JP2009289935A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009289935A JP2009289935A JP2008140305A JP2008140305A JP2009289935A JP 2009289935 A JP2009289935 A JP 2009289935A JP 2008140305 A JP2008140305 A JP 2008140305A JP 2008140305 A JP2008140305 A JP 2008140305A JP 2009289935 A JP2009289935 A JP 2009289935A
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- Prior art keywords
- substrate
- via hole
- semiconductor device
- finger
- source
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 229910016525 CuMo Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
【解決手段】本発明は、長方形の基板10と、楕円形状または直線部分をその長軸方向に有するトラック形状からなり、その長軸が基板10の長辺方向に沿って配置されてなるビアホール12と、を具備することを特徴とするである。本発明によれば、ビアホールに起因した基板に生じる亀裂を抑制し、かつチップ面積を削減することができる。
【選択図】図4
Description
12 ビアホール
14 金属膜
20 単位FET
22 ソースフィンガー
23 ソースパッド
24 ゲートフィンガー
25 ゲートパッド
26 ドレインフィンガー
27 ドレインパッド
28 ゲートバスバー
30 実装基板
32 接合金属
41 長辺
42 短辺
Claims (9)
- 長方形の基板と、
楕円形状または直線部分をその長軸方向に有するトラック形状からなり、その長軸が前記基板の長辺方向に沿って配置されてなるビアホールと、を具備することを特徴とする半導体装置。 - 前記ビアホールは前記基板の長辺方向に沿って複数設けられていることを特徴とする請求項1記載の半導体装置。
- 前記基板の表面に形成された半導体素子は、ソースフィンガー、ドレインフィンガーおよびゲートフィンガーを有する複数の単位FETを有し、前記複数の単位FETは並列に接続され、
前記ソースフィンガー、ドレインフィンガーおよびゲートフィンガーの少なくとも1つが前記ビアホールに接続され、
前記ソースフィンガー、ドレインフィンガーおよびゲートフィンガーは前記基板の短辺方向に沿って設けられていることを特徴とする請求項1記載の半導体装置。 - 複数の前記ソースフィンガーが一つのソースパッドに設けられ、
前記ソースパッドの下部に前記ビアホールが設けられていることを特徴とする請求項3記載の半導体装置。 - 前記ビアホールの短軸に対する長軸の比は1.1以上であることを特徴とする請求項1記載の半導体装置。
- 前記ビアホールの短軸に対する長軸の比は1.5以上であることを特徴とする請求項5記載の半導体装置。
- 前記基板は、SiC、Si、サファイア、GaN、GaAsおよびInPのいずれかからなることを特徴とする請求項1記載の半導体装置。
- 前記基板をAuSn、Agペーストおよび半田のいずれかからなる接合金属を介し実装する実装面を具備することを特徴とする請求項1記載の半導体装置。
- 前記実装面は、Cu、CuMo、CuW、CuとMoとの積層、およびCuとCuMoとの積層のいずれかの部材からなることを特徴とする請求項8記載の半導体装置。
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Cited By (8)
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JP2011129924A (ja) * | 2009-12-17 | 2011-06-30 | Infineon Technologies Austria Ag | 金属キャリアを有する半導体デバイスおよび製造方法 |
US8586996B2 (en) | 2010-07-26 | 2013-11-19 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JP2016046306A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2016096306A (ja) * | 2014-11-17 | 2016-05-26 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
US9673094B2 (en) | 2014-12-25 | 2017-06-06 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same |
JP2020065158A (ja) * | 2018-10-17 | 2020-04-23 | 太陽誘電株式会社 | 弾性波デバイスおよび複合基板 |
JP2022045568A (ja) * | 2020-09-09 | 2022-03-22 | 株式会社東芝 | 半導体装置 |
EP4160676A1 (en) | 2021-09-29 | 2023-04-05 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device |
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US10069002B2 (en) * | 2016-07-20 | 2018-09-04 | Semiconductor Components Industries, Llc | Bond-over-active circuity gallium nitride devices |
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US8586996B2 (en) | 2010-07-26 | 2013-11-19 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JP2016046306A (ja) * | 2014-08-20 | 2016-04-04 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
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JP2016096306A (ja) * | 2014-11-17 | 2016-05-26 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
US9673094B2 (en) | 2014-12-25 | 2017-06-06 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same |
JP2020065158A (ja) * | 2018-10-17 | 2020-04-23 | 太陽誘電株式会社 | 弾性波デバイスおよび複合基板 |
JP7199195B2 (ja) | 2018-10-17 | 2023-01-05 | 太陽誘電株式会社 | 弾性波デバイスおよび複合基板 |
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EP4160676A1 (en) | 2021-09-29 | 2023-04-05 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device |
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