JP2009537933A5 - - Google Patents
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- Publication number
- JP2009537933A5 JP2009537933A5 JP2009511128A JP2009511128A JP2009537933A5 JP 2009537933 A5 JP2009537933 A5 JP 2009537933A5 JP 2009511128 A JP2009511128 A JP 2009511128A JP 2009511128 A JP2009511128 A JP 2009511128A JP 2009537933 A5 JP2009537933 A5 JP 2009537933A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- transistor
- word line
- cell array
- bit cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 7
- 238000011017 operating method Methods 0.000 claims 3
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/433,998 US7440354B2 (en) | 2006-05-15 | 2006-05-15 | Memory with level shifting word line driver and method thereof |
| US11/433,998 | 2006-05-15 | ||
| PCT/US2007/064583 WO2007133849A2 (en) | 2006-05-15 | 2007-03-22 | Memory with level shifting word line driver and method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009537933A JP2009537933A (ja) | 2009-10-29 |
| JP2009537933A5 true JP2009537933A5 (cg-RX-API-DMAC7.html) | 2010-05-06 |
| JP5081902B2 JP5081902B2 (ja) | 2012-11-28 |
Family
ID=38684957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009511128A Active JP5081902B2 (ja) | 2006-05-15 | 2007-03-22 | レベルシフト・ワード線ドライバを伴うメモリ、およびその動作方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7440354B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5081902B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20090017521A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101443851B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI462117B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2007133849A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100644224B1 (ko) * | 2005-12-06 | 2006-11-10 | 삼성전자주식회사 | 누설전류를 감소시키는 레벨 쉬프트 및 이를 포함하는불휘발성 반도체 메모리 장치의 블락 드라이버 |
| JP2008010082A (ja) * | 2006-06-29 | 2008-01-17 | Nec Electronics Corp | 不揮発性半導体記憶装置及びワード線駆動方法 |
| US7876612B2 (en) * | 2008-10-08 | 2011-01-25 | Nanya Technology Corp. | Method for reducing leakage current of a memory and related device |
| US7940580B2 (en) * | 2008-12-19 | 2011-05-10 | Advanced Micro Devices, Inc. | Voltage shifting word-line driver and method therefor |
| US8358540B2 (en) * | 2010-01-13 | 2013-01-22 | Micron Technology, Inc. | Access line dependent biasing schemes |
| CN102194517B (zh) * | 2010-03-08 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | 具有输入电压转换单元的存储器 |
| US9411391B2 (en) * | 2014-02-07 | 2016-08-09 | Apple Inc. | Multistage low leakage address decoder using multiple power modes |
| KR102155611B1 (ko) * | 2014-02-28 | 2020-09-14 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 |
| KR101910439B1 (ko) * | 2014-03-03 | 2018-12-05 | 인텔 코포레이션 | 고 전압 허용 워드-라인 구동기 |
| US9922702B1 (en) * | 2017-01-03 | 2018-03-20 | Intel Corporation | Apparatus for improving read stability |
| US9881669B1 (en) | 2017-03-01 | 2018-01-30 | Globalfoundries Inc. | Wordline driver with integrated voltage level shift function |
| US10388355B1 (en) | 2017-12-08 | 2019-08-20 | Rambus Inc. | Dual-domain memory |
| CN110277125B (zh) * | 2019-06-28 | 2020-07-28 | 长江存储科技有限责任公司 | 一种存储单元阵列外围电路及存储器件 |
| TWI723944B (zh) | 2020-09-21 | 2021-04-01 | 崛智科技有限公司 | 記憶體裝置 |
| KR20240167246A (ko) * | 2023-05-19 | 2024-11-26 | 에스케이하이닉스 주식회사 | 전압 생성 회로 및 이를 이용하는 반도체 장치 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3082091B2 (ja) * | 1990-07-25 | 2000-08-28 | 株式会社日立製作所 | 半導体集積回路 |
| JP3705842B2 (ja) * | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体装置 |
| JPH0973783A (ja) * | 1995-09-07 | 1997-03-18 | Fujitsu Ltd | 半導体記憶装置 |
| TW318932B (cg-RX-API-DMAC7.html) * | 1995-12-28 | 1997-11-01 | Hitachi Ltd | |
| US6307236B1 (en) * | 1996-04-08 | 2001-10-23 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| JP4017248B2 (ja) * | 1998-04-10 | 2007-12-05 | 株式会社日立製作所 | 半導体装置 |
| US6009023A (en) * | 1998-05-26 | 1999-12-28 | Etron Technology, Inc. | High performance DRAM structure employing multiple thickness gate oxide |
| JP2000036193A (ja) * | 1998-07-17 | 2000-02-02 | Hitachi Ltd | 半導体集積回路装置 |
| KR100283907B1 (ko) * | 1998-12-09 | 2001-03-02 | 김영환 | 서브워드라인 구동회로를 구비한 반도체 메모리 |
| JP3296319B2 (ja) * | 1999-03-02 | 2002-06-24 | 日本電気株式会社 | ワード線駆動回路及び半導体記憶装置 |
| KR100311041B1 (ko) * | 1999-05-07 | 2001-11-02 | 윤종용 | 대기 상태시 누설전류가 발생되지 않는 로우 디코더들 및 칼럼디코더들을 갖는 반도체 메모리장치 |
| JP2001110184A (ja) * | 1999-10-14 | 2001-04-20 | Hitachi Ltd | 半導体装置 |
| JP3838892B2 (ja) * | 2000-08-31 | 2006-10-25 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置およびそのリフレッシュ方法 |
| JP2003092364A (ja) * | 2001-05-21 | 2003-03-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US7064984B2 (en) * | 2002-01-16 | 2006-06-20 | Micron Technology, Inc. | Circuit and method for reducing leakage current in a row driver circuit in a flash memory during a standby mode of operation |
| US7205218B2 (en) * | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
| US20040104756A1 (en) * | 2002-12-03 | 2004-06-03 | Payne James E. | Voltage level shifter circuit having high speed and low switching power |
| TWI221059B (en) * | 2003-10-21 | 2004-09-11 | Novatek Microelectronics Corp | Voltage level shifter |
| US6925025B2 (en) * | 2003-11-05 | 2005-08-02 | Texas Instruments Incorporated | SRAM device and a method of powering-down the same |
| US7242626B2 (en) * | 2005-05-06 | 2007-07-10 | Freescale Semiconductor, Inc. | Method and apparatus for low voltage write in a static random access memory |
-
2006
- 2006-05-15 US US11/433,998 patent/US7440354B2/en active Active
-
2007
- 2007-03-22 WO PCT/US2007/064583 patent/WO2007133849A2/en not_active Ceased
- 2007-03-22 JP JP2009511128A patent/JP5081902B2/ja active Active
- 2007-03-22 KR KR1020087027869A patent/KR20090017521A/ko not_active Withdrawn
- 2007-03-22 CN CN2007800176100A patent/CN101443851B/zh active Active
- 2007-04-02 TW TW096111642A patent/TWI462117B/zh active
-
2008
- 2008-09-12 US US12/209,477 patent/US7706207B2/en active Active