JP2009260312A - Ｓｏｉ基板の作製方法及び半導体装置の作製方法 - Google Patents

Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP2009260312A
JP2009260312A JP2009069449A JP2009069449A JP2009260312A JP 2009260312 A JP2009260312 A JP 2009260312A JP 2009069449 A JP2009069449 A JP 2009069449A JP 2009069449 A JP2009069449 A JP 2009069449A JP 2009260312 A JP2009260312 A JP 2009260312A
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single crystal
crystal semiconductor
semiconductor substrate
substrate
semiconductor layer
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JP2009260312A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Eriko Nishida
恵里子 西田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2009260312A5 publication Critical patent/JP2009260312A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009069449A 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009260312A (ja)

Priority Applications (1)

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JP2009069449A JP2009260312A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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JP2008079557 2008-03-26
JP2009069449A JP2009260312A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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JP2009260312A5 JP2009260312A5 (enExample) 2012-04-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179641A (ja) * 2008-03-26 2014-09-25 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
WO2016203340A1 (ja) * 2015-06-19 2016-12-22 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置、電子機器、プロジェクター、及びヘッドマウントディスプレイ

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JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
EP2282332B1 (en) * 2009-08-04 2012-06-27 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate
JP5755931B2 (ja) 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
US8962454B2 (en) 2010-11-04 2015-02-24 Tokyo Electron Limited Method of depositing dielectric films using microwave plasma
JP5799740B2 (ja) * 2011-10-17 2015-10-28 信越半導体株式会社 剥離ウェーハの再生加工方法
AU2014311321A1 (en) * 2013-08-29 2016-03-10 The Board Of Trustees Of The Leland Stanford Junior University Method of controlled crack propagation for material cleavage using electromagnetic forces
US10002800B2 (en) * 2016-05-13 2018-06-19 International Business Machines Corporation Prevention of charging damage in full-depletion devices
DE102016112139B3 (de) * 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
EP3993018B1 (en) * 2017-07-14 2024-09-11 Sunedison Semiconductor Limited Method of manufacture of a semiconductor on insulator structure

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WO2007142852A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Producing soi structure using ion shower

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JPH0254532A (ja) * 1988-08-17 1990-02-23 Sony Corp Ｓｏｉ基板の製造方法
JPH10200080A (ja) * 1996-11-15 1998-07-31 Canon Inc 半導体部材の製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179641A (ja) * 2008-03-26 2014-09-25 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
WO2016203340A1 (ja) * 2015-06-19 2016-12-22 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置、電子機器、プロジェクター、及びヘッドマウントディスプレイ
JPWO2016203340A1 (ja) * 2015-06-19 2018-06-28 株式会社半導体エネルギー研究所 表示装置の作製方法、表示装置、電子機器、プロジェクター、及びヘッドマウントディスプレイ
JP2020140213A (ja) * 2015-06-19 2020-09-03 株式会社半導体エネルギー研究所 表示装置

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JP2014179641A (ja) 2014-09-25
EP2105957A3 (en) 2011-01-19
JP5917595B2 (ja) 2016-05-18
EP2105957A2 (en) 2009-09-30
US20090246937A1 (en) 2009-10-01
US8946051B2 (en) 2015-02-03

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