. Antifuse one time programmable memory array and method of manufacture
US20110156157A1 (en) * 2009-06-05 2011-06-30 Cambridge Silicon Radio Ltd. One-time programmable charge-trapping non-volatile memory device
US8724363B2 (en) * 2011-07-04 2014-05-13 Ememory Technology Inc. Anti-fuse memory ultilizing a coupling channel and operating method thereof
KR101088954B1 (ko) 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
KR20140011790A (ko) 2012-07-19 2014-01-29 삼성전자주식회사 멀티 레벨 안티퓨즈 메모리 장치 및 이의 동작 방법
US8942034B2 (en) 2013-02-05 2015-01-27 Qualcomm Incorporated System and method of programming a memory cell
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
TWI555177B (zh) * 2014-01-15 2016-10-21 林崇榮 一次編程記憶體及其相關記憶胞結構
US10276253B2 (en) * 2017-08-04 2019-04-30 Micron Technology, Inc. Apparatuses and methods including anti-fuses and for reading and programming of same
TW202410050A (zh) * 2022-08-24 2024-03-01 振生半導體股份有限公司 多狀態的一次性可程式化記憶體電路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5553022A (en) * 1994-12-27 1996-09-03 Motorola Inc. Integrated circuit identification apparatus and method
DE19505293A1 (de) * 1995-02-16 1996-08-22 Siemens Ag Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand
US6522582B1 (en) * 1999-03-05 2003-02-18 Xilinx, Inc. Non-volatile memory array using gate breakdown structures
JP4599059B2 (ja) * 2001-09-18 2010-12-15 キロパス テクノロジー インコーポレイテッド 超薄膜誘電体のブレークダウン現象を利用した半導体メモリセルセル及びメモリアレイ
US7206224B1 (en) * 2004-04-16 2007-04-17 Spansion Llc Methods and systems for high write performance in multi-bit flash memory devices

Also Published As

Publication number Publication date
FR2871282A1 (fr) 2005-12-09
US7521764B2 (en) 2009-04-21
US20060054952A1 (en) 2006-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150227