JP7379301B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7379301B2 JP7379301B2 JP2020151229A JP2020151229A JP7379301B2 JP 7379301 B2 JP7379301 B2 JP 7379301B2 JP 2020151229 A JP2020151229 A JP 2020151229A JP 2020151229 A JP2020151229 A JP 2020151229A JP 7379301 B2 JP7379301 B2 JP 7379301B2
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- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- nitride semiconductor
- layer
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 215
- 150000004767 nitrides Chemical class 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 121
- 239000004020 conductor Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L25/074—Stacked arrangements of non-apertured devices
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本実施形態の半導体装置は、第1面と、第2面と、を有する第1窒化物半導体層と、第1面に設けられた第1ソース電極と、第1面に設けられた第1ドレイン電極と、第1ソース電極と第1ドレイン電極の間の第1面に設けられた第1ゲート電極と、第2面に設けられ、第2面に対向する第3面と、第4面と、を有し、第1窒化物半導体層よりバンドギャップの小さな第2窒化物半導体層と、第4面に設けられ、第4面以下の大きさで第4面に対向する第5面を有し、第2窒化物半導体層よりバンドギャップの小さな第1半導体材料を含む第1半導体デバイスと、を備える。
本実施形態の半導体装置105は、第4面とMOSFET80の間に設けられた第1基板40を備える点で、第1実施形態の半導体装置と異なっている。ここで、第1実施形態と重複する内容の記載は省略する。
本実施形態の半導体装置は、制御回路(第2半導体デバイスの一例)90をさらに備える点で、第1及び第2実施形態の半導体装置と異なっている。ここで、第1及び第2実施形態と重複する内容の記載は省略する。
4 リードフレーム
6 パッド
8 ボンディングワイヤ
10 第1窒化物半導体層
10a 第1面
10b 第2面
12 第2窒化物半導体層
12a 第3面
12b 第4面
14 第1ソース電極
16 第1ドレイン電極
18 第1ゲート電極
20 フィールドプレート電極
22 層間絶縁膜
24 第1ビア
26 第3ビア
30 窒化物半導体装置
32 導電材(第1導電層)
33 第1ゲートパッド
34 接合材(第1導電層)
40 第1基板
42 第2基板
44 第2導電層
45 第3導電層
46 第4導電層
47 配線
48 第2ビア
50 トレンチ
52 絶縁膜
54 フィールドプレート電極
56 第2ドレイン電極
58 ドレイン層
60 ドリフト層
62 ベース領域
64 ソース領域
66 コンタクト領域
68 ゲート絶縁膜
70 第2ゲート電極
72 層間絶縁膜
74 第2ソース電極
80 MOSFET(第1半導体デバイス)
80b 第5面
82 第2ソースパッド
84 第2ケルビンパッド
86 第2ゲートパッド
90 制御回路(第2半導体デバイス)
90b 第6面
100 半導体装置
105 半導体装置
106 半導体装置
Claims (7)
- 第1面と、第2面と、を有する第1窒化物半導体層と、
前記第1面に設けられた第1ソース電極と、
前記第1面に設けられた第1ドレイン電極と、
前記第1ソース電極と前記第1ドレイン電極の間の前記第1面に設けられた第1ゲート電極と、
前記第2面に設けられ、前記第2面に対向する第3面と、第4面と、を有し、前記第1窒化物半導体層よりバンドギャップの小さな第2窒化物半導体層と、
前記第4面に設けられ、前記第4面以下の大ききで前記第4面に対向する第5面を有し、前記第2窒化物半導体層よりバンドギャップの小さな第1半導体材料を含む第1半導体デバイスと、
前記第1窒化物半導体層及び前記第2窒化物半導体層を貫通し、前記第1ソース電極に電気的に接続された第1ビアと、
前記第4面と前記第5面の間に設けられ、前記第1ビアに電気的に接続された第1導電層と、
を備え、
前記第1半導体デバイスは、
前記第1導電層に電気的に接続された第2ドレイン電極と、
前記第2ドレイン電極の上に設けられた第1導電型の第1半導体層と、
前記第1半導体層の上に設けられた、第1導電型の第2半導体層と、
前記第2半導体層の上に設けられた、第2導電型の第1半導体領域と、
前記第1半導体領域の上に設けられた、第1導電型の第2半導体領域と、
前記第2半導体層の上に設けられた第2ゲート電極と、
前記第2半導体領域の上に設けられた第2ソース電極と、
を有する、
半導体装置。 - 前記第4面と前記第1半導体デバイスの間に設けられた、電気導電性を有する第1基板をさらに備える請求項1記載の半導体装置。
- 前記第1ソース電極、前記第1ドレイン電極及び前記第1ゲート電極の下に設けられ、前記第1ドレイン電極と電気的に接続された、電気導電性を有する第2基板と、
をさらに備える請求項1又は請求項2記載の半導体装置。 - 前記第2基板と前記第1ドレイン電極の間に設けられた第2導電層と、
前記第2基板と前記第2導電層の間に設けられ、前記第2基板及び前記第2導電層と電気的に接続され、Au(金)及びSn(スズ)を含む第3導電層と、
前記第1ドレイン電極と前記第2導電層の間に設けられ、前記第1ドレイン電極と前記第2導電層を電気的に接続する第3ビアと、
をさらに備える請求項3記載の半導体装置。 - 前記第4面に設けられ、前記第4面以下の大きさで前記第4面に対向する第6面を有し、前記第2窒化物半導体層よりバンドギャップの小さな第2半導体材料を含む第2半導体デバイスと、
をさらに備える請求項1乃至請求項4いずれか一項記載の半導体装置。 - 前記第2半導体デバイスは、前記第1ゲート電極に所定の制御信号を入力する制御回路を含む、
請求項5記載の半導体装置。 - 前記第5面は、前記第4面より小さな大きさで前記第4面に対向する、
請求項1乃至請求項6いずれか一項記載の半導体装置。
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JP2013239500A (ja) | 2012-05-11 | 2013-11-28 | Fujitsu Semiconductor Ltd | 半導体装置、半導体装置モジュールおよび半導体装置の製造方法 |
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JP2011036017A (ja) | 2009-07-31 | 2011-02-17 | Daikin Industries Ltd | 電力変換装置 |
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JP2013206942A (ja) | 2012-03-27 | 2013-10-07 | Sharp Corp | 半導体装置 |
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WO2017009990A1 (ja) | 2015-07-15 | 2017-01-19 | 株式会社 東芝 | 半導体装置 |
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JP2009289935A (ja) | 2008-05-29 | 2009-12-10 | Sumitomo Electric Device Innovations Inc | 半導体装置 |
JP2016051886A (ja) | 2009-05-28 | 2016-04-11 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | モノリシック集積iii−v族及びiv族複合半導体デバイス及び集積回路 |
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